# Power MOSFET, N Channel, 450 V, 600 mA, 3.2 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2098284/)

**URL**: https://novapart.co/products/STN3N45K3/power-mosfet-n-channel-450-v-600-ma-32-ohm-sot-223
**SKU**: STN3N45K3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2840
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):3.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 450V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 600mA |
| Drain Source On State Resistance | 3.2ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098284/)

## **STN3N45K3** 

N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3™ Power MOSFET in a SOT-223 package 

**Datasheet** - **production data** 

## **Features** 

**==> picture [50 x 54] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>3<br>2<br>1<br>SOT-223<br>**----- End of picture text -----**<br>


|**Order code**|**VDSS**|**RDS(on)**<br>**max**|**ID**|**Pw**|
|---|---|---|---|---|
|STN3N45K3|450 V|< 4Ω|0.6 A|3 W|



- 100% avalanche tested 

- Extremely high dv/dt capability 

- Gate charge minimized 

- Very low intrinsic capacitance 

- Improved diode reverse recovery characteristics 

## **Figure 1. Internal schematic diagram** 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01476v1<br>**----- End of picture text -----**<br>


This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN3N45K3|3N45K3|SOT-223|Tape and reel|



_www.st.com_ 

June 2013 

DocID024888 Rev 1 

1/15 

This is information on a product in full production. 

**Contents** 

**STN3N45K3** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|450|V|
|VGS|Gate- source voltage|± 30|V|
|ID|Drain current (continuous) at Tamb= 25 °C|0.6|A|
|IDM<br>(1)|Drain current (pulsed)|2.4|A|
|PTOT|Total dissipation at Tamb= 25 °C|3|W|
|IAR<br>(2)|Avalanche current, repetitive or not-repetitive|0.6|A|
|EAS<br>(3)|Single pulse avalanche energy<br>(starting Tj= 25°C, ID= IAR, VDD= 50V)|45|mJ|
|dv/dt(4)|Peak diode recovery voltage slope|12|V/ns|
|Vesd(g-s)|G-S ESD (HBM C = 100 pF, R = 1.5 kΩ)|1000|V|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area. 

2. Pulse width limited by Tj max. 

3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 

4. ISD ≤ 0.6 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|Symbol|Parameter|Value|Unit|
|Rthj-a<br>(1)|Thermal resistance junction-ambient|37.8|°C/W|



1. When mounted on FR-4 board of 1 inch[2] , 2oz Cu, t < 30 sec 

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**STN3N45K3** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|450|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 450 V<br>VDS= 450 V, TC=125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on|Static drain-source on<br>resistance|VGS= 10 V, ID= 0.6 A||3.3|4|Ω|



**Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz, VGS= 0|-|164|-|pF|
|Coss|Output capacitance||-|17|-|pF|
|Crss|Reverse transfer<br>capacitance||-|3|-|pF|
|Co(tr)<br>(1)|Equivalent<br>capacitance time<br>related|VDS= 0 to 360 V, VGS= 0|-|13|-|pF|
|Co(er)<br>(2)|Equivalent<br>capacitance energy<br>related||-|18|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|8|-|Ω|
|Qg|Total gate charge|VDD= 360 V, ID= 1.8 A,<br>VGS= 10 V<br>(see_Figure 16_)|-|9.5|-|nC|
|Qgs|Gate-source charge||-|2|-|nC|
|Qgd|Gate-drain charge||-|6|-|nC|



1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

**Table 6. Switching times** 

||**Table**|**6. Switching times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|td(on)|Turn-on delay time|VDD= 225 V, ID= 0.9 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 15_)|-|6.5|-|ns|
|tr|Rise time||-|5.4|-|ns|
|td(off)|Turn-off-delay time||-|17|-|ns|
|tf|Fall time||-|22|-|ns|



**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||0.6|A|
|ISDM (1)|Source-drain current (pulsed)||-||2.4|A|
|VSD (2)|Forward on voltage|ISD= 0.6 A, VGS= 0|-||1.5|V|
|trr|Reverse recovery time|ISD= 1.8 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 20_)|-|175||ns|
|Qrr|Reverse recovery charge||-|550||nC|
|IRRM|Reverse recovery current||-|6||A|
|trr|Reverse recovery time|ISD= 1.8 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 20_)|-|185||ns|
|Qrr|Reverse recovery charge||-|600||nC|
|IRRM|Reverse recovery current||-|6.5||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 

**Table 8. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown<br>voltage|IGS= ± 1 mA, ID=0|30|-|-|V|



The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM10304v1<br>(A)<br>1 1µs<br>10µs<br>0.1 100µs<br>1ms<br>10ms<br>0.01 Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.001<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

## **Figure 3. Thermal impedance** 

**==> picture [168 x 169] intentionally omitted <==**

## **Figure 5. Transfer characteristics** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM09207v1 AM09208v1<br>ID (A) ID<br>VGS=10V (A)<br>VDS=15V<br>3.5<br>2.5<br>3.0<br>7V<br>2.0<br>2.5<br>2.0 1.5<br>6V<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>5V<br>0 0<br>0 5 10 15 20 25 VDS(V) 0 1 2 3 4 5 6 7 8 9 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 6. Gate charge vs gate-source voltage** 

## **Figure 7. Static drain-source on resistance** 

**==> picture [462 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM09209v1 RDS(on) (Ω) AM09210v1<br>(V) VDS<br>VDD=360V 4.2<br>12 350<br>ID=1.8A VGS=10V<br>4.0<br>300<br>10<br>3.8<br>250<br>8 3.6<br>200<br>3.4<br>6<br>150<br>3.2<br>4<br>100<br>3.0<br>2<br>50 2.8<br>0 0 2.6<br>0 2 4 6 8 10 Qg(nC) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM10296v1<br>(pF)<br>Ciss<br>100<br>10<br>Coss<br>Crss<br>1<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage vs temperature** 

## **Figure 9. Output capacitance stored energy** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM10297v1<br>(µJ)<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 100 200 300 400 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [462 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM10298v1 RDS(on) AM10299v1<br>(norm) (norm)<br>ID=1.2A<br>1.10<br>ID=50µA 2.5<br>1.00 2.0<br>1.5<br>0.90<br>1.0<br>0.80<br>0.5<br>0.70 0.0<br>-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)<br>Figure 12. Source-drain diode forward  Figure 13. Normalized BVDSS vs temperature<br>characteristics<br>VSD AM10301v1 BVDSS AM10300v1<br>(V) (norm)<br>TJ=-50°C ID=1mA<br>1.0<br>1.10<br>0.9<br>TJ=25°C<br>0.8 1.05<br>0.7<br>1.00<br>TJ=150°C<br>0.6<br>0.95<br>0.5<br>0.4 0.90<br>0 0.4 0.8 1.2 1.6 ISD(A) -75 -25 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14. Maximum avalanche energy vs starting Tj** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM10302v1<br>EAS (mJ)<br>50 ID=0.6 A<br>V DD =50 V<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 15. Switching times test circuit for resistive load** 

**Figure 16. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 9. SOT-223 mechanical data** 

||**Table 9. SOT-223 mechanical data**|**Table 9. SOT-223 mechanical data**|**Table 9. SOT-223 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Typ.**<br>**Max.**|||
|||**Typ.**|**Max.**|
|A|||1.80|
|A1|0.02||0.1|
|B|0.60|0.70|0.85|
|B1|2.90|3.00|3.15|
|c|0.24|0.26|0.35|
|D|6.30|6.50|6.70|
|e||2.30||
|e1||4.60||
|E|3.30|3.50|3.70|
|H|6.70|7.00|7.30|
|V|||10°|



## **Figure 21. SOT-223 mechanical data drawing** 

**==> picture [405 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
0046067_M<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 10. SOT-223 tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~eeee ee~~|**Tape**<br>~~ee~~<br>~~eeee ee~~|**Tape**<br>~~ee~~<br>~~eeee ee~~|**Tape**<br>~~ee~~<br>~~eeee ee~~|**Reel**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|**Dim.**<br>~~ee~~<br>~~ee~~|**mm**<br>~~ee~~<br>~~eeee ee~~<br>~~re~~|||**Dim.**<br>~~ee~~<br>~~eeeee~~|**mm**<br>~~ee~~<br>~~eee~~||
||**Min.**<br>~~ee~~<br>~~re~~|**Typ.**<br>~~ee ee~~<br>~~re~~|**Max.**<br>~~ee~~||**Min.**<br>~~eee~~<br>~~a~~|**Max.**<br>~~eee~~<br>~~a~~|
|A0<br>~~ee~~<br>~~a~~<br>~~a~~|6.75<br>~~ee ~~<br>~~es~~<br>~~es es~~|6.85<br> ~~ee ee~~<br>~~es~~<br>~~es~~|6.95<br>~~ee~~<br>~~eG~~|A<br>~~ee~~<br>~~eG~~||180<br>|
|B0<br>~~a~~<br>~~ee~~|7.30<br>~~es es~~|7.40<br>~~es~~|7.50<br>~~eG~~|N<br>~~eG~~|60||
|K0<br>~~a~~<br>~~ee~~<br>~~ee~~|1.80<br>~~es es~~|1.90<br>~~es~~|2.00<br>~~eG~~|W1<br>~~eG~~||12.4|
|F<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.40<br>~~ss~~|5.50<br>~~ss~~|5.60|W2||18.4|
|E<br>~~ee~~<br>~~ee~~|1.65<br>~~ss~~|1.75<br>~~ss~~|1.85|W3|11.9|15.4|
|W<br>~~ee ~~<br>~~a~~|11.7<br> ~~ss~~|12<br>~~ss~~|12.3||||
|P2<br>~~a ~~<br>~~es~~|1.90<br> ~~es~~<br>|2<br>~~es~~<br>|2.10|Base quantity pcs||1000|
|P0<br> <br>~~es~~<br>~~ee~~<br>~~ee~~|3.90<br> ~~es~~<br>~~ss~~<br>~~ee~~<br>|4<br>~~es~~<br>~~ss~~<br>~~ee~~<br>|4.10<br>~~ee~~<br>|Bulk quantity pcs<br>~~ee~~<br>||1000|
|P1<br> <br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|7.90<br> ~~es~~<br> ~~ss~~<br>~~ee~~<br>~~ee~~<br>|8<br>~~es~~<br>~~ss~~<br>~~ee~~<br>~~ee~~<br>|8.10<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|||
|T<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.25<br> ~~ss~~<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~|0.30<br>~~ss~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.35<br>~~ee~~<br>~~ee~~<br>~~ee~~||||
|Dφ<br> <br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.50<br> ~~ee ~~<br> ~~ee~~<br>~~**ee**~~|1.55<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|1.60<br> ~~ee~~<br>~~ee~~<br>~~ee~~||||
|D1φ<br> <br>~~ee ~~<br>~~ee~~|1.50<br> ~~ee ~~<br> ~~**ee**~~|1.60<br> ~~ee ~~<br>~~ee~~|1.70<br> ~~ee~~<br>~~ee~~||||



**Figure 22. Tape for SOT-223 (dimensions are in mm)** 

- **Cumulative tolerance of 10 sprocket holes is ±0.20 mm** 

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**Packaging mechanical data** 

**==> picture [240 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. Reel for TO-223 (dimensions are in mm)<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|25-Jun-2013|1|First release. Part number previously included in datasheet<br>DocID17206|



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DocID024888 Rev 1 

15/15 



## Links

- [View this product on Novapart](https://novapart.co/products/STN3N45K3/power-mosfet-n-channel-450-v-600-ma-32-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stn3n45k3/mosfet-n-ch-450v-0-6a-sot-223/dp/2098284)
---

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