# Bipolar (BJT) Single Transistor, PNP, 600 V, 500 mA, 1.6 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:4319999/)

**URL**: https://novapart.co/products/STN9360/bipolar-bjt-single-transistor-pnp-600-v-500-ma-16
**SKU**: STN9360
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2080
**Stock**: 10+
**Lead Time**: 113 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 120hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4319999/)

**STN9360** 

**==> picture [61 x 39] intentionally omitted <==**

## High voltage fast-switching PNP power transistor 

## **Datasheet — production data** 

## **Features** 

- High voltage capability 

- Fast switching speed 

## **Applications** 

- Lighting 

- Switch mode power supply 

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4<br>3<br>2<br>1<br>SOT-223<br>**----- End of picture text -----**<br>


## **Description** 

This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 

I 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Part number**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN9360|N9360|SOT-223|Tape and reel|



_www.st.com_ 

December 2012 

Doc ID 023213 Rev 2 

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This is information on a product in full production. 

**STN9360** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VBE= 0)|-600|V|
|VCEO|Collector-emitter voltage (IB= 0)|-600|V|
|VEBO|Emitter-base voltage (IC= 0)|-7|V|
|IC|Collector current|-0.5|A|
|ICM|Collector peak current (tP< 5 ms)|-1|A|
|IB|Base current|-0.25|A|
|IBM|Base peak current (tP< 5 ms)|-0.5|A|
|PTOT|Total dissipation at Ta= 25 °C|1.6|W|
|TSTG|Storage temperature|-65 to 150|°C|
|TJ|Max. operating junction temperature|150|°C|



## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJA|Thermal resistance junction-ambient(1)max|78|°C/W|



1. Device mounted on PCB area of 1 cm² . 

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**STN9360** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

Tcase = 25 °C unless otherwise specified. 

## **Table 4. Electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector cut-off current<br>(VBE= 0)|VCE= -600 V|||-10|μA|
|IEBO|Emitter cut-off current<br>(IC= 0)|VEB= -7 V|||-1|μA|
|VCE(sus)<br>(1)|Collector-emitter<br>sustaining voltage<br>(IB= 0)|IC= -10 mA|-600|||V|
|VCE(sat)<br>(1)|Collector-emitter<br>saturation voltage|IC= -100 mA               IB= -10 mA|||-0.5|V|
|VBE(sat)<br>(1)|Base-emitter saturation<br>voltage|IC= -100 mA               IB= -10 mA|||-1|V|
|hFE|DC current gain|IC= -1 mA                     VCE= -5 V<br>IC= -10 mA                  VCE= -5 V<br>IC= -20 mA                  VCE= -5 V|170<br>120|200|||
|tr<br>ts<br>tf|Resistive load<br>Rise time<br>Storage time<br>Fall time|VCC=-200 V, IC=-0.1 A<br>IB1=-10 mA, IB2=20 mA<br>Tp=30 μs||45<br>3.15<br>160||ns<br>μs<br>ns|



1. Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2 %. 

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**STN9360** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Derating curve** 

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**----- Start of picture text -----**<br>
Figure 4. Output curves up to VCE= 0.5 V Figure 5. Output curves up to VCE= 5 V<br>AM16312v1 AM16313v1<br>0.5 ee 0.5 ae<br>0.4 0.4<br>—|f/| | [ | 1} SS——<br>eee a=<br>0.3 ge 0.3<br>IC 2) | IC<br>(A) Zee (A) | ——<br>0.2 0.2<br> O{— |=<br>Ib=10mA Steps.<br>) 7S eee Ib=10mA Steps. |;<br>0.1 > 0.1 |<br>» A an 2<br>0 ALT 0 PrP rr [rrr] rr<br>0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5<br>VCE(V) VCE(V)<br>**----- End of picture text -----**<br>


**Figure 6. DC current gain (VCE = 1 V)** 

**Figure 7. DC current gain (VCE = 5 V)** 

**==> picture [452 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16314v1 AM16315v1<br>1000 1000<br>TJ= -55°C<br>PS SEER TJ= 25°C SF<br>Za TJ=100°C SSSeee<br>100 100<br>Pot TT TTA TTT a OO<br>PN Lf PPP Py AAC<br>10 N S 10 TJ= -55°C YN<br>TJ= 25°C<br>a<br>_ TJ=100°C<br>1 A 1 mit a<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>IC(A) IC(A)<br>hfe hfe<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 8. Collector-emitter saturation voltage Figure 9. Base-emitter saturation voltage** 

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**----- Start of picture text -----**<br>
AM16316v1 AM16317v1<br>1<br>1 ——|ee 0.9 eal a —<br>a a eeOO ee 0.8 | |etL e eeer ||allleel—_SJ<br>hfe=5 0.7<br>TOF | 0.6 eeSE<br>0.1 TE F 0.5 PFUTTT<br>—— eeewee | eo<br>2 eee |<br>_— a 0.4<br>hfe=5<br>Saat re es ee TJ= -55°C [| | 0.3 Cr TJ= -55°C<br>a TJ= 25°C C)) 0.2 CO oir TJ= 25°C il<br>TJ=100°C 0.1 TJ=100°C<br>0.01 0<br>0.01 0.1 1 0.01 0.1 1<br>IC(A) IC(A)<br>(V) (V)<br>CE(sat) BE(sat)<br>V V<br>**----- End of picture text -----**<br>


**Figure 10. Base-emitter on voltage** 

## **Figure 11. Capacitance variation** 

**==> picture [444 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16318v1<br>0.91 a a a [AllL | 0 = RS SS A as 0———— 0<br>i Ch ee. = a 8a<br>0.8<br>0.7<br>eT ee)LLP | 100 cof VS COI CTITT<br>0.6 | OO ESS ae<br>0.5 mal | [Lat] = a ee a<br>VCE=5V<br>STI TT Pe RES<br>0.40.3 I TJ= -55°C TT icf3 eTcoo PML LL Il<br>a i] je EESSSEESEaaahSee<br>0.2 TJ= 25°C Lt TT tT<br>SAcciticthe. TT<br>0.1 TJ=100°C<br>0 a we |  COE<br>0.0001 0.001 0.01 0.1 lll 1 | | i HL<br>IC(A) VR, reverse voltage [ V]<br>(V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


## **Figure 12. Reverse biased safe operating area** 

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**----- Start of picture text -----**<br>
0.6<br>0.5<br>0.4<br>hfe = 2<br>Vbeoff = -5V<br>0.3 Rbb = 0 Ω<br>L=1mH<br>Tj ≤ 125 °C<br>0.2<br>0.1<br>0<br>0 100 200 300 400 500 600 700 800<br>Vce [V]<br>AM10060v1<br>Ic [A]<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **2.2 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 13. Resistive load switching test circuit<br>**----- End of picture text -----**<br>


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1. Fast electronic switching 

2. Non-inductive resistor 

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**STN9360** 

**Package mechanical data** 

## **3 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STN9360** 

**Package mechanical data** 

**Table 5. SOT-223 mechanical data** 

|**Dim.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|||1.80|
|A1|0.02||0.1|
|B|0.60|0.70|0.85|
|B1|2.90|3.00|3.15|
|c|0.24|0.26|0.35|
|D|6.30|6.50|6.70|
|e||2.30||
|e1||4.60||
|E|3.30|3.50|3.70|
|H|6.70|7.00|7.30|
|V|||10°|



## **Figure 14. SOT-223 mechanical data drawing** 

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0046067_M<br>**----- End of picture text -----**<br>


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**Revision history** 

## **4 Revision history** 

**Table 6. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|21-May-2012|1|Initial release.|
|06-Dec-2012|2|Document status promoted from preliminary data to datasheet.|



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