# Power MOSFET, Mdmesh DM2, N Channel, 600 V, 21 A, 0.13 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:2531110/)

**URL**: https://novapart.co/products/STP28N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-21-a-013
**SKU**: STP28N60DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4300
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2531110/)

**STB28N60DM2, STP28N60DM2, STW28N60DM2** N-channel 600 V, 0.130 Ω typ., 22 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages 

− **Datasheet preliminary data** 

**==> picture [156 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB TAB<br>2<br>3<br>1<br>D [2] PAK 2 3<br>1<br>TO-220<br>3<br>2<br>1<br>TO-247<br>»<br>**----- End of picture text -----**<br>


## **Figure 1. Internal schematic diagram** 

## **Features** 

|**Order code**|**VDS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STB28N60DM2|650 V|0.160Ω|22 A|
|STP28N60DM2||||
|STW28N60DM2||||



- Fast-recovery body diode 

- Extremely low gate charge and input capacitance 

- Low on-resistance 

- 100% avalanche tested 

**==> picture [171 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


- Extremely high dv/dt ruggedness 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These high voltage N-channel Power MOSFETs are part of the MDmesh DM2  fast recovery diode series. They offer very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB28N60DM2|28N60DM2|D2PAK|Tape and reel|
|STP28N60DM2||TO-220|Tube|
|STW28N60DM2||TO-247||



October 2014 DocID027040 Rev 1 

1/18 

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

|**Contents**|**STB28N60DM2, STP28N60DM2, STW28N60DM2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7**|
||4.1<br>D2PAK, STB33N60DM2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||4.2<br>TO-220, STP33N60DM2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.3<br>TO-247, STW33N60DM2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|22|A|
|ID|Drain current (continuous) at TC= 100 °C|14|A|
|IDM<br>(1)|Drain current (pulsed)|88|A|
|PTOT|Total dissipation at TC= 25 °C|190|W|
|dv/dt(2)|Peak diode recovery voltage slope|40|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V. 

3. VDS ≤ 480 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|Unit|
|---|---|---|---|---|---|
|||**D2PAK**|**TO-220**|**TO-247**||
|Rthj-case|Thermal resistance junction-case max|0.66|||°C/W|
|Rthj-pcb|Thermal resistance junction-pcb max(1)|30|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max||62.5|50|°C/W|



1. When mounted on 1 inch² FR-4, 2 Oz copper board 

**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not<br>repetitive (pulse width limited by Tjmax)|TBD|A|
|EAS|Single pulse avalanche energy (starting<br>Tj=25°C, ID= IAR; VDD=50)|TBD|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V|||1|µA|
|||VDS= 600 V, TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 11 A||0.130|0.160|Ω|



## **Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|TBD|-|pF|
|Coss|Output capacitance||-|TBD|-|pF|
|Crss|Reverse transfer<br>capacitance||-|TBD|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0|-|TBD|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0|-|TBD|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 22 A,<br>VGS= 10 V<br>(see_Figure 3_)|-|39|-|nC|
|Qgs|Gate-source charge||-|TBD|-|nC|
|Qgd|Gate-drain charge||-|TBD|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

## **Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 11 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 2_and_7_)|-|TBD|-|ns|
|tr|Rise time||-|TBD|-|ns|
|td(off)|Turn-off delay time||-|TBD|-|ns|
|tf|Fall time||-|TBD|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>(1)|Source-drain current||-||22|A|
|ISDM (2)|Source-drain current (pulsed)||-||88|A|
|VSD<br>(3)|Forward on voltage|ISD= 22 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 22 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 4_)|-|140||ns|
|Qrr|Reverse recovery charge||-|TBD||nC|
|IRRM|Reverse recovery current||-|TBD||A|
|trr|Reverse recovery time|ISD= 22 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 4_)|-|TBD||ns|
|Qrr|Reverse recovery charge||-|TBD||nC|
|IRRM|Reverse recovery current||-|TBD||A|



1. Limited by maximum junction temperature 

2. Pulse width limited by safe operating area. 

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**STB28N60DM2, STP28N60DM2, STW28N60DM2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 2. Switching times test circuit for resistive load** 

**Figure 3. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 4. Test circuit for inductive load Figure 5. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 6. Unclamped inductive waveform** 

## **Figure 7. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **4.1 D2PAK, STB33N60DM2** 

**==> picture [160 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 446] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_U<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**|**Table 9. D²PAK(TO-263) mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

**==> picture [405 x 358] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. D²PAK footprint [(a)]<br>Footprint<br>**----- End of picture text -----**<br>


a. All dimension are in millimeters 

10/18 

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**Package mechanical data** 

## **4.2 TO-220, STP33N60DM2** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. TO-220 type A drawing<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220 type A mechanical data** 

||**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|**Table 10. TO-220 type A mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

## **4.3 TO-247, STW33N60DM2** 

**==> picture [125 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 11. TO-247 mechanical data** 

||**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 12. Tape for D²PAK (TO-263)** 

**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>{7 co0 00 00 a e ome<br>F<br>K0 W<br>B1 B0<br>A E I RI RI B IE,<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ——<br>User direction of feed<br>R<br>sogtees<br>[Se EEE EE<br>—— Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


DocID027040 Rev 1 15/18 ~~oe~~ 

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**Packaging mechanical data** 

## **Figure 13. Reel for D²PAK (TO-263)** 

**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


**Table 12. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|0.35<br>24.3||||
|T|0.25|||||
|W|23.7|||||



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**Revision history** 

## **6 Revision history** 

**Table 13. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-Oct-2014|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

18/18 DocID027040 Rev 1 



## Links

- [View this product on Novapart](https://novapart.co/products/STP28N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-21-a-013)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp28n60dm2/mosfet-n-ch-600v-21a-to-220/dp/2531110)
---

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