# Power MOSFET, N Channel, 500 V, 17 A, 0.27 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9512667/)

**URL**: https://novapart.co/products/STP20NK50Z/power-mosfet-n-channel-500-v-17-a-027-ohm-to-220
**SKU**: STP20NK50Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0100
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipatio

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.27ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9512667/)

**==> picture [61 x 39] intentionally omitted <==**

## **STF20NK50Z, STP20NK50Z** 

## N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in TO-220FP and TO-220 packages 

**Datasheet — production data** 

## **Features** 

|**Order codes**|**VDSS**|**RDS(on)**<br>**max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STF20NK50Z<br>STP20NK50Z|500 V<br>500 V|< 0.27Ω<br>< 0.27Ω|17 A<br>17 A|40 W<br>190 W|



- Extremely high dv/dt capability 

- 100% avalanche tested 

- Gate charge minimized 

- Very low intrinsic capacitance 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

**==> picture [220 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3 3<br>2 2<br>1 1<br>TO-220FP TO-220<br>Figure 1. Internal schematic diagram<br>D(2 or TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF20NK50Z|F20NK50Z|TO-220FP|Tube|
|STP20NK50Z|P20NK50Z|TO-220||



1/15 

April 2012 

Doc ID 023060 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STF20NK50Z, STP20NK50Z** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)             . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220**|**TO-220FP**||
|VDS|Drain-source voltage|500||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25 °C|17|17(1)|A|
|ID|Drain current (continuous) at TC= 100 °C|10.71|10.71(1)|A|
|IDM<br>(2)|Drain current (pulsed)|68|68|A|
|PTOT|Total dissipation at TC= 25 °C|190|40|W|
||Derating factor|1.52|0.32|W/°C|
|VISO|Insulation withstand voltage (RMS) from all<br>three leads to external heat sink<br>(t = 1 s; TC= 25 °C)||2500|V|
|ESD|Gate-source human body model<br>(R=1.5 kΩ, C=100 pF)|6||kV|
|dv/dt<br>(3)|Peak diode recovery voltage slope|4.5||V/ns|
|Tstg|Storage temperature|-55 to 150||°C|
|Tj|Max operating junction temperature|150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤  17 A, di/dt   ≤   200 A/µs, VDD ≤   V(BR)DSS, Tj ≤  TJMAX. 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||**Unit**|
|||**TO-220**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|0.66|3.1|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|62.5|°C/W|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tj max)|17|A|
|EAS|Single pulse avalanche energy<br>(starting TJ=25 °C, ID=IAR, VDD=50 V)|850|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown  voltage|ID=1 mA, VGS= 0|500|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 500 V<br>VDS= 500 V, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 8.5 A||0.23|0.27|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|2600<br>328<br>72||pF<br>pF<br>pF|
|Coss eq.<br>(1)|Equivalent output capacitance|VDS=0, VDS= 0 to 640 V|-|187||pF|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 250 V, ID= 8.5 A,<br>RG= 4.7Ω, VGS= 10 V<br>(see_Figure 16_)|-|28<br>20<br>70<br>15||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 400 V, ID= 17 A,<br>VGS= 10 V<br>(see_Figure 17_)|-|85<br>15.5<br>42|119|nC<br>nC<br>nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||17<br>68|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 17 A, VGS= 0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A,<br>di/dt = 100 A/µs<br>VR= 100 V<br>(see_Figure 18_)|-|355<br>3.90<br>22||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A,<br>di/dt = 100 A/µs<br>VR= 100 V, Tj = 150 °C<br>(see_Figure 18_)|-|440<br>5.72<br>26||ns<br>µC<br>A|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Pulse width limited by safe operating area 

**Table 8. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO|Gate-source breakdown<br>voltage|Igs=± 1mA (open drain)|30|-||V|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220** 

**==> picture [157 x 154] intentionally omitted <==**

**Figure 3. Thermal impedance for TO-220** 

**==> picture [159 x 155] intentionally omitted <==**

## **Figure 4. Safe operating area for TO-220FP** 

**==> picture [156 x 154] intentionally omitted <==**

**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [159 x 154] intentionally omitted <==**

## **Figure 6. Output characteristics** 

**==> picture [154 x 154] intentionally omitted <==**

## **Figure 7. Transfer characteristics** 

**==> picture [156 x 154] intentionally omitted <==**

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**Electrical characteristics** 

## **Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on-resistance** 

**==> picture [173 x 155] intentionally omitted <==**

**==> picture [167 x 153] intentionally omitted <==**

## **Figure 10. Gate charge vs gate-source voltage Figure 11.** 

## **Capacitance variations** 

**==> picture [166 x 154] intentionally omitted <==**

**==> picture [169 x 154] intentionally omitted <==**

**Figure 12. Normalized gate threshold voltage vs temperature** 

**==> picture [169 x 155] intentionally omitted <==**

**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [169 x 154] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 14. Maximum avalanche energy vs temperature** 

**==> picture [167 x 154] intentionally omitted <==**

**Figure 15. Source-drain diode forward characteristic** 

**==> picture [167 x 155] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20.  Unclamped inductive waveform Figure 21. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**Table 9. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

## **Figure 22. TO-220FP drawing** 

**==> picture [405 x 578] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 23. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Apr-2012|1|First release.|



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## Links

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