# Power MOSFET, N Channel, 600 V, 3.5 A, 0.85 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1752174/)

**URL**: https://novapart.co/products/STP9NK60Z/power-mosfet-n-channel-600-v-35-a-085-ohm-to-220
**SKU**: STP9NK60Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 125W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.85ohm |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.5A |
| Drain Source On State Resistance | 0.85ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752174/)

**==> picture [61 x 39] intentionally omitted <==**

## **STB9NK60Z, STP9NK60Z, STP9NK60ZFP** 

N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™ Power MOSFET in D²PAK, TO-220 and TO-220FP packages 

**Datasheet** − **production data** 

## **Features** 

|**Order codes**|**VDS**|**RDS(on) max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB9NK60ZT4|600<br>V|0.95Ω|7 A|125 W|
|STP9NK60Z|||||
|STP9NK60ZFP||||30 W|



- Extremely high dv/dt capability 

- Improved ESD capability 

- 100% avalanche tested 

- Gate charge minimized 

**==> picture [174 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>3<br>1 2 3<br>1<br>D PAK2 TO-220<br>3<br>2<br>1<br>TO-220FP<br>**----- End of picture text -----**<br>


- Very low intrinsic capacitances 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

## **Figure 1. Internal schematic diagram** 

, TAB 

**==> picture [112 x 136] intentionally omitted <==**

**==> picture [26 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC15010<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Table 1.**<br>**Device summary**||||
|---|---|---|---|
|**Order codes**|**Marking**|**Package**|**Packaging**|
|STB9NK60ZT4|B9NK60Z|D2PAK|Tube|
|STP9NK60Z|P9NK60Z|TO-220||
|STP9NK60ZFP|P9NK60ZFP|TO-220FP||



January 2013 

1/19 

_www.st.com_ 

Doc ID 8799 Rev 3 

This is information on a product in full production. 

**STB9NK60Z, STP9NK60Z, STP9NK60ZFP** 

|||
|---|---|
|**Contents**|**STB9NK60Z, STP9NK60Z, STP9NK60ZFP**|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D²PAK, TO-220**|**TO-220FP**||
|VDS|Drain-source voltage|600||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25°C|7|7(1)|A|
|ID|Drain current (continuous) at TC=100°C|4.4|4.4(1)|A|
|IDM<br>(2)|Drain current (pulsed)|28|28(1)|A|
|PTOT|Total dissipation at TC= 25°C|125|30|W|
||Derating Factor|1|0.24|W/°C|
|ESD|Gate-source human body model (R=1,5 kΩ,<br>C=100 pF)|4||kV|
|dv/dt(3)|Peak diode recovery voltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink (t = 1 s,TC=<br>25 °C)|--|2500|V|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150||°C|



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area 

3. ISD ≤ 7A, di/dt ≤ 200A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJMAX 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**D²PAK**|**TO-220**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|1||4.2|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max||62.5||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max(1)|30|||°C/W|



1. When mounted on minimum footprint 

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**Electrical ratings** 

## **Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive(1)|7|A|
|EAS|Single pulse avalanche energy(2)|235|mJ|



1. Pulse width limited by Tj Max 

2. Starting Tj=25 °C, ID=IAR, VDD=50 V 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage VGS= 0|ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 600 V,<br>VDS= 600 V, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 3.5 A||0.85|0.95|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15 V, ID= 3.5 A|-|5.3||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f=1 MHz, VGS=0|-|1110<br>135<br>30||pF<br>pF<br>pF|
|Coss eq<br>(2)|Equivalent output<br>capacitance|VGS=0, VDS=0 V to 480 V|-|72||pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=480 V, ID= 7 A<br>VGS=10 V<br>(see_Figure 18_)|-|38<br>7<br>21|53|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=300 V, ID=3.5 A,<br>RG=4.7Ω,VGS=10 V<br>(see_Figure 19_)|-|19<br>17|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD=300 V, ID=3.5 A,<br>RG=4.7Ω,VGS=10 V<br>(see_Figure 19_)|-|43<br>15|-|ns<br>ns|
|**Table 8.**<br>**Gate-source zener diode**|||||||
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ±1 mA, ID=0|30|-|-|V|



The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. 

**Table 9. Source drain diode** 

|**Table 9.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||7|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||28|A|
|VSD<br>(2)|Forward on voltage|ISD=7 A, VGS=0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=7 A,<br>di/dt = 100 A/µs,<br>VDD=30 V, Tj=150 °C|-|480<br>3.5<br>14.5||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration=300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D²PAK and Figure 3. Thermal impedance for D²PAK and TO-220 TO-220** 

**==> picture [159 x 153] intentionally omitted <==**

## **Figure 4. Safe operating area for TO-220FP** 

## **Figure 5. Thermal impedance for TO-220FP** 

**==> picture [159 x 154] intentionally omitted <==**

## **Figure 6. Output characterisics** 

**==> picture [163 x 154] intentionally omitted <==**

**Figure 7. Transfer characteristics** 

**==> picture [155 x 154] intentionally omitted <==**

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**Electrical characteristics** 

## **Figure 8. Transconductance** 

**==> picture [161 x 155] intentionally omitted <==**

## **Figure 10. Gate charge vs gate-source voltage** 

**==> picture [163 x 153] intentionally omitted <==**

**Figure 12. Normalized gate threshold voltage vs temperature** 

**==> picture [169 x 154] intentionally omitted <==**

## **Figure 9. Static drain-source on-resistance** 

**==> picture [165 x 155] intentionally omitted <==**

**Figure 11. Capacitance variations** 

**==> picture [167 x 155] intentionally omitted <==**

**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [171 x 156] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**==> picture [165 x 153] intentionally omitted <==**

**Figure 15. Normalized BVDSS vs temperature** 

**==> picture [173 x 155] intentionally omitted <==**

**Figure 16. Maximum avalanche energy vs temperature** 

**==> picture [167 x 154] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load** 

**==> picture [453 x 151] intentionally omitted <==**

## **Figure 19. Test circuit for inductive load switching and diode recovery times** 

**Figure 20. Unclamped Inductive load test circuit** 

**==> picture [454 x 147] intentionally omitted <==**

**Figure 21. Unclamped inductive waveform** 

**==> picture [185 x 152] intentionally omitted <==**

**Figure 22. Switching time waveform** 

**==> picture [194 x 151] intentionally omitted <==**

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 10. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

## **Figure 23. D²PAK (TO-263) drawing** 

**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


## **Figure 24. D²PAK footprint[(a)]** 

**==> picture [405 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 25. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 12. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

## **Figure 26. TO-220FP drawing** 

**==> picture [405 x 576] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|31-Jan-2013|3|– Minor text changes<br>– The part number STB9NK60Z-1 has been moved to a separate<br>datasheet<br>– Updated:_Section 4: Package mechanical data_.|



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19/19 

Doc ID 8799 Rev 3 



## Links

- [View this product on Novapart](https://novapart.co/products/STP9NK60Z/power-mosfet-n-channel-600-v-35-a-085-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stp9nk60z/mosfet-n-ch-600v-7a-to-220/dp/1752174)
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