# Power MOSFET, N Channel, 80 V, 120 A, 3000 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807214/)

**URL**: https://novapart.co/products/STP170N8F7/power-mosfet-n-channel-80-v-120-a-3000-ohm-to
**SKU**: STP170N8F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5000
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.003ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 3000µohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807214/)

## **STP170N8F7** 

N-channel 80 V, 0.003 Ω typ., 120 A, STripFET™ F7 Power MOSFET in TO-220 package 

**Datasheet — production data** 

## **Features** 

**==> picture [72 x 78] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


|**Order code**|**VDS**|**RDS(on)max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STP170N8F7|80 V|0.0039Ω|120 A|250 W|



- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

## **Applications** 

- Switching applications 

## **Figure 1. Internal schematic diagram** 

## **Description** 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP170N8F7|170N8F7|TO-220|Tube|



_www.st.com_ 

February 2015 

DocID024550 Rev 3 

1/12 

This is information on a product in full production. 

**Contents** 

**STP170N8F7** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|80|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous)|120|A|
|ID<br>(1)|Drain current (continuous) at TC= 100 °C|120|A|
|IDM|Drain current (pulsed)|480|A|
|PTOT<br>(1)|Total dissipation at TC= 25 °C|250|W|
|TJ|Operating junction temperature|-55 to 175|°C|
|Tstg|Storage temperature||°C|



1. Limited by package and rated according to Rthj-c. 

|**Table 3. Thermal resistance**|
|---|
|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>Rthj-case<br>Thermal resistance junction-case<br>0.6<br>°C/W<br>Rthj-amb<br>Thermal resistance junction-ambient max.<br>62.5<br>°C/W<br>~~————~~|
|**Table 4. Avalanche data**|
|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>IAV<br>Not-repetitive avalanche current,<br>(pulse width limited by Tjmax)<br>35<br>A<br>EAS<br>Single pulse avalanche energy<br>(starting TJ = 25 °C, ID= IAV, VDD= 50 V)<br>615<br>mJ<br>~~—a~~|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0, ID= 250 µA|80|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0, VDS= 80 V|||1|µA|
|||VGS= 0, VDS= 80 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate body leakage current|VDS= 0, VGS= +20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2.5||4.5|V|
|RDS(on)|Static drain-source<br>on- resistance|VGS= 10 V, ID= 60 A||0.003|0.0039|Ω|



**Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit** Ciss Input capacitance - 8710 - pF Coss Output capacitance VGS=0, VDS =40 V, - 1330 - pF f=1 MHz Reverse transfer Crss capacitance - 78 - pF Qg Total gate charge VDD=40 V, ID = 120 A - 120 - nC Qgs Gate-source charge VGS =10 V - 43 - nC Qgd Gate-drain charge _Figure 14_ - 26 - nC **Table 7. Switching times** ~~se) HE~~ **Symbol Parameter Test conditions Min. Typ. Max. Unit** td(on) Turn-on delay time - 38 - ns tr Rise time VDD= 40 V, ID= 60 A, - 53 - ns RG= 4.7 Ω, VGS= 10 V td(off) Turn-off delay time _Figure 13_ - 79 - ns tf Fall time - 37 - ns ~~=~~ DocID024550 Rev 3 

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**STP170N8F7** 

**Electrical characteristics** 

**Table 8. Source-drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||120|A|
|ISDM<br>(1)<br>~~a~~<br>~~a~~|Source-drain current (pulsed)||-||480|A|
|VSD<br>(2)<br>~~a~~<br>~~a~~<br>~~a~~|Forward on voltage<br>~~ee~~|VGS=0, ISD= 120 A|-<br>~~TT~~|~~TT~~|1.2<br>~~TT~~|V<br>~~TT~~|
|trr<br>~~a~~<br>~~a~~<br>~~a~~|Reverse recovery time<br>~~ee~~|ISD= 120 A,<br>di/dt = 100 A/µs,<br>VDD= 64 V, Tj=150 °C|-<br>~~TT~~|54<br>~~TT~~|~~TT~~|ns<br>~~TT~~|
|Qrr<br>~~a~~|Reverse recovery charge<br>~~ee~~||-<br>~~TT~~<br>~~tt~~|78<br>~~TT~~<br>~~tt~~|~~TT~~<br>~~tt~~|nC<br>~~TT~~<br>~~tt~~|
|IRRM<br>~~a~~|Reverse recovery current||-<br>~~tT~~|2.9<br>~~tT~~|~~tT~~|A<br>~~tT~~|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration=300 µs, duty cycle 1.5%. 

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**STP170N8F7** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**==> picture [196 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG300420141527SA<br>K<br>δ=0.5<br>Freee gt<br>0.2<br>Yb 0.1<br>\f 0.05<br>10 [-1] y<br>0.02 Zin = k Reny- c<br>“i 0.01 6= tp/T<br>Single pulse<br>T<br>10 [-2] el]<br>10 [-5] 10-4 10 [-3] 10 [-2] 10 [-1] 10 [0] tp(s)<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

## **Figure 8.  Capacitance variations** 

**Figure 10. Normalized on-resistance vs temperature** 

**Figure 9. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized V(BR)DSS vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [443 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 17. Unclamped inductive waveform** 

## **Figure 18. Switching time waveform** 

**==> picture [444 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>tdon tr tdoff tf<br>VD<br>90% 90%<br>IDM<br>10%<br>10% VDS<br>ID 0<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. TO-220 type A drawing<br>**----- End of picture text -----**<br>


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**STP170N8F7** 

**Package mechanical data** 

**Table 9. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a~~ ∅ P 3.75 3.85 ~~Ge~~ Q 2.65 2.95 ~~Ge~~ 

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**STP170N8F7** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Apr-2013|1|First release.|
|15-May-2014|2|– The part number STH170N8F7-2 has been moved to a separate<br>datasheet<br>– Modified: RDS(on)in cover page<br>– Modified:_Figure 1_<br>– Modified: ID(TC= 100 °C), PTOTand EASvalues in_Table 2_<br>– Modified: Rthj-casevalue in_Table 3_<br>– Added:_Table 4_<br>– Modified: IDSS, VGS(th)and RDS(on)values in_Table 5_<br>– Modified: the entire typical values in table_Table 6_,_7_and_8_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Section Figure 19.: TO-220 type A drawing_<br>– Minor text changes|
|20-Feb-2015|3|– Updated title, features and description in cover page.|



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**STP170N8F7** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

12/12 DocID024550 Rev 3 



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