# Power MOSFET, N Channel, 120 V, 80 A, 0.013 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1752171/)

**URL**: https://novapart.co/products/STP80NF12/power-mosfet-n-channel-120-v-80-a-0013-ohm-to-220
**SKU**: STP80NF12
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7730
**Stock**: 25+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 120V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.013ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752171/)

## **STP80NF12** 

N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package 

**Datasheet** - **production data** 

## **Features** 

**==> picture [70 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


|**Type**|**VDSS**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STP80NF12|120 V|< 0.018Ω|80 A|



- Exceptional dv/dt capability 

- 100% avalanche tested 

- Application oriented characterization 

## **Application** 

- Switching applications 

## **Description** 

## **Figure 1. Internal schematic diagram** 

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP80NF12|P80NF12|TO-220|Tube|



_www.st.com_ 

February 2014 

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This is information on a product in full production. 

**Contents** 

**STP80NF12** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|120|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|80|A|
|ID|Drain current (continuous) at TC=100 °C|60|A|
|IDM<br>(2)|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
||Derating factor|2.0|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|10|V/ns|
|EAS<br>(4)|Single pulse avalanche energy|350|mJ|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 175|°C|



1. Limited by package 

2. Pulse width limited by safe operating area 

3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS 

4. Starting TJ = 25 °C, ID = 40 A, VDD = 50 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case max|0.5|°C/W|
|RthJA|Thermal resistance junction-ambient max|62.5|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250μA, VGS= 0|120|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= max rating<br>VDS= max rating @125°C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 40 A||0.013|0.018|Ω|



**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs<br>(1)|Forward transconductance|VDS=15 V, ID= 40 A|-|80||S|
|Ciss|Input capacitance|VDS=25 V, f=1 MHz,<br>VGS=0|-|4300||pF|
|Coss|Output capacitance||-|600||pF|
|Crss|Reverse transfer<br>capacitance||-|230||pF|
|Qgs|Total gate charge|VDD= 80 V, ID= 80 A<br>VGS=10 V|-|140|189|nC|
|Qgs|Gate-source charge||-|23||nC|
|Qgd|Gate-drain charge||-|51||nC|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 50 V, ID= 40 A,<br>RG=4.7Ω,VGS=10 V<br>See_Figure 13_|-|40|-|ns|
|tr|Rise time||-|145|-|ns|
|td(off)|Turn-off delay time||-|134|-|ns|
|tf|Fall time||-|115|-|ns|



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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-|-|80|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-|-|320|A|
|VSD<br>(2)|Forward on voltage|ISD=80 A, VGS=0|-|-|1.3|V|
|trr|Reverse recovery time|ISD=80 A,<br>di/dt = 100 A/µs,<br>VDD=35 V, TJ= 150 °C|-|155||ns|
|Qrr|Reverse recovery charge||-|0.85||µC|
|IRRM|Reverse recovery current||-|11||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**==> picture [163 x 157] intentionally omitted <==**

**Figure 4. Output characteristics** 

**==> picture [163 x 157] intentionally omitted <==**

**Figure 6. Normalized BVDSS vs. temperature** 

**==> picture [163 x 149] intentionally omitted <==**

## **Figure 3. Thermal impedance** 

**==> picture [152 x 151] intentionally omitted <==**

**Figure 5. Transfer characteristics** 

**==> picture [163 x 157] intentionally omitted <==**

**Figure 7. Static drain-source on resistance** 

**==> picture [163 x 156] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 8. Gate charge vs. gate-source voltage** 

**==> picture [163 x 149] intentionally omitted <==**

**Figure 10. Normalized gate threshold voltage vs. temperature** 

**==> picture [163 x 149] intentionally omitted <==**

**Figure 9. Capacitance variations** 

**==> picture [163 x 151] intentionally omitted <==**

**Figure 11. Normalized on resistance vs. temperature** 

**==> picture [163 x 148] intentionally omitted <==**

**Figure 12. Source-drain diode forward characteristics** 

**==> picture [163 x 152] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **Figure 19. TO-220 type A drawing** 

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**Package mechanical data** 

**Table 8. TO-220 type A mechanical data** 

||**Table 8. TO-220 type A mechanical data**|**Table 8. TO-220 type A mechanical data**|**Table 8. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Revision history** 

## **5 Revision history** 

**Table 9. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Jun-2004|2|Preliminary version|
|24-Jul-2006|3|The document has been reformatted, SOA updated|
|31-Jan-2007|4|Typo mistake on_Table 2_.|
|10-Apr-2007|5|Typo mistake on_Table 2_and_Table 3_|
|19-Apr-2007|6|Corrected value on_Table 4_|
|17-Nov-2008|7|Inserted EASvalue on_Table 2_.|
|26-Feb-2014|8|Updated:_Section 4: Package mechanical data_<br>Inserted EASvalue on_Table 2_.<br>Added value VGSon_Table 4_|



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