# Power MOSFET, N Channel, 60 V, 26 A, 0.028 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:9935630/)

**URL**: https://novapart.co/products/STP45NF06/power-mosfet-n-channel-60-v-26-a-0028-ohm-to-220ab
**SKU**: STP45NF06
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6070
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STP |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 26A |
| Drain Source On State Resistance | 0.028ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935630/)

## **STP45NF06** 

N-channel 60 V, 0.22 Ω typ., 38 A, STripFET™ II Power MOSFET in a TO-220 package 

**Datasheet** − **production data** 

## **Features** 

|**Order code**|**VDS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STP45NF06|60 V|0.028Ω|38 A|



- Typical RDS(on) = 0.022 Ω 

- Exceptional dv/dt capability 

- 100% avalanche tested 

- Standard threshold drive 

**==> picture [70 x 78] intentionally omitted <==**

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TAB<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching application 

## **Description** 

## **Figure 1. Internal schematic diagram** 

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This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

**Table 1. Device summary Order code Marking Package Packaging** STP45NF06 45NF06 TO-220 Tube ~~_—p~~ 

_www.st.com_ 

1/13 

December 2012 

Doc ID 7433 Rev 6 

This is information on a product in full production. 

**Contents** 

**STP45NF06** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



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**STP45NF06** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|60|V|
|VDGR|Drain-gate voltage (RGS=20 kΩ)|60|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at TC= 25 °C|38|A|
|ID|Drain current (continuous) at TC= 100 °C|26|A|
|IDM<br>(1)|Drain current (pulsed)|152|A|
|PTOT|Total dissipation at TC= 25 °C|80|W|
||Derating factor|0.53|W/°C|
|dv/dt(2)|Peak diode recovery voltage slope|7|V/ns|
|Tstg|Storage temperature|- 65 to 175|°C|
|Tj|Max. operating junction temperature|175|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤  38 A, di/dt  ≤ 300 A/µs; VDS(peak) < V(BR)DSS , VDD=80 % V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|1.88|°C/W|
|Rthj-amb<br>(1)|Thermal resistance junction-ambient max|35|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board. 

## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetetive or not repetetive<br>(pulse width limited by Tjmax)|38|A|
|EAS|Single pulse avalanche energy (starting<br>TJ= 25 °C, ID= IAR; VDD=50 V)|135|mJ|



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**STP45NF06** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified). 

## **Table 5. On /off states** 

|**Table 5.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250 mA, VGS= 0|60|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 60 V<br>VDS= 60 V, TC=125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 19 A||0.022|0.028|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward<br>trasconductance|VDS>ID(on)*RDS(on)max, ID=19 A|-|24||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|1730<br>215<br>63||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgs|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 48 V, ID= 38 A,<br>VGS= 10 V|-|43<br>9<br>15|58|ns<br>ns<br>ns|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Voltage rise time|VDD= 30 V, ID= 19 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see _Figure 14_)|-|20<br>100|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time||-|50<br>20|-|ns<br>ns|
|td(off)<br>tf<br>tc|Off-voltage rise time<br>Fall time<br>Cross-over time|Vclamp= 48 V, ID= 38 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_)|-|45<br>42<br>60|-|ns<br>ns<br>ns|



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**STP45NF06** 

**Electrical characteristics** 

## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||38<br>152|A<br>A|
|VSD (2)|Forward on voltage|ISD= 38 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 38 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 16_)|-|95<br>260<br>5.5||ns<br>µC<br>A|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

2. Pulse width limited by safe operating area. 

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**STP45NF06** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

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175<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Transconductance** 

## **Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9.** 

**Capacitance variations** 

**==> picture [181 x 168] intentionally omitted <==**

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**Figure 10. Normalized gate threshold voltage vs temperature** 

**==> picture [183 x 167] intentionally omitted <==**

**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [177 x 167] intentionally omitted <==**

**Figure 12. Source-drain diode forward characteristics** 

**==> picture [181 x 167] intentionally omitted <==**

**Figure 13. Normalized BVDSS vs temperature** 

**==> picture [189 x 168] intentionally omitted <==**

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**STP45NF06** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

**==> picture [462 x 195] intentionally omitted <==**

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 16. Test circuit for inductive load  Figure 17. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


**==> picture [462 x 183] intentionally omitted <==**

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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform<br>**----- End of picture text -----**<br>


**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS Id Inductive Load Turn - off<br>VD<br>90%Vds 90%Id<br>td(v)<br>IDM<br>Vgs<br>90%Vgs on<br>ID<br>Vgs(I(t ))<br>VDD VDD 10%Vds 10%Id<br>Vds<br>tr(v) tf(i)<br>AM01472v1 tc(off) AM05540v1<br>**----- End of picture text -----**<br>


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**STP45NF06** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STP45NF06** 

**Package mechanical data** 

**Table 9. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**STP45NF06** 

**Package mechanical data** 

## **Figure 20. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

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0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**STP45NF06** 

**Revision history** 

## **5 Revision history** 

## **Table 10. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2004|1|Preliminary version.|
|04-Feb-2005|2|Complete version.|
|17-Aug-2006|3|New template. No content change.|
|13-Nov-2006|4|Inserted new value.|
|05-Jul-2010|5|Updated_Section 2.1: Electrical characteristics (curves)_.|
|19-Dec-2012|6|Updated:_Section 4: Package mechanical data_|



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**STP45NF06** 

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