# Power MOSFET, N Channel, 600 V, 29 A, 0.092 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2098317/)

**URL**: https://novapart.co/products/STP34NM60N/power-mosfet-n-channel-600-v-29-a-0092-ohm-to-220
**SKU**: STP34NM60N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.6800
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 210W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 29A |
| Drain Source On State Resistance | 0.092ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098317/)

**STB34NM60N,** ¥f | augmented **STP34NM60N** N-channel 600 V, 0.092 Ω , 31.5 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages 

**Datasheet** - **production data** 

## **Features** 

**==> picture [169 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>2<br>3<br>3<br>1 2<br>1<br>D PAK2<br>TO-220<br>**----- End of picture text -----**<br>


|**Order codes**|**VDSS**|**RDS(on)**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB34NM60N|600 V|0.105Ω|31.5 A|250 W|
|STP34NM60N|||||



- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

## **Description** 

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STB34NM60N|34NM60N|D2PAK|Tape and reel|
|STP34NM60N||TO-220|Tube|



This is information on a product in full production. 

_www.st.com_ 

March 2015 

DocID17740 Rev 9 

1/17 

**Contents** 

**STB34NM60N, STP34NM60N** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||4.2<br>TO-220 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



2/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~<br>|**Value**<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|---|---|---|---|
|VDS<br>~~a~~<br>~~a ~~|Drain-source voltage<br>~~ee~~<br> ~~ee~~|600<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|VGS<br>~~a ~~|Gate-source voltage<br>|± 25|V<br>~~ee~~|
|ID<br>~~a~~|Drain current (continuous) at TC= 25 °C|31.5|A|
|ID<br>~~ee~~|Drain current (continuous) at TC= 100 °C<br>~~ee~~|20<br>~~po~~|A<br>~~po~~|
|IDM<br>(1)<br>~~a~~|Drain current (pulsed)|126|A|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|250|W|
|IAR|Max current during repetitive or single<br>pulse avalanche<br>(pulse width limited by Tjmax)|7|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|345|mJ|
|dv/dt(2)<br>~~a~~|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)<br>~~a~~<br>~~ee~~|MOSFET dv/dt ruggedness<br>|50<br>|V/ns<br>~~ee~~<br>|
|Tstg<br>~~ee~~|Storage temperature<br>|-55 to 150<br>~~ee~~<br>|°C<br>~~ee~~<br>~~ee~~<br>|
|Tj<br>~~eeDe~~|Max. operating junction temperature<br>~~De~~|150<br>~~De~~|°C<br>~~ee~~<br>~~De~~|



1. Pulse width limited by safe operating area. 

2. ISD ≤ 31.5 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS 

3. VDS ≤ 480 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK**|**TO-220**||
|Rthj-case|Thermal resistance junction-case max|0.5||°C/W|
|Rthj-amb|Thermal resistance junction-amb max||62.5||
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|**30**|||



1. When mounted on 1 inch² FR-4, 2 Oz copper board. 

DocID17740 Rev 9 

3/17 

**STB34NM60N, STP34NM60N** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

**==> picture [394 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Symbol|Parameter|Test conditions|Min.|Typ.|Max.|Unit|
|Drain-source breakdown|
|V(BR)DSS|voltage (VGS= 0)|ID = 1 mA|600|V|
|Zero gate voltage drain|VDS = 600 V|1|µA|
|IDSS|current (VGS = 0)|VDS = 600 V, Tc=125 °C|100|µA|
|Gate body leakage current|
|IGSS|(VDS = 0)|VGS = ± 25 V|±100|nA|
|VGS(th)|Gate threshold voltage|VDS = VGS, ID = 250 µA|2|3|4|V|
|Static drain-source on-|
|RDS(on)|resistance|VGS = 10 V, ID= 14.5 A|0.092|0.105|Ω|

**----- End of picture text -----**<br>


**Table 5. Dynamic** 

**==> picture [404 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Test conditions|Min.|Typ.|Max.|Unit|
|a|ee|
|Ciss|Input capacitance|-|2722|-|pF|
|—|=|
|Coss|Output capacitance|VDS =100 V, f=1 MHz, VGS=0|-|173|-|pF|
|Reverse transfer|
|Crss|capacitance|-|1.75|-|pF|
|+pp|ef||
|Coss eq.(1)|Equivalent capacitance time related|VGS = 0, VDS = 0 to 480 V|-|458|-|pF|
|ee|
|td(on)|Turn-on delay time|-|18|-|ns|
|tr|Rise time|VDD = 300 V, ID = 15.75 A,|-|36|-|ns|
|—|RG=4.7|Ω|, VGS=10 V|
|a|td(off)|Turn-off delay time|(see Figure 19 and 14)|=|-|104|-|ns|
|tf|Fall time|-|73|-|ns|
|a———|=SE|
|So|Qg|Total gate charge|VDD = 480 V, ID = 31.5 A|-|84|-|nC|
|a|Qgs|Gate-source charge|VGS =10 V|SE|-|14|-|nC|
|Qgd|Gate-drain charge|(see Figure 15)|-|45|-|nC|
|f = 1 MHz, gate DC Bias=0|
|RG|Intrinsic gate resistance|test signal level=20 mV|-|2.9|-|Ω|
|open drain|

**----- End of picture text -----**<br>


1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

4/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Electrical characteristics** 

**Table 6. Source drain diode** 

|**Symbol**<br>~~a~~|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~<br>~~ee~~<br>~~a~~|Source-drain current<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br>~~|~~<br>|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>|~~ee~~<br>~~|~~<br>|31.5<br>~~ee~~<br>~~ft~~<br>|A<br>~~ee~~<br>~~ft~~<br>|
|ISDM<br>(1)<br>~~a~~<br>~~ee~~<br>~~a~~|Source-drain current (pulsed)<br>~~ee~~<br>||-<br>~~ee~~<br>~~|~~<br>~~|~~<br>|~~ee~~<br>~~|~~<br>|126<br>~~ee~~<br>~~ft~~<br>|A<br>~~ee~~<br>~~ft~~<br>|
|VSD<br>(2)<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Forward on voltage<br>~~ee~~<br>~~eG~~<br>~~ee~~|ISD= 31.5 A, VGS=0<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~eG~~<br>~~|~~|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~eG~~<br>~~|~~<br>~~|~~|~~ee~~<br>~~|~~<br>~~eG~~<br>~~**|**~~|1.6<br>~~ee~~<br>~~ft~~<br>~~eG~~|V<br>~~ee~~<br>~~ft~~<br>~~eG~~|
|trr<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~eG~~<br>~~ee~~<br>~~ee~~|ISD= 31.5 A, VDD= 60 V<br>di/dt = 100 A/µs,<br>_(seeFigure 16)_<br>~~ee~~<br>~~|~~<br>~~eG~~<br>~~|~~<br>~~|~~<br>~~**|**~~|-<br>~~|~~<br>~~|~~<br>~~eG~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|412<br>~~|~~<br>~~eG~~<br>~~**|**~~<br>~~|~~|~~ft~~<br>~~eG~~<br>~~ft~~|ns<br>~~ft~~<br>~~eG~~<br>~~ft~~|
|Qrr<br><br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery charge<br>~~eG~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~||-<br>~~eG~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~**|**~~|8<br>~~eG~~<br>~~**|**~~<br>~~|~~<br>~~**|**~~|~~eG~~<br>~~ft~~|µC<br>~~eG~~<br>~~ft~~|
|IRRM<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~<br>~~**ee**~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~**|**~~|39<br>~~**|**~~<br>~~|~~<br>~~**|**~~<br>~~ft~~|~~ft~~<br>~~ft~~|A<br>~~ft~~<br>|
|trr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse recovery time<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|ISD= 31.5 A,VDD= 60 V<br>di/dt=100 A/µs,<br>Tj=150 °C<br>_(seeFigure 16)_<br>~~|~~<br>~~**|**~~<br>~~ee~~<br>~~**|**~~|-<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~**|**~~<br>~~**|**~~<br>||490<br>~~|~~<br>~~**|**~~<br>~~ft~~<br>**|**|~~ft~~<br>~~ftft~~|ns<br>~~ft~~<br>~~ft~~|
|Qrr<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse recovery charge<br>~~**ee**~~<br>~~ee~~||-<br>~~**|**~~<br>~~**|**~~<br>~~**|**~~<br>||10<br>~~**|**~~<br>~~ft~~<br>**|**<br>~~|~~|~~ftft~~<br>~~||~~|µC<br>~~ft~~<br>~~|~~|
|IRRM<br>~~ee~~<br>~~a~~|Reverse recovery current<br>~~ee~~||-<br>~~**|**~~<br>||43<br><br>**|**<br>~~|~~|~~ft~~<br>~~||~~|A<br>~~ft~~<br>~~|~~|



1. Pulse width limited by safe operating area 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 

DocID17740 Rev 9 

5/17 

**STB34NM60N, STP34NM60N** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Safe operating area<br>**----- End of picture text -----**<br>


## **Figure 3. Thermal impedance** 

**==> picture [434 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15706v1<br>(A) Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>100<br>10µs<br>10<br>100µs<br>1ms<br>10ms<br>1<br>0.1<br>0.1 1 10 100 VDS(V)<br>Figure 4. Output characteristics Figure 5. Transfer characteristics<br>AM09020v1 AM09021v1<br>ID(A) ID (A)<br>80 VGS=10V 80<br>VDS=20V<br>70 — TE 70 et<br>fr| | | | | | hl |<br>60 60<br>lati | ee<br>6V<br>50 50<br>ert | | | ft<br>40 40<br>fil ti i | ee<br>30 30<br>ft | ft tt | | | ft<br>20 20<br>fi | | | tt | | J 7} [ft]<br>5V<br>10 10<br>f+ tf | |jy]<br>0 0<br>0 ABE 5 10 15 20 25 30 VDS(V) 0 | | 2 Yi 4 6 f 8 VGS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 6. Gate charge vs gate-source voltage** 

## **Figure 7. Static drain-source on-resistance** 

**==> picture [423 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15701v1VDS (V) RDS(on) AM15702v1<br>(V) (Ω) VGS=10V<br>12 VDS VDD=480V<br>ID=31.5A 500 0.096<br>10 =} > pf tt<br>400 0.094<br>8 AR ZA | Ee<br>300 0.092<br>6 AA | Fe<br>200 0.09<br>4<br>ASSCare | EZS<br>2 100 0.088<br>ra ALLL TE<br>0 0 0.086<br>0 20 40 60 80 Qg(nC) 0 5 10 15 20 25 30 ID(A)<br>PREP) | PO<br>**----- End of picture text -----**<br>


6/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**==> picture [201 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM09024v1<br>(pF)<br>10000<br>Ciss<br>1000<br>Coss<br>100<br>10<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Output capacitance stored energy** 

**==> picture [196 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM09025v1<br>(µJ)<br>2<br>1<br>0<br>0 100 200 300 400 500 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [430 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM09026v1 RDS(on) AM15703v1<br>(norm) ID=250µA (norm)<br>2.1 ID=14.5A<br>1.10<br>NT LL 1.9 Ppp yy<br>1.00 1.7<br>1.5<br>PSH | | [| yf<br>0.90<br>1.3<br>0.80 ~\ | 1.1 FSH<br>0.9 / |<br>0.70 Frees | P|EEEEEEE | [A<br>0.7<br>0.60 PEELE LLINM 0.5 eana<br>-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized BVDSS vs temperature** 

**Figure 13. Source-drain diode forward characteristics** 

**==> picture [425 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS AM15704v1 VSD AM15705v1<br>(norm) ID=1mA (V)<br>1.07 TELL 1.4 TT ELLE<br>TJ=-50°C<br>1.05 1.2<br>COT eee<br>1.03 1 TJ=25°C<br>1.01 ||4 0.8 Sp ae<br>0.99 COT 0.6 a TJ=150°C an<br>0.950.97 TACPEELE ELE 0.40.2 aTHEE<br>0.93 CEE 0 TEE ee<br>-50 -25 0 25 50 75 100 TJ(°C) 0 5 10 15 20 25 30 ISD(A)<br>**----- End of picture text -----**<br>


DocID17740 Rev 9 

7/17 

**STB34NM60N, STP34NM60N** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for resistive load** 

**Figure 15. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


8/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 D[2] PAK package information** 

**==> picture [160 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. D²PAK (TO-263) outline<br>**----- End of picture text -----**<br>


DocID17740 Rev 9 

9/17 

**STB34NM60N, STP34NM60N** 

**Package information** 

**Table 7. D²PAK (TO-263) mechanical data** 

||**Table 7. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 7. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 7. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.40|~~ee~~|4.60|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~|1.14||1.70|
|c<br>~~a~~|0.45||0.60|
|c2<br>~~a~~<br>~~es~~|1.23||1.36|
|D<br>~~es~~|8.95||9.35|
|D1<br>~~es~~<br>~~a~~|7.50|7.75|8.00|
|D2<br>~~a~~|1.10|1.30|1.50|
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~|8.50|8.70|8.90|
|E2<br>~~a~~<br>~~es~~|6.85|7.05|7.25|
|e<br>~~es~~||2.54||
|e1<br>~~es~~<br>~~a~~|4.88||5.28|
|H<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~<br>~~es~~|1.27||1.40|
|L2<br>~~es~~|1.30||1.75|
|R<br>~~es~~<br>~~a~~||0.4||
|V2<br>~~a~~|0°||8°|



10/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Package information** 

**==> picture [135 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. D²PAK footprint [(a)]<br>**----- End of picture text -----**<br>


- a. All dimension are in millimeters 

DocID17740 Rev 9 

11/17 

**STB34NM60N, STP34NM60N** 

**Package information** 

## **4.2 TO-220 package information** 

**==> picture [154 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. TO-220 type A outline<br>**----- End of picture text -----**<br>


12/17 

DocID17740 Rev 9 

**STB34NM60N, STP34NM60N** 

**Package information** 

**Table 8. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a~~ øP 3.75 3.85 ~~Ge~~ Q 2.65 2.95 ~~Ge~~ 

DocID17740 Rev 9 

13/17 

**STB34NM60N, STP34NM60N** 

**Packing information** 

## **5 Packing information** 

**Table 9. D²PAK (TO-263) tape and reel mechanical data** 

|**Tape**<br>~~ee~~|**Tape**<br>~~ee~~|**Tape**<br>~~ee~~|**Reel**<br>~~ee~~|**Reel**<br>~~ee~~|**Reel**<br>~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~ee~~<br>~~a~~|**mm**<br>~~ee~~<br>~~ee~~<br>~~ee~~||**Dim.**<br>~~ee~~<br>~~ee~~|**mm**<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~a~~|**Max.**<br>~~aee~~||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|10.5<br>|10.7<br>~~ee~~|A<br>~~ee~~|~~ee~~|330<br>~~ee~~|
|B0<br>~~a~~|15.7<br>~~ee~~|15.9<br>~~ee~~|B<br>~~ee~~|1.5<br>~~ee~~|~~ee~~|
|D<br>~~a~~|1.5|1.6|C|12.8|13.2|
|D1<br>~~a~~|1.59|1.61|D|20.2||
|E<br>~~a~~|1.65|1.85|G|24.4|26.4|
|F<br>~~a~~|11.4|11.6|N|100||
|K0<br>~~a~~|4.8|5.0|T||30.4|
|P0<br>~~a~~|3.9|4.1||||
|P1<br>~~a~~|11.9|12.1|Base qty||1000|
|P2<br>~~a~~<br>~~a~~|1.9<br><br>|2.1<br><br>~~ee~~<br>|Bulk qty||1000|
|R<br>~~ee~~<br>~~a~~|50<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br>||||
|T<br>~~a ee~~|0.25<br>~~ee~~|0.35<br>~~ee~~<br>~~ee~~||||
|W<br>~~ee~~|23.7<br>~~ee~~|24.3<br>~~ee~~||||



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**Packing information** 

## **Figure 23. Tape** 

**==> picture [350 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>000 80 000 8 00<br>F<br>K0 W<br>B0<br>A0 P1 D1<br>————_<br>User direction of feed<br>R<br>¢/¢ ¢/¢ ¢/4 ¢/4 4/4 ¢<br>erates<br>DDD a |<br>—_> Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


## **Figure 24. Reel** 

**==> picture [377 x 249] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


DocID17740 Rev 9 15/17 ~~OO~~ 

**STB34NM60N, STP34NM60N** 

**Revision history** 

## **6 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Aug-2010|1|Initial release.|
|02-Sep-2010|2|Updated title on cover page and_Table 4: On/off states_.|
|07-Apr-2011|3|Document status promoted from preliminary data to datasheet.|
|10-Oct-2011|4|Inserted new device in D2PAK:<br>Updated:_Table 2: Absolute maximum ratings_,_Table 3: Thermal_<br>_data_and_Section 4: Package information_with the new device.<br>Inserted_Section 5: Packing information_.<br>Minor text changes.|
|12-Dec-2011|5|– _Figure 9: Output capacitance stored energy_has been<br>updated.<br>– _Figure 10: Normalized gate threshold voltage vs temperature_<br>has been updated.<br>– _Figure 11: Normalized on-resistance vs temperature_has<br>been updated.<br>– _Figure 12: Normalized BVDSS vs temperature_has been<br>updated.|
|21-Dec-2011|6|Updated:_Table 2: Absolute maximum ratings_(VISOvalue for<br>TO-220FP)|
|10-May-2012|7|_Figure 6: Gate charge vs gate-source voltage_has been<br>updated.|
|01-Jul-2013|8|– The part number STF34NM60N has been moved to a<br>separate datasheet.<br>– Added: MOSFET ruggedness parameter and_3_on_Table 2_<br>– Modified: IDvalue on_Table 5_and typical values for td(on), tr,<br>td(off)and tf, max values for ISDand ISDM, ISDfor VSD, typical<br>value and ISDfor trr<br>– Modified:_Figure 6_,_7_,_12_and_13_<br>– Minor text changes|
|20-Mar-2015|9|– The part number STW34NM60N has been moved to a<br>separate datasheet.<br>– Updated_Section 4: Package information_.<br>– Minor text changes.|



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**STB34NM60N, STP34NM60N** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

DocID17740 Rev 9 

17/17 



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---

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