# Power MOSFET, N Channel, 100 V, 2 A, 0.26 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:9935460RL/)

**URL**: https://novapart.co/products/STN2NF10/power-mosfet-n-channel-100-v-2-a-026-ohm-sot-223
**SKU**: STN2NF10
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3850
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.26ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9935460RL/)

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## **STN2NF10** N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET™ II Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STN2NF10|100V|< 0.26Ω|2.4A|



## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 

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## **Application** 

- Switching application 

   - DC-DC converters 

## **Internal schematic diagram** 

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## **Order code** 

|**Part number**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN2NF10|N2NF10|SOT-223|Tape & reel|



1/13 

April 2007 

Rev 6 

_www.st.com_ 

**Contents** 

**STN2NF10** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|---|---|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



2/13 

**STN2NF10** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS=0)|100|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at TC= 25°C|2.4|A|
|ID|Drain current (continuous) at TC= 100°C|1.5|A|
|IDM<br>(1)|Drain current (pulsed)|17|A|
||Derating factor|0.026|W/°C|
|PTOT<br>(2)|Total dissipation at TC= 25°C|3.3|W|
|EAS<br>(3)|Single pulse avalanche energy|200|mJ|
|dv/dt(4)|Peak diode recovery voltage slope|30|V/ns|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150|°C|



1. Pulse width limited by safe operating area 

2. This value is rated according to Rthj-amb, t < 10sec 

3. IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C 

4. ISD < 6A, di/dt < 500A/µs, VDD= 80% V(BR)DSS 

**Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-amb(1)|Thermal resistance junction-amb|38|°C/W|
|Rthj-amb(2)|Thermal resistance junction-amb|62.5|°C/W|



1. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec) 

2. When mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec) 

3/13 

**STN2NF10** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 3. On/off states** 

|**Table 3.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250µA, VGS= 0|100|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= Max rating,<br>VDS= Max rating,Tc=125°C<br>VDS= 30V, Tc=125°C|||1<br>10<br>1|µA<br>µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ±20V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2||4|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10V, ID= 1.2A||0.23|0.26|Ω|



## **Table 4. Dynamic** 

|**Table 4.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs|Forward transconductance|VDS=15V, ID=1.2A||2.5||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25V, f=1MHz, VGS=0||280<br>45<br>20||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=80V, ID= 6A<br>VGS=10V<br>_(see Figure 15)_||10<br>2.5<br>4|14|nC<br>nC<br>nC|



4/13 

**STN2NF10** 

**Electrical characteristics** 

## **Table 5. Switching times** 

|**Table 5.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD=50V, ID= 2.4A<br>VGS=10V, RG=4.7Ω<br>_(see Figure 14)_||6<br>10||ns<br>ns|
|td(off)<br>tf|Turn-off delay time<br>Fall time|VDD=50V, ID= 2.4A<br>VGS=10V, RG=4.7Ω<br>_(see Figure 14)_||20<br>3||ns<br>ns|



## **Table 6. Source drain diode** 

|**Table 6.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||||2.4<br>17|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 2.4A, VGS=0|||1.2|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 6A, VDD=10V<br>di/dt=100A/µs,Tj=150°C<br>_(see Figure 19)_||70<br>175<br>5||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 

5/13 

**STN2NF10** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Safe operating area** 

**Figure 2. Thermal impedance** 

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**Figure 3. Output characteristics** 

## **Figure 4. Transfer characteristics** 

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**Figure 5. Transconductance** 

**Figure 6. Static drain-source on resistance** 

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6/13 

**STN2NF10** 

**Electrical characteristics** 

**Figure 7. Gate charge vs. gate-source voltage** 

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## **Figure 8. Capacitance variations** 

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**Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs. vs. temperature temperature** 

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**Figure 11. Source-drain diode forward characteristics** 

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**Figure 12. Normalized BVDSS vs. temperature** 

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7/13 

**STN2NF10** 

**Electrical characteristics** 

## **Figure 13. Max drain current vs. temperature** 

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8/13 

**STN2NF10** 

**Test circuit** 

## **3 Test circuit** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

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**Figure 16. Test circuit for inductive load switching and diode recovery times** 

**Figure 17. Unclamped inductive load test circuit** 

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**Figure 18. Unclamped inductive waveform** 

**Figure 19. Switching time waveform** 

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9/13 

**STN2NF10** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

10/13 

**STN2NF10** 

**Package mechanical data** 

## **SOT-223 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|||1.80|||0.071|
|B|0.60|0.70|0.80|0.024|0.027|0.031|
|B1|2.90|3.00|3.10|0.114|0.118|0.122|
|c|0.24|0.26|0.32|0.009|0.010|0.013|
|D|6.30|6.50|6.70|0.248|0.256|0.264|
|e||2.30|||0.090||
|e1||4.60|||0.181||
|E|3.30|3.50|3.70|0.130|0.138|0.146|
|H|6.70|7.00|7.30|0.264|0.276|0.287|
|V|||10o|||10o|
|A1||0.02|||||



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11/13 

**STN2NF10** 

**Revision history** 

## **5 Revision history** 

## **Table 7. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|14-Sep-2006|4|The document has been reformatted|
|29-Mar-2007|5|_Figure 1_has been updated|
|04-Apr-2007|6|New test condition for IDSSon_Table 3_|



12/13 

**STN2NF10** 

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13/13 



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