# Power MOSFET, N Channel, 60 V, 80 A, 3100 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2807211/)

**URL**: https://novapart.co/products/STP140N6F7/power-mosfet-n-channel-60-v-80-a-3100-ohm-to-220ab
**SKU**: STP140N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 158W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 3100µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807211/)

## **STP140N6F7** 

N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STP140N6F7|60 V|0.0035 Ω|80 A|158 W|



- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STP140N6F7|140N6F7|TO-220|Tube|



This is information on a product in full production. 

_www.st.com_ 

May 2015 

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|**Contents**<br>**STP140N6F7**|**Contents**<br>**STP140N6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 5|
|**3**|**Test circuits ..................................................................................... 7**|
|**4**|**Package information ....................................................................... 8**|
||4.1<br>TO-220 type A package information .................................................. 9|
|**5**|**Revision history ............................................................................ 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|±20|V|
|ID<br>_(1)_|Drain current (continuous) at Tcase= 25 °C|80|A|
||Drain current (continuous) at Tcase= 100 °C|80||
|IDM<br>_(2)_|Drain current (pulsed)|320|A|
|PTOT|Total dissipation at Tcase= 25 °C|158|W|
|EAS<br>_(3)_|Singlepulse avalanche energy|160|mJ|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Maximumjunction temperature|175||



## **Notes:** 

- (1) Current is limited by package. 

- (2) Pulse width is limited by safe operating area. 

- (3) Starting Tj = 25°C, ID = 40 A, VDD = 30 V. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|0.95|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|62.5||



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|60|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 60 V|||1|µA|
|||VGS= 0 V, VDS= 60 V,<br>Tcase= 125 °C|||100||
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= +20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 40 A||0.0031|0.0035|Ω|



## **Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|3100|-|pF|
|Coss|Output capacitance||-|1520|-||
|Crss|Reverse transfer<br>capacitance||-|193|-||
|Qg|Total gate charge|VDD= 30 V, ID= 80 A,<br>VGS= 10 V (see_Figure 14:_<br>_"Gate charge test circuit"_)|-|55|-|nC|
|Qgs|Gate-source charge||-|19|-||
|Qgd|Gate-drain charge||-|18|-||
|||**Table 6: Switching times**|||||
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 30 V, ID= 40 A<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 13: "Switching times_<br>_test circuit for resistive load"_<br>and_Figure 18: "Switching_<br>_time waveform"_)|-|24|-|ns|
|tr|Rise time||-|68|-||
|td(off)|Turn-off delay time||-|39|-||
|tf|Fall time||-|20|-||



## **Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on voltage|VGS= 0 V, ISD= 80 A|-||1.2|V|
|trr|Reverse recovery time|ISD= 80 A, di/dt = 100 A/µs,<br>VDD= 48 V (see_Figure 15:_<br>_"Test circuit for inductive_<br>_load switching and diode_<br>_recovery times"_)|-|42.4||ns|
|Qrr|Reverse recovery<br>charge||-|38.2||nC|
|IRRM|Reverse recovery<br>current||-|1.8||A|



## **Notes:** 

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

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**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>**----- End of picture text -----**<br>


**==> picture [144 x 144] intentionally omitted <==**

**Figure 4: Output characteristics** 

**==> picture [160 x 143] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [160 x 142] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [148 x 143] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

**==> picture [162 x 142] intentionally omitted <==**

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**Electrical characteristics** 

**==> picture [389 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Normalized gate threshold voltage<br>Figure 8: Capacitance variations<br>vs temperature<br>**----- End of picture text -----**<br>


**==> picture [398 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Normalized on-resistance vs<br>temperature  Figure 11: Normalized V(BR)DSS vs temperature<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

**==> picture [165 x 143] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 13: Switching times test circuit for resistive Figure 14: Gate charge test circuit load** 

**==> picture [215 x 94] intentionally omitted <==**

**==> picture [224 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>I G = CONST<br>Vi ≤ V GS 100 Ω D.U.T.<br>2.7 k Ω VG<br>2200 μ F<br>47 kΩ<br>1 kΩ<br>PW<br>AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit** 

**==> picture [216 x 152] intentionally omitted <==**

**==> picture [221 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A A<br>D<br>FAST L=100 µH<br>G D.U.T. DIODE<br>S B 3.3 1000<br>25 Ω B B D µF µF VDD<br>G D.U.T.<br>RG S<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [460 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18: Switching time waveform<br>Figure 17: Unclamped inductive waveform<br>V t on toff<br>(BR)DSS<br>t d(on) t r t d(off) t f<br>VD<br>90% 90%<br>I DM<br>10%<br>I D 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 TO-220 type A package information** 

**Figure 19: TO-220 type A package outline** 

**==> picture [407 x 570] intentionally omitted <==**

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**Package information** 

**Table 8: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-Apr-2015|1|First release.|
|19-May-2015|2|In section 2.1 Electrical characteristics (curves):<br>- updated Figure 8: Capacitance variations|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp140n6f7/mosfet-n-ch-60v-80a-to-220ab/dp/2807211)
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