# Power MOSFET, N Channel, 500 V, 7.2 A, 0.85 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:8165300/)

**URL**: https://novapart.co/products/STP9NK50Z/power-mosfet-n-channel-500-v-72-a-085-ohm-to-220
**SKU**: STP9NK50Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipati

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.2A |
| Drain Source On State Resistance | 0.85ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8165300/)

## **STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1** 

N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D[2] PAK/I[2] PAK Zener-Protected Su erMESH™MOSFET p 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STP9NK50Z<br>STP9NK50ZFP<br>STB9NK50Z<br>STB9NK50Z-1|500 V<br>500 V<br>500 V<br>500 V|< 0.85Ω<br>< 0.85Ω<br>< 0.85Ω<br>< 0.85Ω|7.2 A<br>7.2 A<br>7.2 A<br>7.2 A|110 W<br>30 W<br>110 W<br>110 W|



- I TYPICAL RDS(on) = 0.72 Ω 

- I EXTREMELY HIGH dv/dt CAPABILITY 

- I 100% AVALANCHE TESTED 

- I GATE CHARGE MINIMIZED 

- I VERY LOW INTRINSIC CAPACITANCES 

- I VERY GOOD MANUFACTURING REPEATIBILITY 

**==> picture [182 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-220FP<br>TO-220<br>3<br>e¢ 1 & 1 [2] [3]<br>D [2] PAK I [2] PAK<br>**----- End of picture text -----**<br>


## **DESCRIPTION** 

The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products. 

## **INTERNAL SCHEMATIC DIAGRAM** 

## **APPLICATIONS** 

- I HIGH CURRENT, HIGH SPEED SWITCHING 

- I IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC 

- I LIGHTING 

## **ORDERING INFORMATION** 

|**SALES TYPE**|**MARKING**|**PACKAGE**|**PACKAGING**|
|---|---|---|---|
|STP9NK50Z|P9NK50Z|TO-220|TUBE|
|STP9NK50ZFP|P9NK50ZFP|TO-220FP|TUBE|
|STB9NK50ZT4|B9NK50Z|D2PAK|TAPE & REEL|
|STB9NK50Z-1|B9NK50Z|I2PAK|TUBE|



June 2004 

1/13 

## **STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**STP9NK50Z**<br>**STB9NK50Z**<br>**STB9NK50Z-1**|**STP9NK50ZFP**||
|VDS|Drain-source Voltage (VGS= 0)|500||V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|500||V|
|VGS|Gate- source Voltage|± 30||V|
|ID|Drain Current (continuous) at TC= 25°C|7.2|7.2 (*)|A|
|ID|Drain Current (continuous) at TC= 100°C|4.5|4.5 (*)|A|
|IDM(�)|Drain Current (pulsed)|28.8|28.8 (*)|A|
|PTOT|Total Dissipation at TC= 25°C|110|30|W|
||Derating Factor|0.88|0.24|W/°C|
|VESD(G-S)|Gate source ESD(HBM-C=100pF, R=1.5KΩ)|3500||V|
|dv/dt (1)|Peak Diode Recovery voltage slope|4.5||V/ns|
|VISO|Insulation Withstand Voltage (DC)|-|2500|V|
|Tj<br>Tstg|Operating Junction Temperature<br>Storage Temperature|-55 to 150<br>-55 to 150||°C<br>°C|



(�) Pulse width limited by safe operating area 

(1) ISD ≤7.2A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 

(*) Limited only by maximum temperature allowed 

## **THERMAL DATA** 

|||**TO-220 / D2PAK /**<br>**I2PAK**|**TO-220FP**||
|---|---|---|---|---|
|Rthj-case|Thermal Resistance Junction-case Max|1.14|4.2|°C/W|
|Rthj-amb<br>Tl|Thermal Resistance Junction-ambient Max<br>Maximum Lead Temperature For Soldering Purpose|62.5<br>300||°C/W<br>°C|



## **AVALANCHE CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Max Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)|7.2|A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|190|mJ|



## **GATE-SOURCE ZENER DIODE** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO|Gate-Source Breakdown<br>Voltage|Igs=± 1mA (Open Drain)|30|||V|



## **PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES** 

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

2/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

**ELECTRICAL CHARACTERISTICS** (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF 

||**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
||V(BR)DSS|Drain-source|ID = 1 mA, VGS= 0|500|||V|
|||Breakdown Voltage||||||
||IDSS|Zero Gate Voltage|VDS= Max Rating|||1|µA|
|||Drain Current (VGS= 0)|VDS= Max Rating, TC= 125 °C|||50|µA|
||IGSS|Gate-body Leakage|VGS= ± 20V|||±10|µA|
|||Current (VDS= 0)||||||
||VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 100µA|3|3.75|4.5|V|
||RDS(on)|Static Drain-source On|VGS= 10V, ID= 3.6 A||0.72|0.85|Ω|
|||Resistance||||||
|DYNAMIC||||||||



|<br>ON/OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID = 1 mA, VGS= 0|500|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20V|||±10|µA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 100µA|3|3.75|4.5|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 3.6 A||0.72|0.85|Ω|
|DYNAMIC|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(1)|Forward Transconductance|VDS= 15 V,ID= 3.6 A||5.3||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||910<br>125<br>30||pF<br>pF<br>pF|
|Coss eq.(3)|Equivalent Output<br>Capacitance|VGS= 0V, VDS= 0V to 400V||75||pF|
|SWITCHING ON|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VDD= 250 V, ID= 3.6 A<br>RG= 4.7ΩVGS= 10 V<br>(Resistive Load see, Figure 3)||17<br>20||ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 400V, ID= 7.2 A,<br>VGS= 10V||32<br>6<br>18||nC<br>nC<br>nC|
|SWITCHING OFF|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(off)<br>tf|Turn-off Delay Time<br>Fall Time|VDD= 250 V, ID= 3.6 A<br>RG= 4.7ΩVGS= 10 V<br>(Resistive Load see, Figure 3)||45<br>22||ns<br>ns|
|tr(Voff)<br>tf<br>tc|Off-voltage Rise Time<br>Fall Time<br>Cross-over Time|VDD= 400V, ID= 7.2 A,<br>RG= 4.7Ω,VGS= 10V<br>(Inductive Load see, Figure 5)||15<br>13<br>30||ns<br>ns<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||7.2<br>28.8|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 7.2 A, VGS= 0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 7.2 A, di/dt = 100A/µs<br>VDD= 40 V, Tj= 150°C<br>(see test circuit, Figure 5)||238<br>1.5<br>12.6||ns<br>µC<br>A|



- Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

2. Pulse width limited by safe operating area. 

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

3/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **Safe Operating Area For TO-220/D2PAK/I2PAK** 

## **Safe Operating Area For TO-220FP** 

**Output Characteristics** 

**==> picture [196 x 196] intentionally omitted <==**

## **Thermal Impedance For TO-220/D2PAK/I2PAK** 

**Thermal Impedance For TO-220FP** 

**Transfer Characteristics** 

**==> picture [203 x 223] intentionally omitted <==**

4/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **Transconductance** 

## **Gate Charge vs Gate-source Voltage** 

**Normalized Gate Threshold Voltage vs Temp.** 

**==> picture [209 x 222] intentionally omitted <==**

## **Static Drain-source On Resistance** 

## **Capacitance Variations** 

**Normalized On Resistance vs Temperature** 

**==> picture [196 x 196] intentionally omitted <==**

5/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **Source-drain Diode Forward Characteristics** 

**==> picture [195 x 196] intentionally omitted <==**

## **Normalized BVDSS vs Temperature** 

**==> picture [196 x 196] intentionally omitted <==**

**Maximum Avalanche Energy vs Temperature** 

**==> picture [196 x 196] intentionally omitted <==**

6/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 3:** Switching Times Test Circuit For Resistive Load 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 2:** Unclamped Inductive Waveform 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 4:** Gate Charge test Circuit 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [220 x 202] intentionally omitted <==**

7/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

|||||||||||||||||**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.051<br>0.107<br>0.050<br>0.027<br>0.034<br>0.067<br>0.067<br>0.203<br>0.106<br>0.409<br>0.645<br>0.551<br>0.116<br>0.620<br>0.260<br>0.154<br>0.151<br>E<br>F<br>G<br>H2<br>G1<br>P011C|**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.051<br>0.107<br>0.050<br>0.027<br>0.034<br>0.067<br>0.067<br>0.203<br>0.106<br>0.409<br>0.645<br>0.551<br>0.116<br>0.620<br>0.260<br>0.154<br>0.151<br>E<br>F<br>G<br>H2<br>G1<br>P011C|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**TO-220 MECHANICAL DATA**|||||||||||||
|||||||||||||||||||
||**DIM.**|||||**mm**||||||||||**inch**||
|||**MIN.**||||**TYP.**|||**MAX.**||||**MIN.**|||**TYP.**|**MAX.**|
||A|4.40|||||||4.60||||0.173||||0.181|
||C|1.23|||||||1.32||||0.048||||0.051|
||D|2.40|||||||2.72||||0.094||||0.107|
||D1|||||1.27||||||||||0.050||
||E|0.49|||||||0.70||||0.019||||0.027|
||F|0.61|||||||0.88||||0.024||||0.034|
||F1|1.14|||||||1.70||||0.044||||0.067|
||F2|1.14|||||||1.70||||0.044||||0.067|
||G|4.95|||||||5.15||||0.194||||0.203|
||G1|2.4|||||||2.7||||0.094||||0.106|
||H2|10.0|||||||10.40||||0.393||||0.409|
||L2|||||16.4||||||||||0.645||
||L4|13.0|||||||14.0||||0.511||||0.551|
||L5|2.65|||||||2.95||||0.104||||0.116|
||L6|15.25|||||||15.75||||0.600||||0.620|
||L7|6.2|||||||6.6||||0.244||||0.260|
||L9|3.5|||||||3.93||||0.137||||0.154|
||DIA.|3.75|||||||3.85||||0.147||||0.151|
|||||||||||||||||||
|||A<br>C||||||||||||||E<br>F<br>G<br>H2<br>G1<br>P011C||
||||C|||||||||||||||
|||||||||||||||||||
||||||L5|D1|||L2|||||||||
|||||||||||||||||||
|||||||||||||||||F<br>G<br>H2<br>G1||
|||||||||||||||||||
|||||||||||||||||G<br>G1||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||F||
||||||||||||L9||L4<br>F2|||||
|||||||||||||||||||
|||||||||||||||||||
|||||||||||||||||||



8/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

**==> picture [463 x 616] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.4 4.6 0.173 0.181<br>B 2.5 2.7 0.098 0.106<br>D 2.5 2.75 0.098 0.108<br>E 0.45 0.7 0.017 0.027<br>F 0.75 1 0.030 0.039<br>F1 1.15 1.5 0.045 0.067<br>F2 1.15 1.5 0.045 0.067<br>G 4.95 5.2 0.195 0.204<br>G1 2.4 2.7 0.094 0.106<br>H 10 10.4 0.393 0.409<br>L2 16 0.630<br>L3 28.6 30.6 1.126 1.204<br>L4 9.8 10.6 .0385 0.417<br>L5 2.9 3.6 0.114 0.141<br>L6 15.9 16.4 0.626 0.645<br>L7 9 9.3 0.354 0.366<br>Ø 3 3.2 0.118 0.126<br>L3<br>L6<br>L7<br>1 2 3<br>L5<br>L2 L4<br>F1<br>F<br>G<br>F2<br>E<br>A<br>D<br>B<br>G1<br>H<br>**----- End of picture text -----**<br>


9/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

||**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|**D2PAK MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.4||4.6|0.173||0.181|
|A1|2.49||2.69|0.098||0.106|
|A2|0.03||0.23|0.001||0.009|
|B|0.7||0.93|0.027||0.036|
|B2|1.14||1.7|0.044||0.067|
|C|0.45||0.6|0.017||0.023|
|C2|1.23||1.36|0.048||0.053|
|D|8.95||9.35|0.352||0.368|
|D1||8|||0.315||
|E|10||10.4|0.393|||
|E1||8.5|||0.334||
|G|4.88||5.28|0.192||0.208|
|L|15||15.85|0.590||0.625|
|L2|1.27||1.4|0.050||0.055|
|L3|1.4||1.75|0.055||0.068|
|M|2.4||3.2|0.094||0.126|
|R||0.4|||0.015||
|V2|0º||8º||||



**==> picture [315 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>**----- End of picture text -----**<br>


10/13 

**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **TO-262 (I[2] PAK) MECHANICAL DATA** 

|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|**TO-262 (I2PAK) MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|A1|2.40||2.72|0.094||0.107|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.49||0.70|0.019||0.027|
|c2|1.23||1.32|0.048||0.052|
|D|8.95||9.35|0.352||0.368|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|E|10||10.40|0.393||0.410|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L2|1.27||1.40|0.050||0.055|
||||||||



**==> picture [404 x 307] intentionally omitted <==**

11/13 

## **STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

## **D[2] PAK FOOTPRINT** 

## **TUBE SHIPMENT (no suffix)*** 

## **TAPE AND REEL SHIPMENT (suffix ”T4”)*** 

**==> picture [462 x 439] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>40 mm min w| le T<br>Aeneas hae mm inch<br>DIM.<br>i ee ae at shot Incation MIN. MAX. MIN. MAX.<br>A 330 12.992<br>B 1.5 0.059<br>! ' on Sy \ “| | C 12.8 13.2 0.504 0.520<br>A | of hh. | 1p D 20.2 0795<br>| = Ee , A } i<br>\ ee af ' G 24.4 26.4 0.960 1.039<br>N 100 3.937<br>\. Ful radius / Teo i a rasmred<br>T 30.4 1.197<br>—_ ‘width<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>1000 1000<br>mm inch<br>DIM. a -——|<br>MIN. MAX. MIN. MAX.<br>ee J<br>. . <;- Wrteine crmiatin<br>A0 10.5 10.7 0.413 0.421<br>B0 15.7 15.9 0.618 0.626<br>ee D 1.5 1.6 0.059 ee 0.063 ae nS ae<br>D1 1.59 1.61 0.062 0.063<br>E 1.65 1.85 0.065 0.073<br>ee ABP ae Be Ba he BS<br>F 11.4 11.6 0.449 0.456<br>K0 4.8 5.0 0.189 0.197<br>ee eee al ae of candty<br>P0 3.9 4.1 0.153 0.161<br>ee P1 11.9 12.1 0.468 0.476 ——— _—-<br>P2 1.9 2.1 0.075 0.082<br>R 50 1.574<br>PFE Fj Ton on) Ciena Sy Rimin<br>EE T 0.25 0.35 0.0098 0.0137 _<br>W 23.7 24.3 0.933 0.956<br>* on sales type<br>© 12/13<br>**----- End of picture text -----**<br>


**STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1** 

**Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.** 

**The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners** 

**© 2004 STMicroelectronics - All Rights Reserved** 

**STMicroelectronics GROUP OF COMPANIES** 

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13/13 



## Links

- [View this product on Novapart](https://novapart.co/products/STP9NK50Z/power-mosfet-n-channel-500-v-72-a-085-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp9nk50z/mosfet-n-to-220/dp/8165300)
---

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