# Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1291980/)

**URL**: https://novapart.co/products/STP12NM50/power-mosfet-n-channel-550-v-12-a-035-ohm-to-220
**SKU**: STP12NM50
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9100
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STP |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 550V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.35ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1291980/)

## **STB12NM50T4, STP12NM50, STP12NM50FP** 

Datasheet 

N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages 

**==> picture [140 x 228] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1<br>D  PAK2 3<br>2<br>1<br>TO-220FP<br>TAB<br>1  [2 3]<br>TO-220<br>D(2, TAB)<br>G(1)<br>S(3)<br>NG1D2TS3<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STB12NM50T4|500 V|350 mΩ|12 A|
|STP12NM50||||
|STP12NM50FP||||



- 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Applications** 

- Switching applications 

## **Description** 

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. 

## **Product status link** 

STB12NM50T4 STP12NM50 STP12NM50FP 

**DS1944** - **Rev 12** - **October 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Sbl**|**Pt**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|
|**ymo**|**arameer**|**D²PAK, TO-220**|**TO-220FP**|**n**|
|VGS|Gate-source voltage|±30||V|
|ID|Drain current (continuous) at TC= 25 °C|12|12(1)|A|
||Drain current (continuous) at TC= 100 °C|7.5|7.5(1)||
|IDM(2)|Drain current pulsed|48|48(1)|A|
|PTOT|Total power dissipation at TC= 25 °C|160|35|W|
|VISO|Insulation withstand voltage (RMS) from all three leads to<br>external heat sink (t = 1 s, TC= 25 °C)||2.5|kV|
|dv/dt(3)|Peak diode recovery voltage slope|15||V/ns|
|TJ|Operating junction temperature range|-65 to 150||°C|
|Tstg|Storage temperature range|||°C|



_1. Limited by maximum junction temperature._ 

_2. Pulse width limited by safe operating area._ 

_3. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS._ 

## **Table 2. Thermal data** 

|**Sbl**|**Pt**|**Value**|**Value**|**Value**|**Uit**|
|---|---|---|---|---|---|
|**ymo**|**arameer**|**D²PAK**|**TO-220**|**TO-220FP**|**n**|
|Rthj-case|Thermal resistance junction-case|2.78||3.57|°C/W|
|Rthj-a|Thermal resistance junction-ambient|62.5|||°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|35|||°C/W|



_1. When mounted on an 1-inch² FR-4, 2 Oz copper board._ 

## **Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAS|Avalanche current, repetitive or not repetitive<br>(pulse width limited by TJmax)|6|A|
|EAS|Single-pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAS, VDD= 50 V)|400|mJ|



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**STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics** 

**2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 μA|500|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 500 V|||1|µA|
|||VGS= 0 V, VDS= 500 V, TC= 125 °C(1)|||10||
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±30 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|4|5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 6 A||300|350|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|1000|-|pF|
|Coss|Output capacitance||-|250|-|pF|
|Crss|Reverse transfer capacitance||-|20|-|pF|
|Coss eq.(1)|Equivalent output capacitance|VDS= 0 to 400 V, VGS= 0 V|-|90|-|pF|
|td(on)|Turn-on Delay Time|VDD= 250 V, ID= 6 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 13. Test circuit for resistive<br>load switching timesand<br>Figure 18. Switching time waveform)|-|20|-|ns|
|tr|Rise Time||-|10|-|ns|
|Qg|Total gate charge|VDD= 400 V, ID= 12 A, VGS= 0 to 10 V<br>(seeFigure 14. Test circuit for gate<br>charge behavior)|-|28|-|nC|
|Qgs|Gate-source charge||-|8|-|nC|
|Qgd|Gate-drain charge||-|16|-|nC|
|Rg|Gate input resistance|f = 1 MHz, gate DC Bias = 0,<br>test signal level = 20 mV, open drain|-|1.6|-|Ω|



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

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**page 3/20** 

**STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||12|A|
|ISDM (1)|Source-drain current (pulsed)||-||48|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 12 A|-||1.5|V|
|trr|Reverse recovery time|ISD= 12 A, di/dt = 100 A/µs,<br>VDD= 100 V<br>(seeFigure 15. Test circuit for inductive<br>load switching and diode recovery times)|-|270||ns|
|Qrr|Reverse recovery charge||-|2.23||µC|
|IRRM|Reverse recovery current||-|16.5||A|
|trr|Reverse recovery time|ISD= 12 A, di/dt = 100 A/µs,<br>VDD= 100 V, TJ= 150 °C<br>(seeFigure 15. Test circuit for inductive<br>load switching and diode recovery times)|-|340||ns|
|Qrr|Reverse recovery charge||-|3||µC|
|IRRM|Reverse recovery current||-|18||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

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**STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for D²PAK and TO-220** 

**Figure 2. Thermal impedance for D²PAK and TO-220** 

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HV27510<br>**----- End of picture text -----**<br>


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**Figure 3. Safe operating area for TO-220FP** 

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HV27450<br>**----- End of picture text -----**<br>


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**Figure 5. Output characteristics** 

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HV00002<br>**----- End of picture text -----**<br>


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**Figure 4. Thermal impedance for TO-220FP** 

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K GC20521<br>δ =0.5<br>0.2<br>0.1<br>10 [-1]<br>0.05<br>0.02<br>0.01<br>10 [-2]<br>Single pulse Zδ =tth= pK*R/ Ƭ thJ-c<br>10 [-3] tp  Ƭ<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [-0] tp(s)<br>**----- End of picture text -----**<br>


**Figure 6. Transfer characteristics** 

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HV00003<br>**----- End of picture text -----**<br>


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**STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics (curves)** 

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Figure 7. Static drain-source on-resistance Figure 8. Gate charge vs gate-source voltage<br>HV00004 HV00005<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance variations** 

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GC85600<br>**----- End of picture text -----**<br>


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**Figure 10. Normalized gate threshold voltage vs temperature** 

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GC74100<br>**----- End of picture text -----**<br>


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Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics<br>GC85610 GC85620<br>**----- End of picture text -----**<br>


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**STB12NM50T4, STP12NM50, STP12NM50FP Test circuits** 

**3 Test circuits** 

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Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15. Test circuit for inductive load switching and<br>Figure 16. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 18. Switching time waveform<br>Figure 17. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD<br>VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


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**STB12NM50T4, STP12NM50, STP12NM50FP Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 D²PAK (TO-263) type A package information** 

**Figure 19. D²PAK (TO-263) type A package outline** 

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**STB12NM50T4, STP12NM50, STP12NM50FP D²PAK (TO-263) type A package information** 

**Table 7. D²PAK (TO-263) type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|7.75|8.00|
|D2|1.10|1.30|1.50|
|E|10.00||10.40|
|E1|8.30|8.50|8.70|
|E2|6.85|7.05|7.25|
|e||2.54||
|e1|4.88||5.28|
|H|15.00||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.40||
|V2|0°||8°|



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**page 9/20** 

**STB12NM50T4, STP12NM50, STP12NM50FP D²PAK (TO-263) type A package information** 

**Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)** 

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**STB12NM50T4, STP12NM50, STP12NM50FP TO-220 type A package information** 

**4.2 TO-220 type A package information** 

## **Figure 21. TO-220 type A package outline** 

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0015988_typeA_Rev_23<br>**----- End of picture text -----**<br>


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**STB12NM50T4, STP12NM50, STP12NM50FP TO-220 type A package information** 

**Table 8. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
|Slug flatness||0.03|0.10|



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**STB12NM50T4, STP12NM50, STP12NM50FP TO-220FP package information** 

**4.3 TO-220FP package information** 

**Figure 22. TO-220FP package outline** 

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**STB12NM50T4, STP12NM50, STP12NM50FP TO-220FP package information** 

**Table 9. TO-220FP package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|B|2.50||2.70|
|D|2.50||2.75|
|E|0.45||0.70|
|F|0.75||1.00|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.20|
|G1|2.40||2.70|
|H|10.00||10.40|
|L2||16.00||
|L3|28.60||30.60|
|L4|9.80||10.60|
|L5|2.90||3.60|
|L6|15.90||16.40|
|L7|9.00||9.30|
|Dia|3.00||3.20|



**DS1944** - **Rev 12** 

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**STB12NM50T4, STP12NM50, STP12NM50FP D²PAK packing information** 

## **4.4 D²PAK packing information** 

**Figure 23. D²PAK tape outline** 

**DS1944** - **Rev 12** 

**page 15/20** 

**STB12NM50T4, STP12NM50, STP12NM50FP D²PAK packing information** 

**Figure 24. D²PAK reel outline** 

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**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 10. D²PAK tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Base quantity||1000|
|P2|1.9|2.1|Bulk quantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**STB12NM50T4, STP12NM50, STP12NM50FP Ordering information** 

## **5 Ordering information** 

**Table 11. Order codes** 

|**Order codes**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STB12NM50T4|B12NM50|D²PAK|Tape and reel|
|STP12NM50|P12NM50|TO-220|Tube|
|STP12NM50FP|P12NM50FP|TO-220FP|Tube|



**DS1944** - **Rev 12** 

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**STB12NM50T4, STP12NM50, STP12NM50FP** 

## **Revision history** 

**Table 12. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|14-Mar-2004|8|Preliminary version|
|15-Feb-2006|9|New voltage value on first page at tjmax.|
|05-Apr-2006|10|Inserted ecopack indication|
|27-Jul-2006|11|New template, no content change|
|22-Oct-2020|12|The part number STB12NM50-1 have been moved to a separate datasheet and the document<br>has been updated accordingly.<br>Updated cover page.<br>UpdatedSection  1  Electrical ratingsandSection  2  Electrical characteristics.<br>Added SectionSection  5  Ordering information.<br>Minor text changes.|



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**STB12NM50T4, STP12NM50, STP12NM50FP Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**||
||**2.1**|Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**||
||**4.1**|D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**|TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**|TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
||**4.4**|D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17**||
|**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18**|



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**page 19/20** 

**STB12NM50T4, STP12NM50, STP12NM50FP** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

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© 2020 STMicroelectronics – All rights reserved 

**DS1944** - **Rev 12** 

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## Links

- [View this product on Novapart](https://novapart.co/products/STP12NM50/power-mosfet-n-channel-550-v-12-a-035-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stp12nm50/mosfet-n-to-220/dp/1291980)
---

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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