# Power MOSFET, N Channel, 30 V, 120 A, 2500 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3367066/)

**URL**: https://novapart.co/products/STP160N3LL/power-mosfet-n-channel-30-v-120-a-2500-ohm-to-220
**SKU**: STP160N3LL
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4860
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET H6 |
| Qualification | - |
| Power Dissipation | 136W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 2500µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367066/)

## **STP160N3LL** 

N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STP160N3LL|30 V|3.2 mΩ|120 A|136 W|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STP160N3LL|160N3LL|TO-220|Tube|



This is information on a product in full production. 

_www.st.com_ 

June 2015 

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|**Contents**<br>**STP160N3LL**|**Contents**<br>**STP160N3LL**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>TO-220 type A package information ................................................ 10|
|**5**|**Revision history ............................................................................ 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|±20|V|
|ID<br>_(1)_|Drain current (continuous) at Tcase= 25 °C|120|A|
|ID|Drain current (continuous) at Tcase= 100 °C|112||
|IDM<br>_(2)_|Drain current (pulsed)|480||
|PTOT|Total dissipation at Tcase= 25 °C|136|W|
|EAS<br>_(3)_|Singlepulse avalanche energy|150|mJ|
|Tstg|Storage temperature|–55 to 175|°C|
|Tj|Operating junction temperature|||



## **Notes:** 

- (1) Current is limited by package. 

- (2) Pulse width is limited by safe operating area. 

- (3) starting Tj = 25 °C, ID = 40 A 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|1.1|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5||



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0 V, ID= 250 µA|30|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 30 V|||1|µA|
|||VGS= 0 V, VDS= 30 V,<br>Tcase= 125 °C|||10||
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|1||2.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 60 A||2.5|3.2|mΩ|
|||VGS= 4.5 V, ID= 60 A||3.2|4.2||



**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|3500|-|pF|
|Coss|Output capacitance||-|400|-||
|Crss|Reverse transfer<br>capacitance||-|380|-||
|Qg|Totalgate charge|VDD= 15 V, ID= 120 A,<br>VGS= 4.5 V (see_Figure 14: "Gate_<br>_charge test circuit"_)|-|42|-|nC|
|Qgs|Gate-source charge||-|9|-||
|Qgd|Gate-drain charge||-|18|-||
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0 A,<br>gate DC bias = 0 V,<br>magnitude of alternative<br>signal = 20 mV|-|1|-|Ω|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 15 V, ID= 60 A RG= 4.7 Ω,<br>VGS= 5 V (see_Figure 13:_<br>_"Switching times test circuit for_<br>_resistive load"_and_Figure 18:_<br>_"Switching time waveform"_)|-|19|-|ns|
|tr|Rise time||-|91|-||
|td(off)|Turn-off delaytime||-|24.5|-||
|tf|Fall time||-|23.4|-||



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**STP160N3LL Electrical characteristics** 

## **Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on voltage|VGS= 0 V, ISD= 60 A|-||1.1|V|
|trr|Reverse recoverytime|ISD= 120 A, di/dt = 100 A/µs,<br>VDD= 24 V (see_Figure 15: "Test_<br>_circuit for inductive load switching_<br>_and diode recovery times"_)|-|28.6||ns|
|Qrr|Reverse recovery<br>charge||-|22.8||nC|
|IRRM|Reverse recovery<br>current||-|1.6||A|



## **Notes:** 

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [156 x 143] intentionally omitted <==**

**Figure 3: Thermal impedance** 

**==> picture [145 x 145] intentionally omitted <==**

**Figure 4: Output characteristics** 

**==> picture [157 x 142] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [159 x 143] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [157 x 143] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

**==> picture [162 x 143] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 9: Normalized gate threshold voltage Figure 8: Capacitance variations vs temperature** 

**==> picture [161 x 142] intentionally omitted <==**

**==> picture [156 x 143] intentionally omitted <==**

**Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs temperature temperature** 

**==> picture [155 x 142] intentionally omitted <==**

**==> picture [159 x 142] intentionally omitted <==**

**Figure 12: Source-drain diode forward characteristics** 

**==> picture [155 x 143] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 13: Switching times test circuit for resistive load** 

**Figure 14: Gate charge test circuit** 

**==> picture [442 x 153] intentionally omitted <==**

**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**Figure 16: Unclamped inductive load test circuit** 

**Figure 17: Unclamped inductive waveform** 

**==> picture [62 x 32] intentionally omitted <==**

**Figure 18: Switching time waveform** 

**==> picture [87 x 118] intentionally omitted <==**

**==> picture [92 x 159] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 TO-220 type A package information** 

**Figure 19: TO-220 type A package outline** 

**==> picture [407 x 570] intentionally omitted <==**

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**Package information** 

**Table 8: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|31-Jul-2013|1|First release.|
|04-Jun-2015|2|Text edits and formatting changes throughout document<br>In section 2 Electrical characteristics:<br>- updated Table 4 Static<br>- updated Table 5 Dynamic<br>- updated Table 7 Source-drain diode<br>- added Section 2.1 Electrical charateristics (curves)<br>Updated and renamed Section 4 Package information (was Package<br>mechanical data)|
|26-Jun-2015|3|On cover page:<br>- updated Title and Description<br>In Section Electrical ratings:<br>- updated Table Absolute maximum ratings|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STP160N3LL/power-mosfet-n-channel-30-v-120-a-2500-ohm-to-220)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp160n3ll/mosfet-n-ch-30v-120a-175deg-c/dp/3367066)
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