# Power MOSFET, N Channel, 600 V, 22 A, 0.135 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807292/)

**URL**: https://novapart.co/products/STP28N60M2/power-mosfet-n-channel-600-v-22-a-0135-ohm-to
**SKU**: STP28N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1100
**Stock**: 10+
**Lead Time**: 56 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 22A |
| Drain Source On State Resistance | 0.135ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807292/)

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS @ TJmax**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STB28N60M2|650 V|0.150 Ω|22 A|
|STI28N60M2||||
|STP28N60M2||||
|STW28N60M2||||



- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- 100% avalanche tested 

- Zener-protected 

**Figure 1: Internal schematic diagram** 

**==> picture [166 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
D (2 TAB )<br>G ( 1 )<br>S ( 3 ) AM15572V1<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

- LCC converters, resonant converters 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB28N60M2|28N60M2|D²PAK|Tape and reel|
|STI28N60M2||I²PAK|Tube|
|STP28N60M2||TO-220||
|STW28N60M2||TO-247||



March 2017 

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This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

|**Contents**<br>**STB28N60M2, STI28N60M2, STP28N60M2,**<br>**STW28N60M2**|**Contents**<br>**STB28N60M2, STI28N60M2, STP28N60M2,**<br>**STW28N60M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>D²PAK package information ............................................................ 10|
||4.2<br>D²PAK packing information ............................................................. 13|
||4.3<br>I²PAK package information ............................................................. 15|
||4.4<br>TO-220 type A package information ................................................ 16|
||4.5<br>TO-247 package information ........................................................... 18|
|**5**|**Revision history ............................................................................ 20**|



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**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|22|A|
|ID|Drain current (continuous) at TC= 100 °C|14|A|
|IDM_(1)_|Drain current (pulsed)|88|A|
|PTOT|Total dissipation at TC= 25 °C|170|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|15|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. 

- (3)VDS ≤ 480 V 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**||**Value**|**Value**||**Unit**|
|---|---|---|---|---|---|---|
|||**D²PAK**|**I²PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistancejunction-case max||0.74|||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max_(1)_|30||||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max||62.5|62.5|50|°C/W|



## **Notes:** 

(1)When mounted on 1 inch² FR-4, 2 Oz copper board. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetetive or not repetetive<br>(pulse width limited byTjmax)|3.6|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR; VDD= 50 V)|350|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified. 

**Table 5: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C_(1)_|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 11 A||0.135|0.150|Ω|



## **Notes:** 

(1) Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|1440|-|pF|
|Coss|Output capacitance||-|70|-|pF|
|Crss|Reverse transfer<br>capacitance||-|2|-|pF|
|Coss eq._(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|104|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz open drain|-|5.5|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 22 A,<br>VGS= 0 to 10 V (see_Figure 17:_<br>_"Test circuit for gate charge_<br>_behavior"_)|-|36|-|nC|
|Qgs|Gate-source charge||-|7.2|-|nC|
|Qgd|Gate-drain charge||-|16|-|nC|



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80 % VDSS. 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 11 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 16: "Test circuit for_<br>_resistive load switching times"_<br>and_Figure 21: "Switching time_<br>_waveform"_)|-<br>-<br>-<br>-|14.5|-|ns|
|tr|Rise time|||7.2|-|ns|
|td(off)|Turn-off-delaytime|||100|-|ns|
|tf|Fall time|||8|-|ns|



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DocID025254 Rev 4 

**Electrical characteristics** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Table 8: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||22|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||88|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 22 A|-||1.6|V|
|trr|Reverse recoverytime|ISD= 22 A, di/dt = 100 A/µs,<br>VDD= 60 V (see_Figure 21:_<br>_"Switching time waveform"_)|-|350||ns|
|Qrr|Reverse recoverycharge||-|4.7||µC|
|IRRM|Reverse recoverycurrent||-|27||A|
|trr|Reverse recoverytime|ISD= 22 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 21: "Switching time_<br>_waveform"_)|-|451||ns|
|Qrr|Reverse recovery charge||-|6.5||µC|
|IRRM|Reverse recovery current||-|29||A|



## **Notes:** 

(1)Pulse width is limited by safe operating area. 

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area for D²PAK, TO-220 and Figure 3: Thermal impedance for D²PAK, TO-220 and I²PAK I²PAK** 

**==> picture [178 x 159] intentionally omitted <==**

**==> picture [155 x 151] intentionally omitted <==**

**Figure 4: Safe operating area for TO-247** 

**==> picture [179 x 160] intentionally omitted <==**

**Figure 5: Thermal impedance for TO-247** 

**==> picture [156 x 151] intentionally omitted <==**

**Figure 6: Output characteristics** 

**==> picture [171 x 160] intentionally omitted <==**

**Figure 7: Transfer characteristics** 

**==> picture [170 x 160] intentionally omitted <==**

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**Electrical characteristics** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Figure 8: Gate charge vs gate-source voltage** 

**==> picture [182 x 166] intentionally omitted <==**

**Figure 10: Capacitance variations** 

**==> picture [191 x 165] intentionally omitted <==**

**Figure 12: Normalized gate threshold voltage vs temperature** 

**==> picture [179 x 165] intentionally omitted <==**

**Figure 9: Static drain-source on-resistance** 

**==> picture [174 x 166] intentionally omitted <==**

**Figure 11: Output capacitance stored energy** 

**==> picture [183 x 165] intentionally omitted <==**

**Figure 13: Normalized on-resistance vs temperature** 

**==> picture [174 x 166] intentionally omitted <==**

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**Electrical characteristics** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Figure 14: Normalized VDS vs temperature** 

**==> picture [175 x 164] intentionally omitted <==**

**Figure 15: Source-drain diode forward characteristics** 

**==> picture [189 x 160] intentionally omitted <==**

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**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16: Test circuit for resistive load  Figure 17: Test circuit for gate charge<br>switching times  behavior<br>Figure 18: Test circuit for inductive load  Figure 19: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 21: Switching time waveform<br>Figure 20: Unclamped inductive waveform<br>DocID025254 Rev 4  9/21<br>**----- End of picture text -----**<br>


**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 D²PAK package information** 

**Figure 22: D²PAK (TO-263) type A package outline** 

**==> picture [408 x 360] intentionally omitted <==**

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DocID025254 Rev 4 

**Package information** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Table 9: D²PAK (TO-263) type A package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.40||
|V2|0°||8°|



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**Package information** 

**Figure 23: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)** 

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**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Package information** 

## **4.2 D²PAK packing information** 

**Figure 24: D2PAK type A tape outline** 

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**Package information** 

## **Figure 25: D2PAK type A reel outline** 

**Table 10: D²PAK type A tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Package information** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**==> picture [467 x 659] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.3  I²PAK package information<br>Figure 26: I²PAK package outline<br>A<br>L2 E c2+<br>aa<br>|<br>L||<br>; b1(3x,<br>_ b (3x) dL ¢C0004982_Rev_H<br>Table 11: I²PAK package mechanical data<br>mm<br>Dim.<br>Min.  Typ.  Max.<br>ee<br>A  4.40  -  4.60<br>ee<br>A1  2.40  -  2.72<br>ee<br>b  0.61  -  0.88<br>ee<br>b1  1.14  -  1.70<br>ee<br>c  0.49  -  0.70<br>ee<br>c2  1.23  -  1.32<br>ee<br>D  8.95  -  9.35<br>ee<br>e  2.40  -  2.70<br>ee<br>e1  4.95  -  5.15<br>A<br>E  10  -  10.40<br>ee eG<br>L  13  -  14<br>a<br>L1  3.50  -  3.93<br>ee<br>L2  1.27  -  1.40<br>=<br>ee<br>DocID025254 Rev 4  15/21<br>ky oo<br>**----- End of picture text -----**<br>


**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Package information** 

## **4.4 TO-220 type A package information** 

**Figure 27: TO-220 type A package outline** 

16/21 

DocID025254 Rev 4 

**Package information** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Table 12: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Package information** 

## **4.5 TO-247 package information** 

**Figure 28: TO-247 package outline** 

**==> picture [406 x 483] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_8<br>**----- End of picture text -----**<br>


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**Package information** 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Table 13: TO-247 package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



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**STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

**Revision history** 

## **5 Revision history** 

**Table 14: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|13-Sep-2013|1|First release.|
|29-Jan-2014|2|– Modified: title, ID value and features in cover page<br>– Modified: ID, IDM and PTOT values in Table 2<br>– Modified: note 2<br>– Modified: Rthj-case value in Table 3<br>– Modified: the entire typical values in Table 4, 6, 7 and 8<br>– Modified: RDS(on) typical value in Table 5<br>– Modified: Figure 9 and 10<br>– Added: Section 4: Package information<br>– Minor text changes|
|09-Feb-2015|3|– Updated title and description<br>– Updated Table 2.: Absolute maximum ratings and Table 4.:<br>Avalanche characteristics<br>– Updated Figure 5.: Thermal impedance for TO-247 and Figure 6.:<br>Output characteristics<br>– Updated 4: Package information<br>– Minor text changes.|
|14-Mar-2017|4|Added part number STI28N60M2.<br>Updated title, silhouette, features and_Table 1: "Device summary"_in<br>cover page.<br>Updated_Table 3: "Thermal data"_and_Section 4: "Package_<br>_information"_.<br>Minor text changes.|



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DocID025254 Rev 4 

## **STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2017 STMicroelectronics – All rights reserved 

DocID025254 Rev 4 

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## Links

- [View this product on Novapart](https://novapart.co/products/STP28N60M2/power-mosfet-n-channel-600-v-22-a-0135-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp28n60m2/mosfet-n-ch-600v-22a-to-220ab/dp/2807292)
---

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