# Power MOSFET, N Channel, 100 V, 40 A, 0.012 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:1752168/)

**URL**: https://novapart.co/products/STP80NF10FP/power-mosfet-n-channel-100-v-40-a-0012-ohm-to
**SKU**: STP80NF10FP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7780
**Stock**: 50+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752168/)

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## **STP80NF10FP** N-channel 100V - 0.012 Ω - 38A - TO-220FP Low gate charge STripFET™ II Power MOSFET 

## **General features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**<br>**(1)**|
|---|---|---|---|
|STP80NF10FP|100V|<0.015Ω|38A|



- Exceptional dv/dt capability 

- 100% Avalanche tested 

- Application oriented characterization 

## **Description** 

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. 

## **Applications** 

- Switching application 

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**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-220FP<br>**----- End of picture text -----**<br>


## **Internal schematic diagram** 

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## **Order codes** 

|**Order codes**||||
|---|---|---|---|
|**Part number**|**Marking**|**Package**|**Packaging**|
|STP80NF10FP|P80NF10FP|TO-220FP|Tube|



_www.st.com_ 

April 2006 

Rev 1 

1/12 

**Contents** 

**STP80NF10FP** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**STP80NF10FP** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|100|V|
|VGS|Gate- source voltage|±20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25°C|38|A|
|ID<br>(1)|Drain current (continuous) at TC= 100°C|27|A|
|IDM<br>(2)|Drain current (pulsed)|152|A|
|PTOT|Total dissipation at TC= 25°C|45|W|
||Derating factor|0.3|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|9|V/ns|
|EAS<br>(4)|Single pulse avalanche energy|350|mJ|
|VISO|Insulation withstand voltage (DC)|2500|V|
|Tstg<br>Tj|Storage temperature<br>Operating junction temperature|-55 to 175|°C|



1. Limited by Package 

2. Pulse width limited by safe operating area 

3. ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS 

4. Starting Tj = 25°C, ID = 80A, VDD = 50V 

**Table 2. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case Max|3.33|°C/W|
|Rthj-amb|Thermal resistance junction-ambient Max|62.5|°C/W|
|Tl|Maximum lead temperature for soldering purpose|300|°C|



3/12 

**STP80NF10FP** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 3. On/off states** 

|**Table 3.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test condictions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250µA, VGS= 0|100|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating @125°C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±20V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2|3|4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10V, ID= 40A||0.012|0.015|Ω|



## **Table 4. Dynamic** 

|**Table 4.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test condictions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=25V,ID=40 A||80||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25V, f = 1 MHz,<br>VGS= 0||4300<br>600<br>230||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 80V, ID= 80A,<br>VGS= 10V||140<br>23<br>51|189|nC<br>nC<br>nC|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 

4/12 

**STP80NF10FP** 

**Electrical characteristics** 

**Table 5. Switching times** 

|**Table 5.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test condictions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 50V, ID= 40A,<br>RG= 4.7Ω,VGS=10V<br>(see Figure 14)||40<br>145<br>134<br>115||ns<br>ns<br>ns<br>ns|



## **Table 6. Source drain diode** 

|**Table 6.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test condictions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||||38<br>152|A<br>A|
|VSD (2)|Forward on voltage|ISD= 80A, VGS= 0|||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=80A, VDD= 50V<br>di/dt = 100A/µs,Tj=150°C||155<br>850<br>11||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 

5/12 

**STP80NF10FP** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Safe operating area** 

**Figure 2. Thermal impedance** 

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**Figure 3. Output characterisics** 

## **Figure 4. Transfer characteristics** 

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**Figure 5. Transconductance Figure 6. Static drain-source on resistance** 

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6/12 

**STP80NF10FP** 

**Electrical characteristics** 

**Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations** 

**==> picture [164 x 149] intentionally omitted <==**

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**Figure 9. Normalized gate threshold voltage vs temperature** 

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**Figure 10. Normalized on resistance vs temperature** 

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**Figure 11. Source-drain diode forward characteristics** 

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7/12 

**STP80NF10FP** 

**Test circuit** 

## **3 Test circuit** 

**Figure 12. Switching times test circuit for resistive load** 

**==> picture [209 x 88] intentionally omitted <==**

**Figure 14. Test circuit for inductive load switching and diode recovery times** 

**==> picture [200 x 117] intentionally omitted <==**

**Figure 16. Unclamped inductive waveform** 

**==> picture [164 x 134] intentionally omitted <==**

**Figure 13. Gate charge test circuit** 

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**Figure 15. Unclamped inductive load test circuit** 

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**Figure 17. Switching time waveform** 

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**STP80NF10FP** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

9/12 

**STP80NF10FP** 

**Package mechanical data** 

**==> picture [405 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.4 4.6 0.173 0.181<br>B 2.5 2.7 0.098 0.106<br>D 2.5 2.75 0.098 0.108<br>E 0.45 0.7 0.017 0.027<br>F 0.75 1 0.030 0.039<br>F1 1.15 1.7 0.045 0.067<br>F2 1.15 1.7 0.045 0.067<br>G 4.95 5.2 0.195 0.204<br>G1 2.4 2.7 0.094 0.106<br>H 10 10.4 0.393 0.409<br>L2 16 0.630<br>L3 28.6 30.6 1.126 1.204<br>L4 9.8 10.6 .0385 0.417<br>L5 2.9 3.6 0.114 0.141<br>L6 15.9 16.4 0.626 0.645<br>L7 9 9.3 0.354 0.366<br>Ø 3 3.2 0.118 0.126<br>L3<br>L6<br>L7<br>1 2 3<br>L5<br>L2 L4<br>F1 F<br>G<br>F2<br>E<br>A<br>D<br>B<br>G1<br>H<br>**----- End of picture text -----**<br>


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**STP80NF10FP** 

**Revision history** 

## **5 Revision history** 

**Table 7. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-Apr-2006|1|First Release|



11/12 

**STP80NF10FP** 

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