# Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9803106/)

**URL**: https://novapart.co/products/STP24NF10/power-mosfet-n-channel-100-v-26-a-0055-ohm-to-220
**SKU**: STP24NF10
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4970
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 85W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 26A |
| Drain Source On State Resistance | 0.055ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803106/)

**STP24NF10** 

Datasheet 

N-channel 100 V, 55 mΩ typ., 26 A STripFET II Power MOSFET in a TO-220 package 

## **Features** 

**==> picture [73 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>1  [2 3]<br>TO-220<br>**----- End of picture text -----**<br>


|**Type**|**VDS**|**RDS(on)max.**|**ID**|
|---|---|---|---|
|STP24NF10|100 V|60 mΩ|26 A|
|•<br>Exceptional dv/dt capability||||



- 100% avalanche tested 

- Low gate charge 

**==> picture [119 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, TAB)<br>G(1)<br>S(3)<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 

## **Product status link** 

STP24NF10 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STP24NF10|
|**Marking**|P24NF10|
|**Package**|TO-220|
|**Packing**|Tube|



**DS1936** - **Rev 8** - **February 2022** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STP24NF10 Electrical ratings** 

## **1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|100|V|
|VDGR|Drain-gate voltage (RGS= 20 kΩ)|100|V|
|VGS|Gate-source voltage|±20|V|
|ID|Drain current (continuous) at TC= 25 °C|26|A|
||Drain current (continuous) at TC= 100 °C|18||
|IDM(1)|Drain current (pulsed)|104|A|
|PTOT|Total power dissipation at TC= 25 °C|85|W|
|EAS(2)|Single-pulse avalanche energy|220|mJ|
|dv/dt(3)|Peak diode recovery voltage slope|9|V/ns|
|Tstg|Storage temperature range|-55 to 175|°C|
|TJ|Operating junction temperature range||°C|



_1. Pulse width limited by safe operating area._ 

_2. Starting TJ = 25 °C, ID = 12 A, VDD = 30 V._ 

_3. ISD ≤ 24 A, di/dt ≤ 300 A/μs, VDD = 80%V(BR)DSS._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance, junction-to-case|1.76|°C/W|
|RthJA|Thermal resistance, junction-to-ambient|62.5|°C/W|



**DS1936** - **Rev 8** 

**page 2/12** 

**STP24NF10 Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified. 

**Table 3. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|100|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 100 V|||1|µA|
|||VGS= 0 V, VDS= 100 V,<br>TC= 125 °C(1)|||10||
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 12 A||55|60|mΩ|



_1. Specified by design, not tested in production._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs (1)|Forward transconductance|VDS= 15 V, ID= 12 A|-|10||S|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|870||pF|
|Coss|Output capacitance||-|125||pF|
|Crss|Reverse transfer capacitance||-|50||pF|
|Qg|Total gate charge|VDD= 80 V, ID= 24 A, VGS= 10 V<br>(seeFigure 13. Test circuit for gate<br>charge behavior)|-|30|41|nC|
|Qgs|Gate-source charge||-|6||nC|
|Qgd|Gate-drain charge||-|10||nC|



_1. Pulsed: pulse duration=300 μs, duty cycle 1.5%._ 

## **Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 50 V, ID= 12 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 12. Test circuit for<br>resistive load switching times<br>andFigure 17. Switching time<br>waveform)|-|60|-|ns|
|tr|Rise time||-|15|-|ns|
|td(off)|Turn-off delay time||-|50|-|ns|
|tf|Fall time||-|20|-|ns|



**DS1936** - **Rev 8** 

**page 3/12** 

**STP24NF10 Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||26|A|
|ISDM(1)|Source-drain current (pulsed)||-||104|A|
|VSD(2)|Forward on voltage|ISD= 24 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery time|ISD= 24 A, di/dt = 100 A/µs,<br>VDD= 30 V, TJ= 150 °C<br>(seeFigure 14. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|100||ns|
|Qrr|Reverse recovery charge||-|375||nC|
|IRRM|Reverse recovery current||-|7.5||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS1936** - **Rev 8** 

**page 4/12** 

**STP24NF10 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Safe operating area Figure 2. Thermal impedance<br>ID HV02160 280TOID<br>(A) d = 0.5<br>4<br>2<br>10 2 8 0.2<br>6<br>4<br>0.1<br>2<br>10 1 86 100 m s1m s 10 - 1 0.05<br>4 0.02 Z t h = [k] R JC<br>2 10m s 0.01 d = t p [/] t<br>10 0 8<br>6 SINGLE PULSE<br>4 tp<br>2 t<br>10 - 1 2 4 6 8 2 4 6 8 10 - 2<br>10 0 10 1 10 2 VDS (V) 10 tp (s)<br>Rds( on)  Lim it s<br>**----- End of picture text -----**<br>


**Figure 3. Output characteristics** 

**==> picture [177 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID HV02195<br>(A) VGS  = 10 V<br>8V<br>40 6V<br>30<br>20<br>5V<br>10<br>4V<br>0 5 10 15 20 VDS  (V)<br>**----- End of picture text -----**<br>


**Figure 4. Transfer characteristics** 

**==> picture [181 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID HV02200<br>(A)<br>VDS  = 10 V<br>40<br>30<br>20<br>10<br>0 2 4 6 8 VGS (V)<br>**----- End of picture text -----**<br>


**Figure 5. Trasconductance** 

**==> picture [180 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
HV02165<br>gfs (S)<br>VDS = 10 V<br>25 °C<br>TJ = -40 °C<br>TJ = 150 °C<br>4<br>9 12 15 ID (A)<br>**----- End of picture text -----**<br>


**Figure 6. Static drain-source on-resistance** 

**==> picture [184 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) HV02085<br>(mΩ)<br>VGS  = 10 V<br>160<br>120<br>80<br>40<br>0 5 10 15 20 ID  (A)<br>**----- End of picture text -----**<br>


**DS1936** - **Rev 8** 

**page 5/12** 

**STP24NF10 Electrical characteristics (curves)** 

**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations<br>VGS HV02185 HV02190<br>(V)<br>f = 1 MHz<br>VGS = 0 V<br>VDS = 80 V 2000<br>ID = 24 V<br>1500<br>1000<br>iss<br>500<br>Coss<br>Crss<br>Qg (nC) 0 10 20 30 40 VDS (V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Normalized gate threshold voltage vs<br>Figure 10. Normalized on-resistance vs temperature<br>temperature<br>VGS(th) HV02175 (norm.)RDS(on) VGS = 10 V HV18910<br>(norm.) VDS = VGS ID = 24 A<br>ID = 250 μA<br>0.7<br>TJ (°C) TJ (°C)<br>**----- End of picture text -----**<br>


**Figure 11. Source-drain diode forward characteristics** 

**==> picture [175 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD HV02170<br>(V)<br>TJ  = -40 °C<br>TJ  = 25 °C<br>TJ  = 150 °C<br>0.6<br>ISD (A)<br>**----- End of picture text -----**<br>


**DS1936** - **Rev 8** 

**page 6/12** 

**STP24NF10 Test circuits** 

## **3 Test circuits** 

**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width + 2.7 kΩ<br>2200 VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A<br>D L<br>G D.U.T. fastdiode 100 µH VD<br>25 Ω S B B B D µF3.3 + 1000µF VDD + 2200µF 3.3µF VDD<br>G D.U.T. ID<br>+ RG S<br>_ Vi D.U.T.<br>pulse width<br>AM01470v1<br>AM01471v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform<br>ton toff<br>V(BR)DSS td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>0 10%<br>AM01472v1 AM01473v1<br>**----- End of picture text -----**<br>


**DS1936** - **Rev 8** 

**page 7/12** 

**STP24NF10 Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1** 

## **TO-220 type A package information** 

## **Figure 18. TO-220 type A package outline** 

**==> picture [321 x 455] intentionally omitted <==**

**==> picture [65 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_23<br>**----- End of picture text -----**<br>


**DS1936** - **Rev 8** 

**page 8/12** 

**STP24NF10 TO-220 type A package information** 

**Table 7. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
|Slug flatness||0.03|0.10|



**DS1936** - **Rev 8** 

**page 9/12** 

**STP24NF10** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2004|6|Complete version.|
|09-Aug-2006|7|New template, no content change.|
|22-Feb-2022|8|The part number STB24NF10 have been removed and the document has been updated<br>accordingly.<br>Updated title andInternal schematicon cover page.<br>UpdatedSection  3  Test circuits.<br>UpdatedSection  4  Package information.<br>Minor text changes.|



**DS1936** - **Rev 8** 

**page 10/12** 

**STP24NF10 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**||



**DS1936** - **Rev 8** 

**page 11/12** 

**STP24NF10** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2022 STMicroelectronics – All rights reserved 

**DS1936** - **Rev 8** 

**page 12/12** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp24nf10/mosfet-n-to-220/dp/9803106)
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