# Power MOSFET, N Channel, 525 V, 2.5 A, 2.1 ohm, TO-220FP, Through Hole ![Product image](https://novapart.co/image/farnell:2098324/) **URL**: https://novapart.co/products/STP4N52K3/power-mosfet-n-channel-525-v-25-a-21-ohm-to-220fp **SKU**: STP4N52K3 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4480 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:525V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; P ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 20W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220FP | | Drain Source Voltage Vds | 525V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2.5A | | Drain Source On State Resistance | 2.1ohm | | Gate Source Threshold Voltage Max | 3.75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2098324/) ## **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ## **Datasheet — production data** ## **Features** |**Order codes**|**VDSS**|**RDS(on)**
**max**|**ID**|**Pw**| |---|---|---|---|---| |STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3|525 V|< 2.6Ω|2.5 A
2.5 A
2.5 A(1)
2.5 A|45 W
20 W
45 W
45 W| 1. Limited by package - 100% avalanche tested - Extremely high dv/dt capability **==> picture [172 x 155] intentionally omitted <==** **----- Start of picture text -----**
3
1
DPAK 3
2
1
TO-220FP
3
3 2
2 1
1
TO-220 IPAK
**----- End of picture text -----**
- Gate charge minimized - Very low intrinsic capacitance - Improved diode reverse recovery characteristics - Zener-protected ## **Application** - Switching applications ## **Description** These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. ## **Figure 1. Internal schematic diagram** **==> picture [220 x 171] intentionally omitted <==** **----- Start of picture text -----**
D(2)
G(1)
S(3)
AM01476v1
**----- End of picture text -----**
**Table 1. Device summary** |**Order codes**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STD4N52K3|4N52K3|DPAK|Tape and reel| |STF4N52K3|4N52K3|TO-220FP|Tube| |STP4N52K3|4N52K3|TO-220|Tube| |STU4N52K3|4N52K3|IPAK|Tube| February 2013 Doc ID 18206 Rev 2 1/21 This is information on a product in full production. _www.st.com_ |**Contents**|**STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**| |**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**| 2/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||||**Unit**| |||**TO-220 **|**DPAK**|**IPAK**|**TO-220FP**|| |VDS|Drain-source voltage (VGS= 0)|525||||V| |VGS|Gate- source voltage|± 30||||V| |ID|Drain current (continuous) at TC= 25 °C|2.5|||2.5(1)|A| |ID|Drain current (continuous) at TC= 100 °C|2|||2(1)|A| |IDM
(2)|Drain current (pulsed)|10|||10(1)|A| |PTOT|Total dissipation at TC= 25 °C|45|||20|W| |IAR|Avalanche current, repetitive or not-
repetitive (pulse width limited by Tjmax)|1.3||||A| |EAS|Single pulse avalanche energy
(starting Tj= 25°C, ID= IAR, VDD= 50V)|110||||mJ| |dv/dt(3)|Peak diode recovery voltage slope|12||||V/ns| |VISO|Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC= 25 °C)||||2500|V| |Tstg|Storage temperature|-55 to 150||||°C| |Tj|Max. operating junction temperature|150||||°C| 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5 A, di/dt = 400 A/μs, peak VDD ≤ V(BR)DSS, VDD = 80% V(BR)DSS. ## **Table 3. Thermal data** |**Table 3.**|**Thermal data**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||||**Unit**| |||**TO-220 **|**DPAK**|**IPAK**|**TO-220FP**|| |Rthj-case|Thermal resistance junction-case max|2.78|||6.25|°C/W| |Rthj-pcb
(1)|Thermal resistance junction-pcb max||50|||°C/W| |Rthj-amb|Thermal resistance junction-ambient max|62.5||100|62.5|°C/W| |Tl|Maximum lead temperature for soldering
purpose|300||300||°C| 1. When mounted on 1inch sq FR-4 board, 2 oz Cu Doc ID 18206 Rev 2 3/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical characteristics** ## **2 Electrical characteristics** (TC = 25 °C unless otherwise specified) ## **Table 4. On /off states** |**Table 4.**|**On /off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0|525|||V| |IDSS|Zero gate voltage
drain current (VGS= 0)|VDS= 525 V
VDS= 525 V, TC=125 °C|||1
50|μA
μA| |IGSS|Gate-body leakage
current (VDS= 0)|VGS= ± 20 V|||± 10|μA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 μA|3|3.75|4.5|V| |RDS(on|Static drain-source on-
resistance|VGS= 10 V, ID= 1.25 A||2.1|2.6|Ω| ## **Table 5. Dynamic** |**Table 5.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0|-|334
28
5|-|pF
pF
pF| |Coss(eq)
(1)|Equivalent output
capacitance time
related|VDS= 0 to 420 V, VGS= 0|-|20|-|pF| |RG|Intrinsic gate
resistance|f = 1 MHz open drain|-|4|-|Ω| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 400 V, ID= 2.5 A,
VGS= 10 V
(see_Figure 19_)|-|11
2
7|-|nC
nC
nC| 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. ## **Table 6. Switching times** |**Table 6.**|**Switching times**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off-delay time
Fall time|VDD= 260 V, ID= 1.25 A,
RG= 4.7Ω,VGS= 10 V
(see_Figure 18_)|-|8
7
21
14|-|ns
ns
ns
ns| 4/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical characteristics** ## **Table 7. Source drain diode** |**Table 7.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ISD
ISDM (1)|Source-drain current
Source-drain current (pulsed)||-||2.5
10|A
A| |VSD (2)|Forward on voltage|ISD= 2.5 A, VGS= 0|-||1.6|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 2.5 A, di/dt = 100 A/μs
VDD= 60 V (see_Figure 23_)|-|173
778
9||ns
nC
A| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 2.5 A, di/dt = 100 A/μs
VDD= 60 V, Tj= 150 °C
(see_Figure 23_)|-|196
941
10||ns
nC
A| 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5% ## **Table 8. Gate-source Zener diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |BVGSO
(1)|Gate-source breakdown
voltage|Igs=± 1 mA (open drain)|30|-||V| 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Doc ID 18206 Rev 2 5/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM08637v1
(A) Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1
1ms
10ms
0.1
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
**==> picture [175 x 169] intentionally omitted <==** **Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP** **==> picture [462 x 371] intentionally omitted <==** **----- Start of picture text -----**
ID AM08638v1
(A) Tj=150°C
Tc=25°C
Single pulse
10
10µs
1 100µs
1ms
10ms
0.1
0.01
0.1 1 10 100 VDS(V)
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
ID AM08639v1
(A) Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1
1ms
10ms
0.1
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
6/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical characteristics** ## **Figure 8. Output characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM08640v1
ID
(A)
6 VGS=10V
7V
5
4
6V
3
2
1
5V
0
0 5 10 15 20 25 VDS(V)
**----- End of picture text -----**
## **Figure 10. Normalized BVDSS vs temperature** ## **Figure 9. Transfer characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM08641v1
ID(A)
4.5 VGS=15V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 VGS(V)
**----- End of picture text -----**
## **Figure 11. Static drain-source on-resistance** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
BVDSS AM08648v1 RDS(on) AM08643v1
(norm) (Ω)
1.10 2.35 VGS=10V
1.05 2.25
1.00 2.15
0.95 2.05
0.90 1.95
0.85 1.85
0.80 1.75
-75 -25 25 75 125 TJ(°C) 0 0.5 1.0 1.5 2.0 2.5 ID(A)
**----- End of picture text -----**
## **Figure 12. Capacitance variations** ## **Figure 13. Gate charge vs gate-source voltage** **==> picture [462 x 177] intentionally omitted <==** **----- Start of picture text -----**
C AM00893v1 VGS AM08642v1
(pF) (V) VGS
12 VDS VDD=420V 400
Ciss ID=2.5A
350
10
100 300
8
250
6 200
Coss
10 150
4
Crss 100
2
50
1 0 0
0.1 1 10 100 VDS(V) 0 2 4 6 8 10 12 Qg(nC)
**----- End of picture text -----**
Doc ID 18206 Rev 2 7/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs vs temperature temperature** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM08646v1 RDS(on) AM08647v1
(norm) (norm)
1.1
2.5
1.0
2.0
0.9
1.5
0.8
1.0
0.7
0.6 0.5
0.5 0
-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
## **Figure 16. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VSD AM08649v1
(V)
1.0 TJ=-50°C
0.9
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0.4
0 0.5 1 1.5 2 2.5 ISD(A)
**----- End of picture text -----**
**Figure 17. Maximum avalanche energy vs starting Tj** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM08650v1
EAS (mJ)
120
ID=2.5 A
VDD=50 V
100
80
60
40
20
0
0 20 40 60 80 100 120 140 TJ(°C)
**----- End of picture text -----**
8/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Test circuits** ## **3 Test circuits** **Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit resistive load** **==> picture [462 x 195] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test
switching and diode recovery times circuit
**----- End of picture text -----**
**==> picture [462 x 346] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100μH VD 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
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Doc ID 18206 Rev 2 9/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. **Table 9. DPAK (TO-252) mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|2.20||2.40| |A1|0.90||1.10| |A2|0.03||0.23| |b|0.64||0.90| |b4|5.20||5.40| |c|0.45||0.60| |c2|0.48||0.60| |D|6.00||6.20| |D1||5.10|| |E|6.40||6.60| |E1||4.70|| |e||2.28|| |e1|4.40||4.60| |H|9.35||10.10| |L|1||| |L1||2.80|| |L2||0.80|| |L4|0.60||1| |R||0.20|| |V2|0°||8°| 10/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** ## **Figure 24. DPAK (TO-252) drawing** **==> picture [405 x 284] intentionally omitted <==** **----- Start of picture text -----**
0068772_I
**----- End of picture text -----**
## **Figure 25. DPAK footprint[(a)]** **==> picture [405 x 151] intentionally omitted <==** **----- Start of picture text -----**
6.7 1.8 3
1.6
2.3
6.7
2.3
1.6
AM08850v1
**----- End of picture text -----**
a. All dimensions are in millimeters Doc ID 18206 Rev 2 11/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** **Table 10. TO-220FP mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.4||4.6| |B|2.5||2.7| |D|2.5||2.75| |E|0.45||0.7| |F|0.75||1| |F1|1.15||1.70| |F2|1.15||1.70| |G|4.95||5.2| |G1|2.4||2.7| |H|10||10.4| |L2||16|| |L3|28.6||30.6| |L4|9.8||10.6| |L5|2.9||3.6| |L6|15.9||16.4| |L7|9||9.3| |Dia|3||3.2| 12/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** ## **Figure 26. TO-220FP drawing** **==> picture [405 x 577] intentionally omitted <==** **----- Start of picture text -----**
7012510_Rev_K_B
**----- End of picture text -----**
Doc ID 18206 Rev 2 13/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** ## **Table 11. TO-220 type A mechanical data** |**Dim.**|**mm**|**mm**|**mm**| |---|---|---|---| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| 14/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** **Figure 27. TO-220 type A drawing** **==> picture [405 x 383] intentionally omitted <==** **----- Start of picture text -----**
0015988_typeA_Rev_S
**----- End of picture text -----**
Doc ID 18206 Rev 2 15/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** **Table 12. IPAK (TO-251) mechanical data** |**DIM**|**mm.**|**mm.**|**mm.**| |---|---|---|---| ||**min.**|**typ.**|**max.**| |A|2.20||2.40| |A1|0.90||1.10| |b|0.64||0.90| |b2|||0.95| |b4|5.20||5.40| |B5||0.30|| |c|0.45||0.60| |c2|0.48||0.60| |D|6.00||6.20| |E|6.40||6.60| |e||2.28|| |e1|4.40||4.60| |H||16.10|| |L|9.00||9.40| |L1|0.80||1.20| |L2||0.80|1.00| |V1||10°|| 16/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Package mechanical data** ## **Figure 28. IPAK (TO-251) drawing** **==> picture [405 x 456] intentionally omitted <==** **----- Start of picture text -----**
0068771_J
**----- End of picture text -----**
Doc ID 18206 Rev 2 17/21 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Packaging mechanical data** ## **5 Packaging mechanical data** **Table 13. DPAK (TO-252) tape and reel mechanical data** ||**Tape**|**Tape**||**Reel**|**Reel**| |---|---|---|---|---|---| |**Dim.**|**mm**||**Dim.**|**mm**|| ||**Min.**|**Max.**||**Min.**|**Max.**| |A0|6.8|7|A||330| |B0|10.4|10.6|B|1.5|| |B1||12.1|C|12.8|13.2| |D|1.5|1.6|D|20.2|| |D1|1.5||G|16.4|18.4| |E|1.65|1.85|N|50|| |F|7.4|7.6|T||22.4| |K0|2.55|2.75|||| |P0|3.9|4.1||Base qty.|2500| |P1|7.9|8.1||Bulk qty.|2500| |P2|1.9|2.1|||| |R|40||||| |T|0.25|0.35|||| |W|15.7|16.3|||| 18/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Packaging mechanical data** **==> picture [395 x 327] intentionally omitted <==** **----- Start of picture text -----**
Figure 29. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
Top cover P0 D P2
T tape
o i e ; —4 |
| / O0O0 G8G 0CO0 8 G00 E
F
K0 W
B1 B0
on e |||| e |] ®]]
ena olo l o i a i c te
| Tl LT
For machine ref. only A0 P1 D1
including draft and
radii concentric around B0 —_—>
User direction of feed
R
S e ca l e alice
a Bending radius
ad
User direction of feed
**----- End of picture text -----**
**==> picture [39 x 6] intentionally omitted <==** **----- Start of picture text -----**
AM08852v1
**----- End of picture text -----**
## **Figure 30. Reel for DPAK (TO-252)** **==> picture [377 x 249] intentionally omitted <==** **----- Start of picture text -----**
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius Tape slot G measured at hub
in core for
tape start 25 mm min.
width
AM08851v2
**----- End of picture text -----**
19/21 Doc ID 18206 Rev 2 **STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3** **Revision history** ## **6 Revision history** **Table 14. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |09-Nov-2010|1|First release.| |19-Feb-2013|2|Updated packages order in_Table 1: Device summary_.
Updated_Table 4: Package mechanical data_and_Table 5: Packaging_
_mechanical data_.
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