# Power MOSFET, N Channel, 55 V, 80 A, 0.006 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807223/)

**URL**: https://novapart.co/products/STP85NF55L/power-mosfet-n-channel-55-v-80-a-0006-ohm-to-220ab
**SKU**: STP85NF55L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7720
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 300W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.006ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.006ohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807223/)

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## **STB85NF55L STP85NF55L** N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D[2] PAK STripFET™ II Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB85NF55L|55 V|< 0.008Ω|80 A|
|STP85NF55L|55 V|< 0.008Ω|80 A|



■ Low threshold drive 

## **Application** 

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3 3<br>1 2 1<br>TO-220 D²PAK<br>**----- End of picture text -----**<br>


■ Switching applications 

## **Description** 

This Power MOSFET is the latest development of STMicroelectronis unique "single feature size" strip-based process. The resulting 

transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB85NF55LT4|B85NF55L|D²PAK|Tape and reel|
|STP85NF55L|P85NF55L|TO-220|Tube|



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_www.st.com_ 

|**Contents**|**STB85NF55L, STP85NF55L**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|55|V|
|VGS|Gate-source voltage|± 15|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|80|A|
|ID<br>(1)|Drain current (continuous) at TC=100 °C|80|A|
|IDM<br>(2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
||Derating factor|2.0|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|10|V/ns|
|EAS<br>(4)|Single pulse avalanche energy|980|mJ|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 175|°C|



1. Current limited by package 

2. Pulse width limited by safe operating area 

3. ISD ≤  80 A, di/dt  ≤  300 A/µs, VDD ≤  V(BR)DSS, Tj ≤  TJMAX 

4. Starting TJ = 25 °C, ID = 40 A, VDD = 40 V 

**Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**D2PAK**|**TO-220**||
|Rthj-case|Thermal resistance junction-case max.|0.5||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max.|62.5||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max.(1)|35||°C/W|
|Tl|Maximum lead temperature for soldering purpose|300||°C|



1. When mounted on 1inch² FR-4 2Oz Cu board 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE= 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250µA, VGS= 0|55|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= max rating,<br>VDS= max rating @125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±15 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|1.6|2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 40 A||0.0060|0.008|Ω|
|||VGS= 5 V, ID= 40 A||0.008|0.01||



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS= 15 V, ID= 40 A|-|130||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f = 1 MHz,<br>VGS= 0|-|4050<br>860<br>300||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 27.5 V, ID= 80 A<br>VGS= 5 V|-|80<br>20<br>45|110|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 27.5 V, ID= 40 A,<br>RG=4.7Ω,  VGS= 5 V<br>_Figure 14 on page 8_|-|35<br>165<br>70<br>55|-|ns<br>ns<br>ns<br>ns|



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**Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD|Source-drain current||-||80|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||320|A|
|VSD<br>(2)|Forward on voltage|ISD= 80 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 80 A,<br>di/dt = 100 A/µs,<br>VDD= 20 V, TJ= 150 °C<br>_Figure 16 on page 8_|-|80<br>240<br>6||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

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## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

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**Figure 6. Transconductance** 

**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage vs temperature** 

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**Figure 11. Normalized on resistance vs temperature** 

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**Figure 12. Source-drain diode forward characteristics** 

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**Figure 13. Normalized BVDSS vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

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Figure 14. Switching times test circuit for  Figure 15. Gate charge test circuit<br>resistive load<br>**----- End of picture text -----**<br>


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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 16. Test circuit for inductive load  Figure 17. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 18. Unclamped inductive waveform** 

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V(BR)DSS<br>VD<br>IDM<br>ID<br>VDD VDD<br>AM01472v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-220 mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.48||0.70|0.019||0.027|
|D|15.25||15.75|0.6||0.62|
|D1||1.27|||0.050||
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.051|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|∅P|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|



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**Package mechanical data** 

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D2PAK (TO-263) mechanical data<br>**----- End of picture text -----**<br>


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mm inc h<br>Dim<br>Min Typ Max Min Typ Max<br>A 4.40 4.60 0.173 0.181<br>A1 0.03 0.23 0.001 0.009<br>b 0.70 0.93 0.027 0.037<br>b2 1.14 1.70 0.045 0.067<br>c 0.45 0.60 0.017 0.024<br>c2 1.23 1.36 0.048 0.053<br>D 8.95 9.35 0.352 0.368<br>D1 7.50 0.295<br>E 10 10.40 0.394 0.409<br>E1 8.50 0.334<br>e 2.54 0.1<br>e1 4.88 5.28 0.192 0.208<br>H 15 15.85 0.590 0.624<br>J1 2.49 2.69 0.099 0.106<br>L 2.29 2.79 0.090 0.110<br>L1 1.27 1.40 0.05 0.055<br>L2 1.30 1.75 0.051 0.069<br>R 0.4 0.016<br>V2 0° 8° 0° 8°<br>0079457_M<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **D[2] PAK FOOTPRINT** 

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TAPE AND REEL SHIPMENT<br>REEL MECHANICAL DATA<br>neces hole| A |—T mm inch<br>at slot location DIM.<br>MIN. MAX. MIN. MAX.<br>A 330 12.992<br>B 1.5 0.059<br>C 12.8 13.2 0.504 0.520<br>r( of ZN) EEA. D 20.2 0795<br>G 24.4 26.4 0.960 1.039<br>| ro / trl |<br>N 100 3.937<br>in core for at hub<br>tape start T 30.4 1.197<br>| Full radhis\ 251 / Tapein. slot 7 G measured<br>with ™<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>1000 1000<br>mm inch<br>DIM. a -><br>MIN. MAX. MIN. MAX.<br>Pee +}<br>A0 10.5 10.7 0.413 0.421<br>es ee ee ee fok appPs pe, 7 te10 p i tcheseao n cumulativetapece<br>B0 15.7 15.9 0.618 0.626<br>D 1.5 1.6 0.059 0.063<br>D1 1.59 1.61 0.062 0.063<br>a E 1.65 1.85 0.065 0.073 | bole<br>ee ALetfe fof ed vs<br>F 11.4 11.6 0.449 0.456<br>K0 4.8 5.0 0.189 0.197 — — of cavity<br>P0 3.9 4.1 0.153 0.161<br>ee P1 11.9 12.1 0.468 0.476<br>P2 1.9 2.1 0.075 0.082<br>R 50 1.574<br>CI T 0.25 0.35 0.0098 0.0137<br>rf W 23.7 fT 24.3 I 0.933 I 0.956 ——>E>—E—EEEFEED DIRECTION Bending radius<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 8.** 

**Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-May-2009|7|New ECOPACK®statement in_Section 4: Package mechanical_<br>_data_<br>Content reworked to improve readability, no technical changes|
|06-Aug-2009|8|_Table 3: Thermal data_has been updated|



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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stp85nf55l/mosfet-n-ch-55v-80a-to-220ab/dp/2807223)
---

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