# Power MOSFET, P Channel, 30 V, 9 A, 0.012 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3132760/)

**URL**: https://novapart.co/products/STL9P3LLH6/power-mosfet-p-channel-30-v-9-a-0012-ohm-powerflat
**SKU**: STL9P3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3510
**Stock**: 1000+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET H6 |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132760/)

**STL9P3LLH6** 

Datasheet 

P-channel -30 V, 12 mΩ typ., -9 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package 

## **Features** 

|**Order code**|**VDS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STL9P3LLH6|-30 V|15 mΩ|-9 A|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

## **Applications** 

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D(5, 6, 7, 8)<br>G(4)<br>S(1, 2, 3)<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

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|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STL9P3LLH6|
|**Marking**|9P3L|
|**Package**|PowerFLAT™ 3.3x3.3|
|**Packing**|Tape and reel|



**DS10145** - **Rev 3** - **February 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STL9P3LLH6 Electrical ratings** 

**1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|-30|V|
|VGS|Gate-source voltage|± 20|V|
|ID|Drain current (continuous) at Tpcb= 25 °C|-9|A|
|ID|Drain current (continuous) at Tpcb= 100 °C|-5.9|A|
|IDM(1)|Drain current (pulsed)|-36|A|
|PTOT|Total dissipation at Tpcb=25 °C|3|W|
|Tstg|Storage temperature range|- 55 to 150|°C|
|Tj|Operating junction temperature range|||



_1. Pulse width limited by safe operating area._ 

**Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|2.5|°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb|42|°C/W|



_1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s_ 

**DS10145** - **Rev 3** 

**page 2/15** 

**STL9P3LLH6 Electrical characteristics** 

**2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 3. On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= -1 mA|-30|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V, VDS= -30 V|||-1|µA|
|||VGS= 0 V, VDS= -30 V, TC= 125 °C<br>(1)|||-10|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V, VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= -250 µA|-1|||V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= -10 V, ID=-4.5 A||12|15|mΩ|
|||VGS= -4.5 V, ID= -4.5 A||18|22.5|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= -25 V, f = 1 MHz,<br>VGS= 0 V|-|2615|-|pF|
|Coss|Output capacitance||-|340|-|pF|
|Crss|Reverse transfer capacitance||-|235|-|pF|
|Qg|Total gate charge|VDD= -15 V, ID= -9 A,<br>VGS= -4.5 to 0 V<br>(seeFigure 13. Gate charge test<br>circuit)|-|24|-|nC|
|Qgs|Gate-source charge||-|9|-|nC|
|Qgd|Gate-drain charge||-|8|-|nC|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= -15 V, ID= -4.5 A,<br>RG= 4.7 Ω, VGS= -10 V<br>(seeFigure 12. Switching times test<br>circuit for resistive load)|-|13.2|-|ns|
|tr|Rise time||-|93|-|ns|
|td(off)|Turn-off delay time||-|50|-|ns|
|tf|Fall time||-|18|-|ns|



**Table 6. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD (1)|Forward on voltage|ISD= -9 A, VGS= 0 V|-||-1.1|V|



**DS10145** - **Rev 3** 

**page 3/15** 

**STL9P3LLH6 Electrical characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recovery time|ISD= -9 A, di/dt = 100 A/µs<br>VDD= -24 V, Tj=150 °C<br>(seeFigure 14. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|20||ns|
|Qrr|Reverse recovery charge||-|16||nC|
|IRRM|Reverse recovery current||-|-1.6||A|



_1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%_ 

**DS10145** - **Rev 3** 

**page 4/15** 

**STL9P3LLH6 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

_Note: Note: For the P-channel Power MOSFET, current and voltage polarities are reversed._ 

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**----- Start of picture text -----**<br>
Figure 1. Safe operating area Figure 2. Thermal impedance<br>I D GIPG0903166B3P9SOA K  GIPG0903166B3P9ZTH<br>(A)<br>10  [1] 10  [-1] 0.05<br>tp =10 ms<br>10  [0] tp =10 ms 10  [-2]<br>Rth-pcb<br>T j ≤150 °C tp =1 s<br>T pcb  = 25°C<br>10  [-1] single pulse 10  [-3]<br>10  [-1] 10  [0] 10  [1] V DS (V) 10  [-4] 10  [-3] 10  [-2] 10  [-1] 10  [0] t p (s)<br>Operation in this area is<br>limited by R DS(on)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3. Output characteristics Figure 4. Transfer characteristics<br>I D GIPG180320161003OCH I D GIPG180320161101TCH<br>(A) V GS = 7,8,9,10 V (A)<br>140 V GS = 6 V 140<br>V DS =5 V<br>120 V GS = 5 V 120<br>100 100<br>80 V GS = 4 V 80<br>60 60<br>40 40<br>V GS = 3 V<br>20 20<br>0 0<br>0 1 2 3 4 V DS (V) 0 1 2 3 4 5 6 7 V GS (V)<br>**----- End of picture text -----**<br>


**DS10145** - **Rev 3** 

**page 5/15** 

**STL9P3LLH6 Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance<br>V GS GIPG1803166B3PDQVG R DS(on) GIPG0903166B3P9RID<br>(V) (mΩ)<br>10 14<br>V DD = 15 V V GS =10 V<br>I D = 9 A<br>8 13<br>6 12<br>4 11<br>2 10<br>0 9<br>0 10 20 30 40 50 Q g (nC) 10 15 20 25 30 35 40 I D (A)<br>**----- End of picture text -----**<br>


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Figure 7. Capacitance variations Figure 8. Normalized gate threshold voltage vs<br>temperature<br>C  GIPG0903166B3PDCVR<br>(pF) V GS(th) GIPG0903166B3PDVTH<br>(norm.)<br>1.1<br>C ISS I D = 250 µA<br>1.0<br>10  [3]<br>f = 1 MHz 0.9<br>C OSS 0.8<br>C RSS<br>0.7<br>10  [2]<br>0 5 10 15 20 25 30 V DS (V) 0.6<br>-75 -25 25 75 125 T j (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature<br>R DS(on) GIPG1003166B3PDRON V (BR)DSS GIPG0903166B3PDBDV<br>(norm.) (norm.)<br>1.5 1.08<br>V GS = 10 V I D = 1 mA<br>1.25 1.04<br>1.00 1.00<br>0.75 0.96<br>0.5 0.92<br>-50 -25 0 25 50 75 100 125 150 I D (A) -75 -25 25 75 125 T j (°C)<br>**----- End of picture text -----**<br>


**DS10145** - **Rev 3** 

**page 6/15** 

**STL9P3LLH6 Electrical characteristics (curves)** 

**==> picture [229 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Source-drain diode forward characteristics<br>V SD GIPG0903166B3PDSDF<br>(V)<br>1.0<br>T j = -55 °C<br>0.9<br>T j = 25 °C<br>0.8<br>0.7<br>T j = 175 °C<br>0.6<br>0.5<br>0.4<br>2 4 6 8 10 12 I SD (A)<br>**----- End of picture text -----**<br>


**DS10145** - **Rev 3** 

**page 7/15** 

**STL9P3LLH6 Test circuits** 

**3 Test circuits** 

**Figure 12. Switching times test circuit for resistive load** 

**Figure 13. Gate charge test circuit** 

**==> picture [196 x 117] intentionally omitted <==**

**==> picture [195 x 97] intentionally omitted <==**

**Figure 14. Test circuit for inductive load switching and diode recovery times** 

**==> picture [233 x 135] intentionally omitted <==**

**DS10145** - **Rev 3** 

**page 8/15** 

**STL9P3LLH6 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS10145** - **Rev 3** 

**page 9/15** 

**STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information** 

## **4.1 PowerFLAT™ 3.3x3.3 package information** 

**Figure 15. PowerFLAT™ 3.3x3.3 package outline** 

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**----- Start of picture text -----**<br>
BOTTOM VIEW<br>SIDE VIEW<br>TOP VIEW<br>8465286_2<br>**----- End of picture text -----**<br>


**DS10145** - **Rev 3** 

**page 10/15** 

**STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information** 

**Table 7. PowerFLAT™ 3.3x3.3 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|0.70|0.80|0.90|
|b|0.25|0.30|0.39|
|c|0.14|0.15|0.20|
|D|3.10|3.30|3.50|
|D1|3.05|3.15|3.25|
|D2|2.15|2.25|2.35|
|e|0.55|0.65|0.75|
|E|3.10|3.30|3.50|
|E1|2.90|3.00|3.10|
|E2|1.60|1.70|1.80|
|H|0.25|0.40|0.55|
|K|0.65|0.75|0.85|
|L|0.30|0.45|0.60|
|L1|0.05|0.15|0.25|
|L2|||0.15|
|θ|8°|10°|12°|



**DS10145** - **Rev 3** 

**page 11/15** 

**STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information** 

**Figure 16. PowerFLAT™ 3.3x3.3 recommended footprint (dimensions are in mm)** 

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**----- Start of picture text -----**<br>
8465286_footprint<br>**----- End of picture text -----**<br>


**DS10145** - **Rev 3** 

**page 12/15** 

**STL9P3LLH6** 

## **Revision history** 

## **Table 8. Document revision history** 

|**Date**|**Revision **|**Changes**|
|---|---|---|
|23-Jan-2014|1|First release.|
|07-Mar-2016|2|Modified: title and RDS(on)max value<br>Modified:_Table 2: "Absolute maximum ratings"_,_Table 4: "On /off states"_,_Table 5: "Dynamic"_,_Table_<br>_6: "Switching times"_and_Table 7: "Source drain diode"_<br>Minor text changes.|
|20-Feb-2018|3|UpdatedFigure 1. Safe operating areaandFigure 2. Thermal impedance.<br>Removed maturity status indication from cover page. The document status is production data.|



**DS10145** - **Rev 3** 

**page 13/15** 

**STL9P3LLH6 Contents** 

## **Contents** 

|**1**|**Electrical ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>PowerFLAT™ 3.3x3.3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13**||
|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**||
|**Disclaimer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15**||



**DS10145** - **Rev 3** 

**page 14/15** 

**STL9P3LLH6** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2018 STMicroelectronics – All rights reserved 

**DS10145** - **Rev 3** 

**page 15/15** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl9p3llh6/mosfet-p-ch-30v-9a-150deg-c-3w/dp/3132760)
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