# Power MOSFET, N Channel, 55 V, 80 A, 6500 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3367075/)

**URL**: https://novapart.co/products/STP80NF55-08AG/power-mosfet-n-channel-55-v-80-a-6500-ohm-to-220
**SKU**: STP80NF55-08AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0400
**Stock**: 10+

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET |
| Qualification | AEC-Q101 |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367075/)

## **STB80NF55-08AG, STP80NF55-08AG** 

Automotive-grade N-channel 55 V, 6.5 mΩ  typ.,80 A STripFET™ Power MOSFETs  in D²PAK and TO-220 packages 

**Datasheet — production data** 

## **Features** 

**==> picture [175 x 71] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB TAB<br>3 3<br>1 1 [2]<br>D [2] PAK TO-220<br>**----- End of picture text -----**<br>


|**Features**||||
|---|---|---|---|
|**Order code**|**VDSS**|**RDS(on)max**|**ID**|
|STB80NF55-08AG|55 V|8 mΩ|80 A|
|STP80NF55-08AG||||



- Designed for automotive applications and AEC-Q101 qualified 

- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Figure 1.  Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packing**|
|---|---|---|---|
|STB80NF55-08AG|B80NF55-08|D²PAK|Tape and reel|
|STP80NF55-08AG|P80NF55-08|TO-220|Tube|



This is information on a product in full production. 

_www.st.com_ 

September 2016 DocID029701 Rev 1 1/18 

|**Contents**|**STB80NF55-08AG, STP80NF55-08AG**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||4.2<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|55|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|80|A|
|ID<br>(1)|Drain current (continuous) at TC= 100 °C|80|A|
|IDM (2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
|Tstg|Operating junction temperature range|- 55 to 175|°C|
|Tj|Storage temperature range|||



1. Current limited package 

2. Pulse width limited by safe operating area 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D²PAK**|**TO-220**||
|Rthj-case|Thermal resistance junction-case|0.5||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb|35(1)||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|°C/W|



1. When mounted on 1 inch[2] FR-4 board, 2 oz Cu 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj max)|40|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAR, VDD= 30 V)|1000|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5. On/off states** 

|||**Table 5. On/off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0 V, ID= 250μA|55|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V, VDS= 55 V|||1|µA|
|||VGS= 0 V, VDS= 55 V,<br>TC=125°C(1)|||10|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V<br>VGS= ± 20 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 40 A||6.5|8|mΩ|



1. Defined by design, not subject to production test 

**Table 6. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs<br>(1)|Forward transconductance|VDS= 15 V, ID= 18 A|-|40|-|S|
|Ciss|Input capacitance|VGS= 0 V, VDS= 25 V,<br>f = 1 MHz||3740||pF|
|Coss|Output capacitance||-|830|-|pF|
|Crss|Reverse transfer<br>capacitance||-|265|-|pF|
|Qg|Total gate charge|VDD= 27 V, ID= 80 A,<br>VGS= 10 V,<br>(_Figure 14: Gate charge test_<br>_circuit_)|-|112|155|nC|
|Qgs|Gate-source charge||-|20|-|nC|
|Qgd|Gate-drain charge||-|40|-|nC|



1. Pulsed: pulse duration=300 μs, duty cycle 1.5% 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 27 V, ID= 40 A<br>RG= 4.7Ω, VGS= 10 V<br>(_Figure 13: Switching times_<br>_test circuit for resistive load_<br>and_Figure 18: Switching_<br>_time waveform_.)|-|20|-|ns|
|tr|Rise time||-|110|-|ns|
|td(off)|Turn-off delay time||-|75|-|ns|
|tf|Fall time||-|35|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||80|A|
|ISDM (1)|Source-drain current (pulsed)||-||320|A|
|VSD|Forward on voltage|ISD= 80 A, VGS= 0 V|-||1.5|V|
|trr<br>(2)|Reverse recovery time|ISD= 80 A, VDD= 25 V,<br>di/dt = 100 A/µs<br>Tj= 150 °C<br>(_Figure 15: Test circuit for_<br>_inductive load switching_<br>_and diode recovery times_)|-|80||ns|
|Qrr|Reverse recovery charge||-|230||nC|
|IRRM|Reverse recovery current||-|5.7||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Normalized V(BR)DSS vs temperature** 

**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**Figure 9. Capacitance variations** 

**Figure 10. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized on resistance vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

**==> picture [177 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
HV31600<br>V SD (V)<br>1.1<br>Tj=-40°C<br>25°C<br>0.9<br>150°C<br>0.7<br>0.5<br>0.3<br>0 20 40 60 80 I SD (A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [462 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Switching times test circuit for  Figure 14. Gate charge test circuit<br>resistive load VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3 IG=CONST<br>μF μF VDD Vi=20V=VGMAX 100Ω D.U.T.<br>VD 2200<br>VGS μF 2.7kΩ VG<br>RG D.U.T.<br>47kΩ<br>PW<br>1kΩ<br>PW<br>AM01469v1<br>AM01468v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D VD 2200 3.3<br>G D.U.T. FASTDIODE L=100μH μF μF VDD<br>S B 3.3 1000 ID<br>25 Ω B B D μF μF VDD<br>G<br>Vi D.U.T.<br>RG S<br>Pw<br>AM01471v1<br>AM01470v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>10% VDS<br>ID 0<br>VDD VDD 90%<br>VGS<br>0 10%<br>AM01472v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 D[2] PAK package information** 

**==> picture [236 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. D²PAK (TO-263) type A package outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 452] intentionally omitted <==**

**----- Start of picture text -----**<br>
���������������<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 9. D²PAK (TO-263) type A package mechanical data** 

||**Table 9. D²PAK(TO-263) type Apackage mechanical data**|**Table 9. D²PAK(TO-263) type Apackage mechanical data**|**Table 9. D²PAK(TO-263) type Apackage mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package information** 

## **Figure 20. D²PAK footprint[(a)]** 

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- a. All dimension are in millimeters 

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**Package information** 

## **4.2 TO-220 type A package information** 

**==> picture [196 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. TO-220 type A package outline<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 10. TO-220 type A mechanical data** 

||**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Packing information** 

## **5 Packing information** 

**==> picture [74 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. Tape<br>**----- End of picture text -----**<br>


**==> picture [390 x 298] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>iv 000 g 5 ome) 5 © 00<br>F<br>K0 W<br>B1 B0<br>A P R IEI R I L I E E SS<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ——<br>User direction of feed<br>R<br>beeeES6<br>—— Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


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**Packing information** 

**==> picture [405 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 11. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Revision history** 

## **6 Revision history** 

**Figure 24. Document revision history** 

||**Figure**|**24. Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|07-Sep-2016|1|First release|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2016 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STP80NF55-08AG/power-mosfet-n-channel-55-v-80-a-6500-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp80nf55-08ag/mosfet-aec-q101-n-ch-55v-80a-300w/dp/3367075)
---

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