# Power MOSFET, N Channel, 40 V, 120 A, 0.00146 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807218/)

**URL**: https://novapart.co/products/STP360N4F6/power-mosfet-n-channel-40-v-120-a-000146-ohm-to
**SKU**: STP360N4F6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F6 |
| Qualification | AEC-Q101 |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 300W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.00146ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.00146ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807218/)

## **STI360N4F6, STP360N4F6** 

Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-220 packages 

**Datasheet** - **production data** 

## **Features** 

**==> picture [178 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB TAB<br>3<br>1 [2] [3] 1 2<br>I²PAK TO-220<br>**----- End of picture text -----**<br>


|**Features**||||
|---|---|---|---|
|**Order codes**|**VDS**|**RDS(on) max.**|**ID**|
|STI360N4F6|40 V|1.8 mΩ|120 A|
|STP360N4F6||||



- Designed for automotive applications and AEC-Q101 qualified 

- Very low on-resistance 

- Low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

## **Figure 1.  Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Packages**|**Packing**|
|---|---|---|---|
|STI360N4F6|360N4F6|I²PAK|Tube|
|STP360N4F6||TO-220||



December 2015 

This is information on a product in full production. 

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_www.st.com_ 

**Contents** 

**STI360N4F6, STP360N4F6** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>I²PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||4.2<br>TO-220 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|40|V|
|VGS|Gate-source voltage|±20|V|
|ID<br>(1)(2)|Drain current (continuous) at TC= 25 °C|120|A|
||Drain current (continuous) at TC= 100 °C|120||
|IDM<br>(1)|Drain current (pulsed)|480|A|
|PTOT|Total dissipation at TC= 25 °C|300|W|
|Tstg|Storage temperature|- 55 to 175|°C|
|Tj|Operating junction temperature|||



1. Current limited by package. 

2. Pulse width is limited by safe operating area. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|0.5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5||



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**Electrical characteristics** 

## **2 Electrical characteristics** 

## (TCASE = 25 °C unless otherwise specified) 

**Table 4. Static** 

|||**Table 4. Static**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 250 µA|40|||V|
|IDSS|Zero gate voltage<br>Drain current|VGS= 0 V, VDS= 40 V|||1|µA|
|||VGS= 0 V, VDS= 40 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ± 0 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3||4.5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 60 A||1.46|1.8|mΩ|



**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|17800|-|pF|
|Coss|Output capacitance||-|1750|-||
|Crss|Reverse transfer<br>capacitance||-|1305|-||
|Qg|Total gate charge|VDD= 20 V, ID= 120 A,<br>VGS= 10 V (see_Figure 14:_<br>_Gate charge test circuit_)|-|304|-|nC|
|Qgs|Gate-source charge||-|96|-||
|Qgd|Gate-drain charge||-|87|-||



**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 20 V, ID= 60 A<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 13: Switching_<br>_times test circuit for_<br>_resistive load_and<br>_Figure 18: Switching time_<br>_waveform_)|-|64|-|ns|
|tr|Rise time||-|182|-||
|td(off)|Turn-off-delay time||-|240|-||
|tf|Fall time||-|130|-||



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**STI360N4F6, STP360N4F6** 

**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>(1)|Source-drain current||-||120|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||480|A|
|VSD<br>(2)|Forward on voltage|ISD= 120 A, VGS= 0 V|-||1.3|V|
|trr|Reverse recovery time|ISD= 120 A, VDD= 32 V<br>di/dt = 100 A/µs,<br>Tj= 25 °C (see<br>_Figure 15: Test circuit_<br>_for inductive load_<br>_switching and diode_<br>_recovery times_)|-|44||ns|
|Qrr|Reverse recovery charge||-|47||nC|
|IRRM|Reverse recovery current||-|2.1||A|



1. Current limited by package 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**STI360N4F6, STP360N4F6** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**Figure 10. Normalized on-resistance vs temperature** 

**Figure 9. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized V(BR)DSS vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [457 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Switching times test circuit for  Figure 14. Gate charge test circuit<br>resistive load<br>Mop<br>12 V i  47kQ ' 1kO<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD |,=CONST<br>VD<br>VGS<br>tL— RG D.U.T. V=20VEV 2200onax S e 1 00 0 D.U.T.<br>PW LZ }<br>| = uF (7K47kQ v.<br>py<br>AM01468v1 PW | 1kQ AM01469v1<br>Figure 15. Test circuit for inductive load  Figure 16. Unclamped inductive load test circuit<br>switching and diode recovery times<br>**----- End of picture text -----**<br>


**==> picture [443 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 I²PAK package information** 

**==> picture [198 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. I²PAK (TO-262) package outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0004982_Rev_H<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 8. I²PAK (TO-262) package mechanical data** 

||**Table 8. I²PAK(TO-262) package mechanical data**|**Table 8. I²PAK(TO-262) package mechanical data**|**Table 8. I²PAK(TO-262) package mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ**|**max.**|
|A|4.40||4.60|
|A1|2.40||2.72|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.49||0.70|
|c2|1.23||1.32|
|D|8.95||9.35|
|e|2.40||2.70|
|e1|4.95||5.15|
|E|10||10.40|
|L|13||14|
|L1|3.50||3.93|
|L2|1.27||1.40|



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**Package information** 

## **4.2 TO-220 package information** 

**==> picture [196 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. TO-220 type A package outline<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 9. TO-220 type A package mechanical data** 

||**Table 9. TO-220 type Apackage mechanical data**|**Table 9. TO-220 type Apackage mechanical data**|**Table 9. TO-220 type Apackage mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Aug-2012|1|First release.|
|03-Dec-2015|2|Text and formatting changes throughout document<br>Updated_Section 1: Electrical ratings_<br>Updated_Section 2: Electrical characteristics_<br>Added:_Section 2.1: Electrical characteristics (curves)_<br>Added:_Section 3: Test circuits_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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