# Power MOSFET, N Channel, 600 V, 5.5 A, 0.72 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807308/)

**URL**: https://novapart.co/products/STP9N60M2/power-mosfet-n-channel-600-v-55-a-072-ohm-to-220ab
**SKU**: STP9N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4130
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.5A |
| Drain Source On State Resistance | 0.72ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807308/)

**STD9N60M2, STP9N60M2,** augmented **STU9N60M2** N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Q g Power MOSFET in DPAK, TO-220 and IPAK packages 

**Datasheet** - **production data** 

## **Features** 

**==> picture [160 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK<br>TAB<br>TAB )<br>3 3<br>2 2<br>1 1<br>TO-220<br>IPAK<br>**----- End of picture text -----**<br>


|**Order codes**|**VDS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STD9N60M2|650 V|0.78Ω|5.5 A|
|STP9N60M2||||
|STU9N60M2||||



- Extremely low gate charge 

- Lower RDS(on) x area vs previous generation 

- Low gate input resistance 

- 100% avalanche tested 

- Zener-protected 

## **Figure 1. Internal schematic diagram** 

**==> picture [18 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
, TAB<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. 

**==> picture [33 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15572v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD9N60M2|9N60M2|DPAK|Tape and reel|
|STP9N60M2||TO-220|Tube|
|STU9N60M2||IPAK|Tube|



May 2013 

DocID024399 Rev 2 

1/21 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STD9N60M2, STP9N60M2, STU9N60M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|5.5|A|
|ID|Drain current (continuous) at TC= 100 °C|3.6|A|
|IDM<br>(1)|Drain current (pulsed)|22|A|
|PTOT|Total dissipation at TC= 25 °C|60|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150||



1. Pulse width limited by safe operating area.. 

2. ISD ≤ 5.5 A, di/dt  ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V 3. VDS ≤  480 V **Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK** Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-pcb Thermal resistance junction-pcb max[(1)] 50 °C/W ~~=e~~ Rthj-amb Thermal resistance junction-ambient max 100 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

**Symbol Parameter Value Unit** Avalanche current, repetetive or not repetetive IAR (pulse width limited by Tjmax ) 2 A EAS Single pulse avalanche energy (starting TID= IAR; VDD=50) j=25°C, 105 mJ ~~To~~ 

DocID024399 Rev 2 

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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V<br>VDS= 600 V, TC=125 °C|||1<br>100|μA<br>μA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±10|μA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 3 A||0.72|0.78|Ω|
|||**Table 6. Dynamic**|||||
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>Ciss<br>Input capacitance<br>-<br>320<br>-<br>pF<br>~~aee~~<br>~~ee~~|||||||
|Coss|Output capacitance|VDS= 100 V, f = 1 MHz,|-|18|-|pF|
|Crss|Reverse transfer<br>capacitance|VGS= 0|-|0.68|-|pF|
|Coss eq.(1)|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0|-|88|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|6.5|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 5.5 A,|-|10|-|nC|
|Qgs|Gate-source charge|VGS= 10 V|-|2|-|nC|
|Qgd|Gate-drain charge|(see_Figure 17_)|-|5.1|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 3 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_and_Figure 21_)|-|8.8|-|ns|
|tr|Rise time||-|7.5|-|ns|
|td(off)|Turn-off delay time||-|22|-|ns|
|tf|Fall time||-|13.5|-|ns|



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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||5.5|A|
|ISDM (1)<br>~~a~~<br>~~a~~|Source-drain current (pulsed)||-||22|A|
|VSD (2)<br>~~a~~<br>~~a~~<br>~~es~~|Forward on voltage<br>~~ee~~|ISD= 5.5 A, VGS= 0<br>~~|~~|-<br>~~|~~<br>~~|~~|~~|~~|1.6<br>~~|~~|V|
|trr<br>~~a~~<br>~~es~~<br>~~es~~|Reverse recovery time<br>~~ee~~|ISD= 5.5 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 18_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~||~~|265<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|ns|
|Qrr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery charge<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~||~~<br>~~||~~|1.65<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~|μC|
|IRRM<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~| |~~<br>~~||~~<br>~~||~~|12.5<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~|A|
|trr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery time|ISD= 5.5 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~||~~<br>~~||~~|377<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|}~~|ns<br>~~|}~~|
|Qrr<br>~~es~~<br>~~es~~<br>~~es~~|Reverse recovery charge||-<br>~~| |~~<br>~~||~~<br>~~|~~<br>~~|~~|2.3<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|}~~|μC<br>~~|}~~|
|IRRM<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~| |~~<br>~~|~~<br>~~|~~|12.2<br>~~|~~<br>~~|~~|~~|}~~|A<br>~~|}~~|



2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and IPAK IPAK** 

**==> picture [199 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15862v1<br>(A)<br>NTNTNOS,<br>10 NX = Nz Nz<br>_— \, N. ) 10µs<br>N\ \, No<br>\ NON 100µs<br>1 ae |<br>NX 1ms<br>| 10ms<br>Tj=150°C<br>0.1 Tc=25°C<br>Single pulse<br>|<br>0.01 |<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for TO-220** 

**Figure 5. Thermal impedance for TO-220** 

**==> picture [206 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15864v1<br>(A)<br>TPT LTTE LOS NT,<br>10 XY — N- “<br>N. I ~ \<br>NTIS 10µs<br>\, NY |<br>1 N\ NG 100µs<br>1ms<br>0.1 Tc=25°C Tj=150°C | | 10ms<br>Single pulse<br>|<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Output characteristics** 

## **Figure 7. Transfer characteristics** 

**==> picture [420 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15865v1 AM15866v1<br>ID ID<br>(A) VGS=7, 8, 9, 10V (A) VDS=17 V<br>10 10<br>6V<br>8 8<br>6 6<br>5V<br>4 4<br>2 2<br>4V<br>0 0<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9.** 

## **Static drain-source on-resistance** 

**==> picture [424 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15869v1 RDS(on) AM15868v1<br>(V) ID=5.5A VDS (Ω)<br>12 VDS VDD=480V 500(V) 0.760 VGS=10A<br>0.750<br>10<br>400<br>0.740<br>8<br>300 0.730<br>6<br>0.720<br>200<br>4 0.710<br>100<br>2 0.700<br>0 0 0.690<br>0 2 4 6 8 10 Qg(nC) 0 1 2 3 4 5 ID(A)<br>**----- End of picture text -----**<br>


## **Figure 10. Capacitance variations** 

## **Figure 11. Output capacitance stored energy** 

**==> picture [426 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15870v1 Eoss AM15874v1<br>(pF) (µJ)<br>1000<br>Ciss<br>2<br>100<br>10 Coss<br>1<br>1 Crss<br>0.1 0<br>0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs vs temperature temperature** 

**==> picture [432 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15871v1 RDS(on) AM15872v1<br>(norm) (norm) ID=3 A<br>2.5 VGS=10 V<br>ID=250µA<br>2.3<br>1.1<br>2.1<br>1.9<br>1.0<br>1.7<br>1.5<br>0.9<br>1.3<br>1.1<br>0.8 0.9<br>0.7<br>0.7 0.5<br>-50 -25 0 25 50 75 100 125 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**==> picture [192 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15873v1<br>(V)<br>1.4<br>| | ft ft<br>1.2<br>pf | | T tt J=-50°C<br>1.0<br>eS<br>0.8 ane<br>TJ=25°C<br>0.6<br>TJ=150°C<br>0.4 a<br>= |<br>0.2<br>pf |<br>0<br>0 | | 1 |tt 2 | 3 tt| 4 5 ISD(A)<br>**----- End of picture text -----**<br>


**Figure 15. Normalized VDS vs temperature** 

**==> picture [196 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS AM15867v1<br>(norm)<br>ID=1mA<br>1.11<br>1.09<br>1.07<br>1.05<br>1.03<br>1.01<br>0.99<br>0.97<br>0.95<br>0.93<br>-50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for resistive load** 

**Figure 17. Gate charge test circuit** 

**==> picture [452 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>JL RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>ton toff<br>tdon tr tdoff tf<br>90% 90%<br>10%<br>0 10% VDS<br>90%<br>VGS<br>0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 9. DPAK (TO-252) mechanical data** 

||**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|**Table 9. DPAK (TO-252) mechanical data(TO-252) mechanical dataTO-252) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|2.20|~~ee ee~~|2.40<br>~~ee~~|
|A1<br>~~a~~|0.90||1.10|
|A2<br>~~a~~|0.03||0.23|
|b<br>~~a~~<br>~~Rs~~|0.64||0.90|
|b4<br>~~Rs~~<br>~~Rs~~|5.20||5.40|
|c<br>~~Rs~~<br>~~Rs~~|0.45||0.60|
|c2<br>~~Rs~~<br>~~a~~|0.48||0.60|
|D<br>~~a~~|6.00||6.20|
|D1<br>~~a~~||5.10||
|E<br>~~a~~<br>~~Rs~~|6.40||6.60|
|E1<br>~~Rs~~<br>~~Rs~~||4.70||
|e<br>~~Rs~~<br>~~Rs~~||2.28||
|e1<br>~~Rs~~<br>~~a~~|4.40||4.60|
|H<br>~~a~~|9.35||10.10|
|L<br>~~a~~|1.00||1.50|
|(L1)<br>~~a~~||2.80||
|L2<br>~~a~~<br>~~Rs~~||0.80||
|L4<br>~~Rs~~|0.60||1.00|
|R<br>~~Rs~~<br>~~a~~||0.20||
|V2<br>~~a~~|0°||8°|



DocID024399 Rev 2 

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**Package mechanical data** 

## **Figure 22. DPAK (TO-252) drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_K<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**==> picture [135 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. DPAK footprint  [(a)]<br>**----- End of picture text -----**<br>


**==> picture [34 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint_REV_K<br>**----- End of picture text -----**<br>


- a. All dimensions are in millimeters 

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**Package mechanical data** 

## **Table 10.** 

**==> picture [148 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220 type A mechanical data<br>**----- End of picture text -----**<br>


**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

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**Package mechanical data** 

## **Figure 24. TO-220 type A drawing** 

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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Package mechanical data** 

**Table 11. IPAK (TO-251) mechanical data** 

||**Table 11. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 11. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 11. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**DIM**|**mm.**|||
||**min.**<br>~~a~~|**typ.**<br>~~a~~|**max.**|
|A<br>~~|~~<br>~~|~~|2.20<br>~~|~~|~~ee~~|2.40<br>~~ee~~|
|A1<br>~~|~~<br>~~|~~|0.90<br>~~|~~|~~ee~~|1.10<br>~~ee~~|
|b<br>~~|~~<br>~~|~~|0.64<br>~~|~~|~~ee~~|0.90<br>~~ee~~|
|b2<br>~~|~~<br>~~|~~|~~|~~|~~|~~<br>~~TT~~|0.95<br>~~|~~|
|b4<br>~~|~~<br>~~|~~|5.20<br>~~|~~|~~|~~<br>~~TT~~|5.40<br>~~|~~|
|B5<br>~~|~~<br>~~|~~|~~|~~|0.30<br>~~|~~<br>~~TT~~|~~|~~|
|c<br>~~|~~<br>~~a~~<br>~~|~~|0.45<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|c2<br>~~|~~<br>~~a~~<br>~~|~~|0.48<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|D<br>~~|~~<br>~~a~~<br>~~|~~|6.00<br>~~|~~|~~ee~~|6.20<br>~~ee~~|
|E<br>~~ee~~|6.40|~~|~~|6.60<br>~~|~~|
|e<br>~~ee~~||2.28<br>~~|~~<br>~~TT~~|~~|~~|
|e1<br>~~ee~~|4.40|~~|~~|4.60<br>~~|~~|
|H<br>~~a~~<br>~~ee~~|~~ee~~|16.10<br>~~|~~|~~|~~|
|L<br>~~ee~~|9.00<br>~~ee~~|~~|~~<br>~~|~~|9.40<br>~~|~~<br>~~|~~|
|L1<br>~~ee~~<br>~~|~~<br>~~|~~|0.80<br>~~ee~~<br>~~|~~<br>|~~|~~<br>~~|~~<br>~~|~~<br>|1.20<br>~~|~~<br>~~|~~<br>|
|L2<br>~~|~~<br>~~|~~|~~|~~<br>|0.80<br>~~|~~<br>~~|~~<br>|1.00<br>~~|~~<br>|
|V1<br>~~|~~<br>~~|pf~~|~~|~~<br>~~pf~~|10°<br>~~|~~<br>~~|~~<br>~~pf~~|~~|~~<br>~~pf~~|



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DocID024399 Rev 2 

**STD9N60M2, STP9N60M2, STU9N60M2** 

**Package mechanical data** 

## **Figure 25. IPAK (TO-251) drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_K<br>**----- End of picture text -----**<br>


DocID024399 Rev 2 

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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 12. DPAK (TO-252) tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>ee|**Reel**<br>~~ee~~<br>ee|**Reel**<br>~~ee~~<br>ee|
|---|---|---|---|---|---|
|**Dim.**<br>~~ee~~|**mm**<br>~~ee~~<br>~~ee~~||**Dim.**<br>~~ee~~<br> ee|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee ~~<br>~~ee~~||**Min.**|**Max.**|
|A0<br>~~a~~<br>~~OR~~|6.8|7|A||330|
|B0<br>~~OR~~|10.4|10.6|B|1.5||
|B1<br>~~ORa~~||12.1|C|12.8|13.2|
|D<br>~~a~~<br>~~OR~~|1.5|1.6|D|20.2||
|D1<br>~~OR~~<br>~~OR~~|1.5||G|16.4|18.4|
|E<br>~~OR~~<br>~~OR~~|1.65|1.85|N|50||
|F<br>~~OR~~<br>~~a~~<br>~~OR~~|7.4|7.6|T||22.4|
|K0<br>~~OR~~|2.55|2.75||||
|P0<br>~~ORa~~|3.9|4.1|Base qty.||2500|
|P1<br>~~a~~<br>~~a~~|7.9<br>|8.1<br><br>~~ee~~|Bulk qty.||2500|
|P2<br>~~ee~~<br>~~a~~<br>~~a~~|1.9<br>~~ee~~<br>~~ee~~<br>|2.1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||||
|R<br>~~a~~<br>~~a~~|40<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br>||||
|T<br>~~a~~|0.25<br>~~ee~~<br>|0.35<br>~~ee~~<br><br>~~ee~~||||
|W<br>~~ee~~|15.7<br>~~ee~~|16.3<br>~~ee~~<br>~~ee~~||||



18/21 

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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Packaging mechanical data** 

## **Figure 26. Tape** 

**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>a e _ ;<br>| / 000 00 000 6 00 E<br>F<br>K0 W<br>B1 B0<br>OF ||] ||| @ |] @<br>‘ Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ><br>User direction of feed<br>R<br>‘e ee cn a ea ca l la :<br>meteteaate<br>DD DD DD<br>——————- Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 27. Reel** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A - At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**STD9N60M2, STP9N60M2, STU9N60M2** 

**Revision history** 

## **6 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Mar-2013|1|First release.|
|30-May-2013|2|– The part number STF9N60M2 has been moved to a separate<br>datasheet.<br>– Modified: IARand IASvalues, the entire typical values in_Table 4_,_6_,<br>_7_and_8_<br>– Updated:_Section 4: Package mechanical data_only for TO-220<br>package|



20/21 

DocID024399 Rev 2 

**STD9N60M2, STP9N60M2, STU9N60M2** 

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DocID024399 Rev 2 

21/21 



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