# Power MOSFET, N Channel, 600 V, 300 mA, 15 ohm, SOT-223, Surface Mount
**URL**: https://novapart.co/products/STN1NK60Z/power-mosfet-n-channel-600-v-300-ma-15-ohm-sot-223
**SKU**: STN1NK60Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2410
**Stock**: 200+
**Lead Time**: 106 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipati
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 300mA |
| Drain Source On State Resistance | 15ohm |
| Gate Source Threshold Voltage Max | 3.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1653678RL/)
Zener-protected
# **STN1NK60Z, STQ1NK60ZR**
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™ Power MOSFETs in SOT-223 and TO-92 packages
**Datasheet** - **production data**
## **Features**
**Order codes VDS RDS(on)max ID PTOT** 4 STN1NK60Z 3.3 W 600 V 15 Ω 0.3 A 3 STQ1NK60ZR-AP 3 W 2 1 • 100% avalanche tested **SOT-223 TO-92 (Ammopak)** • Extremely high dv/dt capability • Gate charge minimized • ESD improved capability ~~oS~~ •
## **Figure 1. Internal schematic diagram**
**==> picture [173 x 158] intentionally omitted <==**
**----- Start of picture text -----**
D(2,4)
G(1)
S(3)
AM01476v1
**----- End of picture text -----**
## **Applications**
- Switching applications
## **Description**
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
**Table 1. Device summary**
|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STN1NK60Z|1NK60Z|SOT-223|Tape and reel|
|STQ1NK60ZR-AP|1NK60ZR|TO-92|Ammopak|
July 2014
DocID9509 Rev 14
1/18
This is information on a product in full production.
_www.st.com_
**Contents**
**STN1NK60Z, STQ1NK60ZR**
|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1
SOT-223, STN1NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2
TO-92 ammopack, STQ1NK60ZR-AP . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
|**6**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|
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**STN1NK60Z, STQ1NK60ZR**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2. Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**SOT-223**|**TO-92**||
|VDS|Drain-source voltage|600||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25 °C|0.3||A|
|ID|Drain current (continuous) at TC=100 °C|0.189||A|
|IDM
(1)|Drain current (pulsed)|1.2||A|
|PTOT|Total dissipation at TC= 25 °C|3.3|3|W|
||Derating factor|0.026|0.024|W/°C|
|ESD|Human body model
C=100 pF, R=1.5 kΩ|800||V|
|dv/dt(2)|Peak diode recovery voltage slope|4.5||V/ns|
|TJ|Operating junction temperature|- 55 to 150||°C|
|Tstg|Storage temperature|||°C|
1. Pulse width limited by safe operating area
2. ISD ≤ 0.3 A, di/dt ≤ 200 A/µs, VDD = 80%V(BR)DSS
**Table 3. Thermal resistance**
|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**SOT-223**|**TO-92**||
|Rthj-amb|Thermal resistance junction-ambient max|38(1)|120|°C/W|
|Rthj-lead|Thermal resistance junction-lead max||40|°C/W|
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
**Table 4. Avalanche data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive
(pulse width limited by Tj max)|0.3|A|
|EAS|Single pulse avalanche energy
(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|60|mJ|
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**STN1NK60Z, STQ1NK60ZR**
**Electrical characteristics**
## **2 Electrical characteristics**
(TCASE = 25 °C unless otherwise specified)
**Table 5. On/off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0, VDS=600 V|||1|µA|
|||VGS= 0, VDS=600 V,
TC= 125 °C|||50|µA|
|IGSS|Gate body leakage current|VDS= 0, VGS= ± 20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 50 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source
on- resistance|VGS= 10 V, ID= 0.4 A||13|15|Ω|
**Table 6. Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs
(1)|Forward transconductance|VDS=15 V, ID= 0.4 A|-|0.5||S|
|Ciss|Input capacitance|VGS= 0, VDS= 25 V,
f=1 MHz|-|94||pF|
|Coss|Output capacitance||-|17.6||pF|
|Crss|Reverse transfer
capacitance||-|2.8||pF|
|Coss eq
(2)
.|Equivalent output
capacitance|VGS= 0, VDS= 0 to 480 V|-|11||pF|
|Qg|Total gate charge|VDD=480 V, ID= 0.8 A
VGS=10 V
_(see Figure 19)_|-|4.9|6.9|nC|
|Qgs|Gate-source charge||-|1||nC|
|Qgd|Gate-drain charge||-|2.7||nC|
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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**Electrical characteristics**
**Table 7. Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 0.4 A,
RG= 4.7Ω,VGS= 10 V
_(see Figure 18)_|-|5.5|-|ns|
|tr|Rise time||-|5|-|ns|
|td(off)|Turn-off delay time||-|13|-|ns|
|tf|Fall time||-|28|-|ns|
**Table 8. Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||0.8|A|
|ISDM
(1)|Source-drain current (pulsed)||-||2.4|A|
|VSD
(2)|Forward on voltage|VGS=0, ISD= 0.8 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 0.8 A,
di/dt = 100 A/µs,
VDD= 20 V|-|135||ns|
|Qrr|Reverse recovery charge||-|216||nC|
|IRRM|Reverse recovery current||-|3.2||A|
|trr|Reverse recovery time|ISD= 0.8 A,
di/dt = 100 A/µs,
VDD= 20V, Tj = 150 °C|-|140||ns|
|Qrr|Reverse recovery charge||-|224||nC|
|IRRM|Reverse recovery current||-|3.2||A|
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
**Table 9. Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID=0|30|-|-|V|
The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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**STN1NK60Z, STQ1NK60ZR**
**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2. Safe operating area for SOT-223**
**==> picture [154 x 154] intentionally omitted <==**
## **Figure 3. Thermal impedance for SOT-223**
**==> picture [207 x 155] intentionally omitted <==**
**----- Start of picture text -----**
SOT-223
K
δ=0.5
0.2
0.1
10-1 0.05
0.02
0.01 t < 30s
Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=62.5°C/W
1010-2 -3Single pulse10-2 10-1 100 101 102 tp [(s)]
**----- End of picture text -----**
**Figure 4. Safe operating area for TO-92**
**==> picture [155 x 153] intentionally omitted <==**
**Figure 5. Thermal impedance for TO-92**
**==> picture [205 x 153] intentionally omitted <==**
**Figure 6. Output characteristics**
**==> picture [155 x 152] intentionally omitted <==**
**Figure 7. Transfer characteristics**
**==> picture [155 x 154] intentionally omitted <==**
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**Electrical characteristics**
**Figure 8. Transconductance**
**==> picture [155 x 149] intentionally omitted <==**
**Figure 10. Gate charge vs gate-source voltage**
**==> picture [164 x 148] intentionally omitted <==**
**Figure 12. Normalized gate threshold voltage vs temperature**
**==> picture [164 x 150] intentionally omitted <==**
**Figure 9. Static drain-source on-resistance**
**==> picture [155 x 147] intentionally omitted <==**
**Figure 11. Capacitance variations**
**==> picture [155 x 149] intentionally omitted <==**
**Figure 13. Normalized on-resistance vs temperature**
**==> picture [164 x 149] intentionally omitted <==**
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**Electrical characteristics**
**Figure 14. Source-drain diode forward characteristics**
**==> picture [164 x 151] intentionally omitted <==**
**Figure 16. Maximum avalanche energy vs temperature**
**==> picture [155 x 153] intentionally omitted <==**
**Figure 15. Normalized VBR(DSS) vs temperature**
**==> picture [173 x 154] intentionally omitted <==**
**----- Start of picture text -----**
BR(DSS)
**----- End of picture text -----**
**Figure 17. Max Id current vs Tc**
**==> picture [173 x 157] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**Figure 18. Switching times test circuit for resistive load**
**Figure 19. Gate charge test circuit**
**==> picture [462 x 162] intentionally omitted <==**
**----- Start of picture text -----**
VDD
12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS
2200
RG D.U.T. μF 2.7kΩ VG
PW
47kΩ
1kΩ
PW
AM01468v1 AM01469v1
**----- End of picture text -----**
**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times**
**==> picture [462 x 346] intentionally omitted <==**
**----- Start of picture text -----**
L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
S B 3.3 1000 μF μF VDD
25 Ω B B D μF μF VDD ID
G
RG S
Vi D.U.T.
Pw
AM01470v1 AM01471v1
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
V(BR)DSS ton toff
VD tdon tr tdoff tf
90% 90%
IDM
10%
ID 0 10% VDS
VDD VDD 90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
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**Package mechanical data**
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark.
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**Package mechanical data**
## **Figure 24. SOT-223 mechanical data drawing**
0046067_N
**Table 10. SOT-223 mechanical data**
||**Table 10. SOT-223 mechanical data**|**Table 10. SOT-223 mechanical data**|**Table 10. SOT-223 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|||1.80|
|A1|0.02||0.10|
|B|0.60|0.70|0.85|
|B1|2.9|3.0|3.15|
|c|0.24|0.26|0.35|
|D|6.30|6.50|6.70|
|e||2.30|6.70|
|e1||4.60||
|E|3.30|3.50|3.70|
|H|6.70|7.0|7.30|
|V|||10°|
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**Package mechanical data**
**==> picture [232 x 11] intentionally omitted <==**
**----- Start of picture text -----**
Figure 25. SOT-223 footprint (dimensions in mm)
**----- End of picture text -----**
**==> picture [405 x 276] intentionally omitted <==**
**----- Start of picture text -----**
0046067_N_footprint
**----- End of picture text -----**
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**Package mechanical data**
- **4.1 SOT-223, STN1NK60Z**
## **4.2 TO-92 ammopack, STQ1NK60ZR-AP**
## **Figure 26. TO-92 ammopack mechanical data drawing**
**==> picture [405 x 259] intentionally omitted <==**
**----- Start of picture text -----**
T
A1 T2 T1
H1 delta H
H
H3
H0
d
L W2
l1
W0 W
W1
F1 F2
F3
D0
P2 t
P0
0050910S_Rev_U
**----- End of picture text -----**
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**Package mechanical data**
**Table 11. TO-92 ammopack mechanical data**
|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A1|||4.80|
|T|||3.80|
|T1|||1.60|
|T2|||2.30|
|d|0.45|0.47|0.48|
|P0|12.50|12.70|12.90|
|P2|5.65|6.35|7.05|
|F1, F2|2.40|2.50|2.94|
|F3|4.98|5.08|5.48|
|delta H|-2.00||2.00|
|W|17.50|18.00|19.00|
|W0|5.5|6.00|6.5|
|W1|8.50|9.00|9.25|
|W2|||0.50|
|H||18.50|21|
|H3|0.5|1|2|
|H0|15.50|16.00|18.8|
|H1||25.0|27.0|
|D0|3.80|4.00|4.20|
|t|||0.90|
|L|||11.00|
|l1|3.00|||
|delta P|-1.00||1.00|
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**Packaging mechanical data**
## **5 Packaging mechanical data**
**Figure 27. Tape for SOT-223 (dimensions are in mm)**
- **Cumulative tolerance of 10 sprocket holes is ±0.20 mm**
**Figure 28. Reel for TO-223 (dimensions are in mm)**
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**Packaging mechanical data**
**Table 12. SOT-223 tape and reel mechanical data**
||**Tape**|**Tape**|||**Reel**|**Reel**|
|---|---|---|---|---|---|---|
|**Dim.**|**mm**|||**Dim.**|**mm**||
||**Min.**|**Typ.**|**Max.**||**Min.**|**Max.**|
|A0|6.75|6.85|6.95|A||180|
|B0|7.30|7.40|7.50|N|60||
|K0|1.80|1.90|2.00|W1||12.4|
|F|5.40|5.50|5.60|W2||18.4|
|E|1.65|1.75|1.85|W3|11.9|15.4|
|W|11.7|12|12.3||||
|P2|1.90|2|2.10|Base quantity pcs||1000|
|P0|3.90|4|4.10|Bulk quantity pcs||1000|
|P1|7.90|8|8.10||||
|T|0.25|0.30|0.35||||
|Dφ|1.50|1.55|1.60||||
|D1φ|1.50|1.60|1.70||||
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**Revision history**
## **6 Revision history**
**Table 13. Revision history**
|||**Table 13. Revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|19-Mar-2003|3|First electronic version|
|15-May-2003|4|Removed DPAK|
|09-Jun-2003|5|Final datasheet|
|17-Nov-2004|6|Inserted SOT-223|
|15-Feb-2005|7|Modified_Figure 4._|
|07-Sep-2005|8|Inserted ecopack indication|
|22-Feb-2006|9|The document has been reformatted|
|01-Jun-2007|10|Order code table on first page has been updated|
|19-Jul-2007|11|_Table 1: Device summary_has been updated|
|05-Jan-2011|12|Corrected_Figure 2: Safe operating area for SOT-223_and_Figure 3:_
_Thermal impedance for SOT-223_|
|05-Jun-2014|13|– Updated title.
– Updated derating factor in_Table 2: Absolute maximum ratings_.
– Updated_Section 4: Package mechanical data_.
– Minor text changes.|
|04-Jul-2014|14|– Updated_Section 3: Test circuits_.|
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## **www.st.com**
18/18
DocID9509 Rev 14
## Links
- [View this product on Novapart](https://novapart.co/products/STN1NK60Z/power-mosfet-n-channel-600-v-300-ma-15-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stn1nk60z/transistor-mosfet/dp/1653678RL)
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