# Power MOSFET, N Channel, 55 V, 80 A, 6500 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:4036334/)

**URL**: https://novapart.co/products/STP80NF55/power-mosfet-n-channel-55-v-80-a-6500-ohm-to-220
**SKU**: STP80NF55
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0900
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET Series |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036334/)

**==> picture [61 x 39] intentionally omitted <==**

## **STB80NF55-08T4 STP80NF55-08, STW80NF55-08** N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D[2] PAK, TO-247 STripFET™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB80NF55-08T4|55 V|< 0.008Ω|80 A|
|STP80NF55-08|55 V|< 0.008Ω|80 A|
|STW80NF55-08|55 V|< 0.008Ω|80 A|



■ Standard threshold drive 

## **Application** 

■ Switching applications 

**==> picture [193 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2 3<br>1 2<br>1<br>TO-247<br>TO-220<br>3<br>1<br>D²PAK<br>**----- End of picture text -----**<br>


## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

**==> picture [90 x 133] intentionally omitted <==**

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB80NF55-08T4|B80NF55-08|D²PAK|Tape and reel|
|STP80NF55-08|P80NF55-08|TO-220|Tube|
|STW80NF55-08|W80NF55-08|TO-247|Tube|



1/15 

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Doc ID 14511 Rev 2 

_www.st.com_ 

|**Contents**|**STB80NF55-08T4, STP80NF55-08, STW80NF55-08**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|55|V|
|VGS|Gate- source voltage|±20|V|
|ID<br>(1)|Drain current (continuos) at TC= 25 °C|80|A|
|ID<br>(1)|Drain current (continuos) at TC= 100 °C|80|A|
|IDM<br>(2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
||Derating factor|2|W/°C|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 175|°C|



1. Current limited package 

2. Pulse width limited by safe operating area 

**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**D2PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistance junction-case max|0.5|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|35(1)|62.5|50|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300|||°C|



1. When mounted on 1 inch[2] FR-4 board, 2 oz Cu 

**Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max value**|**Unit**|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tjmax)|40|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 30 V)|1000|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250 µA, VGS= 0|55|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= max rating<br>VDS= max rating@125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 40 A||0.0065|0.008|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15 V , ID= 18 A||40||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0||3740<br>830<br>265||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 27 V, ID= 80 A<br>VGS=10 V<br>(see Figure 14)||112<br>20<br>40|155|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 

**Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 27 V, ID= 40 A<br>RG= 4.7ΩVGS= 10 V<br>(see Figure 13)||20<br>110<br>75<br>35||ns<br>ns<br>ns<br>ns|



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**STB80NF55-08T4, STP80NF55-08, STW80NF55-08** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD|Source-drain current||||80|A|
|ISDM (1)|Source-drain current (pulsed)||||320|A|
|VSD|Forward on voltage|ISD= 80 A, VGS= 0|||1.5|V|
|trr<br>(2)<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 80 A,VDD= 25 V<br>di/dt=100 A/µs,<br>Tj=150 °C<br>(see Figure 18)||80<br>230<br>5.7||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 

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**STB80NF55-08T4, STP80NF55-08, STW80NF55-08** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

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**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**==> picture [164 x 153] intentionally omitted <==**

**==> picture [164 x 151] intentionally omitted <==**

**Figure 6. Normalized BVDSS vs temperature** 

**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

**==> picture [164 x 153] intentionally omitted <==**

**==> picture [164 x 153] intentionally omitted <==**

**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

**==> picture [164 x 149] intentionally omitted <==**

**==> picture [164 x 149] intentionally omitted <==**

## **Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

**==> picture [209 x 88] intentionally omitted <==**

**==> picture [179 x 121] intentionally omitted <==**

**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [200 x 117] intentionally omitted <==**

**==> picture [179 x 119] intentionally omitted <==**

## **Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-220 mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.48||0.70|0.019||0.027|
|D|15.25||15.75|0.6||0.62|
|D1||1.27|||0.050||
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.051|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|∅P|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|



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**Package mechanical data** 

|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**TO**||**-247 Mechanical data**|||||||
|||||||||||||||
||**Dim.**||||||||||**mm.**|||
||||||**Min.**||||||**Typ**||**Max.**|
||A||||4.85||||||||5.15|
||A1||||2.20||||||||2.60|
||b||||1.0||||||||1.40|
||b1||||2.0||||||||2.40|
||b2||||3.0||||||||3.40|
||c||||0.40||||||||0.80|
||D||||19.85||||||||20.15|
||E||||15.45||||||||15.75|
||e||||||||||5.45|||
||L||||14.20||||||||14.80|
||L1||||3.7|0|||||||4.30|
||L2||||||||||18.50|||
||øP||||3.5|5|||||||3.65|
||øR||||4.5|0|||||||5.50|
||S||||||||||5.50|||
|||||||||||||||
|||||||||||||||
|||||||||||||||
|||||||||||||||
|||||||||||||||
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**Package mechanical data** 

## **D²PAK (TO-263) mechanical data** 

|**Dim**|||**mm**|**mm**|**inch**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|---|---|
|||**Min**|**Typ**<br>**Ma**||**x**<br>**Min**||**Typ**|**Max**|
|A||4.40|4.6||0<br>0.173|||0.181|
|A1||0.03|0.2||3<br>0.001|||0.009|
|b||0.70|0.9||3<br>0.027|||0.037|
|b2||1.14|1.7||0<br>0.045|||0.067|
|c||0.45|0.6||0<br>0.017|||0.024|
|c2||1.23|1.3||6<br>0.048|||0.053|
|D||8.95|9.3||5<br>0.352|||0.368|
|D1||7.50|||0.295||||
|E||10|10.4||0<br>0.394|||0.409|
|E1||8.50|||0.334||||
|e|||2.54||||0.1||
|e1||4.88||5.2|8<br>0.192|||0.208|
|H||15||15.8|5<br>0.590|||0.624|
|J1||2.49||2.6|9<br>0.099|||0.106|
|L||2.29||2.7|9<br>0.090|||0.110|
|L1||1.27||1.4|0<br>0.05|||0.055|
|L2||1.30||1.7|5<br>0.051|||0.069|
|R|||0.4||||0.016||
|V2||0°||8°|0|°||8°|
||||||||||
||||||||||
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|||0079457_M|||||||
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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**==> picture [108 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
D [2] PAK FOOTPRINT<br>**----- End of picture text -----**<br>


## **TAPE AND REEL SHIPMENT** 

**==> picture [379 x 355] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>Access40 mm min.hole . L T mm inch<br>DIM.<br>MIN. MAX. MIN. MAX.<br>A 330 12.992<br>B 1.5 0.059<br>| ap<br>Tt — ty ~7Tr@ at slot location c tif| C 12.8 13.2 0.504 0.520<br>D 20.2 0795<br>A o KO LEN G 24.4 26.4 0.960 1.039<br>Full radius / Tape slot G measured N 100 3.937<br>in core for at hub<br>T 30.4 1.197<br>25mm min.<br>tape start | |<br>width<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>1000 1000<br>mm inch<br>DIM. ee -——}——J<br>a MIN. MAX. ee MIN. MAX. |<br>A0 10.5 10.7 0.413 0.421<br>B0 15.7 15.9 0.618 0.626<br>D 1.5 1.6 0.059 0.063<br>D1 1.59 1.61 0.062 0.063<br>E 1.65 1.85 0.065 0.073<br>——}-- + 4 HREEEES °<br>F 11.4 11.6 0.449 0.456<br>r K0 | 4.8 ff 5.0 0.189 ft 0.197 _ of cavity<br>r P0 | 3.9 ff 4.1 0.153 [| 0.161 TRL User Directionof Feed<br>P1 11.9 12.1 0.468 0.476<br>P2 1.9 2.1 0.075 0.082<br>R 50 1.574<br>T 0.25 0.35 0.0098 0.0137<br>——Lt 1 (BEBE zs ~<br>W 23.7 24.3 0.933 0.956<br>| |TTUT CT CT FEED DIRECTION, Bending racus<br>* on sales type<br>**----- End of picture text -----**<br>


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**STB80NF55-08T4, STP80NF55-08, STW80NF55-08** 

**Revision history** 

## **6 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Mar-2008|1|First release|
|15-Apr-2009|2|_Table 1: Device summary_has been updated|



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## **Please Read Carefully:** 

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15/15 

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## Links

- [View this product on Novapart](https://novapart.co/products/STP80NF55/power-mosfet-n-channel-55-v-80-a-6500-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp80nf55/mosfet-n-ch-55v-80a-to-220/dp/4036334)
---

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