# Power MOSFET, N Channel, 600 V, 10 A, 0.135 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1737872/)

**URL**: https://novapart.co/products/STP26NM60N/power-mosfet-n-channel-600-v-10-a-0135-ohm-to-220
**SKU**: STP26NM60N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.0300
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.135ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1737872/)

# **STB26NM60N, STP26NM60N** 

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages 

Datasheet - production data 

## **Features** 

**==> picture [186 x 81] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>TAB<br>D PAK2 Ge TO-220 N 3<br>1 [2]<br>**----- End of picture text -----**<br>


|**Order code**|**VDS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STB26NM60N|600 V|0.165 Ω|20 A|
|STP26NM60N||||



- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

**==> picture [60 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

AM01475v1_noTab_noZen 

**Table 1: Device summary Order code Marking Package Packaging** STB26NM60N D²PAK Tape and reel 26NM60N STP26NM60N TO-220 Tube ~~——~~ December 2016 DocID15642 Rev 7 1/17 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STB26NM60N, STP26NM60N **|**Contents**<br>**STB26NM60N, STP26NM60N **|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>D2PAK (TO-263) type A package information................................... 9|
||4.2<br>D2PAK packaging information ........................................................ 12|
||4.3<br>TO-220 type A package information ................................................ 14|
|**5**|**Revision history ............................................................................ 16**|



2/17 DocID15642 Rev 7 

**STB26NM60N, STP26NM60N** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|600|V|
|VGS|Gate-source voltage|±30|V|
|ID|Drain current (continuous) at TC= 25 °C|20|A|
|ID|Drain current (continuous) at TC= 100 °C|12.6|A|
|IDM_(1)_|Drain current (pulsed)|80|A|
|PTOT|Total dissipation at TC= 25 °C|140|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|15|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|Tj|Operating junction temperature range|||



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS 

**Table 3: Thermal data** 

|||**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|**Symbol**|**Parameter**|**D²PAK**|**TO-220**||
|Rthj-case|Thermal resistancejunction-case|0.89||°C/W|
|Rthj-amb|Thermal resistance junction-ambient||62.5|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|30||°C/W|



## **Notes:** 

(1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAS|Single pulse avalanche current (pulse width limited by Tjmax)|6|A|
|EAS|Single pulse avalanche energy (starting TJ=25 °C, ID=IAS,<br>VDD=50 V)|610|mJ|



DocID15642 Rev 7 

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**STB26NM60N, STP26NM60N** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0 V|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C_(1)_|||100||
|IGSS|Gate-bodyleakage current|VDS= 0 V, VGS= ±25 V|||±0.1|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 10 A||0.135|0.165|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0 V|-|1800|-|pF|
|Coss|Output capacitance||-|115|-|pF|
|Crss|Reverse transfer<br>capacitance||-|6|-|pF|
|Coss eq.<br>_(1)_|Equivalent output<br>capacitance|VGS= 0 V, VDS= 0 to 480 V|-|310|-|pF|
|Qg|Totalgate charge|VDD= 480 V, ID= 20 A,<br>VGS= 10 V<br>(see_Figure 14: "Test circuit for_<br>_gate charge behavior"_|-|60|-|nC|
|Qgs|Gate-source charge||-|8.5|-|nC|
|Qgd|Gate-drain charge||-|30|-|nC|
|RG|Gate input resistance|f=1 MHz, ID=0 A|-|2.8|-|Ω|



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 

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DocID15642 Rev 7 

**STB26NM60N, STP26NM60N** 

**Electrical characteristics** 

## **Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 10 A, RG= 4.7 Ω,<br>VGS= 10 V<br>(see_Figure 13: "Test circuit for_<br>_resistive load switching times"_and<br>_Figure 18: "Switching time_<br>_waveform"_)|-|13|-|ns|
|tr|Rise time||-|25|-|ns|
|td(off)|Turn-off delaytime||-|85|-|ns|
|tf|Fall time||-|50|-|ns|



**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||20|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||80|A|
|VSD_(2)_|Forward on voltage|ISD= 20 A, VGS= 0|-||1.5|V|
|trr|Reverse recoverytime|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 60 V<br>(see_Figure 15: "Test circuit for_<br>_inductive load switching and diode_<br>_recovery times"_)|-|370||ns|
|Qrr|Reverse recovery<br>charge||-|5.8||µC|
|IRRM|Reverse recovery<br>current||-|31.6||A|
|trr|Reverse recoverytime|ISD= 20 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 15: "Test circuit for_<br>_inductive load switching and diode_<br>_recovery times"_)|-|450||ns|
|Qrr|Reverse recovery<br>charge||-|7.5||µC|
|IRRM|Reverse recovery<br>current||-|32.5||A|



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID15642 Rev 7 

5/17 

**STB26NM60N, STP26NM60N** 

## **Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**Figure 3: Thermal impedance** 

**Figure 4: Output characteristics** 

**==> picture [146 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5: Transfer characteristics<br>**----- End of picture text -----**<br>


**Figure 6: Gate charge vs gate-source voltage** 

**Figure 7: Static drain-source on-resistance** 

**==> picture [7 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
W<br>**----- End of picture text -----**<br>


6/17 

DocID15642 Rev 7 

**Electrical characteristics** 

**==> picture [139 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
STB26NM60N, STP26NM60N<br>**----- End of picture text -----**<br>


**Figure 8: Capacitance variations** 

**Figure 9: Source-drain diode forward characteristics** 

**Figure 10: Normalized gate threshold voltage vs temperature** 

**Figure 11: Normalized on-resistance vs temperature** 

**Figure 12: Normalized V(BR)DSS vs temperature** 

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**STB26NM60N, STP26NM60N** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load  Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>**----- End of picture text -----**<br>


**==> picture [403 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 D2PAK (TO-263) type A package information** 

**Figure 19: D²PAK (TO-263) type A package outline** 

**==> picture [407 x 497] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_A_rev22<br>**----- End of picture text -----**<br>


DocID15642 Rev 7 

9/17 

## **Package information STB26NM60N, STP26NM60N Table 9: D²PAK (TO-263) type A package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10||10.40|
|E1|8.50|8.70|8.90|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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DocID15642 Rev 7 

**STB26NM60N, STP26NM60N** 

**Package information** 

**Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)** 

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**STB26NM60N, STP26NM60N** 

**Package information** 

## **4.2 D2PAK packaging information** 

**Figure 21: Tape outline** 

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DocID15642 Rev 7 

**STB26NM60N, STP26NM60N** 

**Package information** 

**Figure 22: Reel outline** 

**Table 10: D²PAK tape and reel mechanical data** 

|**Tape**|**Tape**|**Tape**|**Reel**|**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**STB26NM60N, STP26NM60N** 

## **Package information 4.3 TO-220 type A package information** 

**Figure 23: TO-220 type A package outline** 

~~©~~ 14/17 DocID15642 Rev 7 

**STB26NM60N, STP26NM60N** 

**Package information** 

**Table 11: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



DocID15642 Rev 7 

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**STB26NM60N, STP26NM60N** 

**Revision history** 

## **5 Revision history** 

**Table 12: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|29-Apr-2009|1|First release.|
|17-Dec-2009|2|Added newpackage, mechanical data: D²PAK|
|20-Jun-2011|3|Inserted device in I²PAK.|
|13-Mar-2012|4|Updated PTOTand derating factor in_Table 2_.<br>Update Rthj-casefor TO-220FP in_Table 3_.<br>Update_Figure 10_and_Figure 15_.<br>Update_Section 5: Packaging mechanical data_.|
|20-Jun-2012|5|Updated title on the cover page.<br>Minor text changes.|
|09-Sep-2013|6|– The part numbers STI26NM60N and STW26NM60N have been<br>moved to the separate datasheets<br>– Modified: VGSvalue in_Table 2_.|
|12-Dec-2016|7|The part number STF26NM60N has been moved to a separate<br>datasheet.<br>Modified_Table 2: "Absolute maximum ratings"_,_Table 3: "Thermal_<br>_data"_,_Table 5: "On/off states"_,_Table 6: "Dynamic"_and_Table 7:_<br>_"Switching times"_.<br>Modified_Section 2.1: "Electrical characteristics (curves)"_.<br>Minor text changes.|



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## **STB26NM60N, STP26NM60N** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

DocID15642 Rev 7 

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