# Power MOSFET, Mdmesh DM2, N Channel, 600 V, 34 A, 0.085 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2531114/)

**URL**: https://novapart.co/products/STP43N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-34-a-0085
**SKU**: STP43N60DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8800
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.085ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2531114/)

## **STP43N60DM2** 

## N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-220 package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS @**<br>**TJmax.**|**RDS(on)**<br>**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STP43N60DM2|650 V|0.093 Ω|34 A|250 W|



- Fast-recovery body diode 

- Extremely low gate charge and input capacitance 

- Low on-resistance 

- 100% avalanche tested 

- Extremely high dv/dt ruggedness 

- Zener-protected 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STP43N60DM2|43N60DM2|TO-220|Tube|



This is information on a product in full production. 

July 2015 

DocID026790 Rev 5 

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_www.st.com_ 

|**Contents**<br>**STP43N60DM2**|**Contents**<br>**STP43N60DM2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>TO-220 type A package information ................................................ 10|
|**5**|**Revision history ............................................................................ 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at Tcase= 25 °C|34|A|
||Drain current (continuous) at Tcase= 100 °C|21||
|IDM<br>_(1)_|Drain current (pulsed)|136|A|
|PTOT|Total dissipation at Tcase= 25 °C|250|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|50|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|||



## **Notes:** 

- (1) Pulse width is limited by safe operating area. 

(2) ISD ≤ 34 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. 

(3) VDS ≤ 480 V. 

## **Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|0.50|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5||



## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive|6|A|
|EAS<br>_(1)_|Singlepulse avalanche energy|800|mJ|



## **Notes:** 

(1) starting Tj = 25 °C, ID = IAR, VDD = 50 V. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 5: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>Tcase= 125 °C|||100||
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold<br>voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 17 A||0.085|0.093|Ω|



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|2500|-|pF|
|Coss|Output capacitance||-|120|-||
|Crss|Reverse transfer<br>capacitance||-|3|-||
|Coss eq.<br>_(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|200|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0 A|-|4|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 34 A,<br>VGS= 10 V (see_Figure 15:_<br>_"Gate charge test circuit"_)|-|56|-|nC|
|Qgs|Gate-source charge||-|13|-||
|Qgd|Gate-drain charge||-|30|-||



## **Notes:** 

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 25 A<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 14: "Switching times_<br>_test circuit for resistive load"_<br>and_Figure 19: "Switching time_<br>_waveform"_)|-|29|-|ns|
|tr|Rise time||-|27|-||
|td(off)|Turn-off delaytime||-|85|-||
|tf|Fall time||-|6|-||



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**Electrical characteristics** 

**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||34|A|
|ISDM<br>_(1)_|Source-drain current<br>(pulsed)||-||136|A|
|VSD<br>_(2)_|Forward on voltage|VGS= 0 V, ISD= 34 A|-||1.6|V|
|trr|Reverse recovery<br>time|ISD= 34 A, di/dt = 100 A/µs,<br>VDD= 60 V (see_Figure 16:_<br>_"Test circuit for inductive load_<br>_switching and diode recovery_<br>_times"_)|-|120||ns|
|Qrr|Reverse recovery<br>charge||-|0.6||µC|
|IRRM|Reverse recovery<br>current||-|10.4||A|
|trr|Reverse recovery<br>time|ISD= 34 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C (see<br>_Figure 16: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|240||ns|
|Qrr|Reverse recovery<br>charge||-|2.4||µC|
|IRRM|Reverse recovery<br>current||-|20.5||A|



## **Notes:** 

(1) Pulse width is limited by safe operating area. 

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [389 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area  Figure 3: Thermal impedance<br>K GC20540<br>δ=0.5<br>0.2<br>0.1<br>10 [-1] 0.05<br>0.02<br>Z th = K*R thj-c<br>δ= tp/ Ƭ<br>0.01<br>Single pulse<br>tp  Ƭ<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tP(s)<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics Figure 5: Transfer characteristics** 

**==> picture [156 x 142] intentionally omitted <==**

**==> picture [157 x 142] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [156 x 143] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

**==> picture [162 x 143] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 9: Normalized gate threshold voltage Figure 8: Capacitance variations vs temperature** 

**==> picture [159 x 143] intentionally omitted <==**

**==> picture [154 x 143] intentionally omitted <==**

**==> picture [398 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Normalized on-resistance vs  Figure 11: Normalized V(BR)DSS vs<br>temperature  temperature<br>**----- End of picture text -----**<br>


**Figure 13: Source- drain diode forward Figure 12: Output capacitance stored energy characteristics** 

**==> picture [163 x 143] intentionally omitted <==**

**==> picture [157 x 143] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 14: Switching times test circuit for resistive load** 

**Figure 15: Gate charge test circuit** 

**==> picture [442 x 153] intentionally omitted <==**

**Figure 16: Test circuit for inductive load switching and diode recovery times** 

**Figure 17: Unclamped inductive load test circuit** 

**Figure 18: Unclamped inductive waveform** 

**==> picture [62 x 33] intentionally omitted <==**

**Figure 19: Switching time waveform** 

**==> picture [87 x 119] intentionally omitted <==**

**==> picture [92 x 160] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 TO-220 type A package information** 

**Figure 20: TO-220 type A package outline** 

**==> picture [407 x 570] intentionally omitted <==**

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**Package information** 

**Table 9: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-Aug-2014|1|First release.|
|30-Sep-2014|2|Updated Table 4: Avalanche characteristics, Table 6: Dynamic, Table<br>7: Switching times and Table 8: Source drain diode.<br>Updated Section 4.2: TO-247, STW43N60DM2.|
|12-Jun-2015|3|Text and formatting changes throughout document<br>Part number STW43N60DM2 has been moved to a separate datasheet<br>On cover page:<br>- updated title description<br>In Section 2 Electrical characteristics:<br>- updated table 5 On/off states<br>- updated table 8 Source drain diode<br>Added Section 2.1 Electrical characteristics (curves)|
|19-Jun-2015|4|Updated coverpage features table.|
|02-Jul-2015|5|On cover page:<br>- updated title<br>In section_Electrical characteristics_:<br>- updated tables_Static_,_Dynamic_,_Switching times_and_Source-drain_<br>_diode_<br>In section_Electrical characteristics (curves)_:<br>- updated figures_Gate charge vs gate-source voltage_,_Static drain-_<br>_source on-resistance_, and_Capacitance variations_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

DocID026790 Rev 5 

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