# Power MOSFET, N Channel, 500 V, 2.3 A, 2.8 ohm, TO-220, Through Hole ![Product image](https://novapart.co/image/farnell:2797966/) **URL**: https://novapart.co/products/STP3NK50Z/power-mosfet-n-channel-500-v-23-a-28-ohm-to-220 **SKU**: STP3NK50Z **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2440 **Stock**: 1000+ **Lead Time**: 373 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | SuperMESH | | Qualification | - | | Power Dissipation | 45W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220 | | Drain Source Voltage Vds | 500V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 2.3A | | Drain Source On State Resistance | 2.8ohm | | Gate Source Threshold Voltage Max | 3.75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2797966/) ## **STP3NK50Z** ~~ee~~ N-channel 500 V, 2.8 Ω typ., 2.3 A Zener-protected SuperMESH™ Power MOSFET in a TO-220 package **Datasheet** - **production data** ## **Features** **==> picture [70 x 77] intentionally omitted <==** **----- Start of picture text -----**
TAB
3
2
1
TO-220
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|**Features**|**Features**|||| |---|---|---|---|---| |**Order code**|**VDS**|**RDS(on)max.**|**ID**|**PTOT**| |STP3NK50Z|500 V|3.3Ω|2.3 A|45 W| - Extremely high dv/dt capability - ESD improved capability - 100% avalanche tested - Gate charge minimized - Zener-protected ## **Applications** ## **Figure 1. Internal schematic diagram** **==> picture [85 x 148] intentionally omitted <==** **----- Start of picture text -----**
D(2, TAB)
G(1)
S(3)
**----- End of picture text -----**
- Switching applications ## **Description** This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. **==> picture [31 x 5] intentionally omitted <==** **----- Start of picture text -----**
AM01476v1
**----- End of picture text -----**
**Table 1. Device summary** |**Order code**|**Marking**|**Packages**|**Packaging**| |---|---|---|---| |STP3NK50Z|P3NK50Z|TO-220|Tube| August 2013 DocID025103 Rev 1 1/14 _www.st.com_ This is information on a product in full production. **Contents** **STP3NK50Z** |**Contents**|**Contents**| |---|---| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| 2/14 DocID025103 Rev 1 **STP3NK50Z** **Electrical ratings** ## **1 Electrical ratings** **Table 2. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VDS|Drain-source voltage|500|V| |VDGR|Drain-gate voltage (RGS=20 kΩ)|500|V| |VGS|Gate-source voltage|± 30|V| |ID|Drain current (continuous) at TC= 25 °C|2.3|A| |ID|Drain current (continuous) at TC= 100 °C|1.45|A| |IDM
(1)|Drain current (pulsed)|9.2|A| |PTOT|Total dissipation at TC= 25 °C|45|W| ||Derating factor|0.36|W/°C| |ESD|Gate-source human body model (C = 100 pF,
R = 1.5 kΩ)|2|kV| |dv/dt(2)|Peak diode recovery voltage slope|4.5|V/ns| |Tstg|Storage temperature|-55 to 150|°C| |Tj|Operating junction temperature||°C| 1. Pulse width limited by safe operating area. 2. ID ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS **Table 3. Thermal data** ||**Table 3. Thermal data**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |Rthj-case|Thermal resistance junction-case max|2.78|°C/W| |Rthj-amb|Thermal resistance junction-ambient max|62.5|°C/W| **Table 4. Avalanche characteristics** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |IAR|Max current during repetitive or single pulse
avalanche (pulse width limited by Tjmax)|2.3|A| |EAS|Single pulse avalanche energy
(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|120|mJ| DocID025103 Rev 1 3/14 **STP3NK50Z** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE = 25 °C unless otherwise specified). **Table 5. On/off states** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)DSS|Drain-source breakdown
voltage (VGS= 0)|ID= 1 mA|500|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= 500 V
VDS= 500 V, Tc=125 °C|||1
50|µA
µA| |IGSS|Gate body leakage current
(VDS= 0)|VGS= ± 20 V|||±10|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V| |RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 1.15 A||2.8|3.3|Ω| ## **Table 6. Dynamic** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |g(1)|Forward transconductance|VDS=15 V, ID=1.15 A|-|1.5||S| |Ciss|Input capacitance|VDS=25 V, f=1 MHz, VGS=0|-|280||pF| |Coss|Output capacitance||-|42||pF| |Crss|Reverse transfer
capacitance||-|8||pF| |Coss eq.
(2)|Equivalent capacitance time
related|VGS= 0, VDS= 0 to 400 V|-|27.5||pF| |td(on)|Turn-on delay time|VDD= 250 V, ID= 1.15 A,
RG=4.7Ω, VGS=10 V
_(seeFigure 19 and15)_|-|8||ns| |tr|Rise time||-|13||ns| |td(off)|Turn-off delay time||-|24||ns| |tf|Fall time||-|14||ns| |Qg|Total gate charge|VDD= 400 V, ID= 2.3 A
VGS=10 V
_(seeFigure 16)_|-|11|15|nC| |Qgs|Gate-source charge||-|2.5||nC| |Qgd|Gate-drain charge||-|5.6||nC| 1. Pulsed: Pulse duration = 300 ìs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 DocID025103 Rev 1 **STP3NK50Z** **Electrical characteristics** **Table 7. Source drain diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ISD|Source-drain current||-||2.3|A| |ISDM
(1)|Source-drain current (pulsed)||-||9.2|A| |VSD
(2)|Forward on voltage|ISD= 2.3 A, VGS=0|-||1.6|V| |trr|Reverse recovery time|ISD= 2.3 A, VDD= 40 V
di/dt = 100 A/µs,
_(seeFigure 17)_|-|250||ns| |Qrr|Reverse recovery charge||-|745||nC| |IRRM|Reverse recovery current||-|6||A| |trr|Reverse recovery time|ISD= 12 A,VDD= 40 V
di/dt=100 A/µs,
Tj=150 °C
_(seeFigure 17)_|-|300||ns| |Qrr|Reverse recovery charge||-|960||nC| |IRRM|Reverse recovery current||-|6.2||A| 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Pulse width limited by safe operating area **Table 8. Gate-source Zener diode** |**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID=0|30|-|-|V| The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID025103 Rev 1 5/14 **STP3NK50Z** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM15994v1
(A) Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1
1ms
10ms
0.1
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
## **Figure 3. Thermal impedance** **==> picture [173 x 167] intentionally omitted <==** **Figure 4. Output characteristics** **==> picture [179 x 168] intentionally omitted <==** **Figure 5. Transfer characteristics** **==> picture [173 x 167] intentionally omitted <==** **Figure 6. Transconductance** **==> picture [167 x 168] intentionally omitted <==** **Figure 7. Capacitance variations** **==> picture [174 x 167] intentionally omitted <==** 6/14 DocID025103 Rev 1 **STP3NK50Z** **Electrical characteristics** **Figure 8. Gate charge vs gate-source voltage** **==> picture [185 x 167] intentionally omitted <==** **Figure 10. Static drain-source on-resistance** **==> picture [183 x 166] intentionally omitted <==** **Figure 12. Maximum avalanche energy vs temperature** **==> picture [183 x 167] intentionally omitted <==** **Figure 9. Normalized gate threshold voltage vs temperature** **==> picture [182 x 167] intentionally omitted <==** **Figure 11. Source-drain forward characteristics** **==> picture [169 x 167] intentionally omitted <==** **Figure 13. Normalized BVDSS vs temperature** **==> picture [187 x 167] intentionally omitted <==** DocID025103 Rev 1 7/14 **STP3NK50Z** **Electrical characteristics** **Figure 14. Normalized on-resistance vs temperature** **==> picture [182 x 167] intentionally omitted <==** 8/14 DocID025103 Rev 1 **STP3NK50Z** **Test circuits** ## **3 Test circuits** **Figure 15. Switching times test circuit for resistive load** **Figure 16. Gate charge test circuit** **==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times** **==> picture [462 x 346] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
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DocID025103 Rev 1 9/14 **STP3NK50Z** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 10/14 DocID025103 Rev 1 **STP3NK50Z** **Package mechanical data** **Table 9. TO-220 type A mechanical data** ||**Table 9. TO-220 type A mechanical data**|**Table 9. TO-220 type A mechanical data**|**Table 9. TO-220 type A mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| DocID025103 Rev 1 11/14 **STP3NK50Z** **Package mechanical data** ## **Figure 21. TO-220 type A drawing** 12/14 DocID025103 Rev 1 **STP3NK50Z** **Revision history** ## **5 Revision history** **Table 10. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |13-Aug-2013|1|First release.| DocID025103 Rev 1 13/14 **STP3NK50Z** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. 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