# Power MOSFET, N Channel, 100 V, 70 A, 8000 µohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3132759/)

**URL**: https://novapart.co/products/STL92N10F7AG/power-mosfet-n-channel-100-v-70-a-8000-ohm
**SKU**: STL92N10F7AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5830
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | AEC-Q101 |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 70A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132759/)

## **STL92N10F7AG** 

Automotive-grade N-channel 100 V, 0.008 Ω typ.,16 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package **Datasheet** - **production data Features R Order code VDS DS(on) ID PTOT max** STL92N10F7AG 100 V 0.0095 Ω 16 A 5 W 1 • Designed for automotive applications and 2 3 AEC-Q101 qualified 4 • Among the lowest RDS(on) on the market **PowerFLAT** ™ **5x6** • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ~~a~~ • Wettable flank package **Figure 1. Internal schematic diagram Applications** D(5, 6, 7, 8) 8 7 6 5 • Switching applications **Description** This N-channel Power MOSFET utilizes G(4) STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more 1 2 3 4 efficient switching. ~~tu~~ Top View S(1, 2, 3) AM15540v2 

**Table 1. Device summary** 

**Order code Marking Package Packaging** STL92N10F7AG 92N10F7 PowerFLAT[TM] 5x6 Tape and reel ~~ee~~ 

October 2015 

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This is information on a product in full production. 

**Contents** 

**STL92N10F7AG** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>PowerFLAT™ 5x6 WF type R package information . . . . . . . . . . . . . . . . . 10|
||4.2<br>PowerFLAT™ 5x6 packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

||**Table 2. Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|100|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|70|A|
|ID<br>(1)|Drain current (continuous) at TC= 100 °C|50|A|
|ID<br>(2)|Drain current (continuous) at Tpcb= 25 °C|16|A|
|ID<br>(2)|Drain current (continuous) at Tpcb= 100 °C|11|A|
|IDM<br>(2)(3)|Drain current (pulsed)|64|A|
|PTOT<br>(1)|Total dissipation at TC= 25 °C|100|W|
|PTOT<br>(2)|Total dissipation at Tpcb= 25 °C|5|W|
|Tstg|Storage temperature|-55 to 175 °C|°C|
|Tj|Operating junction temperature|||



1. This value is rated according to Rthj-c 

2. This value is rated according to Rthj-pcb 

3. Pulse width limited by safe operating area. 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|31|°C/W|
|Rthj-case|Thermal resistance junction-case max|1.5|°C/W|



1. When mounted on FR-4 board of 1 inch[2] , 2 oz Cu. 

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**STL92N10F7AG** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250 µA, VGS= 0|100|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 100 V|||1|µA|
|||VDS= 100 V, TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2.5|3.5|4.5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 8 A||0.008|0.0095|Ω|



## **Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0|-|3100|-|pF|
|Coss|Output capacitance||-|700|-|pF|
|Crss|Reverse transfer<br>capacitance||-|45|-|pF|
|Qg|Total gate charge|VDD= 50 V, ID= 16 A,<br>VGS= 10 V<br>(see_Figure 14_)|-|45|-|nC|
|Qgs|Gate-source charge||-|18|-|nC|
|Qgd|Gate-drain charge||-|13|-|nC|



**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 50 V, ID= 8 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 15_and_Figure 18_)|-|19|-|ns|
|tr|Rise time||-|32|-|ns|
|td(off)|Turn-off delay time||-|36|-|ns|
|tf|Fall time||-|13|-|ns|



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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||16|A|
|ISDM (1)|Source-drain current (pulsed)||-||64|A|
|VSD (2)|Forward on voltage|ISD= 16 A, VGS= 0|-||1.1|V|
|trr|Reverse recovery time|ISD= 16 A, di/dt = 100 A/µs<br>VDD= 80 V, Tj=150 °C<br>(see_Figure 18_)|-|70||ns|
|Qrr|Reverse recovery charge||-|125||nC|
|IRRM|Reverse recovery current||-|3.6||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18087v1<br>(A)<br>10<br>100µs<br>1<br>1ms<br>Tj=175 ° C<br>Tpcb=25°C<br>10ms<br>Single pulse<br>0.1<br>0.1 1 10 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 3. Thermal impedance** 

**==> picture [228 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18088v1<br>K<br>δ=0.5<br>0.2<br>0.1<br>10 [-1]<br>0.05<br>0.02<br>0.01<br>pcb<br>10 [-2] Single pulse<br>10 [-3]<br>10 [-4] 10-3 10 [-2] 10 [-1] 10 [0] 10 [1] tp(s)<br>**----- End of picture text -----**<br>


**==> picture [462 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4. Output characteristics Figure 5. Transfer characteristics<br>AM18089v1 AM18090v1<br>ID(A) ID<br>VGS=10V (A)<br>VDS=9V<br>300 300<br>9V<br>250 250<br>8V<br>200 200<br>7V<br>150 150<br>100 6V 100<br>50 50<br>5V<br>0 0<br>0 2 4 6 8 VDS(V) 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


**==> picture [462 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance<br>VGS AM18091v1 RDS(on) AM18092v1<br>(V) (mΩ)<br>VDD=50V VGS=10V<br>12<br>ID=16A 10.00<br>10<br>8.00<br>8<br>6.00<br>6<br>4.00<br>4<br>2.00<br>2<br>0 0.00<br>0 10 20 30 40 50 Qg(nC) 0 5 10 15 20 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [462 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs<br>temperature<br>C AM18093v1 VGS(th) AM18094v1<br>(pF) (norm)<br>3500 1.2 ID=250µA<br>Ciss<br>3000 1<br>2500<br>0.8<br>2000<br>0.6<br>1500<br>0.4<br>1000<br>0.2<br>500<br>Coss<br>0 Crss 0<br>0 20 40 60 80 VDS(V) -55 -5 45 95 145 TJ(°C)<br>**----- End of picture text -----**<br>


**==> picture [462 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. Normalized on-resistance vs  Figure 11. Normalized V(BR)DSS vs temperature<br>temperature<br>RDS(on) AM18095v1 V(BR)DSS AM18096v1<br>(norm) (norm)<br>ID=16A 1.04 I D =1mA<br>VGS=10V<br>2<br>1.03<br>1.02<br>1.5<br>1.01<br>1<br>1<br>0.99<br>0.98<br>0.5<br>0.97<br>0 0.96<br>-55 -5 45 95 145 TJ(°C) -55 -5 45 95 145 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Source-drain diode forward characteristics** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18097v1<br>VSD (V)<br>TJ=-55°C<br>0.9<br>TJ=25°C<br>0.8<br>0.7<br>TJ=175°C<br>0.6<br>0.5<br>5 10 15 20 25 30 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **4.1 PowerFLAT™ 5x6 WF type R package information** 

## **Figure 19. PowerFLAT™ 5x6 WF type R package outline** 

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**Package mechanical data** 

**Table 8. PowerFLAT™ 5x6 WF type R mechanical data** 

|**Table**|**8. PowerFLAT™ 5x6 WF type R mechanical data**|**8. PowerFLAT™ 5x6 WF type R mechanical data**|**8. PowerFLAT™ 5x6 WF type R mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|D|5.00|5.20|5.40|
|E|6.20|6.40|6.60|
|D2|4.15||4.45|
|E2|3.50||3.70|
|e||1.27||
|L|0.70||0.90|
|L1||0.275||
|K|1.275||1.575|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|



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**Package mechanical data** 

## **Figure 20. PowerFLAT™ 5x6 recommended footprint** 

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**Package mechanical data** 

## **4.2 PowerFLAT™ 5x6 packing information** 

## **Figure 21. PowerFLAT™ 5x6 type WF tape[(a)]** 

**==> picture [405 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
T0.30 0.05 Do1.50 +0.10.0 2.0P2 0.05(I) Po4.0 0.1(II) 1.75E1 0.1<br>Y<br>D1<br>1.50MIN<br>R0.30<br>MAX<br>Y<br>Ko (1.20±0.1) P1(8.00±0.1) Ao(6.70±0.1)<br>SECTION Y-Y<br>(I) Measured from centreline of sprocket hole<br>to centreline of pocket.<br>(II) Cumulative tolerance of 10 sprocket<br>holes is ± 0.20 . Base and bulk quantity 3000 pcs<br>(III) Measured from centreline of sprocket<br>hole to centreline of pocket.<br>8234350_TapeWF_rev_C<br>)<br>F(5.50±0.0.05)(III) (W12.00±0.1<br>Bo (5.35±0.05)<br>**----- End of picture text -----**<br>


## **Figure 22. PowerFLAT™ 5x6 package orientation in carrier tape** 

**==> picture [360 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin 1<br>identification<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters. 

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**Package mechanical data** 

**==> picture [158 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. PowerFLAT™ 5x6 reel<br>**----- End of picture text -----**<br>


**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
R0.60<br>W3<br>PART NO. 11.9/15.4<br>1 .90<br>2.50<br>W2<br>18.4 (max)<br>R25.00<br>   ØN    A<br>4.00 178(±2.0) 330 (+0/-4.0)<br>2.50<br>ESD LOGO<br>W1<br>12.4 (+2/-0)<br>ØA<br>R1.10<br>Ø21.2<br>All dimensions are in millimeters<br>13.00<br>CORE DETAIL<br>8234350_Reel_rev_C<br>128<br>77<br>ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES<br>2.20<br>06PS<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Oct-2014|1|First release.|
|12-Oct-2015|2|Updated:_Section 4.1: PowerFLAT™ 5x6 WF type R package_<br>_information_<br>Datasheet promoted from preliminary data to production data<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stl92n10f7ag/mosfet-aec-q101-n-ch-100v-70a/dp/3132759)
---

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