# Power MOSFET, N Channel, 300 V, 42 A, 0.063 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807221/)

**URL**: https://novapart.co/products/STP46NF30/power-mosfet-n-channel-300-v-42-a-0063-ohm-to
**SKU**: STP46NF30
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3000
**Stock**: 500+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.063ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807221/)

**STB46NF30, STP46NF30, STW46NF30** N-channel 300 V, 0.063 Ω typ., 42 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages 

Datasheet - production data 

**==> picture [198 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>D PAK2<br>TAB<br>3<br>3<br>TO-220 2<br>1 [2] TO-247 1<br>**----- End of picture text -----**<br>


## **Features** 

|**Order code**|**VDSS**|**RDS(on) max.**|**ID**|**PW**|
|---|---|---|---|---|
|STB46NF30|300 V|< 0.075 Ω|42 A|300 W|
|STP46NF30|||||
|STW46NF30|||||



- Exceptional dv/dt capability 

- 100% avalanche tested 

- Low gate charge 

## **Applications** 

**Figure 1: Internal schematic diagram** 

- Switching applications 

**==> picture [60 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


## **Description** 

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

**==> picture [46 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01475v1_Tab<br>**----- End of picture text -----**<br>


**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB46NF30|46NF30|D²PAK|Tape and reel|
|STP46NF30||TO-220|Tube|
|STW46NF30||TO-247||



August 2016 

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1/20 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STB46NF30, STP46NF30, STW46NF30**|**Contents**<br>**STB46NF30, STP46NF30, STW46NF30**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>D²PAK (TO-263) package information ............................................ 10|
||4.2<br>D²PAK (TO-263) packing information .............................................. 13|
||4.3<br>TO-220 type A package information ................................................ 15|
||4.4<br>TO-247 package information ........................................................... 17|
|**5**|**Revision history ............................................................................ 19**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|300|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at TC= 25 °C|42|A|
|ID|Drain current (continuous) at TC= 100 °C|27|A|
|IDM_(1)_|Drain current (pulsed)|168|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
||Deratingfactor|2|W/°C|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|10|V/ns|
|TJ|Operating junction temperature range|- 55 to 175|°C|
|Tstg|Storage temperature range|||



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)ISD ≤ 34 A, di/dt ≤ 200 A/μs, VDD = 80% V(BR)DSS,VDS peak < V(BR)DSS 

**Table 3: Thermal data** 

|||**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**D²PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistancejunction-case|0.5|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|30|62.5|50|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|30|||°C/W|
|TJ|Maximum lead temperature for soldering purpose|300|||°C|



## **Notes:** 

(1)When mounted on FR-4 board of 1inch², 2oz Cu. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR_(1)_|Avalanche current, repetitive or not repetitive (pulse<br>width limited by Tjmax)|26|A|
|EAS|Single pulse avalanche energy (starting Tj = 25 °C,<br>ID= IAR, VDD= 50 V)|290|mJ|



## **Notes:** 

(1)Pulse width limited by Tjmax 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 5: On/off-state** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|300|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 300 V|||1|µA|
|||VGS= 0 V, VDS= 300 V<br>TC= 125 °C_(1)_|||10|µA|
|IGSS|Gate bodyleakage current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2|3|4|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 17 A||0.063|0.075|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0<br>V|-|3200|-|pF|
|Coss|Output capacitance||-|442|-|pF|
|Crss|Reverse transfer<br>capacitance||-|57|-|pF|
|td(on)|Turn-on delaytime|VDD= 150 V, ID= 17 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 16: "Test circuit for_<br>_resistive load switching times"_)|-|25|-|ns|
|tr|Rise time||-|38|-|ns|
|td(off)|Turn-off delaytime||-|80|-|ns|
|tf|Fall time||-|46|-|ns|
|Qg|Totalgate charge|VDD= 240 V, ID= 34 A<br>VGS= 10 V<br>(see_Figure 17: "Test circuit for_<br>_gate charge behavior"_)|-|90|-|nC|
|Qgs|Gate-source charge||-|16|-|nC|
|Qgd|Gate-drain charge||-|40|-|nC|



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**Electrical characteristics** 

||**Table 7: Source-drain diode**|**Table 7: Source-drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||34|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||136|A|
|VSD_(2)_|Forward on voltage|ISD= 34 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 34 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(see_Figure 18: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|215||ns|
|Qrr|Reverrse recovery<br>charge||-|1.7||µC|
|IRRM|Reverse recovery current||-|16||A|
|trr|Reverse recovery time|ISD= 34 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|252||ns|
|Qrr|Reverse recovery charge||-|2.3||µC|
|IRRM|Reverse recovery current||-|19||A|



## **Notes:** 

(1)Pulse width limited by safe operating area 

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.2 Electrical characteristics (curves)** 

**==> picture [400 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area for D²PAK and  Figure 3: Thermal impedance for D²PAK and<br>TO-220  TO-220<br>**----- End of picture text -----**<br>


**Figure 4: Safe operating area for TO-247** 

**Figure 5: Thermal impedance for TO-247** 

**==> picture [350 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Output characteristics  Figure 7: Transfer characteristics<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **STB46NF30, STP46NF30, STW46NF30** 

**==> picture [400 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8: Gate charge vs gate-source voltage  Figure 9: Static drain-source on-resistance<br>Ves AM 03373v1 Ros(on) AMO 03371v1<br>W<br>a SCT<br>**----- End of picture text -----**<br>


**Figure 10: Capacitance variations** 

**Figure 11: Normalized gate threshold voltage vs temperature** 

**Figure 12: Normalized on-resistance vs temperature** 

**Figure 13: Normalized V(BR)DSS vs temperature** 

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## **Electrical characteristics** 

**Figure 14: Avalanche energy vs starting Tj** 

**Figure 15: Source-drain diode forward vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16: Test circuit for resistive load  Figure 17: Test circuit for gate charge<br>switching times  behavior<br>Figure 18: Test circuit for inductive load  Figure 19: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>**----- End of picture text -----**<br>


**==> picture [403 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20: Unclamped inductive waveform  Figure 21: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 D²PAK (TO-263) package information** 

**Figure 22: D²PAK (TO-263) type A package outline** 

**==> picture [407 x 497] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_A_rev22<br>**----- End of picture text -----**<br>


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**Package information** 

|**0, STP46NF30, STW46NF30**<br>**Package information**|**0, STP46NF30, STW46NF30**<br>**Package information**|**0, STP46NF30, STW46NF30**<br>**Package information**|**0, STP46NF30, STW46NF30**<br>**Package information**|
|---|---|---|---|
|**Table 8: D²PAK(TO-263) type Apackage mechanical data**||||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package information** 

**Figure 23: D²PAK (TO-263) recommended footprint (dimensions are in mm)** 

**==> picture [407 x 344] intentionally omitted <==**

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**Package information** 

## **4.2 D²PAK (TO-263) packing information** 

**Figure 24: Tape outline** 

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**Package information** 

**Figure 25: Reel outline** 

**Table 9: D²PAK tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Package information** 

## **4.3 TO-220 type A package information** 

**Figure 26: TO-220 type A package outline** 

DocID018493 Rev 2 15/20 ~~a~~ 

**Package information STB46NF30, STP46NF30, STW46NF30** 

**Table 10: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Package information** 

## **4.4 TO-247 package information** 

**Figure 27: TO-247 package outline** 

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## **Package information STB46NF30, STP46NF30, STW46NF30** 

**Table 11: TO-247 package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

||**Table 12: Document revision history**|**Table 12: Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|28-Sep-2012|1|First release.|
|24-Aug-2016|2|Modified:_Table 7: "Source-drain diode"_<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

20/20 

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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp46nf30/mosfet-n-ch-300v-42a-to-220ab/dp/2807221)
---

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