# Power MOSFET, Mdmesh DM2, N Channel, 600 V, 24 A, 0.11 ohm, TO-220, Through Hole
**URL**: https://novapart.co/products/STP33N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-24-a-011
**SKU**: STP33N60DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9000
**Stock**: 10+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.11ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2531111/)
life.augmented **STB33N60DM2, STP33N60DM2, STW33N60DM2** N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
## **Features**
|**Order code**|**VDS @ TJmax.**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STB33N60DM2|650 V|0.130 Ω|24 A|
|STP33N60DM2|650 V|0.130 Ω|24 A|
|STW33N60DM2|650 V|0.130 Ω|24 A|
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
**Figure 1: Internal schematic diagram**
- Zener-protected
## **Applications**
- Switching applications
## **Description**
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB33N60DM2|33N60DM2|D²PAK|Tape and reel|
|STP33N60DM2|33N60DM2|TO-220|Tube|
|STW33N60DM2|33N60DM2|TO-247|Tube|
November 2015
DocID026854 Rev 2
1/20
This is information on a product in full production.
_www.st.com_
|**Contents**
**STB33N60DM2, STP33N60DM2, STW33N60DM2**|**Contents**
**STB33N60DM2, STP33N60DM2, STW33N60DM2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1
D²PAK package information ............................................................ 10|
||4.2
D²PAK packing information ............................................................. 13|
||4.3
TO-220 type A package information ................................................ 15|
||4.4
TO-247 package information ........................................................... 17|
|**5**|**Revision history ............................................................................ 19**|
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**STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at Tcase= 25 °C|24|A|
||Drain current (continuous) at Tcase= 100 °C|15.5||
|IDM_(1)_|Drain current (pulsed)|96|A|
|PTOT|Total dissipation at Tcase= 25 °C|190|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|50|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|||
## **Notes:**
- (1) Pulse width is limited by safe operating area.
- (2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
- (3) VDS ≤ 480 V.
**Table 3: Thermal data**
|**Symbol**|**Parameter**||**Value**||**Unit**|
|---|---|---|---|---|---|
|||**D²PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistancejunction-case||0.66||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb_(1)_|30||||
|Rthj-amb|Thermal resistance junction-ambient||62.5|50||
## **Notes:**
- (1)When mounted on 1 inch² FR-4, 2 Oz copper board.
**Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (Pulse width limited byTjmax)|5.5|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR, VDD= 50 V)|570|mJ|
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**STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Electrical characteristics**
## **2 Electrical characteristics**
(Tcase = 25 °C unless otherwise specified)
**Table 5: Static**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,
Tcase= 125 °C|||100||
|IGSS|Gate-bodyleakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 12 A||0.110|0.130|Ω|
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|1870|-|pF|
|Coss|Output capacitance||-|87|-||
|Crss|Reverse transfer
capacitance||-|2|-||
|Coss eq._(1)_|Equivalent output
capacitance|VDD= 480 V, VGS= 0 V|-|157|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID= 0 A|-|4.5|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 24 A,
VGS= 10 V (see_Figure 19:_
_"Test circuit for gate charge_
_behavior"_and_Figure 23:_
_"Switching time waveform"_)|-|43|-|nC|
|Qgs|Gate-source charge||-|9.8|-||
|Qgd|Gate-drain charge||-|21|-||
## **Notes:**
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 12 A
RG= 4.7 Ω, VGS= 10 V (see
_Figure 18: "Test circuit for_
_resistive load switching_
_times"_and )|-
-
-
-|17|-|ns|
|tr|Rise time|||8|-||
|td(off)|Turn-off delaytime|||62|-||
|tf|Fall time|||9|-||
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**Electrical characteristics**
## **STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Table 8: Source-drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||24|A|
|ISDM_(1)_|Source-drain current (pulsed)||-||96|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 24 A|-||1.6|V|
|trr|Reverse recoverytime|ISD= 24 A, di/dt = 100 A/µs,
VDD= 60 V (see_Figure 20:_
_"Test circuit for inductive_
_load switching and diode_
_recovery times"_)|-|150||ns|
|Qrr|Reverse recoverycharge||-|0.5||µC|
|IRRM|Reverse recovery current||-|8.8||A|
|trr|Reverse recoverytime|ISD= 24 A, di/dt = 100 A/µs,
VDD= 60 V, Tj= 150 °C
(see_Figure 20: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|316||ns|
|Qrr|Reverse recoverycharge||-|2.85||µC|
|IRRM|Reverse recovery current||-|18||A|
## **Notes:**
- (1) Pulse width is limited by safe operating area.
- (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
**Table 9: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ±250µA, ID= 0 A|±30|-|-|V|
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Safe operating area for D²PAK**
**==> picture [174 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Figure 3: Thermal impedance for D²PAK
**----- End of picture text -----**
**==> picture [153 x 142] intentionally omitted <==**
**----- Start of picture text -----**
K
Se δ=0.5 Se Seat eS act
i
0.2
0.1
10 [-1] 0.05
0.02
Z th = K*R thj-c
δ= tp/ Ƭ
0.01
BF Single pulse
tp Ƭ
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tP(s)
**----- End of picture text -----**
**Figure 4: Safe operating area for TO-220**
**Figure 5: Thermal impedance for TO-220**
**==> picture [153 x 142] intentionally omitted <==**
**----- Start of picture text -----**
K
δ=0.5 ye
0.2
0.1
10 [-1] 0.05
0.02
Z th = K*R thj-c
δ= tp/ Ƭ
Ba 0.01
Single pulse
tp Ƭ
10 [-2]
10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tP(s)
**----- End of picture text -----**
**Figure 6: Safe operating area for TO-247**
**Figure 7: Thermal impedance for TO-247**
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**Electrical characteristics**
## **STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Figure 8: Output characteristics**
**==> picture [156 x 142] intentionally omitted <==**
**Figure 9: Transfer characteristics**
**==> picture [157 x 142] intentionally omitted <==**
**==> picture [394 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 10: Gate charge vs gate-source
Figure 11: Static drain-source on-resistance
voltage
**----- End of picture text -----**
**==> picture [389 x 180] intentionally omitted <==**
**----- Start of picture text -----**
Figure 13: Normalized gate threshold voltage
Figure 12: Capacitance variations
vs temperature
**----- End of picture text -----**
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## **Electrical characteristics**
## **STB33N60DM2, STP33N60DM2, STW33N60DM2**
**==> picture [398 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Normalized on-resistance vs Figure 15: Normalized V(BR)DSS vs
temperature temperature
**----- End of picture text -----**
**==> picture [408 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 17: Source- drain diode forward
Figure 16: Output capacitance stored energy
characteristics
**----- End of picture text -----**
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 580] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18: Test circuit for resistive load Figure 19: Test circuit for gate charge
switching times behavior
Figure 20: Test circuit for inductive load
switching and diode recovery times Figure 21: Unclamped inductive load test
circuit
Figure 23: Switching time waveform
Figure 22: Unclamped inductive waveform
**----- End of picture text -----**
**==> picture [21 x 8] intentionally omitted <==**
**----- Start of picture text -----**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 D²PAK package information**
**Figure 24: D²PAK (TO-263) type A package outline**
**==> picture [407 x 497] intentionally omitted <==**
**----- Start of picture text -----**
0079457_A_rev22
**----- End of picture text -----**
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**Package information**
**Table 10: D²PAK (TO-263) type A package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|
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**Package information STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Figure 25: D²PAK (TO-263) recommended footprint (dimensions are in mm)**
**==> picture [407 x 344] intentionally omitted <==**
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**Package information**
## **4.2 D²PAK packing information**
**Figure 26: Tape outline**
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**STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Package information**
**Figure 27: Reel outline**
**Table 11: D²PAK tape and reel mechanical data**
|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||
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**Package information**
## **4.3 TO-220 type A package information**
**Figure 28: TO-220 type A package outline**
**==> picture [407 x 570] intentionally omitted <==**
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**Package information STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Table 12: TO-220 type A mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
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**Package information**
## **4.4 TO-247 package information**
**Figure 29: TO-247 package outline**
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## **Package information STB33N60DM2, STP33N60DM2, STW33N60DM2**
**Table 13: TO-247 package mechanical data**
|**Dim.**||**mm.**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|
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**Revision history**
## **5 Revision history**
**Table 14: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Oct-2014|1|First release.|
|02-Nov-2015|2|Document status promoted from preliminary to production data.
Updated title and features in cover page.
Updated_Table 2: "Absolute maximum ratings"_,_Table 4: "Avalanche_
_characteristics"_,_Table 5: "Static"_,_Table 6: "Dynamic"_,_Table 7:_
_"Switching times"_and_Table 8: "Source-drain diode"_.
Added_Section 2.1 Electrical characteristics (curves)._|
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**STB33N60DM2, STP33N60DM2, STW33N60DM2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2015 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STP33N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-24-a-011)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp33n60dm2/mosfet-n-ch-600v-24a-to-220/dp/2531111)
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