# Power MOSFET, N Channel, 60 V, 30 A, 0.022 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:497988/)

**URL**: https://novapart.co/products/STP55NE06FP/power-mosfet-n-channel-60-v-30-a-0022-ohm-to-220fp
**SKU**: STP55NE06FP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8600
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 35W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:497988/)

## **STP55NE06 STP55NE06FP** 

## N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET 

|**TYPE**<br>STP55NE06<br>STP55NE06FP<br>|**VDSS**<br>**RDS(on)**<br>**ID**<br>60 V<br>60 V<br>< 0.022 Ω<br>< 0.022 Ω<br>55 A<br>30 A<br>|
|---|---|



- I TYPICAL RDS(on) = 0.019 Ω 

- I EXCEPTIONAL dv/dt CAPABILITY 

- I 100% AVALANCHE TESTED 

- I LOW GATE CHARGE 100[o] C 

- I HIGH dv/dt CAPABILITY 

- I APPLICATION ORIENTED CHARACTERIZATION 

## **DESCRIPTION** 

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility. 

**==> picture [166 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 3<br>2 2<br>1 1<br>TO-220 TO-220FP<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

## **APPLICATIONS** 

- I DC MOTOR CONTROL 

- I DC-DC & DC-AC CONVERTERS 

- I SYNCHRONOUS RECTIFICATION 

**ABSOLUTE MAXIMUM RATINGS** 

**Symbol Parameter Value Unit STP55NE06 STP55NE06FP** a a VDS Drain-source Voltage (VGS = 0) 60 V a VDGR Drain- gate Voltage (RGS = 20 kΩ) 60 V a VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25[o] C 55 30 A Rs ID Drain Current (continuous) at Tc = 100[o] C 39 21 A Rsa IDM(•) Drain Current (pulsed) 220 220 A a Ptot Total Dissipation at Tc = 25[o] C 130 35 W a Derating Factor 0.96 0.27 W/[o] C a VISO Insulation Withstand Voltage (DC)  2000 V a dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 oC Rs Tj CR Max. Operating Junction Temperature 175 oC ( Rs •) Pulse width limited by safe operating area (1) ISD ≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX January 1998 1/9 

1/9 

## **STP55NE06/FP** 

**THERMAL DATA** 

**TO-220 TO-220FP** Rthj-case Thermal Resistance Junction-case Max 1.15 4.28 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W R thc-sink Thermal Resistance Case-sink Typ 0.5 oC/W Tl Maximum Lead Temperature For Soldering Purpose 300 oC —a **AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit** IAR Avalanche Current, Repetitive or Not-Repetitive 55 A (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy 200 mJ ——e (starting Tj = 25[o] C, ID = IAR , VDD = 25 V) **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) OFF 

**Symbol Parameter Test Conditions Min. Typ. Max. Unit** V(BR)DSS Drain-source ID = 250 µA VGS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tc = 125 10 µA oC IGSS Gate-body Leakage VGS = ± 20 V ± 100 nA Seeseeeeseee Current (VDS = 0) ON (∗) **Symbol Parameter Test Conditions Min. Typ. Max. Unit** V GS(th) Gate Threshold VDS = VGS ID = 250 µA 2 3 4 V Voltage RDS(on) Static Drain-source On VGS = 10V ID = 27.5 A 0.019 0.022 Ω Resistance ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 55 A VGS = 10 V te DYNAMIC **Symbol Parameter Test Conditions Min. Typ. Max. Unit** g fs (∗) Forward VDS > ID(on) x RDS(on)max ID =27.5 A 25 35 S Transconductance C iss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 3050 4000 pF C oss Output Capacitance 380 500 pF C rss Reverse Transfer 100 130 pF pe Capacitance 

2/9 

**STP55NE06/FP** 

## **ELECTRICAL CHARACTERISTICS** (continued) SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|td(on)|Turn-on Time|VDD = 30 V|ID = 27.5 A||30|40|ns|
|tr|Rise Time|RG=4.7 W|VGS = 10 V||120|160|ns|
|||(see test circuit, figure 3)||||||
|Qg|Total Gate Charge|VDD = 48 V|ID = 55 A<br>VGS = 10 V||80|105|nC|
|Qgs|Gate-Source Charge||||13||nC|
|Qgd|Gate-Drain Charge||||25||nC|



## SWITCHING OFF 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|tr(Voff)|Off-voltage Rise Time|VDD = 48 V<br>ID = 55 A||20|30|ns|
|tf|Fall Time|RG=4.7Ω<br>VGS = 10 V||50|70|ns|
|tc|Cross-over Time|(see test circuit, figure 5)||75|100|ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|ISD|Source-drain Current|||||55|A|
|ISDM(•)|Source-drain Current|||||220|A|
||(pulsed)|||||||
|VSD (∗)|Forward On Voltage|ISD = 60 A|VGS = 0|||1.5|V|
|trr|Reverse Recovery|ISD = 55 A|di/dt = 100 A/µs||110||ns|
||Time|VDD = 30 V|Tj = 150 oC|||||
|Qrr|Reverse Recovery|(see test circuit, figure 5)|||430||µC|
||Charge|||||||
|IRRM|Reverse Recovery||||7.5||A|
||Current|||||||



(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 

(•) Pulse width limited by safe operating area 

## Safe Operating Area for TO-220 

## Safe Operating Area for TO-220FP 

3/9 ; PC 

## **STP55NE06/FP** 

Thermal Impedance for TO-220 

Output Characteristics 

Transconductance 

Thermal Impedance forTO-220FP 

Transfer Characteristics 

Static Drain-source On Resistance 

4/9 n°) 

**STP55NE06/FP** 

Gate Charge vs Gate-source Voltage 

Normalized Gate Threshold Voltage vs Temperature 

Capacitance Variations 

Normalized On Resistance vs Temperature 

Source-drain Diode Forward Characteristics 

5/9 

## **STP55NE06/FP** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

**Fig. 2:** Unclamped Inductive Waveform 

**Fig. 3:** Switching Times Test Circuits For Resistive Load 

**Fig. 4:** Gate Charge test Circuit 

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

6/9 SSS ky7 $¢s-THOMSONMICROELECTRONICS —__—_——————EESSSS—CSCFSFS<zO 

**STP55NE06/FP** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**||**mm**|||**inch**||
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|D1||1.27|||0.050||
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.203|
|G1|2.4||2.7|0.094||0.106|
|H2|10.0||10.40|0.393||0.409|
|L2||16.4|||0.645||
|L4|13.0||14.0|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.2||6.6|0.244||0.260|
|L9<br>3.5<br>3.93<br>0.137<br>0.154<br>DIA.<br>3.75<br>3.85<br>0.147<br>0.151<br>A<br>C<br>D<br>E<br>D1<br>oh|||||||
||||L2||||
|||F1<br>ant|||G<br>G1|H2|
|||L6<br>L7<br>Dia.<br>L5<br>L4<br>L9<br>F2<br>a|||F|P011C|



7/9 

**STP55NE06/FP** 

## **TO-220FP MECHANICAL DATA** 

|**DIM.**||**mm**|||**inch**||
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.4||4.6|0.173||0.181|
|B|2.5||2.7|0.098||0.106|
|D|2.5||2.75|0.098||0.108|
|E|0.45||0.7|0.017||0.027|
|F|0.75||1|0.030||0.039|
|F1|1.15||1.7|0.045||0.067|
|F2|1.15||1.7|0.045||0.067|
|G|4.95||5.2|0.195||0.204|
|G1|2.4||2.7|0.094||0.106|
|H|10||10.4|0.393||0.409|
|L2||16|||0.630||
|L3|28.6||30.6|1.126||1.204|
|L4|9.8||10.6|0.385||0.417|
|L6|15.9||16.4|0.626||0.645|
|L7<br>9<br>9.3<br>0.354<br>0.366<br>Ø<br>3<br>3.2<br>0.118<br>0.126<br>**L2**<br>**A**<br>**B**<br>**D**<br>**E**<br>**H**<br>**G**<br>**L6**<br>**¯**<br>**F**<br>**L3**<br>**G1**<br>**1 2 3**<br>**F2**<br>**F1**<br>**L7**<br>**L4**<br>8/9<br>—<br>——<br>=a<br>fa<br>aL|||||||



**STP55NE06/FP** 

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress written approval of SGS-THOMSON Microelectonics. 

- 1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved 

SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta- Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 

. . . 

<< 

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