# Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount
**URL**: https://novapart.co/products/STN4NF06L/power-mosfet-n-channel-60-v-4-a-007-ohm-sot-223
**SKU**: STN4NF06L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2500
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II |
| Qualification | - |
| Power Dissipation | 3.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 2.8V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2849658/)
**==> picture [61 x 39] intentionally omitted <==**
## **STN4NF06L** N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET™ II Power MOSFET
## **Features**
|**Order code**|**VDSS**|**RDS(on)**max|**ID**|
|---|---|---|---|
|STN4NF06L|60 V|< 0.1Ω|4 A|
- Exceptional dv/dt capability
- Avalanche rugged technology
- 100% avalanche tested
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2
3
2
1
SOT-223
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- Low threshold drive
## **Applications**
- Switching application
- Automotive
## **Description**
This device is a N-channel STripFET™ II Power MOSFET that is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
## **Figure 1. Internal schematic diagram**
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**Table 1. Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN4NF06L|4NF06L|SOT-223|Tape and reel|
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Doc ID 14639 Rev 2
_www.st.com_
**Contents**
**STN4NF06L**
|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
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**STN4NF06L**
**Electrical ratings**
## **1 Electrical ratings**
## **Table 2. Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|60|V|
|VGS|Gate-source voltage|± 16|V|
|ID
(1)|Drain current (continuous) at TC= 25 °C|4|A|
|ID|Drain current (continuous) at TC=100 °C|2.9|A|
|IDM
(2)|Drain current (pulsed)|16|A|
|PTOT|Total dissipation at TC= 25 °C|3.3|W|
||Derating factor|0.026|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|10|V/ns|
|EAS (4)|Single pulse avalanche energy|200|mJ|
|TJ
Tstg|Operating junction temperature
Storage temperature|-55 to 150|°C|
1. Current limited by the package.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3 A, di/dt ≤ 150 A /µ s , VDD ≤ V(BR)DSS, TJ ≤ TJMAX.
4. Starting TJ = 25 °C, ID = 4 A, VDD = 30 V.
## **Table 3. Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb(1)|Thermal resistance junction-PCB max.|38|°C/W|
|Rthj-pcb(2)|Thermal resistance junction-PCB max.|100|°C/W|
|Tl
(3)|Maximum lead temperature for soldering
purpose typ.|260|°C|
1. When Mounted on FR-4 board with 1 inch[2 ] pad, 2 oz. of Cu. and t **<** 10 sec.
2. When mounted on minimum recommended footprint.
3. For 10 sec. 1.6 mm from case.
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**STN4NF06L**
**Electrical characteristics**
## **2 Electrical characteristics**
(TCASE = 25 °C unless otherwise specified)
## **Table 4. On/off states**
|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown
voltage|ID= 250 µA, VGS= 0|60|||V|
|IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= Max rating,
VDS= Max rating @125 °C|||1
10|µA
µA|
|IGSS|Gate body leakage current
(VDS= 0)|VGS= ±16 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1||2.8|V|
|RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 1.5 A
VGS= 5 V, ID= 1.5 A||0.07
0.085|0.10
0.12|Ω
Ω|
## **Table 5. Dynamic**
|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs
(1)|Forward transconductance|VDS= 15 V, ID=1.5 A|-|3||S|
|Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer
capacitance|VDS= 25 V, f=1 MHz, VGS= 0|-|340
63
30||pF
pF
pF|
|Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 48 V, ID= 3 A
VGS= 5 V
_(see Figure 15)_|-|7
1.5
2.8|9|nC
nC
nC|
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
**Table 6. Switching times**
|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)
tr|Turn-on delay time
rise time|VDD= 30 V, ID= 1.5 A,
RG= 4.7Ω,VGS= 5 V
_(see Figure 14)_|-|9
25|-|ns
ns|
|td(off)
tf|Turn-off delay time
fall time|VDD= 30 V, ID= 1.5 A,
RG= 4.7Ω,VGS= 5 V
_(see Figure 14)_|-|20
10|-|ns
ns|
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**STN4NF06L**
**Electrical characteristics**
## **Table 7. Source drain diode**
|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|ISD
ISDM
(1)|Source-drain current
Source-drain current (pulsed)||-||4
16|A
A|
|VSD
(2)|Forward on voltage|ISD= 4 A, VGS=0|-||1.5|V|
|trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 4 A,
di/dt = 100 A/µs,
VDD= 25 V, Tj= 150 °C
_(see Figure 16)_|-|50
88
3.5||ns
nC
A|
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
5/12
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**STN4NF06L**
**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
## **Figure 2. Safe operating area**
**==> picture [155 x 151] intentionally omitted <==**
**Figure 3. Thermal impedance**
**==> picture [150 x 149] intentionally omitted <==**
## **Figure 4. Output characteristics**
**==> picture [155 x 149] intentionally omitted <==**
## **Figure 5. Transfer characteristics**
**==> picture [204 x 153] intentionally omitted <==**
**----- Start of picture text -----**
ID AM09065v1
(A)
30
VDS=8V
25
20
15
10
5
0
0 2 4 6 8 VGS(V)
**----- End of picture text -----**
## **Figure 6. Transconductance**
**==> picture [161 x 152] intentionally omitted <==**
## **Figure 7. Static drain-source on resistance**
**==> picture [206 x 155] intentionally omitted <==**
**----- Start of picture text -----**
RDS(on) AM09066v1
(mΩ)
95
90 VGS=10V
85
80
75
70
65
60
55
50
0 1 2 3 4 5 ID(A)
**----- End of picture text -----**
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**STN4NF06L**
**Electrical characteristics**
**Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations** ~~7]~~ **Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs. vs. temperature temperature** VGS=10V PO ID=1.5A See POEL ene JCOEEE eo ~~enacts~~ JPCCECO **L** LoaA COLL Ss[-4neeeeee] eCLCCECCCCO -50 0 50 100 Tu(*C) ~~lke |~~ **Figure 12. Source-drain diode forward Figure 13. Normalized** b **reakdown voltage vs. characteristics temperature**
**==> picture [176 x 153] intentionally omitted <==**
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VSD AM09067v1
(V)
TJ=-40°C
1.0
pf tf
past te
0.8
TJ=25°C
0.6 e e
TJ=150°C
0.4 P F|
P f
0.2
0 | | | ft| f t f
0 2 4 6 8 ISD(A)
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**STN4NF06L**
**Test circuit**
## **3 Test circuit**
**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load**
**==> picture [462 x 162] intentionally omitted <==**
**----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
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**Figure 16. Test circuit for inductive load switching and diode recovery times**
**Figure 17. Unclamped Inductive load test circuit**
**==> picture [462 x 162] intentionally omitted <==**
**----- Start of picture text -----**
L
A A A
D
G D.U.T. FASTDIODE L=100μH VD 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
**----- End of picture text -----**
## **Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform**
**==> picture [462 x 162] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
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**STN4NF06L**
**Package mechanical data**
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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**Package mechanical data**
**Table 8. SOT-223 mechanical data**
|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|a|2.27|2.3|2.33|
|b|4.57|4.6|4.63|
|c|0.2|0.4|0.6|
|d|0.63|0.65|0.67|
|e1|1.5|1.6|1.7|
|e4|||0.32|
|f|2.9|3|3.1|
|g|0.67|0.7|0.73|
|l1|6.7|7|7.3|
|l2|3.5|3.5|3.7|
|L|6.3|6.5|6.7|
## **Figure 20. SOT-223 mechanical data drawing**
**==> picture [405 x 273] intentionally omitted <==**
**----- Start of picture text -----**
L l2
a d
c e4
b
f
C
B C E
g
P008B
e1
l1
**----- End of picture text -----**
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**STN4NF06L**
**Revision history**
## **5 Revision history**
**Table 9. Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Apr-2008|1|Initial version.|
|29-Apr-2011|2|_Figure 5_,_Figure 7_,_Figure 11_and_Figure 12_have been updated.|
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**STN4NF06L**
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12/12
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## Links
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stn4nf06l/mosfet-n-ch-60v-4a-sot-223/dp/2849658)
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