# Power MOSFET, N Channel, 800 V, 2 A, 3.5 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807294/)

**URL**: https://novapart.co/products/STP2N80K5/power-mosfet-n-channel-800-v-2-a-35-ohm-to-220ab
**SKU**: STP2N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3530
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 3.5ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807294/)

## **STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages 

− **Datasheet production data** 

## **Features** 

**==> picture [188 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>DPAK 3<br>2<br>1<br>TAB<br>TO-220FP<br>TAB<br>3 3<br>2 2<br>1 1<br>TO-220 IPAK<br>**----- End of picture text -----**<br>


**Figure 1. Internal schematic diagram** 

**==> picture [85 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
AM01476v1<br>**----- End of picture text -----**<br>


|**Features**|||||
|---|---|---|---|---|
|**Order codes**|**VDS**|**RDS(on)max**|**ID**|**PTOT**|
|STD2N80K5|800 V|4.5Ω|2 A|45 W|
|STF2N80K5||||20 W|
|STP2N80K5||||45 W|
|STU2N80K5|||||



- Industry’s lowest RDS(on) * area 

- Industry’s best figure of merit (FoM) 

- Ultra low gate charge 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STD2N80K5|2N80K5|DPAK|Tape and reel|
|STF2N80K5||TO-220FP|Tube|
|STP2N80K5||TO-220||
|STU2N80K5||IPAK||



September 2015 

DocID024993 Rev 3 

1/22 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>DPAK (TO-252) type A package information  . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.3<br>TO-220 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||4.4<br>IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . 17|
|**5**|**Packaging information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|



2/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~|~~|**Parameter**<br>~~|~~|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**DPAK,**<br>**TO-220,**<br>**IPAK**|**TO-220FP**||
|VGS<br>~~a~~|Gate- source voltage<br>~~a~~|30<br>||V<br>|
|ID<br><br>~~a~~|Drain current (continuous) at TC= 25 °C<br>|2(1)<br>~~po~~||A<br>~~po~~|
|ID|Drain current (continuous) at TC= 100 °C|1.3||A|
|IDM<br>(2)<br>~~a~~|Drain current (pulsed)|8<br>~~po~~||A<br>~~po~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|45|20|W|
|IAR|Max current during repetitive or single pulse<br>avalanche (pulse width limited by Tjmax)|0.5||A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|60.5||mJ|
|dv/dt(3)<br>~~a~~|Peak diode recovery voltage slope|4.5<br>~~po~~||V/ns<br>~~po~~|
|dv/dt(4)<br>~~aSSS~~|MOSFET dv/dt ruggedness<br>~~SSS~~|50||V/ns|
|Tj<br>~~SSS~~<br>~~a~~|Operating junction temperature<br>~~SSS~~|-55 to 150<br>~~|~~||°C<br>~~|~~|
|Tstg<br>~~SSS~~<br>~~a~~|Storage temperature<br>~~SSS~~|||°C<br>~~|~~|



1. For TO-220FP limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 2 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS 

4. VDS ≤ 640 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**DPAK**|**TO-220FP **|**TO-220 **|**IPAK**||
|Rthj-case|Thermal resistance junction-case|2.78|6.25|2.78|2.78|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb|50(1)|||||
|Rthj-amb|Thermal resistance junction-amb||62.5||100||



1. When mounted on FR-4 board of 1 inch², 2 oz Cu. 

DocID024993 Rev 3 

3/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>ee|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-source breakdown<br>voltage (VGS= 0)<br>~~es~~|ID= 1 mA<br>~~ee~~|800<br>ee|~~ee~~|~~ee~~|V<br>~~ee~~|
|IDSS<br>~~ee~~|Zero gate voltage drain<br>current (VGS= 0)<br>~~es~~<br>~~ee~~|VDS= 800 V<br>~~ee~~|~~ee~~|~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
|||VDS= 800 V TC=125 °C<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~i~~<br>~~a~~|Gate body leakage current<br>(VDS= 0)<br>~~i~~|VGS= ± 20 V<br>~~ee~~<br>~~a~~|~~ee~~|~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate threshold voltage<br>~~a~~<br>~~es~~|VDS= VGS, ID= 100 µA<br>~~a~~<br>~~a~~|3<br>~~a~~|4<br>~~a~~|5<br>~~a~~|V<br>~~a~~|
|RDS(on)<br>~~a~~|Static drain-source on-<br>resistance<br>~~es~~|VGS= 10 V, ID= 1 A<br>~~a~~||3.5|4.5|Ω|



**Table 5. Dynamic** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~eee~~|**Test conditions**<br>~~eee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a~~<br>~~>~~<br>~~——~~|Input capacitance<br>~~eee~~<br>~~>~~<br>~~——~~|VDS=100 V, f=1 MHz, VGS=0<br>~~eee~~<br>~~>~~<br>~~=~~<br>~~>~~<br>~~=~~<br>~~xR:~~|-<br>~~ee~~<br>~~>~~<br>~~=~~<br>~~xR:~~|105<br>~~ee~~<br>~~>~~<br>~~=~~<br>~~xR:~~|-<br>~~ee~~<br>~~>~~<br>~~=~~<br>~~xR:~~|pF<br>~~ee~~<br>~~>~~<br>~~=~~<br>~~xR:~~|
|Coss<br>~~>~~<br>~~——~~|Output capacitance<br>~~>~~<br>~~——~~||-<br>~~>~~<br>~~=~~<br>~~xR:~~|8<br>~~>~~<br>~~=~~<br>~~xR:~~|-<br>~~>~~<br>~~=~~<br>~~xR:~~|pF<br>~~>~~<br>~~=~~<br>~~xR:~~|
|Crss<br>~~——~~|Reverse transfer<br>capacitance<br>~~——~~||-<br>~~xR:~~|0.5<br>~~xR:~~|-<br>~~xR:~~|pF<br>~~xR:~~|
|Co(tr)<br>(1)<br>~~of~~|Equivalent capacitance time<br>related<br>~~ee~~<br>~~of~~|VGS= 0, VDS= 0 to 640 V<br>~~ee~~<br>~~Pt~~|-<br>~~ee~~<br>~~Pt~~|16<br>~~ee~~<br>~~Ptty~~|-<br>~~ee~~<br>~~ty~~|pF<br>~~ee~~<br>~~ty~~|
|Co(er)<br>(2)<br>~~of~~|Equivalent capacitance<br>energy related<br>~~ee~~<br>~~of~~||-<br>~~ee~~<br>~~Pt~~|7<br>~~ee~~<br>~~Ptty~~|-<br>~~ee~~<br>~~ty~~|pF<br>~~ee~~<br>~~ty~~|
|RG<br>~~a~~|Intrinsic gate resistance<br>~~a~~|f = 1 MHz, ID=0<br>~~Pt~~<br>~~a~~|-<br>~~Pt~~<br>~~a~~|18<br>~~Pt ty~~<br>~~a~~|-<br>~~ty~~<br>~~a~~|Ω<br>~~ty~~<br>~~a~~|
|Qg<br>~~—~~|Total gate charge<br>~~—~~|VDD= 640 V, ID= 2 A<br>VGS=10 V<br>~~—~~<br>~~—~~<br>~~7~~<br>~~=~~|-<br>~~—~~|5<br>~~—~~|-<br>~~—~~|nC<br>~~—~~|
|Qgs<br>~~—~~|Gate-source charge<br>~~—~~||-<br>~~—~~<br>~~7~~|1<br>~~—~~<br>~~7~~|-<br>~~—~~<br>~~7~~|nC<br>~~—~~<br>~~7~~|
|Qgd<br>~~>~~|Gate-drain charge<br>~~>~~||-<br>~~=~~|3.7<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|



2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

4/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical characteristics** 

**Table 6. Switching times** 

||**Table 6. Switching times**|**Table 6. Switching timesg times times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 400 V, ID= 1 A,<br>RG=4.7Ω, VGS=10 V|-|8|-|ns|
|tr|Rise time||-|12|-|ns|
|td(off)|Turn-off delay time||-|19|-|ns|
|tf|Fall time||-|32|-|ns|



**Table 7. Source drain diode** 

|**Symbol**<br>~~—_—_§_—_—_~~|**Parameter**<br>~~—_—_§_—_—_~~|**Test conditions**<br>~~—_—_§_—_—_~~|**Min.**<br>~~—_—_§_—_—_~~|**Typ.**<br>~~—_—_§_—_—_~~|**Max.**<br>~~—_—_§_—_—_~~|**Unit**<br>~~—_—_§_—_—_~~|
|---|---|---|---|---|---|---|
|ISD<br>~~—_—_§_—_—_~~|Source-drain current<br>~~—_—_§_—_—_~~|~~—_—_§_—_—_~~|-<br>~~—_—_§_—_—_~~|~~—_—_§_—_—_~~|2<br>~~—_—_§_—_—_~~|A<br>~~—_—_§_—_—_~~|
|ISDM<br>(1)|Source-drain current (pulsed)||-||8|A|
|VSD<br>(2)|Forward on voltage|ISD= 2 A, VGS=0|-||1.5|V|
|trr|Reverse recovery time|ISD= 2 A, VDD= 60 V<br>di/dt = 100 A/µs,|-|255||ns|
|Qrr|Reverse recovery charge||-|1||µC|
|IRRM|Reverse recovery current||-|8||A|
|trr<br>~~a~~|Reverse recovery time<br>~~a~~|ISD= 2 A,VDD= 60 V<br>di/dt=100 A/µs,<br>Tj=150 °C<br>~~a~~|-<br>~~a~~|285<br>~~a~~|~~a~~|ns<br>~~a~~|
|Qrr<br>~~a~~|Reverse recovery charge<br>~~a~~||-<br>~~a~~|1.45<br>~~a~~|~~a~~|µC<br>~~a~~|
|IRRM<br>~~a~~|Reverse recovery current<br>~~a~~||-<br>~~a~~|7.5<br>~~a~~|~~a~~|A<br>~~a~~|



**Table 8. Gate-source Zener diode** 

**Symbol Parameter Test conditions Min. Typ. Max. Unit** ~~—__—_§~~ V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V 

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. 

DocID024993 Rev 3 

5/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [438 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Safe operating area for DPAK and  Figure 3. Thermal impedance for DPAK and<br>IPAK IPAK<br>ID AM18072v1<br>(A)<br>10<br>10ms<br>1 100μs<br>1ms<br>0.1 10ms<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01 of Go<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for TO-220FP** 

**==> picture [204 x 368] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18073v1<br>(A)<br>10<br>== aan<br>10μs<br>1<br>100μs<br>1ms<br>0.1 4 10ms<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>gure 6. Safe operating area for TO-220ure 6. Safe operating area for TO-220perating area for TO-220erating area for TO-220g area for TO-220 area for TO-220<br>ID AM18074v1<br>(A)<br>10μs<br>1 Th. My ‘ 100μs<br>see<br>1ms<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25 ° C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Safe operating area for TO-220ure 6. Safe operating area for TO-220perating area for TO-220erating area for TO-220g area for TO-220 area for TO-220** 

**Figure 5. Thermal impedance for TO-220FP** 

**Figure 7. Thermal impedance for TO-220** 

6/22 DocID024993 Rev 3 ~~SL~~ 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical characteristics** 

**Figure 8. Output characteristics** 

**==> picture [200 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18075v1<br>ID(A) VGS=10, 11V<br>3.0<br>2.5<br>9V<br>2.0<br>1.5<br>8V<br>1.0<br>0.5 7V<br>6V<br>0.0<br>0 2 4 6 8 10 12 14 16 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 9. Transfer characteristics** 

**==> picture [194 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18085v1<br>ID<br>(A)<br>VDS=20V<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>5 6 7 8 9 10 VGS(V)<br>**----- End of picture text -----**<br>


**==> picture [458 x 384] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance<br>VGS AM18076v1 RDS(on) AM18077v1<br>VDS<br>(V) (Ω)<br>VDD = 640 V (V) VGS=10V<br>14 700<br>VDS ID = 2 A<br>12 600 6<br>10 500<br>8 400 4<br>6 300<br>4 200 2<br>2 100<br>0 0 0<br>Pele 0 1 2 3 4 5 6 Qg(nC) 0.0 0.5 1.0 1.5 2.0 2.5 ID(A)<br>Figure 12. Capacitance variations Figure 13. Output capacitance stored energy<br>C AM18078v1 Eoss AM18079v1<br>(pF) (μJ)<br>f = 1MHz<br>100<br>100 Ciss<br>2<br>10<br>Coss<br>Crss<br>1<br>0.1 0<br>0.1 1 10 100 VDS(V) 0 200 400 600 800 VDS(V)<br>**----- End of picture text -----**<br>


DocID024993 Rev 3 

7/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

**Figure 15. Normalized on-resistance vs temperature** 

**==> picture [433 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM18082v1 AM18081v1<br>(norm) RDS(on)<br>1.2 ID=100 μA (norm) ID=1 A<br>VGS=10 V<br>1.1 2.5<br>1<br>2<br>0.9<br>1.5<br>0.8<br>0.7<br>1<br>0.6<br>0.5<br>0.5<br>0.4 0<br>-100 -50 0 50 100 150 TJ(°C) -100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Normalized V(BR)DSS vs temperature** 

**==> picture [201 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM18083v1<br>(norm)<br>ID=1mA<br>1.1<br>1.05<br>1<br>0.95<br>0.9<br>0.85<br>-100 -50 0 50 100 TJ(°C)<br>Figure 18. Maximum avalanche energy vs<br>starting TJg TJ TJJ<br>EAS AM18086v1<br>(mJ)<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 18. Maximum avalanche energy vs starting TJg TJ TJJ** 

**Figure 17. Source-drain diode forward characteristics** 

**==> picture [201 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18084v1<br>VSD(V)<br>TJ=-50°C<br>1<br>0.9 TJ=25°C<br>0.8<br>0.7 T J =150°C<br>0.6<br>0.5<br>0 0.5 1 1.5 2 ISD(A)<br>**----- End of picture text -----**<br>


8/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for resistive load** 

**Figure 20. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID024993 Rev 3 

9/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **4.1 DPAK (TO-252) type A package information** 

**Figure 25. DPAK (TO-252) type A outline** 

10/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

**Table 9. DPAK (TO-252) type A mechanical data** 

||**Table 9. DPAK (TO-252) type A mechanical data(TO-252) type A mechanical dataTO-252) type A mechanical data) type A mechanical data type A mechanical dataype A mechanical datae A mechanical data**|**Table 9. DPAK (TO-252) type A mechanical data(TO-252) type A mechanical dataTO-252) type A mechanical data) type A mechanical data type A mechanical dataype A mechanical datae A mechanical data**|**Table 9. DPAK (TO-252) type A mechanical data(TO-252) type A mechanical dataTO-252) type A mechanical data) type A mechanical data type A mechanical dataype A mechanical datae A mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|2.20|~~ee ee~~|2.40<br>~~ee~~|
|A1<br>~~a~~|0.90||1.10|
|A2<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.64<br>||0.90<br>|
|b4<br>~~Ge~~|5.20<br>~~Ge~~|~~Ge~~|5.40<br>~~Ge~~|
|c<br>~~Ge~~|0.45<br>~~Ge~~|~~Ge~~|0.60<br>~~Ge~~|
|c2<br>~~a~~|0.48||0.60|
|D<br>~~a~~|6.00||6.20|
|D1<br>~~a~~|4.95|5.10|5.25|
|E<br>~~a~~|6.40<br>||6.60<br>|
|E1<br>~~Ge~~|4.60<br>~~Ge~~|4.70<br>~~Ge~~|4.80<br>~~Ge~~|
|e<br>~~Ge~~|2.16<br>~~Ge~~|2.28<br>~~Ge~~|2.40<br>~~Ge~~|
|e1<br>~~a~~|4.40||4.60|
|H<br>~~a~~|9.35||10.10|
|L<br>~~a~~|1.00||1.50|
|(L1)<br>~~a~~|2.60<br>|2.80<br>|3.00<br>|
|L2<br>~~Ge~~|0.65<br>~~Ge~~|0.80<br>~~Ge~~|0.95<br>~~Ge~~|
|L4<br>~~Ge~~|0.60<br>~~Ge~~|~~Ge~~|1.00<br>~~Ge~~|
|R<br>~~a~~||0.20||
|V2<br>~~a~~|0°||8°|



DocID024993 Rev 3 

11/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

**Figure 26. DPAK (TO-252) footprint[(a)]** 

a. All dimensions are in millimeters 

12/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

## **4.2 TO-220FP package information** 

**==> picture [178 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27.  TO-220FP package outline<br>**----- End of picture text -----**<br>


**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


DocID024993 Rev 3 

13/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

**Table 10. TO-220FP package mechanical data** 

||**Table 10. TO-220FP package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 10. TO-220FP package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 10. TO-220FP package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~<br>|||
||**Min.**<br>~~es~~<br>|**Typ.**<br>~~es~~<br>~~ee ee~~<br>|**Max.**<br>~~es~~<br>~~ee~~<br>|
|A<br>~~a~~|4.4<br>|~~ee ee~~<br>|4.6<br>~~ee~~<br>|
|B<br>~~aGe~~|2.5<br>~~Ge~~|~~ee ee~~<br>~~Ge~~|2.7<br>~~ee~~<br>~~Ge~~|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~|0.45||0.7|
|F<br>~~a~~|0.75||1|
|F1<br>~~a~~|1.15<br>||1.70<br>|
|F2<br>~~Ge~~|1.15<br>~~Ge~~|~~Ge~~|1.70<br>~~Ge~~|
|G<br>~~Ge~~|4.95<br>~~Ge~~|~~Ge~~|5.2<br>~~Ge~~|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~|10||10.4|
|L2<br>~~a~~||16||
|L3<br>~~a~~|28.6<br>||30.6<br>|
|L4<br>~~Ge~~|9.8<br>~~Ge~~|~~Ge~~|10.6<br>~~Ge~~|
|L5<br>~~Ge~~|2.9<br>~~Ge~~|~~Ge~~|3.6<br>~~Ge~~|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9||9.3|
|Dia<br>~~a~~|3||3.2|



14/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

## **4.3 TO-220 package information** 

**==> picture [163 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. TO-220 package outline<br>**----- End of picture text -----**<br>


DocID024993 Rev 3 

15/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

**Table 11. TO-220 package mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅ P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

16/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

## **4.4 IPAK (TO-251) type A package information** 

## **Figure 29. IPAK (TO-251) type A package outline** 

DocID024993 Rev 3 

17/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Package information** 

**Table 12. IPAK (TO-251) type A package mechanical data** 

|**DIM**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**min.**<br>~~a~~|**typ.**<br>~~a~~|**max.**|
|A<br>~~|~~<br>~~|~~|2.20<br>~~|~~|~~ee~~|2.40<br>~~ee~~|
|A1<br>~~|~~<br>~~|~~|0.90<br>~~|~~|~~ee~~|1.10<br>~~ee~~|
|b<br>~~|~~<br>~~|~~|0.64<br>~~|~~|~~ee~~|0.90<br>~~ee~~|
|b2<br>~~|~~<br>~~|~~|~~|~~|~~|~~<br>~~TT~~|0.95<br>~~|~~|
|b4<br>~~|~~<br>~~|~~|5.20<br>~~|~~|~~|~~<br>~~TT~~|5.40<br>~~|~~|
|B5<br>~~|~~<br>~~|~~|~~|~~|0.30<br>~~|~~<br>~~TT~~|~~|~~|
|c<br>~~|~~<br>~~a~~<br>~~|~~|0.45<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|c2<br>~~|~~<br>~~a~~<br>~~|~~|0.48<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|D<br>~~|~~<br>~~a~~<br>~~|~~|6.00<br>~~|~~|~~ee~~|6.20<br>~~ee~~|
|E<br>~~ee~~|6.40|~~|~~|6.60<br>~~|~~|
|e<br>~~ee~~||2.28<br>~~|~~<br>~~TT~~|~~|~~|
|e1<br>~~ee~~|4.40|~~|~~|4.60<br>~~|~~|
|H<br>~~a~~<br>~~ee~~|~~ee~~|16.10<br>~~|~~|~~|~~|
|L<br>~~ee~~|9.00<br>~~ee~~|~~|~~<br>~~|~~|9.40<br>~~|~~<br>~~|~~|
|L1<br>~~ee~~<br>~~|~~<br>~~|~~|0.80<br>~~ee~~<br>~~|~~<br>|~~|~~<br>~~|~~<br>~~|~~<br>|1.20<br>~~|~~<br>~~|~~<br>|
|L2<br>~~|~~<br>~~|~~|~~|~~<br>|0.80<br>~~|~~<br>~~|~~<br>|1.00<br>~~|~~<br>|
|V1<br>~~|~~<br>~~|pf~~|~~|~~<br>~~pf~~|10°<br>~~|~~<br>~~|~~<br>~~pf~~|~~|~~<br>~~pf~~|



18/22 

DocID024993 Rev 3 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Packaging information** 

## **5 Packaging information** 

## **Figure 30.  Tape for DPAK** 

**==> picture [399 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>a i e . . .<br>| / O00 ®O 9000 8 00 E<br>F<br>K0 W<br>B1 B0<br>: L__]<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ——_»<br>User direction of feed<br>R<br>V ea j aca cenc e ai e<br>soeesee<br>i ee es ee ee ee Sn |<br>—_—» Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


DocID024993 Rev 3 19/22 ~~[<7~~ 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Packaging information** 

**==> picture [377 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 31. Reel for DPAK<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A At slot location<br>B<br>D<br>L Q C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>. | in core for<br>Vv tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 13.  DPAK tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>~~ee~~ee~~ee~~|**Reel**<br>~~ee~~<br>~~ee~~ee~~ee~~|**Reel**<br>~~ee~~<br>~~ee~~ee~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee~~<br>~~es~~||**Dim.**<br>~~ee ~~ee<br>~~aes~~|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|**Max.**<br>~~ee~~<br>~~aes~~||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|6.8<br>|7<br>~~es~~|A<br>~~es~~||330|
|B0<br>~~a~~|10.4|10.6|B|1.5||
|B1<br>~~a~~||12.1|C|12.8|13.2|
|D<br>~~a~~|1.5<br>~~ee~~|1.6<br>~~ee~~|D<br>~~ee~~|20.2<br>~~ee~~|~~ee~~|
|D1<br>~~a~~|1.5||G|16.4|18.4|
|E<br>~~a~~|1.65|1.85|N|50||
|F<br>~~a~~|7.4|7.6|T||22.4|
|K0<br>~~a~~|2.55|2.75||||
|P0<br>~~a~~|3.9|4.1|Base qty.||2500|
|P1<br>~~a~~|7.9<br>|8.1<br><br>~~ee~~|Bulk qty.<br><br>~~ee~~||2500|
|P2<br>~~ee~~|1.9<br>~~ee~~|2.1<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|R<br>~~ee~~|40<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|0.35<br>~~ee~~<br>~~ee~~<br>~~ee~~||||
|W<br>~~ee~~|15.7<br>~~ee~~|16.3<br>~~ee~~<br>~~ee~~||||



20/22 DocID024993 Rev 3 ~~a~~ 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-Jul-2013|1|First release.|
|18-Feb-2014|2|– Added: IPAK package<br>– Modified: EASvalue in_Table 2_<br>– Modified: Rthj-casein_Table 3_<br>– Modified: typical values in_Table 5_,_6_and_7_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Figure 25_,_26_and_Table 9_<br>– Added:_Table 12_and_Figure 29_<br>– Minor text changes|
|25-Sep-2015|3|– Updated title, features and description in cover page.<br>– Updated_Figure 10_,_Figure 11_and_Section 4: Package_<br>_information_.<br>– Minor text changes.|



DocID024993 Rev 3 

21/22 

**STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

22/22 DocID024993 Rev 3 



## Links

- [View this product on Novapart](https://novapart.co/products/STP2N80K5/power-mosfet-n-channel-800-v-2-a-35-ohm-to-220ab)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp2n80k5/mosfet-n-ch-800v-2a-to-220ab/dp/2807294)
---

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