# Power MOSFET, N Channel, 650 V, 33 A, 0.07 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2098323/)

**URL**: https://novapart.co/products/STP42N65M5/power-mosfet-n-channel-650-v-33-a-007-ohm-to-220
**SKU**: STP42N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.3400
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098323/)

## **STB42N65M5,  STF42N65M5,  STI42N65M5 STP42N65M5,  STW42N65M5** Datasheet 

N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages 

**==> picture [484 x 291] intentionally omitted <==**

**----- Start of picture text -----**<br>
Features<br>TAB<br>Order codes VDS @ TJmax RDS(on) max. ID Package<br>3<br>¢ D PAK2 1 a 1  [2 3] E STB42N65M5 E D²PAK<br>TAB TO-220FP STF42N65M5 TO-220FP<br>STI42N65M5 710 V 79 mΩ 33 A I²PAK<br>STP42N65M5 TO-220<br>I [2] PAK 1  [23]<br>STW42N65M5 TO-247<br>TAB<br>bs<br>• Extremely low RDS(on)<br>• Low gate charge and input capacitance<br>*%. 1  [23] 1  [23] • Excellent switching performance<br>TO-220 TO-247 • 100% avalanche tested<br>D(2, TAB)<br>Applications<br>• Switching applications<br>G(1) Description<br>These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative<br>vertical process technology combined with the well-known PowerMESH horizontal<br>S(3) layout. The resulting products offer extremely low on-resistance, making them<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. 

**Product status** ~~nn~~ STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 

**DS6033** - **Rev 4** - **May 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|||**Value**|**Value**||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**D²PAK, I²PAK,**<br>**TO-220, TO-247**|**TO-220FP**|**Unit**|
|VGS|Gate-source voltage|±25||V|
|ID|Drain current (continuous) at TC= 25 °C|33|33(1)|A|
||Drain current (continuous) at TC= 100 °C|20.8|20.8(1)|A|
|IDM(2)|Drain current (pulsed)|132|132|A|
|PTOT|Total power dissipation at TC= 25 °C|190|40|W|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|VISO|Insulation withstand voltage (RMS) from all three<br>leads to external heat sink (t = 1 s; TC= 25 °C)||2500|V|
|Tj|Operating junction temperature range|-55 to 150||°C|
|Tstg|Storage temperature range||||



_1. Limited by maximum junction temperature._ 

_2. Pulse width limited by safe operating area._ 

_3. ISD ≤ 33 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS._ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Value**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|---|---|
|**ymo**|**arameer**|**D²PAK**|**I²PAK**|**TO-220**|**TO-247**|**TO-220FP**|**n**|
|Rthj-case|Thermal resistance<br>junction-case|0.66||||3.1|°C/W|
|Rthj-amb|Thermal resistance<br>junction-ambient||62.5||50|62.5|°C/W|
|Rthj-pcb (1)|Thermal resistance<br>junction-pcb|30|||||°C/W|



_1. When mounted on an 1 inch² FR-4, 2 Oz copper board._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive<br>(pulse width limited by Tjmax)|11|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|950|mJ|



**DS6033** - **Rev 4** 

**page 2/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics** 

**2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|ID= 1 mA, VGS= 0 V|650|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 650 V|||1|µA|
|||VGS= 0 V, VDS= 650 V,<br>TC= 125 °C(1)|||100|µA|
|IGSS|Gate body leakage current|VGS= ±25 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on- resistance|VGS= 10 V, ID= 16.5 A||70|79|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|4650|-|pF|
|Coss|Output capacitance|||110|||
|Crss|Reverse transfer capacitance|||3.2|||
|Co(tr) (1)|Equivalent capacitance time<br>related|VDS= 0 to 520 V, VGS= 0 V|-|100|-|pF|
|Co(er) (2)|Equivalent capacitance<br>energy related|||285|-||
|Rg|Gate input resistance|f = 1 MHz, ID= 0 A|-|1.1|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 33 A,<br>VGS= 0 to 10 V<br>(seeFigure 20. Test circuit for gate<br>charge behavior)|-|98|-|nC|
|Qgs|Gate-source charge|||28|-||
|Qgd|Gate-drain charge|||39|||



_1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS._ 

_2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(v)|Voltage delay time|VDD= 400 V, ID= 20 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 21. Test circuit for<br>inductive load switching and diode<br>recovery timesand<br>Figure 24. Switching time<br>waveform)|-|52|-|ns|
|tr(v)|Voltage rise time|||8.4|||
|tf(i)|Current fall time|||8.7|||
|tc(off)|Crossing time|||14|||



**DS6033** - **Rev 4** 

**page 3/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||33|A|
|ISDM(1)|Source-drain current (pulsed)||||132||
|VSD(2)|Forward on voltage|ISD= 33 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery time|ISD= 33 A, di/dt = 100 A/µs<br>VDD= 100 V<br>(seeFigure 21. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|400||ns|
|Qrr|Reverse recovery charge|||7||μC|
|IRRM|Reverse recovery current|||35||A|
|trr|Reverse recovery time|ISD= 33 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(seeFigure 21. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|532||ns|
|Qrr|Reverse recovery charge|||10||μC|
|IRRM|Reverse recovery current|||38||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%._ 

**DS6033** - **Rev 4** 

**page 4/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for D²PAK, I²PAK, TO-220 Figure 2. Thermal impedance for D²PAK, I²PAK, TO-220** 

**==> picture [159 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM01565v1<br>(A)<br>100<br>10 10µs<br>100µs<br>1ms<br>1 10ms<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [130 x 126] intentionally omitted <==**

**Figure 3. Safe operating area for TO-247** 

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**----- Start of picture text -----**<br>
ID AM03246v1<br>(A)<br>100<br>10µs<br>10 100µs<br>1ms<br>10ms<br>1<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Thermal impedance for TO-247** 

**==> picture [136 x 132] intentionally omitted <==**

**==> picture [513 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Safe operating area for TO-220FP Figure 6. Thermal impedance for TO-220FP<br>ID AM01566v1 K GC20521<br>(A) δ =0.5<br>100 0.2<br>0.1<br>10 [-1]<br>10 10µs<br>0.05<br>100µs<br>0.02<br>1 1ms 0.01<br>0.1 10ms 10 [-2] Single pulse Zδ =tth= pK*R/ Ƭ thJ-c<br>0.01 10 [-3] tp  Ƭ<br>0.1 1 10 100 VDS(V) 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [-0] tp(s)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 5/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics (curves)** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Output characteristics Figure 8. Transfer characteristics<br>ID AM01589V1 ID AM01590V1<br>(A)  (A)<br>100 VGS = 9, 10 V 100 VDS = 15 V<br>VGS =8 V<br>80 80<br>60 60<br>40 VGS =7 V 40<br>20 20<br>0 VGS =6 V 0<br>0 2 4 6 8 10 12 14 VDS (V) 4 5 6 7 8 9 VGS (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Gate charge vs gate-source voltage Figure 10. Static drain-source on-resistance<br>VDS AM01569V1 VGS RDS(on) AM01568V1<br>(V)  (V)  (mΩ)<br>600 VDD = 520 V 12 76 VGS = 10 V<br>ID = 33 A<br>500 VDS 10 74<br>400 8 72<br>300 6 70<br>200 4 68<br>100 2 66<br>0 0 64<br>0 20 40 60 80 100 120 Qg (nC) 0 5 10 15 20 25 30 ID (A)<br>Figure 11. Capacitance variations Figure 12. Output capacitance stored energy<br>C AM01570v1 Eoss AM03231v1<br>(pF) (µJ)<br>10000 16<br>Ciss<br>14<br>1000 12<br>10<br>100 Coss 8<br>6<br>10 4<br>Crss 2<br>1 0<br>1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 6/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical characteristics (curves)** 

**==> picture [513 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Normalized gate threshold voltage vs<br>Figure 14. Normalized on-resistance vs temperature<br>temperature<br>VGS(th) AM01571V1 (norm.) RDS(on) AM01573V1<br>(norm.)<br>VGS = 10 V<br>ID = 250 μA 2.5<br>1.1<br>2.0<br>1.0<br>1.5<br>0.9<br>1.0<br>0.8<br>0.5<br>0.7<br>0.0<br>0.6 -75 -25 25 75 125 TJ (°C)<br>-75 -25 25 75 125 TJ (°C)<br>**----- End of picture text -----**<br>


**==> picture [470 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Source-drain diode forward characteristics Figure 16. Normalized V(BR)DSS vs temperature<br>**----- End of picture text -----**<br>


**==> picture [404 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM01574v1 V(BR)DSS AM01572V1<br>1.0(V) TJ=-25 ° C (norm.)<br>1.12<br>ID = 1 mA<br>0.9<br>1.08<br>0.8<br>0.7 1.04<br>0.6 TJ=25°C<br>1.00<br>0.5<br>T J =150°C<br>0.96<br>0.4<br>0.3 0.92<br>0.2 0.88<br>0 5 10 15 20 25 30 ISD(A) -75 -25 25 75 125 TJ (°C)<br>**----- End of picture text -----**<br>


## **Figure 17. Switching energy vs gate resistance** 

**==> picture [161 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
E AM01575v1<br>(µJ) Eon<br>ID=20A<br>600 VDD=400V<br>L=50µH<br>500<br>400<br>300 Eoff<br>200<br>100<br>0<br>0 5 10 15 20 25 30 35 40 45 RG( W )<br>**----- End of picture text -----**<br>


_Note: Eon including reverse recovery of a SiC diode._ 

**DS6033** - **Rev 4** 

**page 7/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**Test circuits** 

**3 Test circuits** 

**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Test circuit for resistive load switching times Figure 20. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width + 2.7 kΩ<br>2200 VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. Test circuit for inductive load switching and<br>Figure 22. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S<br>Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform<br>V(BR)DSS Id Concept waveform for Inductive Load Turn-off<br>VD 90%Vds 90%Id<br>Tdelay -off<br>IDM<br>Vgs<br>90%Vgs on<br>ID<br>Vgs(I(t ))<br>VDD VDD 10%Vds 10%Id<br>Vds<br>Trise Tfall<br>AM01472v1 Tcross - over AM05540v2<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 8/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**DS6033** - **Rev 4** 

**page 9/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 D²PAK (TO-263) type A2 package information** 

## **4.1 D²PAK (TO-263) type A2 package information** 

**Figure 25. D²PAK (TO-263) type A2 package outline** 

**==> picture [81 x 67] intentionally omitted <==**

**==> picture [109 x 195] intentionally omitted <==**

**==> picture [45 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_A2_26<br>**----- End of picture text -----**<br>


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**page 10/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 D²PAK (TO-263) type A2 package information** 

**Table 8. D²PAK (TO-263) type A2 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.70|8.90|9.10|
|E2|7.30|7.50|7.70|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.40||
|V2|0°||8°|



**Figure 26. D²PAK (TO-263) recommended footprint (dimensions are in mm)** 

**==> picture [66 x 92] intentionally omitted <==**

**==> picture [14 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
Footprint<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 11/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**D²PAK packing information** 

## **4.2 D²PAK packing information** 

**Figure 27. D²PAK tape outline** 

**DS6033** - **Rev 4** 

**page 12/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 D²PAK packing information** 

**Figure 28. D²PAK reel outline** 

**==> picture [363 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 9. D²PAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Base quantity||1000|
|P2|1.9|2.1|Bulk quantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



**DS6033** - **Rev 4** 

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**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**TO-220FP package information** 

## **4.3 TO-220FP package information** 

**Figure 29. TO-220FP package outline** 

**==> picture [56 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_12_B<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 14/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 TO-220FP package information** 

**Table 10. TO-220FP package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



**DS6033** - **Rev 4** 

**page 15/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 I²PAK package information** 

## **4.4 I²PAK package information** 

**Figure 30. I²PAK package outline** 

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**==> picture [35 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
0004982_Rev_H<br>**----- End of picture text -----**<br>


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**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**I²PAK package information** 

**Table 11. I²PAK package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40|-|4.60|
|A1|2.40|-|2.72|
|b|0.61|-|0.88|
|b1|1.14|-|1.70|
|c|0.49|-|0.70|
|c2|1.23|-|1.32|
|D|8.95|-|9.35|
|e|2.40|-|2.70|
|e1|4.95|-|5.15|
|E|10|-|10.40|
|L|13|-|14|
|L1|3.50|-|3.93|
|L2|1.27|-|1.40|



**DS6033** - **Rev 4** 

**page 17/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**TO-220 type A package information** 

## **4.5 TO-220 type A package information** 

## **Figure 31. TO-220 type A package outline** 

**==> picture [328 x 467] intentionally omitted <==**

**==> picture [67 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_22<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 18/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 TO-220 type A package information** 

**Table 12. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



**DS6033** - **Rev 4** 

**page 19/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**TO-247 package information** 

**4.6 TO-247 package information** 

**Figure 32. TO-247 package outline** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_9<br>**----- End of picture text -----**<br>


**DS6033** - **Rev 4** 

**page 20/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**TO-247 package information** 

**Table 13. TO-247 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



**DS6033** - **Rev 4** 

**page 21/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Ordering information** 

## **5 Ordering information** 

**Table 14. Order codes** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB42N65M5|42N65M5|D²PAK|Tape and reel|
|STF42N65M5||TO-220FP|Tube|
|STI42N65M5||I²PAK||
|STP42N65M5||TO-220||
|STW42N65M5||TO-247||



**DS6033** - **Rev 4** 

**page 22/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

## **Revision history** 

**Table 15. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|16-Jan-2009|1|First release.|
|15-May-2009|2|Updated_figures 9_,_10_,_11_and_17_|
|12-Jun-2009|3|_Figure 15_has been updated|
|02-May-2019|4|Modified features and description on cover page.<br>UpdatedSection  4  Package information.<br>Minor text changes.|



**DS6033** - **Rev 4** 

**page 23/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**<br>D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**<br>TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
||**4.4**<br>I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
||**4.5**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
||**4.6**<br>TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23**||



**DS6033** - **Rev 4** 

**page 24/25** 

**STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS6033** - **Rev 4** 

**page 25/25** 



## Links

- [View this product on Novapart](https://novapart.co/products/STP42N65M5/power-mosfet-n-channel-650-v-33-a-007-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp42n65m5/mosfet-n-ch-650v-33a-to-220/dp/2098323)
---

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