# Power MOSFET, N Channel, 600 V, 5 A, 0.86 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2629760/)

**URL**: https://novapart.co/products/STP7N60M2/power-mosfet-n-channel-600-v-5-a-086-ohm-to-220
**SKU**: STP7N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3820
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Qualification | - |
| Power Dissipation | 60W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.86ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629760/)

## **STD7N60M2, STP7N60M2, STU7N60M2** 

Datasheet 

N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages 

**==> picture [124 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB TAB<br>3<br>DPAK 1<br>@<br>TAB TO-220 1 [2 3]<br>IPAK aN 1 2 3<br>D(2, TAB)<br>G(1)<br>S(3) AM01475V1<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**<br>~~Se~~|**VDS @ TJmax**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STD7N60M2<br>~~Se~~|650 V|0.95 Ω|5 A|
|STP7N60M2||||
|STU7N60M2||||



- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

|**Product summary**<br>~~ooo~~|**Product summary**<br>~~ooo~~|
|---|---|
|**Order code**<br>~~rr~~|**STD7N60M2**<br>~~r~~|
|**Marking**|7N60M2|
|**Package**|DPAK|
|**Packing**|Tape and reel|
|**Order code**<br>r~~r~~|**STP7N60M2**<br>~~r~~|
|**Marking**|7N60M2|
|**Package**|TO-220|
|**Packing**|Tube|
|**Order code**<br>~~a~~|**STU7N60M2**<br>~~a~~|
|**Marking**|7N60M2|
|**Package**|IPAK|
|**Packing**|Tube|



**DS9653** - **Rev 2** - **July 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD7N60M2, STP7N60M2, STU7N60M2 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID (1)|Drain current (continuous) at Tcase= 25 °C|5|A|
||Drain current (continuous) at Tcase= 100 °C|3.5||
|IDM (2)|Drain current (pulsed)|20|A|
|PTOT|Total dissipation at Tcase= 25 °C|60|W|
|dv/dt(3)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||



_1. Limited by maximum junction temperature._ 

_2. Pulse width limited by safe operating area._ 

_3. ISD ≤ 5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V_ 

_4. VDS ≤ 480 V_ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|
|**ymo**|**arameer**|**DPAK**|**TO-220**|**IPAK**|**n**|
|Rthj-case|Thermal resistance junction-case|2.08|||°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|50|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|100|°C/W|



_1. When mounted on 1 inch² FR-4, 2 Oz copper board_ 

## **Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive (pulse width limited by TJmax)|1.5|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|99|mJ|



**DS9653** - **Rev 2** 

**page 2/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 4. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>Tcase= 125 °C(1)|||100||
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 2.5 A||0.86|0.95|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|271|-|pF|
|Coss|Output capacitance||-|15.7|-||
|Crss|Reverse transfer capacitance||-|0.68|-||
|Coss eq. (1)|Equivalent output capacitance|VDS= 0 to 480 V, VGS= 0 V|-|75.5|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|7.2|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 5 A,<br>VGS= 0 to 10 V (seeFigure 17. Test<br>circuit for gate charge behavior)|-|8.8|-|nC|
|Qgs|Gate-source charge||-|1.8|-||
|Qgd|Gate-drain charge||-|4.3|-||



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time<br><br><br> <br> <br> <br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 300 V, ID= 2.5 A, RG= 4.7 Ω,<br>VGS= 10 V<br>(seeFigure 16. Test circuit for<br>resistive load switching timesand<br>Figure 21. Switching time waveform)|-|7.6|-|ns|
|tr|||-|7.2|-||
|td(off)|||-|19.3|-||
|tf|||-|15.9|-||



**DS9653** - **Rev 2** 

**page 3/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||5|A|
|ISDM (1)|Source-drain current (pulsed)||-||20|A|
|VSD (2)|Forward on voltage|VGS= 0 V, ISD= 5 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 60 V (seeFigure 18. Test<br>circuit for inductive load switching and<br>diode recovery times)|-|275||ns|
|Qrr|Reverse recovery charge||-|1.55||μC|
|IRRM|Reverse recovery current||-|11||A|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C (seeFigure<br>18. Test circuit for inductive load<br>switching and diode recovery times)|-|376||ns|
|Qrr|Reverse recovery charge||-|2.1||μC|
|IRRM|Reverse recovery current||-|11||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS9653** - **Rev 2** 

**page 4/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for DPAK and IPAK** 

**==> picture [184 x 151] intentionally omitted <==**

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ID AM15887v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>Tj=150°C<br>0.1<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 3. Thermal impedance for DPAK and IPAK** 

**==> picture [155 x 157] intentionally omitted <==**

**Figure 4. Safe operating area for TO-220** 

**==> picture [184 x 151] intentionally omitted <==**

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ID AM15814v1<br>(A)<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>Tj=150°C<br>0.1<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 5. Thermal impedance for TO-220** 

**==> picture [167 x 161] intentionally omitted <==**

**==> picture [513 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Output characteristics Figure 7. Transfer characteristics<br>ID AM15815v1 ID AM15816v1<br>(A) VGS=7, 8, 9, 10, 11V (A)<br>6V<br>8 8<br>VDS = 19 V<br>6 6<br>4 4<br>5V<br>2 2<br>4V<br>0 3V<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 5/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Electrical characteristics (curves)** 

**Figure 8. Gate charge vs gate-source voltage** 

**==> picture [170 x 151] intentionally omitted <==**

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GADG260620181158SA<br>VGS<br>VDS<br>(V) VDDID=5A=480V (V)<br>12<br>VDS 500<br>10<br>400<br>8<br>300<br>6<br>200<br>4<br>100<br>2<br>0 0<br>0 2 4 6 8 10 Qg(nC)<br>**----- End of picture text -----**<br>


**Figure 9. Static drain-source on-resistance** 

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**----- Start of picture text -----**<br>
AM15817v1<br>RDS(on)<br>( W )<br>0.910 VGS=10V<br>0.900<br>0.890<br>0.880<br>0.870<br>0.860<br>0.850<br>0.840<br>0.830<br>0 1 2 3 4 5 ID(A)<br>**----- End of picture text -----**<br>


**Figure 10. Capacitance variations** 

**==> picture [173 x 150] intentionally omitted <==**

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C AM15818v1<br>(pF)<br>1000<br>Ciss<br>100<br>10 f = 1 Mhz Coss<br>1<br>Crss<br>0.1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Output capacitance stored energy** 

**==> picture [158 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
EOSS AM15819v1<br>(µJ)<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Normalized gate threshold voltage vs<br>Figure 13. Normalized on-resistance vs temperature<br>temperature<br>VGS(th) AM15718v1 (norm)RDS(on) AM15821v1<br>(norm) 2.5<br>1.1 ID=250µA<br>2.1<br>1.0<br>1.7<br>0.9 VGS = 10 V<br>1.3<br>0.8<br>0.9<br>0.7<br>0.5<br>0.6-50 0 50 100 TJ(°C) -50 0 50 100 Tj(°C)<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 6/26** 

**STD7N60M2, STP7N60M2, STU7N60M2** 

**Electrical characteristics (curves)** 

**==> picture [513 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Source-drain diode forward characteristics Figure 15. Normalized V(BR)DSS vs temperature<br>VSD GADG220620181113SA VDS GADG260620181155SA<br>(V) (norm)<br>1.4 1.11<br>ID = 1mA<br>1.09<br>1.2<br>TJ=-50°C 1.07<br>1<br>1.05<br>0.8 1.03<br>0.6 1.01<br>TJ=150°C TJ=25°C<br>0.99<br>0.4<br>0.97<br>0.2<br>0.95<br>0 0.93<br>0 1 2 3 4 5 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 7/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. Test circuit for inductive load switching and<br>Figure 19. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. Switching time waveform<br>Figure 20. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 8/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS9653** - **Rev 2** 

**page 9/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type A package information** 

**4.1 DPAK (TO-252) type A package information** 

**Figure 22. DPAK (TO-252) type A package outline** 

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0068772_A_25<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 10/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type A package information** 

**Table 8. DPAK (TO-252) type A mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.159|2.286|2.413|
|e1|4.445|4.572|4.699|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS9653** - **Rev 2** 

**page 11/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type C package information** 

- **4.2 DPAK (TO-252) type C package information** 

**Figure 23. DPAK (TO-252) type C package outline** 

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**----- Start of picture text -----**<br>
0068772_C_25<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 12/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type C package information** 

**Table 9. DPAK (TO-252) type C mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.25|||
|E|6.50|6.60|6.70|
|E1|4.70|||
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS9653** - **Rev 2** 

**page 13/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type E package information** 

- **4.3 DPAK (TO-252) type E package information** 

**Figure 24. DPAK (TO-252) type E package outline** 

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**==> picture [180 x 180] intentionally omitted <==**

0068772_type-E_rev.25 

**DS9653** - **Rev 2** 

**page 14/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) type E package information** 

**Table 10. DPAK (TO-252) type E mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|



**Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

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**==> picture [37 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
FP_0068772_25<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 15/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) packing information** ~~To~~ **4.4** 

## **DPAK (TO-252) packing information** 

## **Figure 26. DPAK (TO-252) tape outline** 

**==> picture [398 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>B1 J) K0 B0 paeg e s W<br>I<br>f f  PEREllos oe oes:<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>R<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 16/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 DPAK (TO-252) packing information** 

**Figure 27. DPAK (TO-252) reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 11. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



**DS9653** - **Rev 2** 

**page 17/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 TO-220 type A package information** 

## **4.5 TO-220 type A package information** 

**Figure 28. TO-220 type A package outline** 

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**==> picture [61 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_21<br>**----- End of picture text -----**<br>


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**page 18/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 TO-220 type A package information** 

## **Table 12. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**STD7N60M2, STP7N60M2, STU7N60M2 IPAK (TO-251) type A package information** 

**4.6 IPAK (TO-251) type A package information** 

**Figure 29. IPAK (TO-251) type A package outline** 

**==> picture [70 x 31] intentionally omitted <==**

**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_IK_typeA_rev14<br>**----- End of picture text -----**<br>


**DS9653** - **Rev 2** 

**page 20/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 IPAK (TO-251) type A package information** 

**Table 13. IPAK (TO-251) type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



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**page 21/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 IPAK (TO-251) type C package information** 

## **4.7 IPAK (TO-251) type C package information** 

**Figure 30. IPAK (TO-251) type C package outline** 

0068771_IK_typeC_rev14 

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**page 22/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 IPAK (TO-251) type C package information** 

**Table 14. IPAK (TO-251) type C package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.35|
|A1|0.90|1.00|1.10|
|b|0.66||0.79|
|b2|||0.90|
|b4|5.23|5.33|5.43|
|c|0.46||0.59|
|c2|0.46||0.59|
|D|6.00|6.10|6.20|
|D1|5.20|5.37|5.55|
|E|6.50|6.60|6.70|
|E1|4.60|4.78|4.95|
|e|2.20|2.25|2.30|
|e1|4.40|4.50|4.60|
|H|16.18|16.48|16.78|
|L|9.00|9.30|9.60|
|L1|0.80|1.00|1.20|
|L2|0.90|1.08|1.25|
|θ1|3°|5°|7°|
|θ2|1°|3°|5°|



**DS9653** - **Rev 2** 

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**STD7N60M2, STP7N60M2, STU7N60M2** 

## **Revision history** 

**Table 15. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|06-Jun-2013|1|First release.|
|12-Jul-2018|2|Removed maturity status indication from cover page. The document status is<br>production data.<br>AddedSection 4.2 DPAK (TO-252) type C package informationandSection 4.3 DPAK<br>(TO-252) type E package information.<br>Minor text changes.|



**DS9653** - **Rev 2** 

**page 24/26** 

**STD7N60M2, STP7N60M2, STU7N60M2 Contents** 

|**Contents**|**Contents**||
|---|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**||
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**||
||**4.1**|DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**|DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**|DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
||**4.4**|DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
||**4.5**|TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
||**4.6**|IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19|
||**4.7**|IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24**|||



**DS9653** - **Rev 2** 

**page 25/26** 

**STD7N60M2, STP7N60M2, STU7N60M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS9653** - **Rev 2** 

**page 26/26** 



## Links

- [View this product on Novapart](https://novapart.co/products/STP7N60M2/power-mosfet-n-channel-600-v-5-a-086-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp7n60m2/mosfet-n-ch-600v-5a-to-220-3/dp/2629760)
---

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