# Power MOSFET, N Channel, 700 V, 8.6 A, 0.85 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1291979/)

**URL**: https://novapart.co/products/STP10NK70Z/power-mosfet-n-channel-700-v-86-a-085-ohm-to-220
**SKU**: STP10NK70Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4100
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipati

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 700V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.6A |
| Drain Source On State Resistance | 0.85ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1291979/)

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## **STP10NK70ZFP STP10NK70Z** N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP Zener-Protected SuperMESH™ MOSFET 

## **General features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STP10NK70Z<br>STP10NK70ZFP|700 V<br>700 V|<0.85Ω<br><0.85Ω|8.6 A<br>8.6 A|110 W<br>35 W|



- I EXTREMELY HIGH dv/dt CAPABILITY 

- I IMPROVED ESD CAPABILITY 

- I 100% AVALANCHE TESTED 

## **Package** 

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**----- Start of picture text -----**<br>
3 3<br>2 2<br>1 1<br>TO-220 TO-220FP<br>**----- End of picture text -----**<br>


- I GATE CHARGE MINIMIZED 

- I VERY LOW INTRINSIC CAPACITANCES 

- I VERY GOOD MANUFACTURING REPEABILITY 

## **Description** 

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 

## **Applications** 

## **Internal schematic diagram** 

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- I HIGH CURRENT, HIGH SPEED SWITCHING 

- I IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC 

## **Order codes** 

|**Sales Type**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP10NK70Z|P10NK70Z|TO-220|TUBE|
|STP10NK70ZFP|P10NK70ZFP|TO-220FP|TUBE|



Rev 2 1/13 

August 2005 

_www.st.com_ 

**STP10NK70Z - STP10NK70ZFP** 

1 Electrical ratings 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**TO-220**||**TO-220FP**||
|VDS|Drain-Source Voltage (VGS= 0)|700|||V|
|VDGR|Drain-gate Voltage (RGS= 20kΩ)|700|||V|
|VGS|Gate-Source Voltage|± 30|||V|
|ID|Drain Current (continuous) at TC= 25°C|8.6||8.6 (_Note_3)|A|
|ID|Drain Current (continuous) at TC= 100°C|5.4||5.4 (_Note_3)|A|
|IDM_Note_ 2|Drain Current (pulsed)|34||34 (_Note_3)|A|
|PTOT|Total Dissipation at TC= 25°C|150||35|W|
||Derating Factor|1.20||0.28|W/°C|
|Vesd(G-S)|G-S ESD (HBM C=100pF, R=1.5kΩ)|4000|||V|
|dv/dt<br> _Note_1|Peak Diode Recovery voltage slope|4.5|||V/ns|
|VISO|Insulation Withstand Volatge (DC)|--||2500|V|
|Tj<br>Tstg|Operating Junction Temperature<br>Storage Temperature|-55 to 150|||°C|
|**Table 2.**<br>**Thermal data**||||||
|||**TO-220**|**TO-220FP**||**Unit**|
|Rthj-case|Thermal Resistance Junction-case Max|0.83|3.6||°C/W|
|Rthj-amb|Thermal Resistance Junction-amb Max|62.5|||°C/W|
|Tl|Maximum Lead Temperature For Soldering<br>Purpose|300|||°C|
|**Table 3.**<br>**Avalanche characteristics**||||||
|**Symbol**|**Parameter**|**Max Value**|||**Unit**|
|IAR|Avalanche Current, repetitive or<br>Not-Repetitive (pulse width limited by Tj max)|8.6|||A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj=25°C, ID=IAR, VDD= 50V)|350|||mJ|



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2 Electrical characteristics 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-Source Breakdown<br>Voltage|ID= 1mA, VGS= 0|700|||V|
|IDSS|Zero Gate Voltage Drain<br>Current (VGS= 0)|VDS= Max Rating,<br>VDS= Max Rating,Tc = 125°C|||1<br>50|µA<br>µA|
|IGSS|Gate Body Leakage Current<br>(VDS= 0)|VGS= ±20V, VDS= 0|||±10|µA|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static Drain-Source On<br>Resistance|VGS= 10 V, ID= 4.5 A||0.75|0.85|Ω|



## **Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs_Note_4|Forward Transconductance|VDS=15V, ID= 4.5A||7.7||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer Capacitance|VDS=25V, f=1 MHz, VGS=0||2000<br>190<br>41||pF<br>pF<br>pF|
|Coss eq.<br>_Note_5|Equivalent Ouput Capacitance|VGS=0, VDS=0V to 560V||98||pF|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>Gate-Source Charge<br>Gate-Drain Charge|VDD=560V, ID= 9 A<br>VGS=10V<br>(see Figure 17)||64<br>12<br>33|90|nC<br>nC<br>nC|



## **Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>Rise Time|VDD=350 V, ID=4.5 A,<br>RG=4.7Ω,VGS=10V<br>(see Figure 18)||22<br>19||ns<br>ns|
|td(off)<br>tf|Turn-off Delay Time<br>Fall Time|VDD=350 V, ID=4.5A,<br>RG=4.7Ω,VGS=10V<br>(see Figure 18)||46<br>19||ns<br>ns|
|tr(Voff)<br>tf<br>tc|Off-voltage Rise Time<br>Fall Time<br>Cross-over Time|VDD=560 V, ID=9A,<br>RG=4.7Ω,VGS=10V<br>(see Figure 18)||11<br>10<br>22||ns<br>ns<br>ns|



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**STP10NK70Z - STP10NK70ZFP** 

2 Electrical characteristics 

## **Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM_Note_ 2|Source-drain Current<br>Source-drain Current (pulsed)||||8.6<br>34|A<br>A|
|VSD_Note_4|Forward on Voltage|ISD=8.6 A, VGS=0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current|ISD=9A, di/dt = 100A/µs,<br>VDD=35 V, Tj=150°C||720<br>5.4<br>15||ns<br>µC<br>A|



## **Table 8. Gate-source zener diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVGSO<br>_Note_6|Gate-Source<br>Breakdown Voltage|Igs=±1mA<br>(Open Drain)|30|||V|



(1) ISD ≤8.6 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 

- (2) Pulse width limited by safe operating area 

- (3) Limited only by maximum temperature allowed 

- (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% 

- (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%VDSS 

- (6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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2 Electrical characteristics 

## **2.1 Electrical Characteristics (curves)** 

**Figure 1. Safe Operating Area for TO-220** 

**Figure 2. Thermal Impedanc for TO-220** 

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**Figure 3. Safe Operating Area for TO-220FP** 

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**Thermal Impedance for TO-220FP** 

**Figure 4.** 

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**Figure 5. Output Characteristics** 

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**Figure 6. Transfer Characteristics** 

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**STP10NK70Z - STP10NK70ZFP** 

2 Electrical characteristics 

## **Figure 7. Transconductance** 

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**Figure 9. Gate Charge vs Gate -Source Voltage** 

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**Figure 10. Normalized Gate Threshold Voltage vs Temperatute** 

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## **Figure 8. Static Drain-Source on Resistance** 

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**Figure 11. Capacitance Variations** 

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**Figure 12. Normalized on Resistance vs Temperature** 

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**STP10NK70Z - STP10NK70ZFP** 

2 Electrical characteristics 

**Figure 13. Source-drain Diode Forward Characteristics** 

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**Figure 14. Normalized BVDSS vs Temperature** 

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## **Figure 15. Maximum Avalanche Energy vs Temperature** 

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**STP10NK70Z - STP10NK70ZFP** 

3 Test circuits 

## **3 Test circuits** 

## **Figure 16. Switching Times Test Circuit For Resistive Load** 

**==> picture [213 x 88] intentionally omitted <==**

**Figure 18. Test Circuit For Indictive Load Switching and Diode Recovery Times** 

**==> picture [181 x 143] intentionally omitted <==**

**Figure 17. Gate Charge Test Circuit** 

**==> picture [182 x 144] intentionally omitted <==**

**Figure 20. Unclamped Inductive Load Test Circuit** 

**==> picture [164 x 109] intentionally omitted <==**

**Figure 19. Unclamped Inductive Waveform** 

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**STP10NK70Z - STP10NK70ZFP** 

4 Package mechanical data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

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4 Package mechanical data 

## **TO-220 MECHANICAL DATA** 

|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|**TO-220 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|b|0.61||0.88|0.024||0.034|
|b1|1.15||1.70|0.045||0.066|
|c|0.49||0.70|0.019||0.027|
|D|15.25||15.75|0.60||0.620|
|E|10||10.40|0.393||0.409|
|e|2.40||2.70|0.094||0.106|
|e1|4.95||5.15|0.194||0.202|
|F|1.23||1.32|0.048||0.052|
|H1|6.20||6.60|0.244||0.256|
|J1|2.40||2.72|0.094||0.107|
|L|13||14|0.511||0.551|
|L1|3.50||3.93|0.137||0.154|
|L20||16.40|||0.645||
|L30||28.90|||1.137||
|øP|3.75||3.85|0.147||0.151|
|Q|2.65||2.95|0.104||0.116|
||||||||



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4 Package mechanical data 

**==> picture [380 x 507] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.4 4.6 0.173 0.181<br>B 2.5 2.7 0.098 0.106<br>D 2.5 2.75 0.098 0.108<br>E 0.45 0.7 0.017 0.027<br>F 0.75 1 0.030 0.039<br>F1 1.15 1.7 0.045 0.067<br>F2 1.15 1.7 0.045 0.067<br>G 4.95 5.2 0.195 0.204<br>G1 2.4 2.7 0.094 0.106<br>H 10 10.4 0.393 0.409<br>L2 16 0.630<br>L3 28.6 30.6 1.126 1.204<br>L4 9.8 10.6 .0385 0.417<br>L5 2.9 3.6 0.114 0.141<br>L6 15.9 16.4 0.626 0.645<br>L7 9 9.3 0.354 0.366<br>Ø 3 3.2 0.118 0.126<br>L3<br>L6<br>L7<br>1 2 3<br>L5<br>L2 L4<br>F1<br>F<br>G<br>F2<br>E<br>A<br>D<br>B<br>G1<br>H<br>**----- End of picture text -----**<br>


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5 Revision History 

## **5 Revision History** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Aug-2005|2|Inserted Ecopack indication|



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**STP10NK70Z - STP10NK70ZFP** 

5 Revision History 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 

© 2005 STMicroelectronics - All rights reserved 

STMicroelectronics group of companies 

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**www.st.com** 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stp10nk70z/mosfet-n-to-220/dp/1291979)
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