# Power MOSFET, N Channel, 800 V, 6 A, 0.8 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807307/)

**URL**: https://novapart.co/products/STP8N80K5/power-mosfet-n-channel-800-v-6-a-08-ohm-to-220ab
**SKU**: STP8N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9740
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | SuperMESH 5 |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 0.8ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807307/)

## **STP8N80K5, STU8N80K5** 

N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFET in TO-220 and IPAK packages 

− **Datasheet production data** 

**Features** 

**==> picture [168 x 73] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>3<br>2<br>3 1<br>2<br>1 IPAK<br>TO-220<br>**----- End of picture text -----**<br>


**Order codes VDS RDS(on)max. ID PTOT** STP8N80K5 800 V 0.95 Ω 6 A 110 W STU8N80K5 ~~ee~~ • Worldwide best FOM (figure of merit) 

- Ultra low gate charge 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

**==> picture [173 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2,TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. 

**Table 1. Device summary** 

|**Order codes**<br>~~—~~|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP8N80K5<br>~~—~~|8N80K5|TO-220|Tube|
|STU8N80K5<br>~~—~~||IPAK||



March 2013 

DocID023544 Rev 4 

1/16 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STP8N80K5, STU8N80K5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



2/16 

DocID023544 Rev 4 

**STP8N80K5, STU8N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 30|V|
|ID|Drain current TC= 25 °C|6|A|
|ID|Drain current TC= 100 °C|4|A|
|IDM<br>(1)|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|IAR<br>(2)|Max current during repetitive or single<br>pulse avalanche|2|A|
|EAS<br>(3)|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|114|mJ|
|dv/dt(4)|Peak diode recovery voltage slope|4.5|V/ns|
|dv/dt(5)|MOSFET dv/dt ruggedness|50|V/ns|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|- 55 to 150|°C|



1. Pulse width limited by safe operating area. 

2. Pulse width limited by TJmax. 

3. Starting TJ = 25 °C, ID=IAS, VDD= 50 V 

4. ISD ≤  6 A, di/dt   ≤  100 A/μs, VDS(peak) ≤ V(BR)DSS 5. VDS ≤ 640 V 

**Table 3. Thermal data Value Symbol Parameter Unit TO-220 IPAK** Rthj-case Thermal resistance junction-case max. 1.14 °C/W ~~————~~ Rthj-amb Thermal resistance junction-amb max. 62.5 100 °C/W 

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**STP8N80K5, STU8N80K5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>ee|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-source breakdown<br>voltage<br>~~es~~|ID= 1 mA, VGS= 0<br>~~ee~~|800<br>ee|~~ee~~|~~ee~~|V<br>~~ee~~|
|IDSS<br>~~ee~~|Zero gate voltage drain<br>current (VGS= 0)<br>~~es~~<br>~~ee~~|VDS= 800 V,<br>~~ee~~|~~ee~~|~~ee~~|1<br>~~ee~~|μA<br>~~ee~~|
|||VDS= 800 V, Tc=125 °C<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|μA<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~i~~<br>~~a~~|Gate body leakage current<br>(VDS= 0)<br>~~i~~|VGS= ± 20 V<br>~~ee~~<br>~~a~~|~~ee~~|~~ee~~|±10<br>~~ee~~|μA<br>~~ee~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate threshold voltage<br>~~a~~<br>~~es~~|VDS= VGS, ID= 100 μA<br>~~a~~<br>~~a~~|3<br>~~a~~|4<br>~~a~~|5<br>~~a~~|V<br>~~a~~|
|RDS(on)<br>~~a~~|Static drain-source on-<br>resistance<br>~~es~~|VGS= 10 V, ID= 3 A<br>~~a~~||0.8|0.95|Ω|



**Table 5. Dynamic** 

|**Symbol**<br>~~a~~<br>~~——~~|**Parameter**<br>~~ee~~<br>~~——~~|**Test conditions**<br>~~ee eee~~<br>~~_oxARRR:~~|**Min.**<br>~~eee~~<br>~~_oxARRR:~~|**Typ.**<br>~~eee~~<br>~~_oxARRR:~~|**Max.**<br>~~eee~~<br>~~_oxARRR:~~|**Unit**<br>~~eee~~<br>~~_oxARRR:~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a~~<br>~~|~~<br>~~——~~|Input capacitance<br>~~ee ~~<br>~~|~~<br>~~——~~|VDS=100 V, f=1 MHz, VGS=0<br> ~~ee eee~~<br>~~|~~<br>~~=~~<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|450<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|
|Coss<br>~~>~~<br>~~——~~|Output capacitance<br>~~>~~<br>~~——~~||-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|50<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|
|Crss<br>~~——~~|Reverse transfer<br>capacitance<br>~~——~~||-<br>~~_oxARRR:~~|1<br>~~_oxARRR:~~|-<br>~~_oxARRR:~~|pF<br>~~_oxARRR:~~|
|Co(tr)<br>(1)<br>~~——~~<br>~~of~~|Equivalent capacitance time<br>related<br>~~——~~<br>~~ee~~<br>~~of~~|VGS= 0, VDS= 0 to 640 V<br>~~_oxARRR:~~<br>~~ee~~<br>~~an~~|-<br>~~_oxARRR:~~<br>~~ee~~|57<br>~~_oxARRR:~~<br>~~ee~~|-<br>~~_oxARRR:~~<br>~~ee~~|pF<br>~~_oxARRR:~~<br>~~ee~~|
|Co(er)<br>(2)<br>~~of~~|Equivalent capacitance<br>energy related<br>~~ee~~<br>~~of~~||-<br>~~ee~~<br>~~an~~|24<br>~~ee~~<br>~~an~~|-<br>~~ee~~<br>~~an~~|pF<br>~~ee~~<br>~~an~~|
|RG<br>~~a~~|Intrinsic gate resistance<br>~~a~~|f = 1 MHz open drain<br>~~a~~|-<br>~~a~~|6<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~|
|Qg<br>~~——~~<br>~~———~~|Total gate charge<br>~~——~~<br>~~———~~|VDD= 640 V, ID= 6 A<br>VGS=10 V<br>_(seeFigure 18)_<br>~~=~~<br>~~=~~|-<br>~~=~~|16.5<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgs<br>~~———~~|Gate-source charge<br>~~———~~||-<br>~~=~~|3.2<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgd<br>~~———~~<br>~~TT~~|Gate-drain charge<br>~~———~~<br>~~TT~~||-<br>~~=~~<br>~~=~~|11<br>~~=~~<br>~~=~~|-<br>~~=~~<br>~~=~~|nC<br>~~=~~<br>~~=~~|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**STP8N80K5, STU8N80K5** 

**Electrical characteristics** 

**Table 6. Switching times** 

||**Table 6. Switching times**|**Table 6. Switching timesg times times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 400 V, ID= 3 A,<br>RG=4.7Ω, VGS=10 V<br>_(seeFigure 20)_|-|12|-|ns|
|tr|Rise time||-|14|-|ns|
|td(off)|Turn-off delay time||-|32|-|ns|
|tf|Fall time||-|20|-|ns|



**Table 7. Source drain diode** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current<br>~~a~~|~~a~~|-<br>~~a~~|~~a~~|6<br>~~a~~|A<br>~~a~~|
|ISDM|Source-drain current (pulsed)||||24|A|
|VSD<br>(1)|Forward on voltage|ISD= 6 A, VGS=0|-||1.5|V|
|trr|Reverse recovery time|ISD= 6 A, VDD= 60 V<br>di/dt = 100 A/μs,<br>_(seeFigure 19)_|-|300||ns|
|Qrr|Reverse recovery charge||-|3||μC|
|IRRM|Reverse recovery current||-|20||A|
|trr<br>~~——~~|Reverse recovery time<br>~~——~~|ISD= 6 A,VDD= 60 V<br>di/dt=100 A/μs,<br>Tj=150 °C<br>_(seeFigure 19)_<br>~~Fe~~|-<br>~~Fe~~|415<br>~~Fe~~|~~Fe~~|ns<br>~~Fe~~|
|Qrr<br>~~——~~|Reverse recovery charge<br>~~——~~||-<br>~~Fe~~|3.8<br>~~Fe~~|~~Fe~~|μC<br>~~Fe~~|
|IRRM<br>~~——~~|Reverse recovery current<br>~~——~~||-<br>~~Fe~~|18<br>~~Fe~~|~~Fe~~|A<br>~~Fe~~|



The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. 

DocID023544 Rev 4 

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**STP8N80K5, STU8N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220** 

## **Figure 3. Thermal impedance for TO-220** 

**==> picture [206 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15632v1<br>(A)<br>10<br>10µs<br>100µs<br>1 1ms<br>10ms<br>Tj=150°C<br>0.1<br>Tc=25°C<br>Single pulse<br>ee<br>0.01 a a |<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for IPAK** 

## **Figure 5. Thermal impedance for IPAK** 

**==> picture [206 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15630v1<br>(A)<br>10 10µs<br>Ron limit 100µs<br>1<br>1ms<br>10ms<br>0.1 Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01 a a |<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6.  Output characteristics** 

## **Figure 7. Transfer characteristics** 

**==> picture [428 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15633v1 AM15634v1<br>ID (A) ID (A)<br>VGS=10, 11V<br>12 r K++) | LS 12 [| | | | VDS | =20V | | | vem<br>9V<br>P|| || [i|| UATZa |SeSSeeee| | fl fi e558| | | |<br>10 eee,eee 4a Za 10 rt(| ttt| | tttTtAYetTTfy<br>68 iee,ey  AeAe 8V 86 |ee| | | | ee| 7, Et tf<br>Ft eS =e | | | | | J7E TL ET tf<br>4 mw AeYet ft i ft | ft 4 rt|| ttt| | [AYiTTTtt te<br>7V<br>pf tL<br>2<br>450 2 (| | | Yi tt tt tt<br>IAT 6V 27 eee<br>0 AR eeeTEeee 0 (| 4 [Yi | tt e e tf e<br>0 4 8 12 16 VDS(V) 5 6 7 8 9 10 VGS(V)<br>**----- End of picture text -----**<br>


6/16 DocID023544 Rev 4 ~~aeee—a—ai‘ii~~ 

**STP8N80K5, STU8N80K5** 

**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**Figure 9. Static drain-source on-resistance** 

**==> picture [427 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15635v1VDS RDS(on) AM15636v1<br>(V) VDS VDD=640V (V) (Ω)<br>TT ID=6A Pty V GS =10V BEA<br>12 600<br>1.6<br>10 500<br>BRUREEEEY SE CPA<br>1.2<br>68 TONTATIA | 400300 COCASERRE Ae<br>0.8<br>/ pe\i POAT<br>4 200<br>PEIN TET TT PT TeV4 ET TT<br>0.4<br>2 ATTN 100 EV4nREEeeeee<br>\ PTTL<br>0 AGRKSEREe 0 0 PCETET ET Ey<br>0 4 8 12 16 Qg(nC) 1 2 3 4 5 6 ID(A)<br>Figure 10.  Capacitance variations Figure 11. Output capacitance stored energy<br>C AM15637v1 Eoss (µJ) AM15638v1<br>(pF)<br>1000 6<br>Ciss<br>100 4<br>Coss<br>10 2<br>Crss<br>1 0<br>SAA a Vi [ttt] | |<br>0.1 1 10 100 VDS(V) 0 200 400 600 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized gate threshold voltage vs. temperature** 

**Figure 13. Normalized on-resistance vs. temperature** 

**==> picture [433 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15639v1 RDS(on) AM15640v1<br>(norm) ID=100µA (norm) VGS=10V<br>~ VDS=VGS 2.4 P| ID=3 A a,<br>1<br>PON | | | TT A<br>2<br>|<br>pt INS tt SPEEA<br>0.8 . 1.6<br>N 1.2 a<br>0.6<br>0.8<br>0.4 0.4<br>PET TT ET P TOoP e r<br>-50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


DocID023544 Rev 4 

7/16 

**STP8N80K5, STU8N80K5** 

**Electrical characteristics** 

**Figure 14. Drain-source diode forward characteristics** 

**Figure 15. Normalized VDS vs. temperature** 

**==> picture [421 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15641v1 VDS AM15642v1<br>(V) TJ=-50°C (norm)<br>0.9 pa 1.1 TT. ID = 1mA<br>trept | | ee TJ=25°C | | 1.06  EF EE<br>0.8<br>Laneret LL | 1.02 FPaTIA<br>0.7<br>CCC FATE<br>0.98<br>TJ=150°C<br>0.6 Propet] | Ee<br>eT Lt | 0.94 A<br>PFT | Tt yy ry<br>0.5 Fi | tt ttt ft 0.9 AeTT<br>1 2 3 4 5 ISD(A) -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Maximum avalanche energy vs. starting TJ** 

**==> picture [203 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15643v1<br>EAS (mJ)<br>VDD=50V<br>es TJ<br>ID=2A<br>100 FRCoo<br>AIEEE<br>80 FL<br>es<br>60 a<br>a<br>40 ee<br>es<br>20 a<br>ee<br>0 FSIS SE<br>0 40 80 120 TJ(°C)<br>**----- End of picture text -----**<br>


8/16 

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**STP8N80K5, STU8N80K5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for resistive load** 

**Figure 18. Gate charge test circuit** 

**==> picture [444 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 315] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID023544 Rev 4 

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**STP8N80K5, STU8N80K5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/16 

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**STP8N80K5, STU8N80K5** 

**Package mechanical data** 

**Table 9. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

DocID023544 Rev 4 

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**STP8N80K5, STU8N80K5** 

**Package mechanical data** 

## **Figure 23. TO-220 type A drawing** 

**==> picture [64 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**STP8N80K5, STU8N80K5** 

**Package mechanical data** 

**Table 10. IPAK (TO-251) mechanical data** 

||**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**DIM**|**mm.**|||
||**min.**<br>~~a~~|**typ.**<br>~~a~~|**max.**|
|A<br>~~|~~<br>~~|~~|2.20<br>~~|~~|~~ee~~|2.40<br>~~ee~~|
|A1<br>~~|~~<br>~~|~~|0.90<br>~~|~~|~~ee~~|1.10<br>~~ee~~|
|b<br>~~|~~<br>~~|~~|0.64<br>~~|~~|~~ee~~|0.90<br>~~ee~~|
|b2<br>~~|~~<br>~~|~~|~~|~~|~~|~~<br>~~TT~~|0.95<br>~~|~~|
|b4<br>~~|~~<br>~~|~~|5.20<br>~~|~~|~~|~~<br>~~TT~~|5.40<br>~~|~~|
|B5<br>~~|~~<br>~~|~~|~~|~~|0.30<br>~~|~~<br>~~TT~~|~~|~~|
|c<br>~~|~~<br>~~a~~<br>~~|~~|0.45<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|c2<br>~~|~~<br>~~a~~<br>~~|~~|0.48<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|D<br>~~|~~<br>~~a~~<br>~~|~~|6.00<br>~~|~~|~~ee~~|6.20<br>~~ee~~|
|E<br>~~ee~~|6.40|~~|~~|6.60<br>~~|~~|
|e<br>~~ee~~||2.28<br>~~|~~<br>~~TT~~|~~|~~|
|e1<br>~~ee~~|4.40|~~|~~|4.60<br>~~|~~|
|H<br>~~a~~<br>~~ee~~|~~ee~~|16.10<br>~~|~~|~~|~~|
|L<br>~~ee~~|9.00<br>~~ee~~|~~|~~<br>~~|~~|9.40<br>~~|~~<br>~~|~~|
|L1<br>~~ee~~<br>~~|~~<br>~~|~~|0.80<br>~~ee~~<br>~~|~~<br>|~~|~~<br>~~|~~<br>~~|~~<br>|1.20<br>~~|~~<br>~~|~~<br>|
|L2<br>~~|~~<br>~~|~~|~~|~~<br>|0.80<br>~~|~~<br>~~|~~<br>|1.00<br>~~|~~<br>|
|V1<br>~~|~~<br>~~|pf~~|~~|~~<br>~~pf~~|10°<br>~~|~~<br>~~|~~<br>~~pf~~|~~|~~<br>~~pf~~|



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**Package mechanical data** 

## **Figure 24. IPAK (TO-251) drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_K<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|06-Aug-2012|1|First release.|
|16-Oct-2012|2|– Minor text changes in cover page<br>– Updatd: PTOTvalue for DPAK, TO-220 and IPAK in_Table 2_,<br>Rthj-casevalue for DPAK in_Table 3_, VSDvalue in_Table 7_<br>– Deleted TIin_Table 3_<br>– Updated_Section 4: Package mechanical data_for DPAK and<br>IPAK|
|21-Mar-2013|3|– Minor text changes<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Modified:_Figure 1_, IAR, IAS,note _4_on_Table 2_, RDS(on)typical<br>value on_Table 4_, typical values on_Table 5_,_6_and_7_<br>– Updated:_Section 4: Package mechanical data_<br>– The part numbers STF8N80K5, STFI8N80K5 and<br>STD8N80K5 have been moved to the separate datasheets|
|27-Mar-2013|4|Added: MOSFET dv/dt ruggedness on_Table 2_|



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## Links

- [View this product on Novapart](https://novapart.co/products/STP8N80K5/power-mosfet-n-channel-800-v-6-a-08-ohm-to-220ab)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp8n80k5/mosfet-n-ch-800v-6a-to-220ab/dp/2807307)
---

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