# Power MOSFET, N Channel, 600 V, 5 A, 1.2 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2098330/)

**URL**: https://novapart.co/products/STP5NK60Z/power-mosfet-n-channel-600-v-5-a-12-ohm-to-220
**SKU**: STP5NK60Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6570
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 1.2ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098330/)

## **STD5NK60Z STP5NK60Z - STP5NK60ZFP** N-CHANNEL 650V @Tjmax - 1.2 Ω - 5A TO-220/FP/DPAK Zener-Protected Su erMESH™ MOSFET p 

## **Table 1: General Features** 

|**TYPE**|**VDSS@**<br>**TJmax**|**RDS(on)**|**Id **|**PTOT**|
|---|---|---|---|---|
|STP5NK60Z<br>STP5NK60ZFP<br>STD5NK60Z|650 V<br>650 V<br>650 V|< 1.6Ω<br>< 1.6Ω<br>< 1.6Ω|5 A<br>5 A<br>5 A|90 W<br>25 W<br>90 W|



- TYPICAL RDS(on) = 1.2 Ω 

- EXTREMELY HIGH dv/dt CAPABILITY 

- 100% AVALANCHE TESTED 

- GATE CHARGE MINIMIZED 

- VERY LOW INTRINSIC CAPACITANCES 

- VERY GOOD MANUFACTURING REPEATIBILITY 

## **Figure 1: Package** 

**==> picture [186 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 3<br>2 2<br>1 1<br>TO-220 TO-220FP<br>3<br>1<br>DPAK<br>**----- End of picture text -----**<br>


## **DESCRIPTION** 

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 

## **APPLICATIONS** 

- HIGH CURRENT, HIGH SPEED SWITCHING 

- IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC 

- LIGHTING 

## **Figure 2: Internal Schematic Diagram** 

**==> picture [88 x 108] intentionally omitted <==**

**Table 2: Order Codes** 

|**Table 2: Order Codes**||||
|---|---|---|---|
|**SALES TYPE**|**MARKING**|**PACKAGE**|**PACKAGING**|
|STP5NK60Z|P5NK60Z|TO-220|TUBE|
|STP5NK60ZFP|P5NK60ZFP|TO-220FP|TUBE|
|STD5NK60ZT4|D5NK60|DPAK|TAPE & REEL|



Rev. 7 

December 2005 

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**Table 3: Absolute Maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220/DPAK**|**TO-220FP**||
|VDS|Drain-source Voltage (VGS= 0)|600||V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|600||V|
|VGS|Gate- source Voltage|± 30||V|
|ID|Drain Current (continuous) at TC= 25°C|5|5 (*)|A|
|ID|Drain Current (continuous) at TC= 100°C|3.16|3.16 (*)|A|
|IDM(�)|Drain Current (pulsed)|20|20 (*)|A|
|PTOT|Total Dissipation at TC= 25°C|90|25|W|
||Derating Factor|0.72|0.2|W/°C|
|VESD(G-S)|Gate source ESD(HBM-C=100pF, R=1.5KΩ)|3000||V|
|dv/dt (1)|Peak Diode Recovery voltage slope|4.5||V/ns|
|VISO|Insulation Withstand Voltage (DC)|-|2500|V|
|Tj<br>Tstg|Operating Junction Temperature<br>Storage Temperature|-55 to 150||°C|
|(�) Pulse width limited by safe operating area<br>(1) ISD ≤5A, di/dt≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.<br>(*) Limited only by maximum temperature allowed<br>Thermal Data|||||
|||**TO-220/DPAK**|**TO-220FP**||
|Rthj-case|Thermal Resistance Junction-case Max|1.39|5|°C/W|
|Rthj-amb|Thermal Resistance Junction-ambient Max|62.5||°C/W|
|Tl|Maximum Lead Temperature For Soldering Purpose|300||°C|



(#)  When mounted on 1inch² FR-4, 2 Oz copper board. 

**Table 4: Avalanche Characteristics** 

|**Symbol**|**Parameter**|**Max Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)|5|A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|220|mJ|



## **Table 5: Gate-Source Zener Diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO|Gate-Source Breakdown<br>Voltage|Igs=± 1mA (Open Drain)|30|||V|



## **PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES** 

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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## **ELECTRICAL CHARACTERISTICS** (TCASE =25°C UNLESS OTHERWISE SPECIFIED) **Table 6: On/Off** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20V|||±10|µA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 50µA|3|3.75|4.5|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 2.5 A||1.2|1.6|Ω|



## **Table 7: Dynamic** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs(1)|Forward Transconductance|VDS= 8 V,ID= 2.5 A||4||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||690<br>90<br>20||pF<br>pF<br>pF|
|Coss eq.(3)|Equivalent Output<br>Capacitance|VGS= 0V, VDS= 0V to 480V||40||pF|
|td(on)<br>tr<br>td(off)<br>tr|Turn-on Delay Time<br>Rise Time<br>Turn-off Delay Time<br>Fall Time|VDD= 300 V, ID= 2.5 A<br>RG= 4.7ΩVGS= 10 V<br>(see Figure 20)||16<br>25<br>36<br>25||ns<br>ns<br>ns<br>ns|
|tr(Voff)<br>tf<br>tc|Off-voltage Rise Time<br>Fall Time<br>Cross-over Time|VDD= 480V, ID= 5 A,<br>RG= 4.7Ω,VGS= 10V<br>(see Figure 20)||12<br>10<br>24||ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 400V, ID= 5 A,<br>VGS= 10V<br>(see Figure 23)||26<br>6<br>20|34|nC<br>nC<br>nC|



**Table 8: Source Drain Diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||5<br>20|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 5 A, VGS= 0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 5 A, di/dt = 100A/µs<br>VDD= 30V, Tj= 150°C<br>(see Figure 21)||485<br>2.7<br>11||ns<br>µC<br>A|



- Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

   2. Pulse width limited by safe operating area. 

   3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**Figure 3: Safe Operating Area For TO-220/ DPAK** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 4: Safe Operating Area For TO-220FP** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 5: Output Characteristics** 

**==> picture [179 x 178] intentionally omitted <==**

## **Figure 6: Thermal Impedance For TO-220/ DPAK** 

**==> picture [178 x 178] intentionally omitted <==**

**Figure 7: Thermal Impedance For TO-220FP** 

**==> picture [178 x 178] intentionally omitted <==**

**Figure 8: Transfer Characteristics** 

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**Figure 9: Transconductance** 

**==> picture [179 x 179] intentionally omitted <==**

**Figure 10: Gate Charge vs Gate-source Voltage** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 11: Normalized Gate Threshold Voltage** 

**vs Temperature** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 12: Static Drain-source On Resistance** 

**==> picture [178 x 178] intentionally omitted <==**

**Figure 13: Capacitance Variations** 

**==> picture [178 x 178] intentionally omitted <==**

**Figure 14: Normalized On Resistance vs Temperature** 

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**Figure 15:** 

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**Figure 16: Source-Drain Forward Characteristics** 

**==> picture [179 x 178] intentionally omitted <==**

**Figure 18: Normalized BVdss vs Temperature** 

**==> picture [178 x 178] intentionally omitted <==**

**Figure 17: Maximum Avalanche Energy vs Temperature** 

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**Figure 19: Unclamped Inductive Load Test Circuit** 

**==> picture [206 x 164] intentionally omitted <==**

**Figure 20: Switching Times Test Circuit For Resistive Load** 

**==> picture [207 x 86] intentionally omitted <==**

**Figure 22: Unclamped Inductive Wafeform** 

**==> picture [204 x 168] intentionally omitted <==**

**Figure 23: Gate Charge Test Circuit** 

**==> picture [206 x 164] intentionally omitted <==**

**Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times** 

**==> picture [219 x 190] intentionally omitted <==**

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## **STP5NK60Z - STP5NK60ZFP- STD5NK60Z** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

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## **TO-220 MECHANICAL DATA** 

|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.15||1.70|0.045||0.066|
|c|0.49||0.70|0.019||0.027|
|D|15.25||15.75|0.60||0.620|
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.052|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|øP|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|
||||||||



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**==> picture [460 x 616] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.4 4.6 0.173 0.181<br>B 2.5 2.7 0.098 0.106<br>D 2.5 2.75 0.098 0.108<br>E 0.45 0.7 0.017 0.027<br>F 0.75 1 0.030 0.039<br>F1 1.15 1.7 0.045 0.067<br>F2 1.15 1.7 0.045 0.067<br>G 4.95 5.2 0.195 0.204<br>G1 2.4 2.7 0.094 0.106<br>H 10 10.4 0.393 0.409<br>L2 16 0.630<br>L3 28.6 30.6 1.126 1.204<br>L4 9.8 10.6 .0385 0.417<br>L5 2.9 3.6 0.114 0.141<br>L6 15.9 16.4 0.626 0.645<br>L7 9 9.3 0.354 0.366<br>Ø 3 3.2 0.118 0.126<br>L3<br>L6<br>L7<br>1 2 3<br>L5<br>L2 L4<br>F1<br>F<br>G<br>F2<br>E<br>A<br>D<br>B<br>G1<br>H<br>**----- End of picture text -----**<br>


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**STP5NK60Z - STP5NK60ZFP- STD5NK60Z** 

## **TO-252 (DPAK) MECHANICAL DATA** 

**==> picture [395 x 511] intentionally omitted <==**

**----- Start of picture text -----**<br>
mm inch<br>DIM.<br>MIN. TYP. MAX. MIN. TYP. MAX.<br>A 2.20 2.40 0.087 0.094<br>A1 0.90 1.10 0.035 0.043<br>A2 0.03 0.23 0.001 0.009<br>B 0.64 0.90 0.025 0.035<br>B2 5.20 5.40 0.204 0.213<br>C 0.45 0.60 0.018 0.024<br>C2 0.48 0.60 0.019 0.024<br>D 6.00 6.20 0.236 0.244<br>E 6.40 6.60 0.252 0.260<br>G 4.40 4.60 0.173 0.181<br>H 9.35 10.10 0.368 0.398<br>L2 0.8 0.031<br>L4 0.60 1.00 0.024 0.039<br>V2 0 [o] 8 [o] 0 [o] 0 [o]<br>P032P_B<br>**----- End of picture text -----**<br>


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**STP5NK60Z - STP5NK60ZFP- STD5NK60Z** 

## **DPAK FOOTPRINT** 

All dimensions are in millimeters 

## **TAPE AND REEL SHIPMENT** 

**==> picture [394 x 360] intentionally omitted <==**

**----- Start of picture text -----**<br>
REEL MECHANICAL DATA<br>mm inch<br>Tt Accessat slot locationhole iT DIM.<br>MIN. MAX. MIN. MAX.<br>8 A 330 12.992<br>| Y rd | Cc i B 1.5 0.059<br>C 12.8 13.2 0.504 0.520<br>n{ of ZN tH<br>| pI / fT] | GD 20.216.4 18.4 0.7950.645 0.724<br>Full radius = S ape slot G measured N 50 1.968<br>tape start alee<br>2.5mm min. T 22.4 0.881<br>width<br>BASE QTY BULK QTY<br>TAPE MECHANICAL DATA<br>2500 2500<br>mm inch<br>DIM. $$ [-——_}<br>MIN. MAX. MIN. MAX.<br>A0 6.8 7 0.267 0.275<br>eeee B1B0 10.4 eeee 12.110.6 ee 0.409 eeee 0.4170.476 ee en(PaesYi! a,<br>D 1.5 1.6 0.059 0.063<br>es D1 fe 1.5 0.059 PP a)<br>E 1.65 1.85 0.065 0.073<br>F 7.4 7.6 0.291 0.299<br>ee ee ee ee ee only including — of cavity<br>K0 2.55 2.75 0.100 0.108<br>Ff fl ond TAL User Direction of Feed<br>ee P0 3.9 ee 4.1 ee 0.153 ee 0.161 ee<br>P1 7.9 8.1 0.311 0.319<br>P2 1.9 2.1 0.075 0.082<br>ee R 40 ee ee 1.574<br>W 15.7 16.3 0.618 0.641 DIRECTION, Bending radius<br>ee ee ee ee FEED<br>**----- End of picture text -----**<br>


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**STP5NK60Z - STP5NK60ZFP- STD5NK60Z** 

## **Table 9: Revision History** 

|**Table 9: Revision**|**History**||
|---|---|---|
|**Date**|**Revision**|**Description of Changes**|
|05-Apr-2005|1|First issue|
|29-Apr-2005|2|Modified value in Table 7.|
|06-Sep-2005|3|Inserted Ecopack indication|
|14-Oct-2005|4|Modified value on Table 1|
|28-Oct-2005|5|Tape & Reel info added|
|14-Nov-2005|6|Modified value on Table 6|
|15-Dec-2005|7|Various corrections|



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**STP5NK60Z - STP5NK60ZFP- STD5NK60Z** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

All other names are the property of their respective owners 

© 2005 STMicroelectronics - All Rights Reserved 

STMicroelectronics group of companies 

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp5nk60z/mosfet-n-ch-600v-5a-to-220/dp/2098330)
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