# Power MOSFET, N Channel, 950 V, 3.5 A, 2 ohm, TO-220AB, Through Hole
**URL**: https://novapart.co/products/STP5N95K5/power-mosfet-n-channel-950-v-35-a-2-ohm-to-220ab
**SKU**: STP5N95K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6750
**Stock**: 500+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:950V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 950V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.5A |
| Drain Source On State Resistance | 2ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2807302/)
## **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
**==> picture [196 x 162] intentionally omitted <==**
**----- Start of picture text -----**
TAB
2 3
1
DPAK
TAB
3
1 [2]
TO-220FP 3
2
TAB 1
TO-220
3
1 [2]
IPAK
**----- End of picture text -----**
## **Features**
|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**Ptot**|
|---|---|---|---|---|
|STD5N95K5|950 V|2.5 Ω|3.5 A|70 W|
|STF5N95K5||||25 W|
|STP5N95K5||||70 W|
|STU5N95K5||||70 W|
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
**Figure 1: Internal schematic diagram**
## **Applications**
- Switching applications
## **Description**
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD5N95K5|5N95K5|DPAK|Tape and reel|
|STF5N95K5||TO-220FP|Tube|
|STP5N95K5||TO-220||
|STU5N95K5||IPAK||
This is information on a product in full production.
January 2017
DocID024639 Rev 4
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_www.st.com_
**Contents**
**STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
|**Contents**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|**Contents**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1
DPAK (TO-252) type A2 package information................................. 11|
||4.2
DPAK (TO-252) type C2 package information ................................ 14|
||4.3
DPAK (TO-252) packing information ............................................... 17|
||4.4
TO-220FP package information ...................................................... 19|
||4.5
TO-220 type A package information ................................................ 21|
||4.6
IPAK (TO-251) type A package information .................................... 23|
|**5**|**Revision history ............................................................................ 25**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**DPAK, TO-220,**
**IPAK**|**TO-220FP**||
|VGS|Gate-source voltage|±30||V|
|ID|Drain current (continuous) at TC= 25 °C|3.5|3.5_(1)_|A|
|ID|Drain current (continuous) at TC= 100 °C|2.2|2.2_(1)_|A|
|IDM_(2)_|Drain currentpulsed|14||A|
|PTOT|Total dissipation at TC= 25 °C|70|25|W|
|dv/dt_(3)_|Peak diode recoveryvoltage slope|4.5||V/ns|
|dv/dt_(4)_|MOSFET dv/dt ruggedness|50||V/ns|
|VISO|Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)||2500|V|
|Tj|Operating junction temperature range|-55 to 150||°C|
|Tstg|Storage temperature range||||
## **Notes:**
- (1)Limited by maximum junction temperature.
- (2)Pulse width limited by safe operating area.
(3)ISD ≤ 3.5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS
(4)VDS ≤ 640 V
**Table 3: Thermal data**
||||**Value**|**Value**|**IPAK**|**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**DPAK**|**TO-220FP**|**TO-220**|||
|Rthj-case|Thermal resistance junction-case|1.47|5|1.47||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5||100|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|50||||°C/W|
## **Notes:**
(1)When mounted on 1 inch² FR-4, 2 Oz copper board
**Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive
(pulse width limited byTjmax)|1|A|
|EAS|Single pulse avalanche energy
(starting Tj = 25 °C, ID= IAR, VDD= 50 V)|70|mJ|
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**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
**Table 5: On/off-state**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|950|||V|
|IDSS|Zero gate voltage drain current|VDS= 950 V, VGS= 0 V|||1|µA|
|||VDS= 950 V, VGS= 0 V
TC= 125 °C_(1)_|||50|µA|
|IGSS|Gate bodyleakage current|VGS= ±20 V, VDS= 0 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|4|5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 1.5 A||2|2.5|Ω|
## **Notes:**
(1)Defined by design, not subject to production test.
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|220|-|pF|
|Coss|Output capacitance||-|17|-|pF|
|Crss|Reverse transfer capacitance||-|1|-|pF|
|Co(tr)_(1)_|Equivalent capacitance time
related|VGS= 0 V,
VDS= 0 to 760 V|-|30|-|pF|
|Co(er)_(2)_|Equivalent capacitance energy
related||-|11|-|pF|
|Rg|Intrinsicgate resistance|f = 1 MHz open drain|-|17|-|Ω|
|Qg|Totalgate charge|VDD= 760 V, ID= 3.5 A
VGS= 10 V
(see_Figure 19: "Test_
_circuit for gate charge_
_behavior"_)|-|12.5|-|nC|
|Qgs|Gate-source charge||-|2|-|nC|
|Qgd|Gate-drain charge||-|10|-|nC|
## **Notes:**
(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
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**Electrical characteristics**
## **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 475 V, ID= 1.75 A,
RG= 4.7 Ω
VGS= 10 V
(see_Figure 18: "Test circuit for_
_resistive load switching times"_
and_Figure 23: "Switching time_
_waveform"_)|-|12|-|ns|
|tr|Rise time||-|16|-|ns|
|td(off)|Turn-off delaytime||-|32|-|ns|
|tf|Fall time||-|25|-|ns|
**Table 8: Source-drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||3.5|A|
|ISDM|Source-drain current
(pulsed)||-||14|A|
|VSD_(1)_|Forward on voltage|ISD= 3.5 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recoverytime|ISD= 3.5 A, di/dt = 100 A/µs,
VDD= 60 V
(see_Figure 20: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|330||ns|
|Qrr|Reverse recoverycharge||-|2.2||µC|
|IRRM|Reverse recovery current||-|13||A|
|trr|Reverse recoverytime|ISD= 3.5 A, di/dt = 100 A/µs,
VDD= 60 V, Tj= 150 °C
(see_Figure 20: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|525||ns|
|Qrr|Reverse recoverycharge||-|3.2||µC|
|IRRM|Reverse recovery current||-|12||A|
## **Notes:**
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
**Table 9: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1 mA, ID= 0 A|30|-|-|V|
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area for DPAK and IPAK Figure 3: Thermal impedance for DPAK and IPAK**
**Figure 4: Safe operating area for TO-220FP**
**Figure 5: Thermal impedance for TO-220FP**
**Figure 6: Safe operating area for TO-220**
**==> picture [176 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 7: Thermal impedance for TO-220
CG20930
K
δ = 0.5
See SS cat
Cn
A
δ = 0.2
v
δ = 0.1
10 [-1]
LPje Zδ = tZ δ = tthth = k R = k pp/ / Ƭ Ƭ thie.
PL δ = 0.05
δ = 0.02
SINGLE PULSEδ = 0.01 LE tt pp ƬƬ ]
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp(s)
**----- End of picture text -----**
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**Electrical characteristics**
## **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
**Figure 8: Output characteristics**
**Figure 10: Gate charge vs gate-source voltage**
**Figure 9: Transfer characteristics**
**Figure 11: Static drain-source on-resistance**
**==> picture [45 x 17] intentionally omitted <==**
**----- Start of picture text -----**
VDD = 760 V
ID = 3.5 A
**----- End of picture text -----**
**Figure 12: Capacitance variations**
**Figure 13: Output capacitance stored energy**
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**Electrical characteristics**
**==> picture [208 x 20] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Normalized gate threshold voltage vs
temperature
**----- End of picture text -----**
**Figure 16: Normalized on-resistance vs temperature**
**Figure 15: Normalized V(BR)DSS vs temperature**
**Figure 17: Source-drain diode forward characteristics**
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 562] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18: Test circuit for resistive load Figure 19: Test circuit for gate charge
switching times behavior
Figure 20: Test circuit for inductive load Figure 21: Unclamped inductive load test
switching and diode recovery times circuit
Figure 22: Unclamped inductive waveform Figure 23: Switching time waveform
**----- End of picture text -----**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package information**
## **4.1 DPAK (TO-252) type A2 package information**
**Figure 24: DPAK (TO-252) type A2 package outline**
**==> picture [406 x 562] intentionally omitted <==**
**----- Start of picture text -----**
0068772_type-A2_rev21
**----- End of picture text -----**
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## **Package information**
|**formation**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|**formation**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|**formation**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|**formation**
**STD5N95K5, STF5N95K5, STP5N95K5,**
**STU5N95K5**|
|---|---|---|---|
|**Table 10: DPAK(TO-252) type A2 mechanical data**||||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|
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**Package information**
**Figure 25: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)**
**==> picture [407 x 274] intentionally omitted <==**
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**STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
**Package information**
## **4.2 DPAK (TO-252) type C2 package information**
**Figure 26: DPAK (TO-252) type C2 package outline**
**==> picture [408 x 372] intentionally omitted <==**
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**Package information**
## **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
**Table 11: DPAK (TO-252) type C2 mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1||2.90 REF||
|L2|0.90||1.25|
|L3||0.51 BSC||
|L4|0.60|0.80|1.00|
|L6||1.80 BSC||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|
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**Package information**
**Figure 27: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm)**
**==> picture [406 x 275] intentionally omitted <==**
**----- Start of picture text -----**
FP_0068772_21
**----- End of picture text -----**
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**Package information**
## **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
## **4.3 DPAK (TO-252) packing information**
**Figure 28: DPAK (TO-252) tape outline**
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**STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
**Package information**
## **Figure 29: DPAK (TO-252) reel outline**
**Table 12: DPAK (TO-252) tape and reel mechanical data**
|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||
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**Package information**
## **4.4 TO-220FP package information**
**Figure 30: TO-220FP package outline**
DocID024639 Rev 4 19/26 ~~a~~
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||||**STU5N95K5**|
|---|---|---|---|
||**Table 13: TO-220FPpackage mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
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**Package information**
## **4.5 TO-220 type A package information**
**Figure 31: TO-220 type A package outline**
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**Table 14: TO-220 type A mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
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**Package information**
## **4.6 IPAK (TO-251) type A package information**
**Figure 32: IPAK (TO-251) type A package outline**
**==> picture [406 x 462] intentionally omitted <==**
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**Package information STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
||||**STU5N95K5**|
|---|---|---|---|
|**Table 15: IPAK(TO-251) type Apackage mechanical**|||**data**|
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||
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**Revision history**
## **5 Revision history**
**Table 16: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-May-2013|1|First release.|
|18-Sep-2013|2|Document status promoted from preliminary to production data.
Added_Section 2.1: Electrical characteristics (curves)._
Updated DPAK mechanical data.|
|25-Sep-2013|3|Inserted_Figure 17: Source-drain diode forward characteristics._|
|04-Jan-2017|4|Added IPAK package.
Modified title, features and description on cover page.
Modified_Table 2: "Absolute maximum ratings"_,_Table 3: "Thermal_
_data"_,_Table 5: "On/off-state"._
Modified_Figure 11: "Static drain-source on-resistance"._
Updated_Section 4: "Package information"._
Minor text changes.|
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# **STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STP5N95K5/power-mosfet-n-channel-950-v-35-a-2-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp5n95k5/mosfet-n-ch-950v-3-5a-to-220ab/dp/2807302)
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