# Power MOSFET, N Channel, 100 V, 110 A, 3600 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3886278/)

**URL**: https://novapart.co/products/STP150N10F7AG/power-mosfet-n-channel-100-v-110-a-3600-ohm-to-220
**SKU**: STP150N10F7AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6600
**Stock**: 100+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 Series |
| Qualification | AEC-Q101 |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 3600µohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3886278/)

**STP150N10F7AG** 

Datasheet 

Automotive N-channel 100 V, 4.2 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package 

## **Features** 

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**----- Start of picture text -----**<br>
TAB<br>1  [2 3]<br>TO-220<br>**----- End of picture text -----**<br>


|**Order code**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STP150N10F7AG|100 V|4.2 mΩ|110 A|



- Designed for automotive application 

- Standard level V GS(TH) 

- 175°C junction temperature 

- 100% avalanche rated 

**==> picture [119 x 122] intentionally omitted <==**

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D(2, TAB)<br>G(1)<br>S(3)<br>AM01475v1_noZen<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

## **Product status link** 

STP150N10F7AG 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STP150N10F7AG|
|**Marking**|150N10F7AG|
|**Package**|TO-220|
|**Packing**|Tube|



**DS13798** - **Rev 1** - **July 2021** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STP150N10F7AG Electrical ratings** 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|100|V|
|VGS|Gate-source voltage|±20|V|
|ID(1)|Drain current (continuous) at TC= 25 °C|110|A|
||Drain current (continuous) at TC= 100 °C|||
|IDM(2)|Drain current (pulsed)|440|A|
|PTOT|Total power dissipation at TC= 25 °C|250|W|
|IAV|Single pulse avalanche current (pulse width limited by maximum junction<br>temperature)|30|A|
|EAS|Single pulse avalanche energy<br>(TJ= 25 °C, ID= IAV, VDD= 25 V)|650|mJ|
|TJ|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



_1. Current limited by package._ 

_2. Pulse width limited by safe operating area._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance, junction-to-case|0.6|°C/W|
|RthJB(1)|Thermal resistance, junction-to-board|62.5|°C/W|



_1. When mounted on 1 inch² FR-4, 2 Oz copper board._ 

**DS13798** - **Rev 1** 

**page 2/12** 

**STP150N10F7AG Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 3. On/off-state** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 250 µA|100|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= max ratings|||1|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2.5|3.5|4.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 55 A||3.6|4.2|mΩ|



## **Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input<br>capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0 V|-|9000|-|pF|
|Coss|Output<br>capacitance|||2000||pF|
|Crss|Reverse<br>transfer<br>capacitance|||80||pF|
|Qg|Total gate<br>charge|VDD= 50 V, ID= 110 A, VGS= 10 V<br>(seeFigure 13. Test circuit for gate charge<br>behavior)|-|127|-|nC|
|Qgs|Gate-source<br>charge||-|56|-|nC|
|Qgd|Gate-drain<br>charge||-|32|-|nC|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on<br>delay time|VDD= 50 V, ID= 55 A,<br>RG= 4.7 mΩ, VGS= 10 V<br>(seeFigure 12. Test circuit for resistive load<br>switching timesandFigure 16. Unclamped<br>inductive waveform)|-|37|-|ns|
|tr|Rise time||-|54|-|ns|
|td(off)|Turn-off<br>delay time||-|68|-|ns|
|tf|Fall time||-|33|-|ns|



**DS13798** - **Rev 1** 

**page 3/12** 

**STP150N10F7AG Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD (1)|Forward on<br>voltage|ISD= 110 A, VGS= 0|-||1.2|V|
|trr|Reverse<br>recovery time|ISD= 110 A,<br>di/dt = 100 A/µs,<br>VDD= 80 V, Tj= 25°C (seeFigure 14. Test<br>circuit for inductive load switching and diode<br>recovery times)|-|60|-|ns|
|Qrr|Reverse<br>recovery<br>charge||-|83|-|nC|
|IRRM|Reverse<br>recovery<br>current||-|2.75|-|A|



_1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS13798** - **Rev 1** 

**page 4/12** 

**STP150N10F7AG Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [195 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Safe operating area<br>ID AM18051v1<br>(A)<br>100<br>10 100 µs<br>1 1 ms<br>Tj=175 °C 10 ms<br>Tc=25 °C<br>Single pulse<br>0.1<br>0.1 1 10 VDS(V)<br>Operation in this area is<br>DS(on)<br>Limited by max R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 2. Thermal impedance<br>K  GADG270720210943ZTH<br>0.2<br>0.1<br>0.05<br>10  [-1 ]<br>0.02<br>0.01 Z th = k*R thj-c<br>Single pulse δ = tp / Ƭ<br>10  [-2 ] tp Ƭ<br>10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] 10  [-1 ] tp (s)<br>**----- End of picture text -----**<br>


**Figure 3. Typical output characteristics** 

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ID GADG270720211229OCH<br>(A)<br>110<br>VGS = 7, 10 V<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>6 V<br>30<br>20<br>10<br>VGS = 4, 5 V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 VDS (V)<br>**----- End of picture text -----**<br>


**Figure 4. Typical transfer characteristics** 

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ID GADG270720210946TCH<br>(A)  TC =175°C<br>200<br>150<br>100<br>TC =25°C<br>50<br>0 TC =-55°C<br>0 1 2 3 4 5 6 7 VGS (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance<br>VGS GADG270720210940QVG RDS(on) GADG270720210945RID<br>(V)  (mΩ)<br>9<br>12<br>VDS =50V 8<br>ID =110A<br>10 7<br>6<br>8 VGS =10V<br>5<br>6<br>4<br>4 3<br>2<br>2<br>1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 Qg (nC) 0 20 40 60 80 100 120 140 160 ID (A)<br>**----- End of picture text -----**<br>


**DS13798** - **Rev 1** 

**page 5/12** 

**STP150N10F7AG Electrical characteristics (curves)** 

**Figure 7. Typical capacitance characteristics** 

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**----- Start of picture text -----**<br>
C  GADG270720210942CVR<br>(pF)<br>10  [4 ] CISS<br>10  [3 ]<br>COSS<br>10  [2 ]<br>CRSS<br>10  [1 ]<br>0 20 40 60 80 100 VDS (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 8. Normalized gate threshold voltage vs<br>temperature<br>VGS(th) GADG270720210944VTH<br>(norm.)<br>1.15<br>1.05<br>0.95<br>0.85<br>0.75<br>ID = 250 µA<br>0.65<br>0.55<br>0.45<br>-75 -25 25 75 125 175 Tj (°C)<br>**----- End of picture text -----**<br>


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Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature<br>RDS(on) GADG270720210943RON V(BR)DSS GADG270720210944BDV<br>(norm.)  (norm.)<br>1.08<br>2.0<br>1.06<br>1.8<br>1.04 ID = 250 µA<br>1.6 VGS = 10 V<br>ID = 55 A 1.02<br>1.4 1.00<br>1.2 0.98<br>0.96<br>1.0<br>0.94<br>0.8<br>0.92<br>0.6 0.90<br>-75 -25 25 75 125 175 Tj (°C) -75 -25 25 75 125 175 Tj (°C)<br>**----- End of picture text -----**<br>


## **Figure 11. Source-drain diode forward characteristics** 

**==> picture [183 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD ADG270720210900MT<br>(V)<br>TJ =-55°C<br>1.0<br>TJ =25°C<br>0.8<br>0.6<br>TJ =175°C<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 ISD (A)<br>**----- End of picture text -----**<br>


**DS13798** - **Rev 1** 

**page 6/12** 

**STP150N10F7AG Test circuits** 

## **3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

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Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for inductive load switching and<br>Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**Figure 16. Unclamped inductive waveform** 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>VD<br>IDM<br>ID<br>VDD VDD<br>AM01472v1<br>**----- End of picture text -----**<br>


**Figure 17. Switching time waveform** 

**==> picture [182 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
ton toff<br>td(on) tr td(off) tf<br>90% 90%<br>0 10% VDS 10%<br>VGS 90%<br>0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS13798** - **Rev 1** 

**page 7/12** 

**STP150N10F7AG Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1** 

## **TO-220 type A package information** 

## **Figure 18. TO-220 type A package outline** 

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0015988_typeA_Rev_23<br>**----- End of picture text -----**<br>


**DS13798** - **Rev 1** 

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**STP150N10F7AG TO-220 type A package information** 

**Table 7. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
|Slug flatness||0.03|0.10|



**DS13798** - **Rev 1** 

**page 9/12** 

**STP150N10F7AG** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|27-Jul-2021|1|First release|



**DS13798** - **Rev 1** 

**page 10/12** 

**STP150N10F7AG Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**||



**DS13798** - **Rev 1** 

**page 11/12** 

**STP150N10F7AG** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2021 STMicroelectronics – All rights reserved 

**DS13798** - **Rev 1** 

**page 12/12** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp150n10f7ag/mosfet-aecq101-n-ch-100v-110a/dp/3886278)
---

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