# Power MOSFET, N Channel, 30 V, 40 A, 0.022 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9803149/)

**URL**: https://novapart.co/products/STP40NF03L/power-mosfet-n-channel-30-v-40-a-0022-ohm-to-220
**SKU**: STP40NF03L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3550
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803149/)

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## **STF40NF03L STP40NF03L** 

## N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STF40NF03L|30 V|0.022Ω|23 A|
|STP40NF03L|30 V|0.022Ω|40 A|



■ Low threshold device 

## **Application** 

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**----- Start of picture text -----**<br>
3 3<br>2 2<br>1 1<br>TO-220 TO-220FP<br>**----- End of picture text -----**<br>


■ Switching applications 

## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF40NF03L|F40NF03L|TO-220FP|Tube|
|STP40NF03L|P40NF03L|TO-220|Tube|



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_www.st.com_ 

**Contents** 

**STF40NF03L, STP40NF03L** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|30||V|
|VGS|Gate- source voltage|± 16||V|
|ID|Drain current (continuous) at TC= 25 °C|40|23|A|
|ID|Drain current (continuous) at TC= 100 °C|28|16|A|
|IDM<br>(1)|Drain current (pulsed)|160|92|A|
|Ptot|Total dissipation at TC= 25 °C|70|25|W|
||Derating factor|0.46||W/°C|
|VISO|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t=1 s;TC=25 °C)||2500|V|
|EAS<br>(2)|Single pulse avalanche energy|250||mJ|
|Tstg|Storage temperature|-55 to 175||°C|
|Tj|Max. operating junction temperature||||



1. Pulse width limited by safe operating area. 

2. Starting Tj = 25 °C, ID = 20 A, VDD = 15 V 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Package**|**Value**||**Unit**|
||||**Typ.**|**Max.**||
|Rthj-c|Thermal resistance junction-case|TO-220|1.8|2.1|°C/W|
|||TO-220FP||6||
|Rthj-amb|Thermal resistance junction-ambient<br>max|||62.5|°C/W|
|TJ|Maximum lead temperature for<br>soldering purpose|||300|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250 µA, VGS=0|30|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= max ratings<br>VDS= max ratings,<br>TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±16 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|1.7|2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 20 A<br>VGS= 4.5 V, ID= 20 A||0.018<br>0.028|0.022<br>0.035|Ω<br>Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward<br>transconductance|VDS= 10 V, ID= 20 A|-|20|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|770<br>255<br>60|-|pF<br>pF<br>pF|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 15 V, ID= 20 A<br>RG= 4.7ΩVGS= 4.5 V<br>(see_Figure 16_)|-|14<br>80<br>25<br>16|-|ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 15 V, ID= 40 A,<br>VGS= 4.5 V<br>(see_Figure 17_)|-|10.5<br>4<br>4.5|15|nC<br>nC<br>nC|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

**Table 6. Source drain diode** 

|**Table 6.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current<br>(pulsed)||-||40<br>160|A<br>A|
|VSD (2)|Forward on voltage|ISD= 40 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 40 A,<br>di/dt = 100 A/µs,<br>VDD= 15 V, Tj= 150 °C<br>(see_Figure 18_)|-|34.5<br>30<br>2||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area for TO-220** 

**Figure 3. Thermal impedance for TO-220** 

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**Figure 4. Safe operating area for TO-220FP** 

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM03797v1<br>(A)<br>100<br>100µs<br>10 1ms<br>10ms<br>1 Tj=175°C<br>Tc=25°C<br>0.1 Sinlge<br>pulse<br>0.01<br>0.1 1 10 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Output characteristics** 

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**Figure 7. Transfer characteristics** 

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**Electrical characteristics** 

## **Figure 8. Transconductance** 

## **Figure 9. Static drain-source on resistance** 

**==> picture [155 x 147] intentionally omitted <==**

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**Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations** 

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**Figure 12. Normalized gate threshold voltage vs. temperature** 

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**Figure 13. Normalized on resistance vs. temperature** 

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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

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**Figure 15. Normalized BVDSS vs. temperature** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load** 

**==> picture [209 x 88] intentionally omitted <==**

**==> picture [179 x 121] intentionally omitted <==**

**Figure 18. Test circuit for inductive load switching and diode recovery times** 

**Figure 19. Unclamped inductive load test circuit** 

**==> picture [200 x 117] intentionally omitted <==**

**==> picture [179 x 119] intentionally omitted <==**

**Figure 20. Unclamped inductive waveform** 

**Figure 21. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-220 mechanical data** 

|**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.14||1.70|0.044||0.066|
|c|0.48||0.70|0.019||0.027|
|D|15.25||15.75|0.6||0.62|
|D1||1.27|||0.050||
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.051|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|∅P|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|



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**Package mechanical data** 

**==> picture [403 x 625] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP mechanical data<br>mm<br>Dim.<br>Mi.n Ty.p Ma.x<br>A 4.4 4.6<br>B 2.5 2.7<br>D 2.5 2.75<br>E 0.45 0.7<br>F 0.75 1<br>F1 1.15 1.70<br>F2 1.15 1.5<br>G 4.95 5.2<br>G1 2.4 2.7<br>H 10 10.4<br>L2 16<br>L3 28.6 30.6<br>L4 9.8 10.6<br>L5 2.9 3.6<br>L6 15.9 16.4<br>L7 9 9.3<br>Dai 3 3.2<br>L7<br>E<br>A<br>B<br>D<br>Dia<br>L5<br>L6<br>F1 F2<br>F<br>H G<br>G1<br>L2 L4<br>L3<br>7012510_Rev_J<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

## **Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2004|1|Preliminary version|
|21-Jun-2005|2|Complete version with curves|
|16-Aug-2006|3|New template, no content change|
|21-Feb-2007|4|Typo mistake on page 1|
|20-Nov-2008|5|_Figure 9: Static drain-source on resistance_has been corrected.|
|14-Apr-2009|6|The device in TO-220FP has been added|
|03-Feb-2010|7|Updated_Table 3: Thermal data_.|
|22-Feb-2010|8|Updated_Table 3: Thermal data_.|



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