# Power MOSFET, N Channel, 300 V, 9 A, 0.4 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:9935533/)

**URL**: https://novapart.co/products/STP12NK30Z/power-mosfet-n-channel-300-v-9-a-04-ohm-to-220
**SKU**: STP12NK30Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8270
**Stock**: 100+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935533/)

**==> picture [63 x 41] intentionally omitted <==**

## **STP12NK30Z** 

N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected Su erMESH™Power MOSFET p 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**(1)|**Pw**(1)|
|---|---|---|---|---|
|STP12NK30Z|300 V|< 0.4 Ω|9 A|90 W|



- I TYPICAL RDS(on) = 0.36 Ω 

- I EXTREMELY HIGH dv/dt CAPABILITY 

- I IMPROVED ESD CAPABILITY 

- I 100% AVALANCHE RATED 

- I GATE CHARGE MINIMIZED 

- I VERY LOW INTRINSIC CAPACITANCES 

- I VERY GOOD MANUFACTURING REPEATIBILITY 

## **DESCRIPTION** 

The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products. 

## **APPLICATIONS** 

- I LIGHTING 

- I IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC 

**==> picture [225 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


## **INTERNAL SCHEMATIC DIAGRAM** 

**==> picture [82 x 93] intentionally omitted <==**

- I HIGH CURRENT, HIGH SPEED SWITCHING 

## **ORDERING INFORMATION** 

|**SALES TYPE**|**MARKING**|**PACKAGE**|**PACKAGING**|
|---|---|---|---|
|STP12NK30Z|P12NK30Z|TO-220|TUBE|



December 2002 

1/8 

**STP12NK30Z** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source Voltage (VGS= 0)|300|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|300|V|
|VGS|Gate- source Voltage|± 30|V|
|ID|Drain Current (continuous) at TC= 25°C<br>Drain Current (continuous) at TC= 100°C|9<br>5.6|A<br>A|
|IDM(1)|Drain Current (pulsed)|36|A|
|PTOT|Total Dissipation at TC= 25°C|90|W|
||Derating Factor|0.72|W/°C|
|VESD(G-S)|Gate source ESD(HBM-C=100pF, R=1.5KΩ)|3000|V/ns|
|dv/dt (2)|Peak Diode Recovery voltage slope|4.5|V/ns|
|Tstg|Storage Temperature|–55 to 150|°C|
|Tj|Max. Operating Junction Temperature|||



## **THERMAL DATA** 

|Rthj-case|Thermal Resistance Junction-case<br>Max|1.38|°C/W|
|---|---|---|---|
|Rthj-amb<br>Tl|Thermal Resistance Junction-ambient<br>Max<br>Maximum Lead Temperature For Soldering Purpose|62.5<br>300|°C/W<br>°C|



Note: 1. Pulse width limited by safe operating area 2. ISD< 9A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX 

## **AVALANCHE CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Parameter**|**Max Value**|**Max Value**|**Max Value**|**Unit**|
|---|---|---|---|---|---|---|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)||9|||A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)||155|||mJ|
|**GATE-SOURCE ZENER DIODE**|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-Source Breakdown<br>Voltage|Igs=± 1mA (Open Drain)|30|||V|



## **PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES** 

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

2/8 

**STP12NK30Z** 

**ELECTRICAL CHARACTERISTICS** (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF 

|<br>ON/OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID = 1 mA, VGS= 0|300|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ± 20V|||±10|µA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 50µA|3|3.75|4.5|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 4.5 A||0.36|0.4|Ω|
|DYNAMIC|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(1)|Forward Transconductance|VDS= 10 V,ID= 4.5 A||5.4||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||670<br>125<br>28||pF<br>pF<br>pF|
|Coss eq.(3)|Equivalent Output<br>Capacitance|VGS= 0V, VDS= 0V to 440 V||70||pF|
|RG|Gate Input Resistance|f=1 MHz Gate DC Bias = 0<br>Test Signal Level = 20mV<br>Open Drain||3.6||Ω|
|SWITCHING|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on Delay Time<br>Rise time<br>Turn-off Delay Time<br>Fall Time|VDD= 150 V, ID= 4.5 A<br>RG= 4.7ΩVGS= 10 V<br>(Resistive Load see, Figure 3)||16<br>20<br>36<br>10||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD= 240V, ID= 9 A,<br>VGS= 10V||25<br>5.5<br>13.4|35|nC<br>nC<br>nC|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||||9<br>36|A<br>A|
|VSD(1)|Forward On Voltage|ISD= 9 A, VGS= 0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD= 9 A, di/dt = 100A/µs<br>VDD= 40V, Tj = 150°C<br>(see test circuit, Figure 5)||165<br>0.9<br>11.2||ns<br>µC<br>A|



- Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

   2. Pulse width limited by safe operating area. 

   3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**STP12NK30Z** 

## **Safe Operating Area For TO-220** 

## **Output Characteristics** 

**Transconductance** 

**==> picture [196 x 196] intentionally omitted <==**

## **Thermal Impedance For TO-220** 

**Transfer Characteristics** 

## **Static Drain-source On Resistance** 

**==> picture [206 x 223] intentionally omitted <==**

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**STP12NK30Z** 

## **Gate Charge vs Gate-source Voltage** 

**Normalized Gate Thereshold Voltage vs Temp.** 

**Source-drain Diode Forward Characteristics** 

**==> picture [210 x 226] intentionally omitted <==**

## **Capacitance Variations** 

**Normalized On Resistance vs Temperature** 

## **Normalized BVDSS vs Temperature** 

**==> picture [196 x 196] intentionally omitted <==**

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**STP12NK30Z** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 3:** Switching Times Test Circuit For Resistive Load 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 2:** Unclamped Inductive Waveform 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 4:** Gate Charge test Circuit 

**==> picture [220 x 175] intentionally omitted <==**

**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

**==> picture [220 x 174] intentionally omitted <==**

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**STP12NK30Z** 

|||||||||||||||||**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.051<br>0.107<br>0.050<br>0.027<br>0.034<br>0.067<br>0.067<br>0.203<br>0.106<br>0.409<br>0.645<br>0.551<br>0.116<br>0.620<br>0.260<br>0.154<br>0.151<br>E<br>F<br>G<br>H2<br>G1<br>P011C|**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.051<br>0.107<br>0.050<br>0.027<br>0.034<br>0.067<br>0.067<br>0.203<br>0.106<br>0.409<br>0.645<br>0.551<br>0.116<br>0.620<br>0.260<br>0.154<br>0.151<br>E<br>F<br>G<br>H2<br>G1<br>P011C|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**TO-220 MECHANICAL DATA**|||||||||||||
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||**DIM.**|||||**mm**||||||||||**inch**||
|||**MIN.**||||**TYP.**|||**MAX.**||||**MIN.**|||**TYP.**|**MAX.**|
||A|4.40|||||||4.60||||0.173||||0.181|
||C|1.23|||||||1.32||||0.048||||0.051|
||D|2.40|||||||2.72||||0.094||||0.107|
||D1|||||1.27||||||||||0.050||
||E|0.49|||||||0.70||||0.019||||0.027|
||F|0.61|||||||0.88||||0.024||||0.034|
||F1|1.14|||||||1.70||||0.044||||0.067|
||F2|1.14|||||||1.70||||0.044||||0.067|
||G|4.95|||||||5.15||||0.194||||0.203|
||G1|2.4|||||||2.7||||0.094||||0.106|
||H2|10.0|||||||10.40||||0.393||||0.409|
||L2|||||16.4||||||||||0.645||
||L4|13.0|||||||14.0||||0.511||||0.551|
||L5|2.65|||||||2.95||||0.104||||0.116|
||L6|15.25|||||||15.75||||0.600||||0.620|
||L7|6.2|||||||6.6||||0.244||||0.260|
||L9|3.5|||||||3.93||||0.137||||0.154|
||DIA.|3.75|||||||3.85||||0.147||||0.151|
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|||A<br>C||||||||||||||E<br>F<br>G<br>H2<br>G1<br>P011C||
||||C|||||||||||||||
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||||||L5|D1|||L2|||||||||
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|||||||||||||||||F<br>G<br>H2<br>G1||
|||||||||||||||||||
|||||||||||||||||G<br>G1||
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|||||||||||||||||F||
||||||||||||L9||L4<br>F2|||||
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**STP12NK30Z** 

**Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.** 

**© The ST logo is a registered trademark of STMicroelectronics** 

**© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved** 

**STMicroelectronics GROUP OF COMPANIES** 

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**© http://www.st.com** 

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---

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