# Power MOSFET, N Channel, 600 V, 26 A, 0.108 ohm, TO-220AB, Through Hole ![Product image](https://novapart.co/image/farnell:2807295/) **URL**: https://novapart.co/products/STP33N60M2/power-mosfet-n-channel-600-v-26-a-0108-ohm-to **SKU**: STP33N60M2 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.5900 **Stock**: 1000+ **Lead Time**: 127 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | MDmesh II Plus | | Qualification | - | | Power Dissipation | 190W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220AB | | Drain Source Voltage Vds | 600V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 26A | | Drain Source On State Resistance | 0.108ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2807295/) ## **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Q g Power MOSFETs in TO-220FP, I[2] PAK, TO-220 and TO-247 packages **Datasheet** - **production data** **==> picture [144 x 131] intentionally omitted <==** **----- Start of picture text -----**
TAB
1 [2] [3] 2 3
I PAK2 TO-220FP 1
TAB
nd 1 2 3 1 2 3
TO-220
TO-247
**----- End of picture text -----**
## **Features** |**Order codes**|**VDS@ **
**TJmax**|**RDS(on)**
**max**|**ID**| |---|---|---|---| |STF33N60M2|650 V|0.125Ω|26 A(1)| |STI33N60M2|||26 A| |STP33N60M2|||| |STW33N60M2|||| 1. Limited by maximum junction temperature. - Extremely low gate charge - Lower RDS(on) x area vs previous generation ## **Figure 1. Internal schematic diagram** , TAB - MDmesh™ II technology - Low gate input resistance - 100% avalanche tested - Zener-protected ## **Applications** - Switching applications - LCC converters, resonant converters ## **Description** **==> picture [29 x 5] intentionally omitted <==** **----- Start of picture text -----**
AM15572v1
**----- End of picture text -----**
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. **Table 1. Device summary** |**Order codes**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2|33N60M2|TO-220FP|Tube| |||I2PAK|| |||TO-220|| |||TO-247|| This is information on a product in full production. _www.st.com_ |**Contents**|**STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**| 2/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical ratings** ## **1 Electrical ratings** **Table 2. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |||**I2PAK, TO-220**
**TO-247**|**TO-220FP**|| |VGS|Gate-source voltage|± 25||V| |ID|Drain current (continuous) at TC= 25 °C|26|26(1)|A| |ID|Drain current (continuous) at TC= 100 °C|16|16(1)|A| |IDM
(2)|Drain current (pulsed)|104|104(1)|A| |PTOT|Total dissipation at TC= 25 °C|190|35|W| |dv/dt(3)|Peak diode recovery voltage slope|15||V/ns| |dv/dt(4)|MOSFET dv/dt ruggedness|50||V/ns| |VISO|Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)||2500|V| |Tstg|Storage temperature|- 55 to 150||°C| |Tj|Max. operating junction temperature|||| 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 26 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V. 4. VDS ≤ 480 V **Table 3. Thermal data** |**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---| |||**TO-220FP**|**I2PAK,**
**TO-220**|**TO-247**|| |Rthj-case|Thermal resistance junction-case max|3.6|0.66||°C/W| |Rthj-amb|Thermal resistance junction-ambient max|62.5||50|°C/W| ## **Table 4. Avalanche characteristics** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |IAR|Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)|5|A| |EAS|Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)|2300|mJ| DocID024298 Rev 2 3/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical characteristics** ## **2 Electrical characteristics** (TC = 25 °C unless otherwise specified) **Table 5. On /off states** |||**Table 5. On /off states**||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0|600|||V| |IDSS|Zero gate voltage
drain current (VGS= 0)|VDS= 600 V
VDS= 600 V, TC=125 °C|||1
100|µA
µA| |IGSS|Gate-body leakage
current (VDS= 0)|VGS= ± 25 V|||±10|µA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V| |RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 13 A||0.108|0.125|Ω| **Table 6. Dynamic** |||**Table 6. Dynamic**||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0|-|1781|-|pF| |Coss|Output capacitance||-|85|-|pF| |Crss|Reverse transfer
capacitance||-|2.5|-|pF| |Coss eq.
(1)|Equivalent output
capacitance|VDS= 0 to 480 V, VGS= 0|-|135|-|pF| |RG|Intrinsic gate
resistance|f = 1 MHz open drain|-|5.2|-|Ω| |Qg|Total gate charge|VDD= 480 V, ID= 26 A,
VGS= 10 V
(see_Figure 19_)|-|45.5|-|nC| |Qgs|Gate-source charge||-|9.9|-|nC| |Qgd|Gate-drain charge||-|18.5|-|nC| 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS **Table 7. Switching times** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |td(on)|Turn-on delay time|VDD= 300 V, ID= 13 A,
RG= 4.7Ω,VGS= 10 V
(see_Figure 18_and
_Figure 23_)|-|16|-|ns| |tr(v)|Voltage rise time||-|9.6|-|ns| |td(off)|Turn-off-delay time||-|109|-|ns| |tf(i)|Fall time||-|9|-|ns| 4/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical characteristics** **Table 8. Source drain diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ISD|Source-drain current||-||26|A| |ISDM (1)|Source-drain current (pulsed)||-||104|A| |VSD (2)|Forward on voltage|ISD= 26 A, VGS= 0|-||1.6|V| |trr|Reverse recovery time|ISD= 26 A, di/dt = 100 A/µs
VDD= 60 V (see_Figure 23_)|-|375||ns| |Qrr|Reverse recovery charge||-|5.6||µC| |IRRM|Reverse recovery current||-|30||A| |trr|Reverse recovery time|ISD= 26 A, di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C
(see_Figure 23_)|-|478||ns| |Qrr|Reverse recovery charge||-|7.7||µC| |IRRM|Reverse recovery current||-|32.5||A| 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024298 Rev 2 5/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** ## **Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM17917v1
(A)
100
10
10µs
100µs
1 1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
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**Figure 4. Safe operating area for I[2] PAK and TO-220** **==> picture [173 x 167] intentionally omitted <==** **Figure 5. Thermal impedance for I[2] PAK and TO-220** **==> picture [462 x 370] intentionally omitted <==** **----- Start of picture text -----**
ID AM17906v1
(A)
100
10 10µs
100µs
1ms
1 10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1 1 10 100 VDS(V)
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
ID AM17918v1
(A)
100
10µs
10
100µs
1ms
1 10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1 1 10 100 VDS(V)
DS(on)
Operation in this area is
Limited by max R
DS(on)
Operation in this area is
Limited by max R
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6/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical characteristics** **Figure 8. Output characteristics** ## **Figure 9. Transfer characteristics** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
AM17907v1 AM17908v1
ID(A) VGS=7, 8, 9, 10V (A)ID
6V VDS=17V
60 60
50 50
40 40
5V
30 30
20 20
10 10
4V
0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)
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## **Figure 10. Gate charge vs gate-source voltage** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VGS AM17909v1
VDS
(V)
VDD=480V (V)
12
ID=26A 500
VDS
10
400
8
300
6
200
4
100
2
0 0
0 10 20 30 40 50 Qg(nC)
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**Figure 12. Capacitance variations** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
C AM17911v1
(pF)
10000
Ciss
1000
100
Coss
10
Crss
1
0.1 1 10 100 VDS(V)
**----- End of picture text -----**
## **Figure 11. Static drain-source on-resistance** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM17910v1
RDS(on)
(Ω)
VGS=10V
0.114
0.112
0.110
0.108
0.106
0.104
0 5 10 15 20 25 ID(A)
**----- End of picture text -----**
**Figure 13. Output capacitance stored energy** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
Eoss AM17912v1
(µJ)
12
10
8
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
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DocID024298 Rev 2 7/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM17913v1
(norm)
ID=250µA
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 TJ(°C)
**----- End of picture text -----**
**Figure 16. Normalized VDS vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VDS AM17915v1
(norm)
ID=1mA
1.09
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
0.91
-50 -25 0 25 50 75 100 TJ(°C)
**----- End of picture text -----**
**Figure 15. Normalized on-resistance vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
RDS(on) AM17914v1
(norm)
I D =13A
VDS=10V
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 TJ(°C)
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**Figure 17. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM17916v1
VSD (V)
1.2
1.4
TJ=-50°C
1
0.8
0.6 TJ=25°C
TJ=150°C
0.4
0.2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 ISD(A)
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8/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Test circuits** ## **3 Test circuits** **Figure 18. Switching times test circuit for resistive load** **Figure 19. Gate charge test circuit** **==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times** **==> picture [462 x 346] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
�� ton toff
�� tdon tr tdoff tf
90% 90%
��
10%
�� 0 10% VDS
�� 90%
VGS
�� 0 10% AM01473v1
**----- End of picture text -----**
DocID024298 Rev 2 9/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 10/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** **Table 9. TO-220FP mechanical data** ||**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.4||4.6| |B|2.5||2.7| |D|2.5||2.75| |E|0.45||0.7| |F|0.75||1| |F1|1.15||1.70| |F2|1.15||1.70| |G|4.95||5.2| |G1|2.4||2.7| |H|10||10.4| |L2||16|| |L3|28.6||30.6| |L4|9.8||10.6| |L5|2.9||3.6| |L6|15.9||16.4| |L7|9||9.3| |Dia|3||3.2| DocID024298 Rev 2 11/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** ## **Figure 24. TO-220FP drawing** **==> picture [405 x 577] intentionally omitted <==** **----- Start of picture text -----**
7012510_Rev_K_B
**----- End of picture text -----**
12/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** **Table 10. I²PAK (TO-262) mechanical data** ||**Table 10. I²PAK(TO-262) mechanical data**|**Table 10. I²PAK(TO-262) mechanical data**|**Table 10. I²PAK(TO-262) mechanical data**| |---|---|---|---| |**DIM.**|**mm.**||| ||**min.**|**typ**|**max.**| |A|4.40||4.60| |A1|2.40||2.72| |b|0.61||0.88| |b1|1.14||1.70| |c|0.49||0.70| |c2|1.23||1.32| |D|8.95||9.35| |e|2.40||2.70| |e1|4.95||5.15| |E|10||10.40| |L|13||14| |L1|3.50||3.93| |L2|1.27||1.40| ## **Figure 25. I²PAK (TO-262) drawing** **==> picture [34 x 35] intentionally omitted <==** 0004982_Rev_H DocID024298 Rev 2 13/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** **Table 11. TO-220 type A mechanical data** ||**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**|**Table 11. TO-220 type A mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| 14/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** ## **Figure 26. TO-220 type A drawing** DocID024298 Rev 2 15/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** **Table 12. TO-247 mechanical data** ||**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**| |---|---|---|---| |**Dim.**|**mm.**||| ||**Min.**|**Typ.**|**Max.**| |A|4.85||5.15| |A1|2.20||2.60| |b|1.0||1.40| |b1|2.0||2.40| |b2|3.0||3.40| |c|0.40||0.80| |D|19.85||20.15| |E|15.45||15.75| |e|5.30|5.45|5.60| |L|14.20||14.80| |L1|3.70||4.30| |L2||18.50|| |∅P|3.55||3.65| |∅R|4.50||5.50| |S|5.30|5.50|5.70| 16/19 DocID024298 Rev 2 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Package mechanical data** ## **Figure 27. TO-247 drawing** **==> picture [405 x 398] intentionally omitted <==** **----- Start of picture text -----**
0075325_G
**----- End of picture text -----**
DocID024298 Rev 2 17/19 **STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2** **Revision history** ## **5 Revision history** **Table 13. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |13-Sep-2013|1|First release.| |19-Nov-2013|2|– Modified: RDS(on)and IDvalues in cover page
– Modified: values in_Table 4_
– Modified: RDS(on)typical and maximum values in_Table 5_, the
entire typical values in_Table 6_,_7_and_8_
– Added:_Section 2.1: Electrical characteristics (curves)_
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