# Power MOSFET, P Channel, 60 V, 3 A, 0.13 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2629749/)

**URL**: https://novapart.co/products/STN3P6F6/power-mosfet-p-channel-60-v-3-a-013-ohm-sot-223
**SKU**: STN3P6F6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3050
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | DeepGATE STripFET VI |
| Qualification | - |
| Power Dissipation | 2.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629749/)

## **STN3P6F6** 

P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package 

Datasheet - production data 

## **Features** 

|**Features**|**Features**|**Features**|||
|---|---|---|---|---|
|**Order code**<br>**VDS**<br>STN3P6F6<br>-60 V<br>~~—~~|||**RDS(on) max.**<br>0.16 Ω|**ID**<br>-3 A|
|||Very low on-resistance|||
|||Very low gate charge|||
|||High avalanche ruggedness|||



- Low gate drive power loss 

## **Applications** 

**Figure 1: Internal schematic diagram** 

- Switching applications 

**==> picture [159 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2, 4)<br>G(1)<br>S(3)<br>Int_schem_P_ch_nTnZ_SOT_223<br>**----- End of picture text -----**<br>


## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STN3P6F6|3P6F6|SOT-223|Tape and reel|



This is information on a product in full production. 

_www.st.com_ 

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|**Contents**<br>**STN3P6F6**|**Contents**<br>**STN3P6F6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
|**5**|**Revision history ............................................................................ 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|-60|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at Tpcb= 25 °C|-3|A|
|ID|Drain current (continuous) at Tpcb= 100 °C|-2|A|
|IDM|Drain current (pulsed)|-12|A|
|PTOT_(1)_|Total dissipation at Tpcb= 25 °C|2.6|W|
|Tj|Operating junction temperature range|- 55 to 175|°C|
|Tstg|Storage temperature range||°C|



## **Notes:** 

- (1)Pulse width is limited by safe operating area 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|57|°C/W|



## **Notes:** 

(1)When mounted on FR-4 board of 1 inch², 2 Oz Cu, t<10 s 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC= 25 °C unless otherwise specified) 

**Table 4: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage(VGS= 0)|ID= -250 µA|-60|||V|
|IDSS|Zero gate voltage Drain current<br>(VGS= 0)|VDS= -60 V|||-1|µA|
|||VDS= -60 V, TC= 125 °C_(1)_|||-10|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= -250µA|-2||-4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= -10 V, ID= -1.5 A||0.13|0.16|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= -48 V, f = 1 MHz,<br>VGS= 0|-|340|-|pF|
|Coss|Output capacitance||-|40|-|pF|
|Crss|Reverse transfer capacitance||-|20|-|pF|
|Qg|Totalgate charge|VDD= -48 V, ID= -3 A,<br>VGS= -10 V<br>(see_Figure 14: "Gate_<br>_charge test circuit"_)|-|6.4|-|nC|
|Qgs|Gate-source charge||-|1.7|-|nC|
|Qgd|Gate-drain charge||-|1.7|-|nC|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= -48 V, ID= -1.5 A ,<br>RG= 4.7 Ω, VGS= -10 V<br>(see_Figure 13: "Switching_<br>_times test circuit for_<br>_resistive load"_)|-|6.4|-|ns|
|tr|Rise time||-|5.3|-|ns|
|td(off)|Turn-off delaytime||-|14|-|ns|
|tf|Fall time||-|3.7|-|ns|



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**Electrical characteristics** 

**Table 7: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||-3|A|
|ISDM_(1)_|Source-drain current (pulsed)||-||-12|A|
|VSD_(2)_|Forward on voltage|ISD= -3 A, VGS= 0|-||-1.1|V|
|trr|Reverse recoverytime|ISD= -5 A,<br>di/dt = 100 A/µs, VDD= -<br>16 V,Tj= 150 °C<br>(see_Figure 15: "Test_<br>_circuit for inductive load_<br>_switching and diode_<br>_recovery times"_)|-|20||ns|
|Qrr|Reverse recoverycharge||-|17.8||nC|
|IRRM|Reverse recovery current||-|-1.8||A|



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)Pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed . 

**Figure 2: Safe operating area** 

**Figure 3: Thermal impedance** 

**==> picture [142 x 42] intentionally omitted <==**

**----- Start of picture text -----**<br>
CCT<br>* pcb<br>} TT L T<br>Ee cat aeRtttreet 28ro né =K Rie<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics** 

**Figure 5: Transfer characteristics** 

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**Electrical characteristics** 

**Figure 6: Gate charge vs gate-source voltage** 

**Figure 7: Static drain-source on-resistance** 

**==> picture [19 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
(mΩ)<br>**----- End of picture text -----**<br>


**Figure 8: Capacitance variations** 

**==> picture [209 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>(pF)<br>400<br>NSREES AM 15342v1<br>| bee SeeEeniL | Ciss<br>300<br>Poe<br>200<br>Pte<br>100 KCEREEEEEP [EE]<br>RE<br>Coss<br>0 ==SS Crss<br>0 10 20 30 40 50 VDS(V)<br>Figure 10: Normalized gate threshold voltage vs<br>temperature<br>**----- End of picture text -----**<br>


**Figure 9: Normalized V(BR)DSS vs. temperature** 

**Figure 11: Normalized on-resistance vs. temperature** 

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**Electrical characteristics** 

**Figure 12: Source-drain diode forward characteristics** 

**==> picture [166 x 163] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [401 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Switching times test circuit for<br>Figure 14: Gate charge test circuit<br>resistive load<br>**----- End of picture text -----**<br>


**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**==> picture [215 x 125] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

**Figure 16: SOT-223 package outline** 

**==> picture [408 x 386] intentionally omitted <==**

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**Package information** 

||||**Package information**|
|---|---|---|---|
||**Table 8: SOT-223package mechanical data**|||
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|||1.8|
|A1|0.02||0.1|
|B|0.6|0.7|0.85|
|B1|2.9|3|3.15|
|c|0.24|0.26|0.35|
|D|6.3|6.5|6.7|
|e||2.3||
|e1||4.6||
|E|3.3|3.5|3.7|
|H|6.7|7.0|7.3|
|V|||10º|



**Figure 17: SOT-223 recommended footprint (dimensions are in mm)** 

**==> picture [408 x 289] intentionally omitted <==**

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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|31-Oct-2012|1|First release.|
|09-Nov-2012|2|Modified: note 1 in Table 3|
|16-Jan-2013|3|Document statuspromoted frompreliminarydata toproduction data|
|14-Mar-2013|4|Modified: Figure 1, 3, Ciss, Coss, Crss typical values in Table 5|
|07-Oct-2016|5|Updated title, features and description in cover page.<br>Updated silhouette and_Figure 1: "Internal schematic diagram"_.<br>Updated_Figure 16: "SOT-223 package outline"_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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