# Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:1291985/)

**URL**: https://novapart.co/products/STP4NK60ZFP/power-mosfet-n-channel-600-v-4-a-2-ohm-to-220fp
**SKU**: STP4NK60ZFP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7140
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 2ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1291985/)

## **STP4NK60Z, STP4NK60ZFP** 

N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 and TO-220FP packages 

**Datasheet** - **production data** 

## **Features** 

**==> picture [152 x 71] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3 3<br>2 2<br>1 1<br>TO-220 TO-220FP<br>**----- End of picture text -----**<br>


|**Order codes**|**VDS**|**RDS(on) max.**|**PTOT**|**ID**|
|---|---|---|---|---|
|STP4NK60Z|600 V|2Ω|70 W|4 A|
|STP4NK60ZFP|||||



- 100% avalanche tested 

- Very low intrinsic capacitances 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

**==> picture [171 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STP4NK60Z|P4NK60Z|TO-220|Tube|
|STP4NK60ZFP|P4NK60ZFP|TO-220FP||



_www.st.com_ 

January 2014 

DocID025020 Rev 2 

1/16 

This is information on a product in full production. 

**Contents** 

**STP4NK60Z, STP4NK60ZFP** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220**|**TO-220FP**||
|VDS|Drain-source voltage|600||V|
|VGS|Gate- source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25 °C|4|4(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|2.5|2.5(1)|A|
|IDM<br>(2)|Drain current (pulsed)|16|16(1)|A|
|PTOT|Total dissipation at TC= 25 °C|70|25|W|
||Derating factor|0.56|0.2|W/°C|
|ESD|Gate-source human body model (C=100 pF, R=1.5<br>kΩ)|3||kV|
|dv/dt<br>(3)|Peak diode recovery voltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (RMS) from all three<br>leads to external heat sink (t=1 s; TC=25 °C)||2500|V|
|Tstg|Storage temperature|-55 to 150||°C|
|Tj|Max operating junction temperature|150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area 

3. ISD ≤  4 A, di/dt  ≤  200 A/μs, VDD ≤  V(BR)DSS, TJ ≤  TJMAX. 

## **Table 3. Thermal data** 

||**Table 3. Thermal data**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|1.79|5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5||°C/W|



**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj max)|4|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAR, VDD= 50 V)|120|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown  voltage|ID=1 mA|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V<br>VDS= 600 V, TC= 125 °C|||1<br>50|μA<br>μA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|μA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 μA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 2 A||1.7|2|Ω|



**Table 6. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs<br>(1)|Forward transconductance|VDS= 15 V, ID= 2 A|-|3||S|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|510||pF|
|Coss|Output capacitance||-|67||pF|
|Crss|Reverse transfer capacitance||-|13||pF|
|Coss eq.<br>(2)|Equivalent output<br>capacitance|VDS=0, VDS= 0 to 480 V|-|38.5||pF|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 2 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_)|-|12||ns|
|tr|Rise time||-|9.5||ns|
|td(off)|Turn-off delay time||-|29||ns|
|tf|Fall time||-|16.5||ns|
|tr(Voff)|Off-voltage rise time|VDD= 480 V, ID= 4 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 19_)|-|12||ns|
|tr|Fall time||-|12||ns|
|tc|Cross-over time||-|19.5||ns|
|Qg|Total gate charge|VDD= 480 V, ID= 4 A,<br>VGS= 10 V<br>(see_Figure 18_)|-|18.8|26|nC|
|Qgs|Gate-source charge||-|3.8||nC|
|Qgd|Gate-drain charge||-|9.8||nC|



1. Pulsed: pulse duration=300μs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||4|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||16|A|
|VSD<br>(2)|Forward on voltage|ISD= 4 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 4 A, di/dt = 100 A/μs<br>VDD= 24 V, Tj = 150 °C<br>(see_Figure 19_)|-|400||ns|
|Qrr|Reverse recovery charge||-|1700||nC|
|IRRM|Reverse recovery current||-|8.5||A|



1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 

2. Pulse width limited by safe operating area 

**Table 8. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID=0|30|-|-|V|



The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220** 

**==> picture [171 x 167] intentionally omitted <==**

## **Figure 3. Thermal impedance for TO-220** 

**==> picture [174 x 169] intentionally omitted <==**

**Figure 4. Safe operating area for TO-220FP** 

**==> picture [170 x 167] intentionally omitted <==**

## **Figure 5. Thermal impedance for TO-220FP** 

**==> picture [171 x 166] intentionally omitted <==**

**Figure 6. Output characteristics** 

**==> picture [179 x 168] intentionally omitted <==**

**Figure 7. Transfer characteristics** 

**==> picture [170 x 168] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 8. Transconductance** 

**==> picture [174 x 167] intentionally omitted <==**

**Figure 10. Gate charge vs gate-source voltage** 

**==> picture [181 x 169] intentionally omitted <==**

**Figure 12. Normalized gate threshold voltage vs temperature** 

**==> picture [185 x 169] intentionally omitted <==**

**Figure 9. Static drain-source on-resistance** 

**==> picture [179 x 169] intentionally omitted <==**

**Figure 11. Capacitance variations** 

**==> picture [182 x 169] intentionally omitted <==**

**Figure 13. Normalized RDS(on) vs temperature** 

**==> picture [185 x 168] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristic** 

**==> picture [181 x 168] intentionally omitted <==**

**Figure 15. Normalized VDS vs temperature** 

**==> picture [189 x 169] intentionally omitted <==**

## **Figure 16. Avalanche energy vs temperature** 

**==> picture [183 x 169] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for resistive load** 

**Figure 18. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **Figure 23. TO-220 type A drawing** 

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**Package mechanical data** 

**Table 9. TO-220 type A mechanical data** 

||**Table 9. TO-220 type A mechanical data**|**Table 9. TO-220 type A mechanical data**|**Table 9. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Jul-2013|1|First release. Part numbers previously included in datasheet<br>DocID8882|
|22-Jan-2014|2|– Modified: figure in cover page<br>– Minor text changes|



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## Links

- [View this product on Novapart](https://novapart.co/products/STP4NK60ZFP/power-mosfet-n-channel-600-v-4-a-2-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp4nk60zfp/mosfet-n-to-220fp/dp/1291985)
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