# Bipolar (BJT) Single Transistor, PNP, 600 V, 500 mA, 1.6 W, SOT-223, Surface Mount
**URL**: https://novapart.co/products/STN9260/bipolar-bjt-single-transistor-pnp-600-v-500-ma-16
**SKU**: STN9260
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.5210
**Stock**: 1000+
**Lead Time**: 162 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-600V; Transition Frequency ft:-; Power Dissipation Pd:1.6W; DC Collector Current:-; Available until stocks are exhausted
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.6W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 600V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2770319/)
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## **STN9260** High voltage fast-switching PNP power transistor
## **Features**
- High voltage capability
- Fast switching speed
## **Applications**
- Lighting
- Switch mode power supply
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4
3
2
1
SOT-223
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## **Description**
This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
I
## **Figure 1. Internal schematic diagram**
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**Table 1. Device summary**
|**Part number**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN9260|N9260|SOT-223|Tape and reel|
_www.st.com_
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Doc ID 18326 Rev 2
**STN9260**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2. Absolute maximum ratings**
|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VBE= 0)|-600|V|
|VCEO|Collector-emitter voltage (IB= 0)|-600|V|
|VEBO|Emitter-base voltage (IC= 0)|-7|V|
|IC|Collector current|-0.5|A|
|ICM|Collector peak current (tP< 5 ms)|-1|A|
|IB|Base current|-0.25|A|
|IBM|Base peak current (tP< 5 ms)|-0.5|A|
|PTOT|Total dissipation at Ta= 25 °C|1.6|W|
|TSTG|Storage temperature|-65 to 150|°C|
|TJ|Max. operating junction temperature|150|°C|
## **Table 3. Thermal data**
|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJA|Thermal resistance junction-ambient(1) _max|78|°C/W|
1. Device mounted on PCB area of 1 cm².
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**STN9260**
**Electrical characteristics**
## **2 Electrical characteristics**
Tcase = 25 °C unless otherwise specified.
## **Table 4. Electrical characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector cut-off current
(VBE= 0)|VCE= -600 V|||-10|µA|
|IEBO|Emitter cut-off current
(IC= 0)|VEB= -7 V|||-1|µA|
|VCE(sus)
(1)|Collector-emitter
sustaining voltage
(IB= 0)|IC= -10 mA|-600|||V|
|VCE(sat)
(1)|Collector-emitter
saturation voltage|IC= -100 mA IB= -10 mA|||-1|V|
|VBE(sat)
(1)|Base-emitter saturation
voltage|IC= -100 mA IB= -10 mA|||-1|V|
|hFE|DC current gain|IC= -10 mA VCE= -5 V
IC= -20 mA VCE= -5 V|50|140|||
|tr
ts
tf|Resistive load
Rise time
Storage time
Fall time|VCC=-200 V, IC=-0.1 A
IB1=-10 mA, IB2=20 mA
Tp=30 µs||200
3.2
150||ns
µs
ns|
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2. Safe operating area**
**Figure 3. Derating curve**
## **Figure 4. Output curves up to VCE= -1 V**
**Figure 5. Output curves up to VCE= -2 V**
**Figure 6. DC current gain (VCE = -1 V)**
**Figure 7. DC current gain (VCE = -5 V)**
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**STN9260**
**Electrical characteristics**
## **Figure 8. Collector-emitter saturation voltage Figure 9.**
## **Base-emitter saturation voltage**
## **Figure 10. Base-emitter on voltage**
## **Figure 11. Capacitance variation**
## **Figure 12. Reverse biased safe operating area**
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0.6
0.5
0.4
hfe = 2
Vbeoff = -5V
0.3 Rbb = 0 Ω
L=1mH
Tj ≤ 125 °C
0.2
0.1
0
0 100 200 300 400 500 600 700 800
Vce [V]
AM10060v1
Ic [A]
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**Electrical characteristics**
## **2.2 Test circuits**
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Figure 13. Resistive load switching test circuit
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1. Fast electronic switching
2. Non-inductive resistor
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**Package mechanical data**
## **3 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark.
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|**Dim.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|**mm**
**Min.**
**Typ.**
**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|||1.80|
|A1|0.02||0.1|
|B|0.60|0.70|0.85|
|B1|2.90|3.00|3.15|
|c|0.24|0.26|0.35|
|D|6.30|6.50|6.70|
|e||2.30||
|e1||4.60||
|E|3.30|3.50|3.70|
|H|6.70|7.00|7.30|
|V|||10°|
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0046067_M
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**STN9260**
**Revision history**
## **4 Revision history**
**Table 6. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|13-Dec-2010|1|Initial release.|
|03-Aug-2011|2|– Curves inserted
– Minor text changes|
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## Links
- [View this product on Novapart](https://novapart.co/products/STN9260/bipolar-bjt-single-transistor-pnp-600-v-500-ma-16)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stn9260/transistor-pnp-600v-0-5a-sot-223/dp/2770319)
---
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