# Power MOSFET, N Channel, 900 V, 3 A, 4.8 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:9803130/)

**URL**: https://novapart.co/products/STP3NK90ZFP/power-mosfet-n-channel-900-v-3-a-48-ohm-to-220fp
**SKU**: STP3NK90ZFP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4790
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipatio

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 25W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 900V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 4.8ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803130/)

**==> picture [61 x 39] intentionally omitted <==**

## **STD3NK90Z, STP3NK90Z, STP3NK90ZFP** 

N-channel 900 V, 4.1 Ω typ., 3 A Zener-protected SuperMESH™ Power MOSFET in DPAK, TO-220 and TO-220FP packages 

**Datasheet** − **production data** 

## **Features** 

|**Order codes**|**VDS**|**RDS(on)**|**ID**|**PTOT**|
|---|---|---|---|---|
|STD3NK90ZT4|900 V|4.8Ω|3 A|90 W|
|STP3NK90Z|||||
|STP3NK90ZFP||||25 W|



- Extremely high dv/dt capability 

- 100% avalanche tested 

- Gate charge minimized 

- Very good manufacturing repeatability 

**==> picture [160 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB ���<br>2 3<br>1<br>�<br>DPAK � �<br>TO-220<br>3<br>2<br>1<br>TO-220FP<br>**----- End of picture text -----**<br>


- Very low intrinsic capacitances 

## **Applications** 

- Switching applications 

## **Description** 

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 

## **Figure 1. Internal schematic diagram** 

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, TAB<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
SC15010<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD3NK90ZT4|D3NK90Z|DPAK|Tape and reel|
|STP3NK90Z|P3NK90Z|TO-220|Tube|
|STP3NK90ZFP|P3NK90ZFP|TO-220FP||



_www.st.com_ 

1/20 

January 2013 

Doc ID 9193 Rev 2 

This is information on a product in full production. 

**STD3NK90Z, STP3NK90Z, STP3NK90ZFP** 

|||
|---|---|
|**Contents**|**STD3NK90Z, STP3NK90Z, STP3NK90ZFP**|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)           . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**DPAK, TO-220**|**TO-220FP**||
|VDS|Drain-source voltage|900||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25°C|3|3(1)|A|
|ID|Drain current (continuous) at TC= 100°C|1.89|1.89(1)|A|
|IDM<br>(2)|Drain current (pulsed)|12|12(1)|A|
|PTOT|Total dissipation at TC= 25°C|90|25|W|
||Derating factor|0.72|0.2|W/°C|
|ESD|Gate-source human body model (R=1,5<br>kΩ, C=100 pF)|4||kV|
|dv/dt(3)|Peak diode recovery voltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (RMS) from<br>all threeleads to external heat sink<br>(t=1s;TC=25°C)||2500|V|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150||°C|



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area 

3. ISD < 3A, di/dt < 200A/µs, VDD =80% V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**DPAK**|**TO-220**|**TO-220FP**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|1.38||5|°C/W|
|Rthj-amb|Thermal resistance junction-amb max||62.5||°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|50|||°C|



1. When mounted on 1inch² FR-4 board, 2 oz Cu 

**Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max value**|**Unit**|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tj max)|3|A|
|EAS|Single pulse avalanche energy<br>(starting Tj=25°C, ID=IAR, VDD= 50V)|180|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase =25°C unless otherwise specified) 

## **Table 5. On /off states** 

|**Table 5.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0|900|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 900 V<br>VDS= 900 V, Tj=125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage<br>current (VDS= 0)|VGS= ±20 V, VDS= 0|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 1.5 A||4.1|4.8|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward<br>transconductance|VDS=15 V, ID= 1.5 A|-|2.7|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f=1 MHz, VGS=0|-|590<br>63<br>13|-|pF<br>pF<br>pF|
|Coss eq<br>(2)|Equivalent ouput<br>capacitance|VGS=0, VDS=0 V to 400 V|-|34|-|pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=720 V, ID= 3 A<br>VGS=10 V_see (Figure 18)_|-|22.7<br>4.2<br>12|-|nC<br>nC<br>nC|



1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 

**Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=450 V, ID= 1.5 A,<br>RG=4.7Ω,VGS=10 V<br>see_(Figure 17)_|-|18<br>7|-|ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD=720 V, ID= 1.5 A,<br>RG=4.7Ω,VGS=10 V<br>see_(Figure 17)_|-|45<br>18|-|ns<br>ns|



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**Electrical characteristics** 

## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||3<br>12|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 3 A, VGS= 0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 3 A, di/dt = 100A/µs,<br>VDD=40 V, Tj=150°C<br>_(Figure 22)_|-|510<br>2.2<br>8.7||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 

## **Table 9. Gate-source zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown<br>voltage|IGS=± 1 mA, ID=0|30|-|-|V|



The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for DPAK and TO-220** 

**==> picture [158 x 155] intentionally omitted <==**

**Figure 3. Thermal impedance for DPAK and TO-220** 

**==> picture [159 x 153] intentionally omitted <==**

## **Figure 4. Safe operating area for TO-220FP** 

**==> picture [157 x 154] intentionally omitted <==**

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [159 x 154] intentionally omitted <==**

## **Figure 6. Output characterisics** 

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## **Figure 7. Transfer characteristics** 

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**Electrical characteristics** 

## **Figure 8. Transconductance Figure 9. Static drain-source on-resistance** 

**==> picture [160 x 153] intentionally omitted <==**

**==> picture [170 x 155] intentionally omitted <==**

**Figure 10. Gate charge vs gate-source voltage** 

**==> picture [171 x 156] intentionally omitted <==**

**Figure 11. Capacitance variations** 

**==> picture [165 x 154] intentionally omitted <==**

**Figure 12. Normalized gate threshold voltage vs temperature** 

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**Figure 13. Normalized on-resistance vs temperature** 

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**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**==> picture [169 x 157] intentionally omitted <==**

**Figure 15. Maximum avalanche energy vs temperature** 

**==> picture [169 x 155] intentionally omitted <==**

## **Figure 16. Normalized BVDSS vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit resistive load** 

**==> picture [453 x 152] intentionally omitted <==**

**Figure 19. Test circuit for inductive load switching and diode recovery times** 

**Figure 20. Unclamped Inductive load test circuit** 

**==> picture [454 x 148] intentionally omitted <==**

**Figure 21. Unclamped inductive waveform** 

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**Figure 22. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 10. DPAK (TO-252) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1||5.10||
|E|6.40||6.60|
|E1||4.70||
|e||2.28||
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1|||
|L1||2.80||
|L2||0.80||
|L4|0.60||1|
|R||0.20||
|V2|0°||8°|



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**Package mechanical data** 

**==> picture [169 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. DPAK (TO-252) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068772_I<br>**----- End of picture text -----**<br>


## **Figure 24. DPAK footprint[(a)]** 

**==> picture [405 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.7 1.8 3<br>1.6<br>2.3<br>6.7<br>2.3<br>1.6<br>AM08850v1<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters 

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**Package mechanical data** 

## **Table 11. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 25. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 12. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

**==> picture [145 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 576] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 13. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1||Base qty.|2500|
|P1|7.9|8.1||Bulk qty.|2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**Packaging mechanical data** 

## **Figure 27. Tape for DPAK (TO-252)** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>o i e ; —4 |<br>| / O0O0 G8G COO0G 0 O0O E<br>F<br>K0 W<br>B1 B0<br>om e |||| e || ®]]<br>era olo l o i a i c te<br>l<br>|<br>‘,<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 a<br>User direction of feed<br>R<br>S e ca l e alice<br>a Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


## **Figure 28. Reel for DPAK (TO-252)** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Oct-2006|1|First release.|
|29-Jan-2013|2|– The part number STD3NK90Z-1 has been moved to a separate<br>datasheet<br>– Minor text changes<br>– Updated:_Section 4: Package mechanical data_|



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## Links

- [View this product on Novapart](https://novapart.co/products/STP3NK90ZFP/power-mosfet-n-channel-900-v-3-a-48-ohm-to-220fp)
- [Request a quote for this part](https://novapart.co/quote/)
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> Novapart is a B2B electronic component broker that sources across 500+ verified
> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.