# Power MOSFET, N Channel, 800 V, 2.5 A, 4.5 ohm, TO-220, Through Hole
**URL**: https://novapart.co/products/STP3NK80Z/power-mosfet-n-channel-800-v-25-a-45-ohm-to-220
**SKU**: STP3NK80Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6610
**Stock**: 500+
**Lead Time**: 106 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipatio
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 70W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.5A |
| Drain Source On State Resistance | 4.5ohm |
| Gate Source Threshold Voltage Max | 3.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9512772/)
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
Datasheet - production data
## **Features**
|**Order code**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STD3NK80Z-1|800 V|4.5 Ω|2.5 A|
|STD3NK80ZT4|800 V|4.5 Ω|2.5 A|
|STF3NK80Z|800 V|4.5 Ω|2.5 A|
|STP3NK80Z|800 V|4.5 Ω|2.5 A|
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
**Figure 1: Internal schematic diagram**
## **Applications**
- Switching applications
## **Description**
These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by
STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD3NK80Z-1|D3NK80Z|IPAK|Tube|
|STD3NK80ZT4|D3NK80Z|DPAK|Tape and reel|
|STF3NK80Z|F3NK80Z|TO-220FP|Tube|
|STP3NK80Z|P3NK80Z|TO-220|Tube|
This is information on a product in full production.
April 2017
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_www.st.com_
**Contents**
**STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
## **Contents**
|**1**|**Electrical**|**ratings ............................................................................. 3**|
|---|---|---|
|**2**|**Electrical**|**characteristics ................................................................ 4**|
||2.1|Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**||
|**4**|**Package information ..................................................................... 10**||
||4.1|IPAK (TO-251) type A package information .................................... 10|
||4.2|DPAK package information ............................................................. 12|
|||4.2.1
DPAK (TO-252) type A package information ................................... 12|
|||4.2.2
DPAK (TO-252) type C2 package information ................................. 15|
|||4.2.3
DPAK (TO-252) type E package information ................................... 18|
|||4.2.4
DPAK (TO-252) packing information ................................................ 20|
||4.3|TO-220FP package information ...................................................... 22|
||4.4|TO-220 package information ........................................................... 24|
|||4.4.1
TO-220 type A package information ................................................. 24|
|||4.4.2
TO-220 type H package information ................................................ 26|
|**5**|**Revision history ............................................................................ 28**||
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220,**
**DPAK,**
**IPAK**|**TO-220FP**||
|VDS|Drain-source voltage|800||V|
|VGS|Gate-source voltage|±30||V|
|ID|Drain current (continuous) at TC= 25 °C|2.5|2.5_(1)_|A|
||Drain current (continuous) at TC= 100 °C|1.57|1.57_(1)_|A|
|IDM_(2)_|Drain current (pulsed)|10|10_(1)_|A|
|PTOT|Total dissipation at TC= 25 °C|70|25|W|
|ESD|Gate-source, human body model,
R = 1.5 kΩ, C = 100 pF|2||kV|
|dv/dt_(3)_|Peak diode recoveryvoltage slope|4.5||V/ns|
|VISO|Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC= 25 °C)||2.5|kV|
|Tstg|Storage temperature range|-55 to 150||°C|
|Tj|Operationjunction temperature range||||
## **Notes:**
- (1)This value is limited by package.
- (2)Pulse width is limited by safe operating area.
- (3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V
**Table 3: Thermal data**
|||**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**TO-220**|**TO-220FP**|**DPAK**|**IPAK**||
|Rthj-case|Thermal resistancejunction-case|1.78|5|1.78||°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5|||100|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|||50||°C/W|
## **Notes:**
- (1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
**Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or non-repetitive
(pulse width limited byTJ max)|2.5|A|
|EAS|Singlepulse avalanche energy(startingTJ=25 °C, ID= IAR, VDD= 50 V)|170|mJ|
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**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
**Table 5: On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|800|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 800 V|||1|µA|
|||VGS= 0 V, VDS= 800 V,
TC= 125 °C_(1)_|||50|µA|
|IGSS|Gate-bodyleakage current|VDS= 0 V, VGS= ±20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source
on- resistance|VGS= 10 V, ID= 1.25 A||3.8|4.5|Ω|
## **Notes:**
(1)Defined by design, not subject to production test.
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0 V, VDS= 25 V,
f = 1 MHz|-|485|-|pF|
|Coss|Output capacitance||-|57|-|pF|
|Crss|Reverse transfer capacitance||-|11|-|pF|
|Coss eq_(1)_|Equivalent output capacitance|VGS= 0 V, VDS= 0 to 640 V|-|22|-|pF|
|Qg|Totalgate charge|VDD= 640 V, ID= 2.5 A,
VGS= 0 to 10 V
(see_Figure 17: "Test circuit_
_for gate charge behavior"_)|-|19|-|nC|
|Qgs|Gate-source charge||-|3.2|-|nC|
|Qgd|Gate-drain charge||-|10.8|-|nC|
## **Notes:**
(1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 400 V, ID= 1.25 A, RG= 4.7
Ω, VGS=10 V
(see_Figure 16: "Test circuit for_
_resistive load switching times"_and
_Figure 21: "Switching time_
_waveform"_)|-|17|-|ns|
|tr|Rise time||-|27|-|ns|
|td(off)|Turn-off delaytime||-|36|-|ns|
|tf|Fall time||-|40|-|ns|
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**Electrical characteristics**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 8: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||2.5|A|
|ISDM_(1)_|Source-drain current
(pulsed)||-||10|A|
|VSD_(2)_|Forward on voltage|ISD= 2.5 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recoverytime|ISD= 2.5 A, di/dt = 100 A/µs
VDD= 50 V
(see_Figure 18: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|384||ns|
|Qrr|Reverse recoverycharge||-|1.6||μC|
|IRRM|Reverse recovery current||-|8.4||A|
|trr|Reverse recoverytime|ISD= 2.5 A, di/dt = 100 A/µs,
VDD= 50 V , TJ= 150 °C
(see_Figure 18: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|474||ns|
|Qrr|Reverse recovery charge||-|2.1||μC|
|IRRM|Reverse recovery current||-|8.8||A|
## **Notes:**
(1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%. (2)Pulse width is limited by safe operating area.
**Table 9: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown
voltage|IGS= ±1 mA (open drain)|30|-|-|V|
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**==> picture [144 x 19] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Safe operating area for
TO-220, DPAK, IPAK
**----- End of picture text -----**
**==> picture [170 x 170] intentionally omitted <==**
**Figure 3: Thermal impedance for TO-220, DPAK, IPAK**
**==> picture [162 x 160] intentionally omitted <==**
**----- Start of picture text -----**
CG20930
K
δ = 0.5
δ = 0.2
δ = 0.1
10 [-1]
Zδ = tZ δ = tthth = k R = k Rpp / / Ƭ Ƭ ththjj-C�-C�
δ = 0.05
δ = 0.02
SINGLE PULSEδ = 0.01 tt pp ƬƬ
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp(s)
**----- End of picture text -----**
**Figure 4: Safe operating area for TO-220FP**
**==> picture [164 x 165] intentionally omitted <==**
**Figure 5: Thermal impedance for TO-220FP**
**==> picture [162 x 159] intentionally omitted <==**
**Figure 6: Output characteristics**
**==> picture [159 x 158] intentionally omitted <==**
**Figure 7: Transfer characteristics**
**==> picture [164 x 162] intentionally omitted <==**
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**Electrical characteristics**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Figure 8: Static drain-source on-resistance**
**==> picture [181 x 173] intentionally omitted <==**
**Figure 10: Capacitance variations**
**==> picture [182 x 172] intentionally omitted <==**
**Figure 12: Normalized on-resistance vs. temperature**
**==> picture [177 x 165] intentionally omitted <==**
**Figure 9: Gate charge vs. gate-source voltage**
**==> picture [174 x 173] intentionally omitted <==**
**Figure 11: Normalized gate threshold voltage vs. temperature**
**==> picture [189 x 172] intentionally omitted <==**
**Figure 13: Source-drain diode forward characteristics**
**==> picture [179 x 166] intentionally omitted <==**
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## **Electrical characteristics**
**Figure 14: Normalized V(BR)DSS vs. temperature**
**==> picture [192 x 172] intentionally omitted <==**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Figure 15: Maximum avalanche energy vs. temperature**
**==> picture [178 x 164] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 562] intentionally omitted <==**
**----- Start of picture text -----**
Figure 16: Test circuit for resistive load Figure 17: Test circuit for gate charge
switching times behavior
Figure 18: Test circuit for inductive load Figure 19: Unclamped inductive load test
switching and diode recovery times circuit
Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform
**----- End of picture text -----**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 IPAK (TO-251) type A package information**
**Figure 22: IPAK (TO-251) type A package outline**
**==> picture [406 x 461] intentionally omitted <==**
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**Package information**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 10: IPAK (TO-251) type A package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||
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**Package information**
# **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
## **4.2 DPAK package information**
## **4.2.1 DPAK (TO-252) type A package information**
**Figure 23: DPAK (TO-252) type A package outline**
**==> picture [408 x 315] intentionally omitted <==**
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## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 11: DPAK (TO-252) type A mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|4.60|4.70|4.80|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|(L1)|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|
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**Package information**
**Figure 24: DPAK (TO-252) type A recommended footprint (dimensions are in mm)**
**==> picture [407 x 274] intentionally omitted <==**
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**Package information**
## **4.2.2 DPAK (TO-252) type C2 package information**
**Figure 25: DPAK (TO-252) type C2 package outline**
**==> picture [407 x 464] intentionally omitted <==**
**----- Start of picture text -----**
0068772_C2_22
**----- End of picture text -----**
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**Table 12: DPAK (TO-252) type C2 mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1||2.90 REF||
|L2|0.90||1.25|
|L3||0.51 BSC||
|L4|0.60|0.80|1.00|
|L6||1.80 BSC||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|
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**Package information**
**Figure 26: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm)**
**==> picture [406 x 275] intentionally omitted <==**
**----- Start of picture text -----**
FP_0068772_22
**----- End of picture text -----**
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**Package information**
## **4.2.3 DPAK (TO-252) type E package information**
**Figure 27: DPAK (TO-252) type E package outline**
**==> picture [407 x 551] intentionally omitted <==**
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## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 13: DPAK (TO-252) type E mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|2.18||2.39|
|A2|||0.13|
|b|0.65||0.884|
|b4|4.95||5.46|
|c|0.46||0.61|
|c2|0.46||0.60|
|D|5.97||6.22|
|D1|5.21|||
|E|6.35||6.73|
|E1|4.32|||
|e||2.286||
|e1||4.572||
|H|9.94||10.34|
|L|1.50||1.78|
|L1||2.74||
|L2|0.89||1.27|
|L4|||1.02|
**Figure 28: DPAK (TO-252) type E recommended footprint (dimensions are in mm)**
**==> picture [407 x 273] intentionally omitted <==**
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## **Package information**
## **4.2.4 DPAK (TO-252) packing information**
**Figure 29: DPAK (TO-252) tape outline**
~~>~~ 20/29 DocID9565 Rev 7
**Package information**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
## **Figure 30: DPAK (TO-252) reel outline**
**Table 14: DPAK (TO-252) tape and reel mechanical data**
|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Baseqty.||2500|
|P1|7.9|8.1|Bulkqty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||
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**Package information**
## **4.3 TO-220FP package information**
**Figure 31: TO-220FP package outline**
**==> picture [406 x 574] intentionally omitted <==**
**----- Start of picture text -----**
7012510_Rev_12_B
**----- End of picture text -----**
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## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 15: TO-220FP package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|
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## **Package information**
## **4.4 TO-220 package information 4.4.1 TO-220 type A package information**
**Figure 32: TO-220 type A package outline**
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**Package information**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 16: TO-220 type A mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
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## **Package information**
## **4.4.2 TO-220 type H package information**
**Figure 33: TO-220 type H package outline**
**==> picture [406 x 540] intentionally omitted <==**
**----- Start of picture text -----**
0015988_H_21
**----- End of picture text -----**
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**Package information**
## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
**Table 17: TO-220 type H package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40|4.45|4.50|
|A1|1.22||1.32|
|A2|2.49|2.59|2.69|
|A3|1.17|1.27|1.37|
|b|0.78||0.87|
|b2|1.25||1.34|
|b4|1.20||1.29|
|b6|||1.50|
|b7|||1.45|
|c|0.49||0.56|
|D|15.40|15.50|15.60|
|D1|9.05|9.15|9.25|
|E|10.08|10.18|10.28|
|e|2.44|2.54|2.64|
|e1|4.98|5.08|5.18|
|H1|6.25|6.35|6.45|
|L|13.20|13.40|13.60|
|L1|3.50|3.70|3.90|
|L2|16.30|16.40|16.50|
|L3|28.70|28.90|29.10|
|∅P|3.75|3.80|3.85|
|Q|2.70|2.80|2.90|
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**Revision history**
## **5 Revision history**
|||**Table 18: Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|09-Sep-2004|3|Complete document|
|10-Aug-2006|4|New template, no content change|
|26-Feb-2009|5|Updated mechanical data|
|07-Sep-2009|6|VESD(G-S)value has been corrected|
|06-Apr-2017|7|Updated_Section 1: "Electrical ratings"_,_Section 2: "Electrical_
_characteristics"_and_Section 4: "Package information"_.
Minor text changes|
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## **STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STP3NK80Z/power-mosfet-n-channel-800-v-25-a-45-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp3nk80z/mosfet-n-to-220/dp/9512772)
---
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