# Power MOSFET, N Channel, 40 V, 120 A, 0.0022 ohm, TO-220AB, Through Hole ![Product image](https://novapart.co/image/farnell:2807213/) **URL**: https://novapart.co/products/STP160N4LF6/power-mosfet-n-channel-40-v-120-a-00022-ohm-to **SKU**: STP160N4LF6 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4420 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | DeepGATE STripFET VI | | Power Dissipation | 150W | | Transistor Mounting | Through Hole | | Transistor Polarity | N Channel | | Power Dissipation Pd | 150W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.0022ohm | | Transistor Case Style | TO-220AB | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 120A | | Drain Source On State Resistance | 0.0022ohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2807213/) ## **STP160N4LF6** N-channel 40 V, 0.0021 m Ω typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package **Datasheet** - **production data** ## **Features** **==> picture [90 x 102] intentionally omitted <==** **----- Start of picture text -----**
TAB
3
2
1
TO-220
**----- End of picture text -----**
|**Features**||||| |---|---|---|---|---| |**Order code**|**VDS**|**RDS(on)max**|**ID**|**PTOT**| |STP160N4LF6|40 V|0.0029Ω|120 A|150 W| - RDS(on) * Qg industry benchmark - Extremely low on-resistance RDS(on) - Logic level drive - High avalanche ruggedness - 100% avalanche tested ## **Applications** **Figure 1. Internal schematic diagram** - Switching applications ## **Description** This device is an N-channel Power MOSFET developed using the 6[th] generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. **Table 1. Device summary** |**Order code**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STP160N4LF6|160N4LF6|TO-220|Tube| _www.st.com_ April 2014 DocID026266 Rev 1 1/14 This is information on a product in full production. **Contents** **STP160N4LF6** |**Contents**|**Contents**| |---|---| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| 2/14 DocID026266 Rev 1 **STP160N4LF6** **Electrical ratings** ## **1 Electrical ratings** **Table 2. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VDS|Drain-source voltage|40|V| |VGS|Gate-source voltage|± 20|V| |ID|Drain current (continuous) at TC= 25 °C|120|A| |ID|Drain current (continuous) at TC= 100 °C|100|A| |IDM
(1)|Drain current (pulsed)|480|A| |PTOT|Total dissipation at TC= 25 °C|150|W| ||Derating factor|1|W/°C| |IAS|Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)|60|A| |EAS|Single pulse avalanche energy|323|mJ| |Tstg|Storage temperature|-55 to 175|°C| |Tj|Operating junction temperature||| 1. Pulse width is limited by safe operating area **Table 3. Thermal resistance** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |Rthj-case|Thermal resistance junction-case max|1.0|°C/W| |Rthj-a|Thermal resistance junction-ambient max|62.5|°C/W| DocID026266 Rev 1 3/14 **STP160N4LF6** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE = 25 °C unless otherwise specified). **Table 4. Static** |||**Table 4. Static**||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage (VGS= 0)|ID= 250 μA|40|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= 20 V
VDS= 20 V, Tc = 125 °C|||1
10|μA
μA| |IGSS|Gate body leakage current
(VDS= 0)|VGS= ± 20 V|||±100|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|1|||V| |RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 60 A||0.0022|0.0029|Ω| |||VGS= 5 V, ID= 60 A||0.0024|0.0031|Ω| **Table 5. Dynamic** |**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |Ciss|Input capacitance|VDS= 20 V, f=1 MHz,
VGS= 0 V|-|8130|-|pF| |Coss|Output capacitance||-|770|-|pF| |Crss|Reverse transfer
capacitance||-|670|-|pF| |Qg|Total gate charge|VDD= 20 V, ID= 60 A
VGS= 10 V
_(seeFigure 14)_|-|181|-|nC| |Qgs|Gate-source charge||-|22|-|nC| |Qgd|Gate-drain charge||-|46|-|nC| **Table 6. Switching on/off (inductive load)** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |td(on)|Turn-on delay time|VDD= 20 V, ID= 60 A,
RG= 4.7Ω, VGS= 10 V
_(seeFigure 15)_|-|20|-|ns| |tr|Rise time||-|131|-|ns| |td(off)|Turn-off delay time||-|205|-|ns| |tf|Fall time||-|116||ns| 4/14 DocID026266 Rev 1 **STP160N4LF6** **Electrical characteristics** **Table 7. Source drain diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ISD|Source-drain current||-||120|A| |ISDM
(1)|Source-drain current (pulsed)||-||480|A| |VSD
(2)|Forward on voltage|ISD= 120 A, VGS= 0|-||0.97|V| |trr|Reverse recovery time|ISD= 120 A,
di/dt = 100 A/μs,
VDD= 32 V
_(seeFigure 17)_|-|57||ns| |Qrr|Reverse recovery charge||-|53||nC| |IRRM|Reverse recovery current||-|1.86||A| 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID026266 Rev 1 5/14 **STP160N4LF6** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
ID AM15806v1
(A) Tj=175°C
Tc=25°C
Single pulse
100
100 µs
1ms
10
10ms
1
0.1
0.1 1 10 VDS(V)
DS(on)
Operation in this area is
Limited by max R
**----- End of picture text -----**
## **Figure 3. Thermal impedance** **==> picture [175 x 167] intentionally omitted <==** **Figure 4. Output characteristics** **==> picture [226 x 170] intentionally omitted <==** **----- Start of picture text -----**
AM15797v1
ID
(A) V GS = 6, 7, 8, 9, 10 V V GS = 5 V
250
VGS= 4 V
200
150
100
50
VGS= 3 V
0
0 0.2 0.4 0.6 0.8 VDS(V)
**----- End of picture text -----**
## **Figure 6. Gate charge vs gate-source voltage** ## **Figure 5. Transfer characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM15798v1
ID
(A)
VDS= 0.6V
250
200
150
100
50
0
0 2 4 6 8 VGS(V)
**----- End of picture text -----**
## **Figure 7. Static drain-source on-resistance** **==> picture [462 x 177] intentionally omitted <==** **----- Start of picture text -----**
VGS AM15799v1 RDS(on) AM15800v2
(V) (mΩ)
VDD=20V V GS =10V
12 I D =60V 2.2
10
2.1
8
2.0
6
1.9
4
1.8
2
0 1.7
0 50 100 150 200 Qg(nC) 10 20 30 40 50 60 70 ID(A)
**----- End of picture text -----**
6/14 DocID026266 Rev 1 **STP160N4LF6** **Electrical characteristics** **Figure 8. Capacitance variations** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
C AM15801v1
(pF)
10000
Ciss
1000
Coss
Crss
100
0 8 16 24 32 VDS(V)
**----- End of picture text -----**
**Figure 10. Normalized gate threshold voltage vs temperature** ## **Figure 9. Normalized V(BR)DSS vs temperature** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
V(BR)DSS AM15802v1
(norm)
1.1 I D =250 µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
0.92
-75 -25 25 75 125 TJ(°C)
**----- End of picture text -----**
**Figure 11. Normalized on-resistance vs temperature** **==> picture [462 x 176] intentionally omitted <==** **----- Start of picture text -----**
VGS(th) AM15803v1 RDS(on) AM15804v1
(norm) (norm)
1.2 VGS=10V
2
ID=250 µA
1
1.5
0.8
0.6
1
0.4
0.5
0.2
0 0
-75 -25 25 75 125 TJ(°C) -75 -50 -25 0 25 50 75 100 125 150 TJ(°C)
**----- End of picture text -----**
**Figure 12. Source-drain diode forward characteristics** **==> picture [228 x 171] intentionally omitted <==** **----- Start of picture text -----**
VSD AM15805v1
(V) TJ=-55°C
0.9
0.85 TJ=25 ° C
0.8
0.75
0.7
0.65 TJ=150 ° C
0.6
0.55
0.5
0 20 40 60 80 ISD(A)
**----- End of picture text -----**
DocID026266 Rev 1 7/14 **STP160N4LF6** **Test circuits** ## **3 Test circuits** **Figure 13. Switching times test circuit for resistive load** **Figure 14. Gate charge test circuit** **==> picture [462 x 162] intentionally omitted <==** **----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** **==> picture [462 x 346] intentionally omitted <==** **----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
8/14 DocID026266 Rev 1 **STP160N4LF6** **Test circuits** ## **Figure 19. Gate charge waveform** **==> picture [190 x 153] intentionally omitted <==** **----- Start of picture text -----**
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
**----- End of picture text -----**
DocID026266 Rev 1 9/14 **STP160N4LF6** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 10/14 DocID026266 Rev 1 **STP160N4LF6** **Package mechanical data** ## **Figure 20. TO-220 type A drawing** DocID026266 Rev 1 11/14 **STP160N4LF6** **Package mechanical data** **Table 8. TO-220 type A mechanical data** ||**Table 8. TO-220 type A mechanical data**|**Table 8. TO-220 type A mechanical data**|**Table 8. TO-220 type A mechanical data**| |---|---|---|---| |**Dim.**|**mm**||| ||**Min.**|**Typ.**|**Max.**| |A|4.40||4.60| |b|0.61||0.88| |b1|1.14||1.70| |c|0.48||0.70| |D|15.25||15.75| |D1||1.27|| |E|10||10.40| |e|2.40||2.70| |e1|4.95||5.15| |F|1.23||1.32| |H1|6.20||6.60| |J1|2.40||2.72| |L|13||14| |L1|3.50||3.93| |L20||16.40|| |L30||28.90|| |∅P|3.75||3.85| |Q|2.65||2.95| 12/14 DocID026266 Rev 1 **STP160N4LF6** **Revision history** ## **5 Revision history** **Table 9. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |24-Apr-2014|1|First release.| DocID026266 Rev 1 13/14 **STP160N4LF6** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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